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1. 发明授权

US5855681A Ultra high throughput wafer vacuum processing system 失效
标题翻译：超高产量晶圆真空处理系统
公开(公告)号：US5855681A
公开(公告)日：1999-01-05
申请号：US751485
申请日：1996-11-18
申请人： Dan Maydan , Sasson Somekh , Ashok Sinha , Kevin Fairbairn , Christopher Lane , Kelly Colborne , Hari K. Ponnekanti , W. N.(Nick) Taylor
发明人： Dan Maydan , Sasson Somekh , Ashok Sinha , Kevin Fairbairn , Christopher Lane , Kelly Colborne , Hari K. Ponnekanti , W. N.(Nick) Taylor
IPC分类号： H01L21/00 , H01L21/205 , H01L21/677 , H01L21/687 , C23C16/00 , C23F1/02
CPC分类号： H01L21/67167 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67742 , H01L21/68707 , H01L21/68785
摘要： The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.
摘要翻译：本发明通常提供一种盒式到盒式真空处理系统，其同时处理多个晶片，并且结合了单晶片处理室和多个晶片处理的优点，用于高质量晶片处理，高晶圆吞吐量和减小的占地面积。根据本发明的一个方面，该系统优选地是分级真空系统，其通常包括用于将晶片引入系统中并且还提供后续处理的晶片冷却的负载锁定室，用于容纳晶片处理器的传送室，以及一个或更多的处理室具有可彼此隔离的两个或更多个处理区域，并且优选地共享公共气体供应源和公共排气泵。处理区域还优选地包括单独的气体分配组件和RF功率源，以在每个处理区域中在晶片表面上提供均匀的等离子体密度。处理室被配置为允许在至少两个处理区域中同时执行多个隔离过程，使得可以在室内同时处理至少两个晶片，具有由共用气源提供的高程度的过程控制，共用排气系统，独立的气体分配组件，独立的射频电源和独立的温度控制系统。

2. 发明授权

US5384008A Process and apparatus for full wafer deposition 失效
标题翻译：用于全晶圆沉积的工艺和设备
公开(公告)号：US5384008A
公开(公告)日：1995-01-24
申请号：US79481
申请日：1993-06-18
申请人： Ashok Sinha , Sasson Somekh
发明人： Ashok Sinha , Sasson Somekh
IPC分类号： C23C16/458 , H01L21/00
CPC分类号： H01L21/02087 , C23C16/4583 , H01L21/0209 , H01L21/68735 , H01L21/32136 , Y10S438/905 , Y10S438/928
摘要： A process and apparatus is described for depositing a layer of material over the entire frontside surface of a semiconductor wafer without leaving residues on the backside of said wafer. A semiconductor wafer is placed on the surface of a first wafer support without contacting the frontside surface of the wafer to thereby permit access by deposition materials to the entire frontside surface of the wafer, and then a layer of material is deposited on the entire frontside surface of the semiconductor wafer. To remove any deposits formed on the backside of the wafer during such a deposition, the coated wafer is then placed generally coaxially on the surface of a generally circular second wafer support which will permit access to the outermost portions of the backside of the wafer. In one embodiment the second wafer support is provided with an annular groove coaxially formed in the surface of the second wafer support which faces the backside of the wafer. This annular groove has an outer diameter larger than the diameter of the wafer and an inner diameter smaller than the outer diameter of that portion of the backside of the wafer not containing deposits thereon from the deposition step, so that all of the backside surface containing such depositions is exposed by the groove. The wafer is then etched to remove from the backside any materials deposited thereon during the deposition step, by permitting etchant materials to contact such backside deposits through the annular groove formed in the second wafer support.
摘要翻译：描述了用于在半导体晶片的整个前侧表面上沉积材料层而不在所述晶片的背面留下残留物的方法和装置。将半导体晶片放置在第一晶片支撑体的表面上，而不接触晶片的前侧表面，从而允许通过沉积材料进入晶片的整个前侧表面，然后在整个前侧表面上沉积一层材料的半导体晶片。为了在这样的沉积期间去除形成在晶片背面的任何沉积物，涂覆的晶片然后大致同轴地放置在大致圆形的第二晶片支撑件的表面上，这将允许进入晶片背面的最外部分。在一个实施例中，第二晶片支撑件设置有同轴地形成在面向晶片背面的第二晶片支撑件的表面中的环形槽。该环形槽的外径大于晶片的直径，内径小于晶片背面部分的外径，该晶片的背面不含有从沉积步骤沉积在其上的部分，所以包含这种凹槽露出沉积物。然后在沉积步骤期间，通过允许蚀刻剂材料通过形成在第二晶片支撑件中的环形槽接触这种背面沉积物，从而将晶片从背面剥离出沉积在其上的任何材料。

3. 发明授权

US06176667B1 Multideck wafer processing system 失效
标题翻译： Multideck晶圆处理系统
公开(公告)号：US06176667B1
公开(公告)日：2001-01-23
申请号：US08644636
申请日：1996-04-30
申请人： Kevin Fairbairn , Ashok Sinha
发明人： Kevin Fairbairn , Ashok Sinha
IPC分类号： B65G4907
CPC分类号： H01L21/67271 , H01L21/67017 , H01L21/67178 , H01L21/6719 , H01L21/67201 , H01L21/67742 , H01L21/67754 , Y10S414/137 , Y10S414/139 , Y10S414/141
摘要： A multideck wafer processing system is described for the treatment of semiconductor wafers. The system includes at least two process chambers stacked one above the other to provide for higher wafer throughput per unit area of cleanroom space. The stacked process chambers enable sharing of pressurization, gas, electrical, and control support services for the processing chambers.
摘要翻译：描述了用于处理半导体晶片的多层晶片处理系统。该系统包括至少两个堆叠在一起的处理室，以提供每单位面积洁净室空间的更高的晶片生产量。堆叠的处理室能够共享用于处理室的加压，气体，电气和控制支持服务。

4. 发明授权

US07709385B2 Method for depositing tungsten-containing layers by vapor deposition techniques 失效
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07709385B2
公开(公告)日：2010-05-04
申请号：US12335976
申请日：2008-12-16
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

5. 发明申请

US20090035865A1 MOISTURE SENSOR 审中-公开
标题翻译：水分传感器
公开(公告)号：US20090035865A1
公开(公告)日：2009-02-05
申请号：US11832130
申请日：2007-08-01
申请人： Colette Pamela DeMoor , Ashok Sinha , Ian Gibbons
发明人： Colette Pamela DeMoor , Ashok Sinha , Ian Gibbons
IPC分类号： G01N33/18 , B01J19/00 , G01N21/78
CPC分类号： G01N31/222 , G01N21/81
摘要： A moisture sensor is disclosed which measures cumulative exposure to moisture. The moisture sensor comprises a matrix having a hygroscopic material, a first reagent, and a second reagent which interact only in the presence of water to produce a detectable, irreversible change in the matrix to provide a moisture indication. The moisture sensor may be incorporated with a disposable diagnostic device, whereby a method for preventing the use of such a disposable diagnostic device if exposed to excessive cumulative humidity is also disclosed.
摘要翻译：公开了一种测量累积暴露于湿气的湿度传感器。水分传感器包括具有吸湿材料，第一试剂和第二试剂的基质，其仅在水存在下相互作用以在基质中产生可检测的不可逆变化以提供湿气指示。湿度传感器可以与一次性诊断装置并入，由此也公开了如果暴露于过度累积湿度时防止使用这种一次性诊断装置的方法。

6. 发明申请

US20070238305A1 PLASMA DIELECTRIC ETCH PROCESS INCLUDING EX-SITU BACKSIDE POLYMER REMOVAL FOR LOW-DIELECTRIC CONSTANT MATERIAL 失效
标题翻译：等离子体电介质蚀刻工艺，包括用于低介电常数材料的EX-SITU BACKSIDE POLMMER REMOVAL
公开(公告)号：US20070238305A1
公开(公告)日：2007-10-11
申请号：US11402074
申请日：2006-04-11
申请人： Gerardo Delgadino , Indrajit Lahiri , Teh-Tien Su , Brian Sheih , Ashok Sinha
发明人： Gerardo Delgadino , Indrajit Lahiri , Teh-Tien Su , Brian Sheih , Ashok Sinha
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32357 , H01L21/0209
摘要： A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluorocarbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective fluorocarbon polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C., exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.
摘要翻译：首先在蚀刻反应器中进行用于蚀刻使用光致抗蚀剂掩模的多孔碳掺杂氧化硅电介质层的等离子体蚀刻工艺，通过在工件上执行基于碳氟化合物的蚀刻工艺来蚀刻介电层的暴露部分，同时沉积保护性氟碳聚合物在光刻胶掩模上。然后，在灰化反应器中，通过将工件加热到超过100摄氏度，去除聚合物和光致抗蚀剂，暴露所述工件背面的周边部分，并提供来自氢处理气体的等离子体的产物，以减少包含在聚合物和光致抗蚀剂，直到聚合物已从所述工件的背面去除。处理气体优选含有氢气和水蒸汽，尽管主要成分是氢气。晶片（工件）背面可以通过延伸晶片提升销来暴露。

7. 发明授权

US07220673B2 Method for depositing tungsten-containing layers by vapor deposition techniques 有权
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07220673B2
公开(公告)日：2007-05-22
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

8. 发明申请

US20070066064A1 Methods to avoid unstable plasma states during a process transition 失效
标题翻译：在过程转换过程中避免不稳定的等离子体状态的方法
公开(公告)号：US20070066064A1
公开(公告)日：2007-03-22
申请号：US11372752
申请日：2006-03-10
申请人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
发明人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
IPC分类号： H01L21/00 , G01L21/30 , H01L21/302
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76807
摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
摘要翻译：在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

9. 发明申请

US20060035025A1 Activated species generator for rapid cycle deposition processes 审中-公开
标题翻译：用于快速循环沉积工艺的活性物种发生器
公开(公告)号：US20060035025A1
公开(公告)日：2006-02-16
申请号：US11146295
申请日：2005-06-06
申请人： Donald Verplancken , Ashok Sinha
发明人： Donald Verplancken , Ashok Sinha
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： C23C16/45542 , C23C16/452 , H01J37/32357
摘要： A method for providing activated species for a cyclical deposition process is provided herein. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the gas to create a volume of reactive species, delivering a fraction of the reactive species into a processing region to react within a substrate therein, and maintaining at least a portion of the gas remaining in the plasma generator in an activated state after delivering the fraction of the gas into the process region. The plasma generator may include a high density plasma (HDP) generator, a microwave generator, a radio-frequency (RF) generator, an inductive-coupled plasma (ICP) generator, a capacitively coupled generator, or combinations thereof.
摘要翻译：本文提供了用于提供用于循环沉积工艺的活化物质的方法。在一个方面，所述方法包括将待激活的气体输送到等离子体发生器中，激活气体以产生一定体积的反应物质，将一部分反应性物质输送到处理区域中以在其内部的基底内反应并维持在在将一部分气体输送到处理区域中之后，剩余在等离子体发生器中的气体的至少一部分处于活化状态。等离子体发生器可以包括高密度等离子体（HDP）发生器，微波发生器，射频（RF）发生器，感应耦合等离子体（ICP）发生器，电容耦合发生器或其组合。

10. 发明申请

US20060027329A1 Multi-frequency plasma enhanced process chamber having a torroidal plasma source 审中-公开
标题翻译：具有环形等离子体源的多频等离子体增强处理室
公开(公告)号：US20060027329A1
公开(公告)日：2006-02-09
申请号：US10914947
申请日：2004-08-09
申请人： Ashok Sinha , Daniel Hoffman , John Holland
发明人： Ashok Sinha , Daniel Hoffman , John Holland
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： H01J37/32165 , H01J37/321
摘要： A method and apparatus for processing a substrate includes a reactor chamber having a chamber wall and containing a substrate support. An electrode overlies the substrate and is spaced apart from the substrate support. One or more plasma sources maintains plasma in the reactor in one or more torroidal paths using a first frequency. One or more RF power generators supply power to the electrode at a second frequency that is different from the first frequency.
摘要翻译：用于处理衬底的方法和装置包括具有室壁并包含衬底支撑件的反应室。电极覆盖在衬底上并且与衬底支撑件间隔开。一个或多个等离子体源使用第一频率在一个或多个环形路径中保持反应器中的等离子体。一个或多个RF发电机以不同于第一频率的第二频率向电极供电。

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