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    • 1. 发明授权
    • Load-lock with external staging area
    • 加载锁定与外部分段区域
    • US06486444B1
    • 2002-11-26
    • US09505901
    • 2000-02-17
    • Kevin FairbairnHoward E. GrunesChristopher LaneKelly A. Colborne
    • Kevin FairbairnHoward E. GrunesChristopher LaneKelly A. Colborne
    • F27B514
    • H01L21/68707H01L21/67196H01L21/67201H01L21/67742H01L21/67745
    • The present invention generally provides a vacuum system having a small-volume load-lock chamber for supporting a substrate set of only two rows of substrates, which provides for quick evacuation and venting of the load-lock chamber to provide a continuous feed load-lock chamber. More particularly, the present invention provides a transfer chamber; one or more processing chambers connected to the transfer chamber; a substrate handling robot disposed in the transfer chamber; and at least one load-lock chamber connected to the transfer chamber, and having one or more substrate support members for supporting one or more stacks of only two substrates per stack. Another aspect of the invention provides a staging, or storage rack associated with or integrated with the load-lock chamber. More particularly, the staging, or storage rack may be located outside the transfer chamber and accessible by a staging robot serving the load-lock chamber. The staging or storage rack may temporarily store processed substrates for cooling of the substrates prior to replacing the substrates within substrate cassettes during idle time of the staging robot. In this way, the substrates may continue to be cooled without interrupting the operation of the load-lock chamber.
    • 本发明通常提供了一种真空系统,其具有小体积的负载锁定室,用于支撑只有两排衬底的衬底组,其提供加载锁定室的快速排空和排气以提供连续的进料装载锁定 房间。 更具体地说,本发明提供一种传送室; 连接到传送室的一个或多个处理室; 设置在所述传送室中的基板处理机器人; 以及连接到传送室的至少一个装载锁定室,并且具有一个或多个衬底支撑构件,用于每堆叠一个或多个仅支撑两个衬底的堆叠。 本发明的另一方面提供了一种与负载锁定室相关联或与其结合的分段或存储架。 更具体地,分段或存储架可以位于传送室外部并且可由用于加载锁定室的分段机器人接近。 在分级机器人的空闲时间期间,在更换基板盒内的基板之前,分段或存放架可临时存储用于冷却基板的经处理的基板。 以这种方式,基板可以继续冷却而不中断加载锁定室的操作。
    • 7. 发明授权
    • Ultra high throughput wafer vacuum processing system
    • 超高产量晶圆真空处理系统
    • US5855681A
    • 1999-01-05
    • US751485
    • 1996-11-18
    • Dan MaydanSasson SomekhAshok SinhaKevin FairbairnChristopher LaneKelly ColborneHari K. PonnekantiW. N.(Nick) Taylor
    • Dan MaydanSasson SomekhAshok SinhaKevin FairbairnChristopher LaneKelly ColborneHari K. PonnekantiW. N.(Nick) Taylor
    • H01L21/00H01L21/205H01L21/677H01L21/687C23C16/00C23F1/02
    • H01L21/67167H01L21/6719H01L21/67196H01L21/67201H01L21/67742H01L21/68707H01L21/68785
    • The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.
    • 本发明通常提供一种盒式到盒式真空处理系统,其同时处理多个晶片,并且结合了单晶片处理室和多个晶片处理的优点,用于高质量晶片处理,高晶圆吞吐量和减小的占地面积。 根据本发明的一个方面,该系统优选地是分级真空系统,其通常包括用于将晶片引入系统中并且还提供后续处理的晶片冷却的负载锁定室,用于容纳晶片处理器的传送室,以及一个或 更多的处理室具有可彼此隔离的两个或更多个处理区域,并且优选地共享公共气体供应源和公共排气泵。 处理区域还优选地包括单独的气体分配组件和RF功率源,以在每个处理区域中在晶片表面上提供均匀的等离子体密度。 处理室被配置为允许在至少两个处理区域中同时执行多个隔离过程,使得可以在室内同时处理至少两个晶片,具有由共用气源提供的高程度的过程控制,共用排气系统 ,独立的气体分配组件,独立的射频电源和独立的温度控制系统。
    • 10. 发明授权
    • Mixed frequency CVD process
    • 混合频率CVD工艺
    • US06358573B1
    • 2002-03-19
    • US09585258
    • 2000-06-02
    • Sébastien RaouxMandar MudholkarWilliam N. TaylorMark FodorJudy HuangDavid SilvettiDavid CheungKevin Fairbairn
    • Sébastien RaouxMandar MudholkarWilliam N. TaylorMark FodorJudy HuangDavid SilvettiDavid CheungKevin Fairbairn
    • H05H124
    • H01J37/32174C23C16/5096C23C16/517H01J37/32082
    • A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
    • 一种衬底处理系统,其包括陶瓷衬底保持器,其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。 气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区,并且还用作第二RF电极。 每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。 混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。 这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜(包括氮化硅膜)的沉积。