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1. 发明授权

US06358573B1 Mixed frequency CVD process 有权
标题翻译：混合频率CVD工艺
公开(公告)号：US06358573B1
公开(公告)日：2002-03-19
申请号：US09585258
申请日：2000-06-02
申请人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
发明人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
IPC分类号： H05H124
CPC分类号： H01J37/32174 , C23C16/5096 , C23C16/517 , H01J37/32082
摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
摘要翻译：一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

2. 发明授权

US07004107B1 Method and apparatus for monitoring and adjusting chamber impedance 失效
标题翻译：监测和调节室阻抗的方法和装置
公开(公告)号：US07004107B1
公开(公告)日：2006-02-28
申请号：US08988246
申请日：1997-12-01
申请人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor
发明人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor
IPC分类号： C23C16/509 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/5096 , C23C16/52 , H01J37/32174
摘要： A substrate processing system that includes a deposition chamber having a reaction zone, a substrate holder that positions a substrate in the reaction zone, a gas distribution system that includes a gas inlet manifold for supplying one or more process gases to said reaction zone, a plasma power source for forming a plasma from a process gas introduced into the reaction zone of the deposition chamber and an impedance monitor that is electrically coupled to the deposition chamber to measure an impedance level of the plasma. In a preferred embodiment, the substrate holder is a first electrode and the gas inlet manifold is a second electrode and RF power is supplied by the plasma power source to either the first or second electrodes to form the plasma. In another preferred embodiment, the processing system further includes a computer processor that is communicatively coupled to the impedance monitor and to other control systems of the processing system so that the computer processor can adjust the impedance of the deposition chamber during the course of an extended wafer run if the impedance drifts outside of a predetermined tolerance range.
摘要翻译：一种衬底处理系统，包括具有反应区的沉积室，将反应区中的衬底定位的衬底保持器，包括用于向所述反应区供应一种或多种工艺气体的进气歧管的气体分配系统，等离子体用于从引入沉积室的反应区域的工艺气体形成等离子体的电源和电耦合到沉积室的阻抗监测器，以测量等离子体的阻抗水平。在优选实施例中，衬底保持器是第一电极，气体入口歧管是第二电极，并且RF功率由等离子体电源提供给第一或第二电极以形成等离子体。在另一个优选实施例中，处理系统还包括计算机处理器，其通信地耦合到阻抗监视器和处理系统的其他控制系统，使得计算机处理器可以在扩展晶片的过程中调整沉积室的阻抗如果阻抗漂移在预定的公差范围之外，则运行。

3. 发明授权

US06354241B1 Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing 有权
标题翻译：加热静电颗粒捕集器，用于原位真空管线清洗的底层处理
公开(公告)号：US06354241B1
公开(公告)日：2002-03-12
申请号：US09354925
申请日：1999-07-15
申请人： Tsutomu Tanaka , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn , Sébastien Raoux , Mark Fodor
发明人： Tsutomu Tanaka , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn , Sébastien Raoux , Mark Fodor
IPC分类号： C23C1600
CPC分类号： C23C16/4412 , B01D49/00 , B01D51/02
摘要： An apparatus and method for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor-processing device. The apparatus includes a vessel chamber having an inlet, an outlet and a fluid conduit between the two that fluidly couples the outlet with the inlet. The fluid conduit includes first and second collection sections. The first collection section includes a first plurality of electrodes aligned parallel to a first plane and the second collection section includes a second plurality of electrodes aligned parallel to a second plane that is substantially perpendicular to the first plane. The electrodes are connected to a voltage differential to form an electrostatic particle collector that traps electrically charged particles and particulate matter flowing through the fluid conduit. Particles are collected on the electrodes within the fluid conduit during substrate processing operations such as CVD deposition steps. Then, during a chamber clean operation, unreacted etchant gases used to clean the substrate processing chamber are exhausted through the foreline and into the apparatus of the present invention where they react with the collected particles and powder to convert the solid material into gaseous matter that can be pumped through the foreline without damaging the vacuum pump or other processing equipment.
摘要翻译：一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置和方法。该装置包括容器腔室，其具有入口，出口和两者之间的流体导管，以使出口与入口流体耦合。流体导管包括第一和第二收集部分。第一收集部分包括平行于第一平面排列的第一多个电极，第二收集部分包括平行于基本上垂直于第一平面的第二平面排列的第二多个电极。电极连接到电压差以形成静电颗粒收集器，其捕获带电粒子和流过流体导管的颗粒物质。在诸如CVD沉积步骤的衬底处理操作期间，将粒子收集在流体导管内的电极上。然后，在室清洁操作期间，用于清洁基板处理室的未反应的蚀刻剂气体通过前级管线排出并进入本发明的装置中，它们与收集的颗粒和粉末反应，将固体材料转化成气态物质，泵送通过前级管线，而不会损坏真空泵或其他加工设备。

4. 发明授权

US06432256B1 Implanatation process for improving ceramic resistance to corrosion 失效
标题翻译：用于提高陶瓷耐腐蚀性的平面化方法
公开(公告)号：US06432256B1
公开(公告)日：2002-08-13
申请号：US09258038
申请日：1999-02-25
申请人： Sébastien Raoux
发明人： Sébastien Raoux
IPC分类号： H05H100
CPC分类号： C04B41/009 , C04B41/5011 , C04B41/85 , C23C14/48 , H01J37/32477 , C04B41/0027 , C04B41/4529 , C04B41/4558 , C04B35/10 , C04B35/581
摘要： A method for improving the corrosion resistance of ceramic parts in a substrate processing chamber by implanting the parts with rare-earth ions. The implanted ceramic parts are highly resistant to corrosive environments that can be formed in semiconductor manufacturing equipment including those found in high temperature applications and high density plasma applications. In a preferred embodiment of the method of the present invention, the ceramic parts are implanted with rare-earth ions using an implantation technique based on a metal vapor vacuum arc (MEVVA™) ion source. The implanted ions are then reacted with fluorine radicals in a highly corrosive environment to form a layer of rare-earth fluoride material, RE:F3, at the surface of the ceramic component. The sublimation temperature of such a RE:F3 layer is much higher than that of layers such as AlF3 that are formed on standard ceramic chamber components in such environments (e.g., up to 1100° C. as compared to 600° C.). At substrate processing temperatures less than the sublimation temperature, the formed RE:F3 layer acts as a passivation layer preventing consumption of the ceramic part during further substrate processing. A substrate processing chamber including at least one component implanted with rare-earth ions is provided. In various specific embodiments, the rare-earth-ion-implanted ceramic component is one or more of a chamber liner, a chamber dome, a cover plate, a gas manifold or faceplate and/or a substrate holder, such as a high temperature heater or an electrostatic chuck.
摘要翻译：一种通过用稀土离子注入部件来改善衬底处理室中的陶瓷部件的耐腐蚀性的方法。植入的陶瓷部件具有高度耐腐蚀性的环境，可以在半导体制造设备中形成，包括在高温应用和高密度等离子体应用中发现的腐蚀环境。在本发明方法的优选实施例中，使用基于金属蒸气真空电弧（MEVVA TM）离子源的注入技术，将陶瓷部件注入稀土离子。然后将注入的离子与高度腐蚀性环境中的氟自由基反应，在陶瓷组分的表面形成一层稀土氟化物材料RE：F3。这样的RE:F3层的升华温度远远高于在这种环境中（例如，与600℃相比高达1100℃）在标准陶瓷室组分上形成的诸如AlF 3的层的升华温度。在低于升华温度的基板处理温度下，所形成的RE:F3层起钝化层的作用，从而防止在进一步的基板处理期间消耗陶瓷部件。提供了包括至少一种注入稀土离子的成分的衬底处理室。在各种具体实施方案中，稀土离子注入的陶瓷组分是腔室衬垫，腔室顶盖，盖板，气体歧管或面板和/或衬底保持器中的一种或多种，例如高温加热器或静电卡盘。

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