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1. 发明授权

US06821864B2 Method to achieve increased trench depth, independent of CD as defined by lithography 失效
标题翻译：实现增加沟槽深度的方法，与光刻所定义的CD无关
公开(公告)号：US06821864B2
公开(公告)日：2004-11-23
申请号：US10093789
申请日：2002-03-07
申请人： Kevin K. Chan , Subhash B. Kulkarni , Gangadhara S. Mathad , Rajiv M. Ranade
发明人： Kevin K. Chan , Subhash B. Kulkarni , Gangadhara S. Mathad , Rajiv M. Ranade
IPC分类号： H01L2176
CPC分类号： H01L27/1087 , H01L21/3081 , H01L21/76224 , H01L21/76895
摘要： A method of forming at least one deep trench structure having an increased trench depth is provided. The method includes providing at least one deep trench having sidewalls that extend to a common bottom wall in a surface of a substrate. Each deep trench has initial dimensions that are wider than targeted dimensions for the deep trenches. To reduce the initial dimensions to that of the targeted dimensions, an epitaxial silicon film is formed selectively or non-selectively on at least some portions of the sidewalls using a low-temperature ultra-high vacuum epitaxial silicon growth tehnique.
摘要翻译：提供了形成具有增加的沟槽深度的至少一个深沟槽结构的方法。该方法包括提供至少一个具有延伸到衬底表面中的公共底壁的侧壁的深沟槽。每个深沟槽的初始尺寸比深沟槽的目标尺寸宽。为了将初始尺寸减小到目标尺寸的尺寸，使用低温超高真空外延硅生长技术在侧壁的至少一些部分上选择性地或非选择性地形成外延硅膜。

2. 发明授权

US07144769B2 Method to achieve increased trench depth, independent of CD as defined by lithography 失效
标题翻译：实现增加沟槽深度的方法，与光刻所定义的CD无关
公开(公告)号：US07144769B2
公开(公告)日：2006-12-05
申请号：US10899758
申请日：2004-07-27
申请人： Kevin K. Chan , Subhash B. Kulkarni , Gangadhara S. Mathad , Rajiv M. Ranade
发明人： Kevin K. Chan , Subhash B. Kulkarni , Gangadhara S. Mathad , Rajiv M. Ranade
IPC分类号： H01L21/8242
CPC分类号： H01L27/1087 , H01L21/3081 , H01L21/76224 , H01L21/76895
摘要： A method of forming at least one deep trench structure having an increased trench depth is provided. The method includes providing at least one deep trench having sidewalls that extend to a common bottom wall in a surface of a substrate. Each deep trench has initial dimensions that are wider than targeted dimensions for the deep trenches. To reduce the initial dimensions to that of the targeted dimensions, an epitaxial silicon film is formed selectively or non-selectively on at least some portions of the sidewalls using a low-temperature ultra-high vacuum epitaxial silicon growth tehnique.
摘要翻译：提供了形成具有增加的沟槽深度的至少一个深沟槽结构的方法。该方法包括提供至少一个具有延伸到衬底表面中的公共底壁的侧壁的深沟槽。每个深沟槽的初始尺寸比深沟槽的目标尺寸宽。为了将初始尺寸减小到目标尺寸的尺寸，使用低温超高真空外延硅生长技术在侧壁的至少一些部分上选择性地或非选择性地形成外延硅膜。

3. 发明授权

US06809005B2 Method to fill deep trench structures with void-free polysilicon or silicon 失效
标题翻译：用无孔多晶硅或硅填充深沟槽结构的方法
公开(公告)号：US06809005B2
公开(公告)日：2004-10-26
申请号：US10386880
申请日：2003-03-12
申请人： Rajiv Ranade , Gangadhara S. Mathad , Kevin K. Chan , Subhash B. Kulkarni
发明人： Rajiv Ranade , Gangadhara S. Mathad , Kevin K. Chan , Subhash B. Kulkarni
IPC分类号： H01L2176
CPC分类号： H01L27/1087 , H01L21/0237 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/763 , H01L29/66181
摘要： The present invention provides methods of producing trench structures having substantially void-free filler material therein. The fillers may be grown from a liner material such as polysilicon formed along the sidewalls of the trench. Previously formed voids may be healed by exposing the voids and growing epitaxial silicon.
摘要翻译：本发明提供了在其中制造基本上无空隙填料的沟槽结构的方法。填料可以从诸如沿沟槽的侧壁形成的多晶硅的衬垫材料生长。先前形成的空隙可以通过暴露空隙和生长外延硅来治愈。

4. 发明授权

US08716096B2 Self-aligned emitter-base in advanced BiCMOS technology 失效
标题翻译：先进的BiCMOS技术中的自对准发射极基极
公开(公告)号：US08716096B2
公开(公告)日：2014-05-06
申请号：US13323977
申请日：2011-12-13
申请人： Kevin K. Chan , David L. Harame , Russell T. Herrin , Qizhi Liu
发明人： Kevin K. Chan , David L. Harame , Russell T. Herrin , Qizhi Liu
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L29/737 , H01L21/8249 , H01L27/0623 , H01L29/66242 , H01L29/66272 , H01L29/732 , H01L29/7371
摘要： A self-aligned bipolar transistor and method of fabricating the same are disclosed. In an embodiment, a substrate and an intrinsic base are provided, followed by a first oxide layer, and an extrinsic base over the first oxide layer. A first opening is formed, exposing a portion of a surface of the extrinsic base. Sidewall spacers are formed in the first opening, and a self-aligned oxide mask is selectively formed on the exposed surface of the extrinsic base. The spacers are removed, and using the self-aligned oxide mask, the exposed extrinsic base and the first oxide layer are etched to expose the intrinsic base layer, forming a first and a second slot. A silicon layer stripe is selectively grown on the exposed intrinsic and/or extrinsic base layers in each of the first and second slots, substantially filling the respective slot.
摘要翻译：公开了一种自对准双极晶体管及其制造方法。在一个实施例中，提供衬底和本征基极，随后是第一氧化物层，以及在第一氧化物层上的外部基极。形成第一开口，暴露外部基底的表面的一部分。在第一开口中形成侧壁间隔物，并且在外基的暴露表面上选择性地形成自对准氧化物掩模。去除间隔物，并且使用自对准氧化物掩模，暴露的非本征基底和第一氧化物层被蚀刻以暴露本征基底层，形成第一和第二狭槽。在第一和第二槽中的每一个中的暴露的本征和/或非本征基极层上选择性地生长硅层条纹，基本上填充相应的槽。

5. 发明授权

US08603883B2 Interface control in a bipolar junction transistor 失效
标题翻译：双极结晶体管中的接口控制
公开(公告)号：US08603883B2
公开(公告)日：2013-12-10
申请号：US13297464
申请日：2011-11-16
申请人： Kevin K. Chan , Peng Cheng , Qizhi Liu , Ljubo Radic
发明人： Kevin K. Chan , Peng Cheng , Qizhi Liu , Ljubo Radic
IPC分类号： H01L21/331
CPC分类号： H01L29/73 , G06F17/5045 , H01L29/1004 , H01L29/66272 , H01L29/7371
摘要： Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked while a second portion of an intrinsic base layer is etched. As a consequence of the masking, the second portion of the intrinsic base layer is thinner than the first portion of the intrinsic base layer. An emitter and an extrinsic base layer are formed in respective contacting relationships with the first and second portions of the intrinsic base layer.
摘要翻译：制造双极结型晶体管，双极结型晶体管以及双极结型晶体管的设计结构的方法。本征基底层的第一部分被掩蔽，同时蚀刻本征基底层的第二部分。作为掩蔽的结果，本征基底层的第二部分比本征基底层的第一部分薄。在与本征基层的第一和第二部分分别的接触关系中形成发射极和非本征基层。

6. 发明申请

US20130119442A1 JUNCTION FIELD-EFFECT TRANSISTOR WITH RAISED SOURCE AND DRAIN REGIONS FORMED BY SELECTIVE EPITAXY 有权
标题翻译：具有选择性外延形成的上升源和漏区的连接场效应晶体管
公开(公告)号：US20130119442A1
公开(公告)日：2013-05-16
申请号：US13294731
申请日：2011-11-11
申请人： Kevin K. Chan , John J. Ellis-Monaghan , David L. Harame , Qizhi Liu , John J. Pekarik
发明人： Kevin K. Chan , John J. Ellis-Monaghan , David L. Harame , Qizhi Liu , John J. Pekarik
IPC分类号： H01L21/337 , G06F17/50 , H01L29/808
CPC分类号： H01L29/8086 , G06F17/5045 , H01L27/0623 , H01L29/0817 , H01L29/0826 , H01L29/1004 , H01L29/1058 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/66242 , H01L29/66893 , H01L29/66901 , H01L29/732 , H01L29/7375 , H01L29/808
摘要： Junction field-effect transistors, methods for fabricating junction field-effect transistors, and design structures for a junction field-effect transistor. A source and a drain of the junction field-effect transistor are comprised of a semiconductor material grown by selective epitaxy and in direct contact with a top surface of a semiconductor layer. A gate is formed that is aligned with a channel laterally disposed in the semiconductor layer between the source and the drain. The source, the drain, and the semiconductor layer are each comprised of a second semiconductor material having an opposite conductivity type from a first semiconductor material comprising the gate.
摘要翻译：结型场效应晶体管，用于制造结型场效应晶体管的方法，以及结型场效应晶体管的设计结构。结场效应晶体管的源极和漏极由通过选择性外延生长并与半导体层的顶表面直接接触的半导体材料组成。形成与在源极和漏极之间横向设置在半导体层中的沟道对准的栅极。源极，漏极和半导体层各自包括与包括栅极的第一半导体材料具有相反导电类型的第二半导体材料。

7. 发明申请

US20120289018A1 SOI SiGe-BASE LATERAL BIPOLAR JUNCTION TRANSISTOR 有权
标题翻译： SOI SiGe-BASE横向双极晶体管晶体管
公开(公告)号：US20120289018A1
公开(公告)日：2012-11-15
申请号：US13556372
申请日：2012-07-24
申请人： Tak H. Ning , Kevin K. Chan , Marwan H. Khater
发明人： Tak H. Ning , Kevin K. Chan , Marwan H. Khater
IPC分类号： H01L21/331
CPC分类号： H01L29/7317 , H01L27/0821 , H01L27/1203 , H01L29/0808 , H01L29/165 , H01L29/66265
摘要： A lateral heterojunction bipolar transistor (HBT) is formed on a semiconductor-on-insulator substrate. The HBT includes a base including a doped silicon-germanium alloy base region, an emitter including doped silicon and laterally contacting the base, and a collector including doped silicon and laterally contacting the base. Because the collector current is channeled through the doped silicon-germanium base region, the HBT can accommodate a greater current density than a comparable bipolar transistor employing a silicon channel. The base may also include an upper silicon base region and/or a lower silicon base region. In this case, the collector current is concentrated in the doped silicon-germanium base region, thereby minimizing noise introduced to carrier scattering at the periphery of the base. Further, parasitic capacitance is minimized because the emitter-base junction area is the same as the collector-base junction area.
摘要翻译：在绝缘体上半导体衬底上形成横向异质结双极晶体管（HBT）。 HBT包括基底，其包括掺杂的硅 - 锗合金基底区域，包括掺杂硅并且横向接触基底的发射体，以及包括掺杂硅并且横向接触基底的收集器。因为集电极电流被引导通过掺杂的硅 - 锗基区，所以与使用硅沟道的可比较的双极晶体管相比，HBT可以容纳更大的电流密度。基底还可以包括上硅基区和/或下硅基区。在这种情况下，集电极电流集中在掺杂的硅 - 锗基区域中，从而最小化引入到基极周边的载流子散射的噪声。此外，寄生电容被最小化，因为发射极 - 基极结面积与集电极 - 基极结面积相同。

8. 发明授权

US08198673B2 Asymmetric epitaxy and application thereof 有权
标题翻译：不对称外延及其应用
公开(公告)号：US08198673B2
公开(公告)日：2012-06-12
申请号：US13080702
申请日：2011-04-06
申请人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
发明人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
IPC分类号： H01L21/00
CPC分类号： H01L21/26586 , H01L29/66628 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.
摘要翻译：本发明提供了形成非对称场效应晶体管的方法。该方法包括在半导体衬底的顶部上形成栅极结构，该栅极结构包括一个栅极叠层和邻近该栅极叠层的侧壁的间隔物，并具有与第一侧相对的第一侧和第二侧; 从衬底中的栅极结构的第一侧进行成角度的离子注入，从而形成与第一侧相邻的离子注入区域，其中栅极结构防止成角度的离子注入到达邻近第二侧的衬底门结构; 以及在栅极结构的第一和第二侧在衬底上进行外延生长。结果，在离子注入区域上的外延生长比经历无离子注入的区域慢得多。通过外延生长形成到栅极结构的第二侧的源极区域的高度高于通过外延生长形成于栅极结构的第一侧的漏极区域的高度。还提供了由此形成的半导体结构。

9. 发明授权

US08035141B2 Bi-layer nFET embedded stressor element and integration to enhance drive current 有权
标题翻译：双层nFET嵌入式应力元件并集成增强驱动电流
公开(公告)号：US08035141B2
公开(公告)日：2011-10-11
申请号：US12607104
申请日：2009-10-28
申请人： Kevin K. Chan , Abhishek Dube , Jinghong Li , Viorel Ontalus , Zhengmao Zhu
发明人： Kevin K. Chan , Abhishek Dube , Jinghong Li , Viorel Ontalus , Zhengmao Zhu
IPC分类号： H01L29/76
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/7834 , Y10S257/90 , Y10S257/902 , Y10S257/903
摘要： A semiconductor structure including a bi-layer nFET embedded stressor element is disclosed. The bi-layer nFET embedded stressor element can be integrated into any CMOS process flow. The bi-layer nFET embedded stressor element includes an implant damaged free first layer of a first epitaxy semiconductor material having a lattice constant that is different from a lattice constant of a semiconductor substrate and imparts a tensile strain in a device channel of an nFET gate stack. Typically, and when the semiconductor is composed of silicon, the first layer of the bi-layer nFET embedded stressor element is composed of Si:C. The bi-layer nFET embedded stressor element further includes a second layer of a second epitaxy semiconductor material that has a lower resistance to dopant diffusion than the first epitaxy semiconductor material. Typically, and when the semiconductor is composed of silicon, the second layer of the bi-layer nFET embedded stressor element is composed of silicon. Only the second layer of the bi-layer nFET embedded stressor element includes the implanted source/drain regions.
摘要翻译：公开了一种包括双层nFET嵌入式应力元件的半导体结构。双层nFET嵌入式应力元件可以集成到任何CMOS工艺流程中。双层nFET嵌入式应力元件包括具有不同于半导体衬底的晶格常数的晶格常数的第一外延半导体材料的免费第一层的植入物，并且在nFET栅极堆叠的器件沟道中施加拉伸应变。通常，当半导体由硅组成时，双层nFET嵌入的应力元件的第一层由Si：C组成。双层nFET嵌入式应力元件还包括具有比第一外延半导体材料更低的掺杂剂扩散阻力的第二外延半导体材料层。通常，当半导体由硅组成时，双层nFET嵌入的应力元件的第二层由硅组成。双层nFET嵌入式应力元件的第二层仅包括注入的源极/漏极区域。

10. 发明授权

US07989298B1 Transistor having V-shaped embedded stressor 有权
标题翻译：具有V形嵌入应力的晶体管
公开(公告)号：US07989298B1
公开(公告)日：2011-08-02
申请号：US12692859
申请日：2010-01-25
申请人： Kevin K. Chan , Brian J. Greene , Judson R. Holt , Jeffrey B. Johnson , Thomas S. Kanarsky , Jophy S. Koshy , Kevin McStay , Dae-Gyu Park , Johan W. Weijtmans , Frank B. Yang
发明人： Kevin K. Chan , Brian J. Greene , Judson R. Holt , Jeffrey B. Johnson , Thomas S. Kanarsky , Jophy S. Koshy , Kevin McStay , Dae-Gyu Park , Johan W. Weijtmans , Frank B. Yang
IPC分类号： H01L21/336 , H01L21/76
CPC分类号： H01L29/165 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A semiconductor device and a method of making the device are provided. The method can include forming a gate conductor overlying a major surface of a monocrystalline semiconductor region and forming first spacers on exposed walls of the gate conductor. Using the gate conductor and the first spacers as a mask, at least extension regions are implanted in the semiconductor region and dummy spacers are formed extending outward from the first spacers. Using the dummy spacers as a mask, the semiconductor region is etched to form recesses having at least substantially straight walls extending downward from the major surface to a bottom surface, such that a substantial angle is defined between the bottom surface and the walls. Subsequently, the process is continued by epitaxially growing regions of stressed monocrystalline semiconductor material within the recesses. Then the dummy spacers are removed and the transistor can be completed by forming source/drain regions of the transistor that are at least partially disposed in the stressed semiconductor material regions.
摘要翻译：提供半导体器件和制造该器件的方法。该方法可以包括形成覆盖在单晶半导体区域的主表面上的栅极导体并且在栅极导体的暴露的壁上形成第一间隔物。使用栅极导体和第一间隔物作为掩模，至少延伸区域注入到半导体区域中，并且形成从第一间隔物向外延伸的虚设间隔物。使用虚拟间隔件作为掩模，半导体区域被蚀刻以形成具有从主表面向底表面向下延伸的至少基本上直的壁的凹槽，使得在底表面和壁之间限定大的角度。随后，通过在凹槽内外延生长应力单晶半导体材料的区域来继续该过程。然后去除虚拟间隔物，并且可以通过形成至少部分地设置在受应力的半导体材料区域中的晶体管的源极/漏极区域来完成晶体管。

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