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    • 8. 发明授权
    • Ultra high throughput wafer vacuum processing system
    • 超高产量晶圆真空处理系统
    • US5855681A
    • 1999-01-05
    • US751485
    • 1996-11-18
    • Dan MaydanSasson SomekhAshok SinhaKevin FairbairnChristopher LaneKelly ColborneHari K. PonnekantiW. N.(Nick) Taylor
    • Dan MaydanSasson SomekhAshok SinhaKevin FairbairnChristopher LaneKelly ColborneHari K. PonnekantiW. N.(Nick) Taylor
    • H01L21/00H01L21/205H01L21/677H01L21/687C23C16/00C23F1/02
    • H01L21/67167H01L21/6719H01L21/67196H01L21/67201H01L21/67742H01L21/68707H01L21/68785
    • The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.
    • 本发明通常提供一种盒式到盒式真空处理系统,其同时处理多个晶片,并且结合了单晶片处理室和多个晶片处理的优点,用于高质量晶片处理,高晶圆吞吐量和减小的占地面积。 根据本发明的一个方面,该系统优选地是分级真空系统,其通常包括用于将晶片引入系统中并且还提供后续处理的晶片冷却的负载锁定室,用于容纳晶片处理器的传送室,以及一个或 更多的处理室具有可彼此隔离的两个或更多个处理区域,并且优选地共享公共气体供应源和公共排气泵。 处理区域还优选地包括单独的气体分配组件和RF功率源,以在每个处理区域中在晶片表面上提供均匀的等离子体密度。 处理室被配置为允许在至少两个处理区域中同时执行多个隔离过程,使得可以在室内同时处理至少两个晶片,具有由共用气源提供的高程度的过程控制,共用排气系统 ,独立的气体分配组件,独立的射频电源和独立的温度控制系统。