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1. 发明申请

US20070014921A1 Method of applying a design to a surface 有权
标题翻译：将设计应用于表面的方法
公开(公告)号：US20070014921A1
公开(公告)日：2007-01-18
申请号：US11447817
申请日：2006-06-06
申请人： James Kimball , Eric Minor , Ketan Shah , Marcia Santaga , Daniel Bullis , Gafur Zainiev , Douglas Rodenkirch
发明人： James Kimball , Eric Minor , Ketan Shah , Marcia Santaga , Daniel Bullis , Gafur Zainiev , Douglas Rodenkirch
IPC分类号： B05D5/00 , B05D3/02 , B29C71/04
CPC分类号： B44C1/105 , B05C17/06 , B41M7/0072 , B41M7/009 , B41N1/242 , B41N1/248 , B44C1/18 , B44C1/20 , B44C3/02 , B44D2/007 , B44D5/00 , C09D5/008 , C09D11/0235 , C11D3/37 , C11D3/3715 , C11D3/3726 , C11D3/3749 , C11D11/0058 , C11D11/007 , D06P1/0012 , D06P1/0016 , D06P1/44 , D06P1/52 , D06P1/5264 , D06P1/5271 , D06P1/54 , D06P1/613 , D06P5/001 , D06Q1/00 , D06Q1/06 , D06Q1/10 , Y10T156/10 , Y10T428/249921 , Y10T428/25 , Y10T428/253 , Y10T428/254 , Y10T428/28 , Y10T428/31504
摘要： Compositions, methods, apparatuses, kits, and combinations are described for permanently or temporarily re-designing, decorating, and/or re-coloring a surface. The compositions useful in the present disclosure include a décor product that is formulated to be applied and affixed to a surface. If desired, the décor product may be substantially removed from the surface before being affixed thereto. If a user desires to remove the décor product, the décor product is formulated to be removed by a number of methods including, for example, vacuuming, wet extraction, chemical application, and the like. If the user desires to affix the décor product to the surface in a permanent or semi-permanent manner, the décor product may be affixed to the surface by applying energy thereto in the form of, for example, heat, pressure, emitted waves, an emitted electrical field, a magnetic field, and/or a chemical. The décor product may also be utilized in the form of a kit or in conjunction with a design device, such as a stencil, to control the application of the décor product to create, for example, a pattern on the surface.
摘要翻译：描述了组合物，方法，装置，试剂盒和组合，用于永久地或暂时地重新设计，装饰和/或重新着色表面。用于本公开的组合物包括配制成施用并固定在表面上的装饰产品。如果需要，装饰产品可以在被固定到其之前基本上从表面上移除。如果用户想要去除装饰产品，则将该装饰产品配制成通过多种方法除去，包括例如抽真空，湿法萃取，化学应用等。如果用户希望以永久或半永久的方式将装饰产品粘贴到表面上，则可以通过以例如热，压力，发射波的形式施加能量来将装饰产品固定到表面上发射电场，磁场和/或化学物质。装饰产品还可以以套件的形式或与设计装置（例如模版）结合使用，以控制装饰产品的应用以产生例如表面上的图案。

2. 发明申请

US20060288499A1 Composition for application to a surface 有权
公开(公告)号：US20060288499A1
公开(公告)日：2006-12-28
申请号：US11447439
申请日：2006-06-06
申请人： James Kimball , Ketan Shah , Eric Minor , Marcia Santaga
发明人： James Kimball , Ketan Shah , Eric Minor , Marcia Santaga
IPC分类号： C09B67/00
CPC分类号： B44C1/105 , B05C17/06 , B41M7/0072 , B41M7/009 , B41N1/242 , B41N1/248 , B44C1/18 , B44C1/20 , B44C3/02 , B44D2/007 , B44D5/00 , C09D5/008 , C09D11/0235 , C11D3/37 , C11D3/3715 , C11D3/3726 , C11D3/3749 , C11D11/0058 , C11D11/007 , D06P1/0012 , D06P1/0016 , D06P1/44 , D06P1/52 , D06P1/5264 , D06P1/5271 , D06P1/54 , D06P1/613 , D06P5/001 , D06Q1/00 , D06Q1/06 , D06Q1/10 , Y10T156/10 , Y10T428/249921 , Y10T428/25 , Y10T428/253 , Y10T428/254 , Y10T428/28 , Y10T428/31504
摘要： Compositions, methods, apparatuses, kits, and combinations are described for permanently or temporarily re-designing, decorating, and/or re-coloring a surface. The compositions useful in the present disclosure include a décor product that is formulated to be applied and affixed to a surface. If desired, the décor product may be substantially removed from the surface before being affixed thereto. If a user desires to remove the décor product, the décor product is formulated to be removed by a number of methods including, for example, vacuuming, wet extraction, chemical application, and the like. If the user desires to affix the décor product to the surface in a permanent or semi-permanent manner, the décor product may be affixed to the surface by applying energy thereto in the form of, for example, heat, pressure, emitted waves, an emitted electrical field, a magnetic field, and/or a chemical. The décor product may also be utilized in the form of a kit or in conjunction with a design device, such as a stencil, to control the application of the décor product to create, for example, a pattern on the surface.

3. 发明申请

US20060276367A1 Method of neutralizing a stain on a surface 有权
公开(公告)号：US20060276367A1
公开(公告)日：2006-12-07
申请号：US11447787
申请日：2006-06-06
申请人： Ketan Shah , James Kimball , Marcia Santaga , Eric Minor
发明人： Ketan Shah , James Kimball , Marcia Santaga , Eric Minor
IPC分类号： C11D3/00
CPC分类号： B44C1/105 , B05C17/06 , B41M7/0072 , B41M7/009 , B41N1/242 , B41N1/248 , B44C1/18 , B44C1/20 , B44C3/02 , B44D2/007 , B44D5/00 , C09D5/008 , C09D11/0235 , C11D3/37 , C11D3/3715 , C11D3/3726 , C11D3/3749 , C11D11/0058 , C11D11/007 , D06P1/0012 , D06P1/0016 , D06P1/44 , D06P1/52 , D06P1/5264 , D06P1/5271 , D06P1/54 , D06P1/613 , D06P5/001 , D06Q1/00 , D06Q1/06 , D06Q1/10 , Y10T156/10 , Y10T428/249921 , Y10T428/25 , Y10T428/253 , Y10T428/254 , Y10T428/28 , Y10T428/31504
摘要： Compositions, methods, apparatuses, kits, and combinations are described for neutralizing a stain on a surface. The compositions useful in the present disclosure include a composition that is formulated to be applied and affixed to a surface. If desired, the composition may be substantially removed from the surface to remove a portion or substantially all of the stain before being affixed to the surface. If a user desires to remove the composition from the surface, the composition is formulated to be removed by a number of methods including, for example, vacuuming, wet extraction, chemical application, and the like. If the user desires to affix the composition to the surface in a permanent or semi-permanent manner, the composition may be affixed to the surface by applying energy thereto in the form of, for example, heat, pressure, emitted waves, an emitted electrical field, a magnetic field, and/or a chemical. The compositions may also be utilized in the form of a kit or in conjunction with a design device, such as a stencil, to control the application of the composition to create, for example, a pattern on the surface.

4. 发明申请

US20070089621A1 Design devices for applying a design to a surface 审中-公开
标题翻译：将设计应用于表面的设计设备
公开(公告)号：US20070089621A1
公开(公告)日：2007-04-26
申请号：US11447694
申请日：2006-06-06
申请人： James Kimball , Daniel Bullis , Eric Minor , Douglas Rodenkirch , Todd Bakken
发明人： James Kimball , Daniel Bullis , Eric Minor , Douglas Rodenkirch , Todd Bakken
IPC分类号： B05C17/06
CPC分类号： B44C1/105 , B05C17/06 , B41M7/0072 , B41M7/009 , B41N1/242 , B41N1/248 , B44C1/18 , B44C1/20 , B44C3/02 , B44D2/007 , B44D5/00 , C09D5/008 , C09D11/0235 , C11D3/37 , C11D3/3715 , C11D3/3726 , C11D3/3749 , C11D11/0058 , C11D11/007 , D06P1/0012 , D06P1/0016 , D06P1/44 , D06P1/52 , D06P1/5264 , D06P1/5271 , D06P1/54 , D06P1/613 , D06P5/001 , D06Q1/00 , D06Q1/06 , D06Q1/10 , Y10T156/10 , Y10T428/249921 , Y10T428/25 , Y10T428/253 , Y10T428/254 , Y10T428/28 , Y10T428/31504
摘要： Compositions, methods, apparatuses, kits, and combinations are described for permanently or temporarily re-designing, decorating, and/or re-coloring a surface. The compositions useful in the present disclosure include a décor product that is formulated to be applied and affixed to a surface. If desired, the décor product may be substantially removed from the surface before being affixed thereto. If a user desires to remove the décor product, the décor product is formulated to be removed by a number of methods including, for example, vacuuming, wet extraction, chemical application, and the like. If the user desires to affix the décor product to the surface in a permanent or semi-permanent manner, the décor product may be affixed to the surface by applying energy thereto in the form of, for example, heat, pressure, emitted waves, an emitted electrical field, a magnetic field, and/or a chemical. The décor product may also be utilized in the form of a kit or in conjunction with a design device, such as a stencil, to control the application of the décor product to create, for example, a pattern on the surface.
摘要翻译：描述了组合物，方法，装置，试剂盒和组合，用于永久地或暂时地重新设计，装饰和/或重新着色表面。用于本公开的组合物包括配制成施用并固定在表面上的装饰产品。如果需要，装饰产品可以在被固定到其之前基本上从表面上移除。如果用户想要去除装饰产品，则将该装饰产品配制成通过多种方法除去，包括例如抽真空，湿法萃取，化学应用等。如果用户希望以永久或半永久的方式将装饰产品粘贴到表面上，则可以通过以例如热，压力，发射波的形式施加能量来将装饰产品固定到表面上发射电场，磁场和/或化学物质。装饰产品还可以以套件的形式或与设计装置（例如模板）一起使用，以控制装饰产品的应用以产生例如表面上的图案。

5. 发明申请

US20060064826A1 Electrostatic dust collection wand 审中-公开
标题翻译：静电除尘魔杖
公开(公告)号：US20060064826A1
公开(公告)日：2006-03-30
申请号：US10857154
申请日：2004-09-27
申请人： James Kimball
发明人： James Kimball
IPC分类号： A47L13/40
CPC分类号： A47L13/40 , A47L13/38
摘要： An electrostatic dust wand has a handle, a triboelectric charge generator, and a fibrous material. The triboelectric charge generator is coupled to the handle, and generates an electrostatic charge to attract dust particles to the cleaning implement. The fibrous material at least partially covers the triboelectric charge generator, to collect and to retain dust particles. The triboelectric charge generator has at least one movable member having a first triboelectric property, and an actuator for driving the at least one movable member. The electrostatic charge may be generated by movement of he at least one movable member against the fibrous material. Alternatively, or in addition, the electrostatic charge may be generated by relative movement of two members of the triboelectric charge generator against one another.
摘要翻译：静电防尘棒具有手柄，摩擦电荷发生器和纤维材料。摩擦电荷发生器耦合到手柄，并产生静电荷以将尘埃颗粒吸引到清洁器具上。纤维材料至少部分地覆盖摩擦电荷发生器，以收集和保留灰尘颗粒。所述摩擦电荷发生器具有至少一个具有第一摩擦学特性的可移动部件和用于驱动所述至少一个可移动部件的致动器。静电电荷可以通过使至少一个可动构件抵靠纤维材料移动而产生。或者或另外，静电电荷可以通过摩擦电荷发生器的两个部件相对于彼此的相对运动而产生。

6. 发明授权

US5963801A Method of forming retrograde well structures and punch-through barriers using low energy implants 失效
标题翻译：使用低能量植入物形成逆行井结构和穿通障碍的方法
公开(公告)号：US5963801A
公开(公告)日：1999-10-05
申请号：US770109
申请日：1996-12-19
申请人： Sheldon Aronowitz , Laique Khan , James Kimball
发明人： Sheldon Aronowitz , Laique Khan , James Kimball
IPC分类号： H01L21/265 , H01L21/8238 , H01L27/092
CPC分类号： H01L21/26586 , H01L21/26513 , H01L21/823892
摘要： A retrograde well in a CMOS device is formed by using a low energy ion implanter. Dopant atoms are implanted into a bare surface of the device's substrate, in a direction that is orthogonal to the surface of the substrate (for a substrate having a orientation). The well implant can be performed at an energy below 220 keV. Chained implants for a punch-through barrier in the retrograde well can be performed after the well implant. When the substrate is annealed, the punch-through barrier is activated at the same time as the retrograde well.
摘要翻译：通过使用低能离子注入机形成CMOS器件中的逆行阱。将掺杂原子沿着与衬底的表面（具有<100>取向的衬底）正交的方向注入器件衬底的裸露表面。可以在低于220keV的能量下进行井注入。逆行井中的穿通屏障的链接植入物可以在植入物之后进行。当衬底退火时，穿通屏障在逆行井的同时被激活。

7. 发明授权

US07084408B1 Vaporization and ionization of metals for use in semiconductor processing 失效
标题翻译：用于半导体加工的金属的蒸发和电离
公开(公告)号：US07084408B1
公开(公告)日：2006-08-01
申请号：US10697507
申请日：2003-10-29
申请人： James Kimball , Sheldon Aronowitz
发明人： James Kimball , Sheldon Aronowitz
IPC分类号： H01J27/00 , H01J37/08 , G21K5/10
CPC分类号： H01J27/04 , C23C14/228 , C23C14/32 , C23C14/48
摘要： Techniques for vaporizing and handling a vaporized metallic element or metallic element salt with a heated inert carrier gas for further processing. The vaporized metallic element or salt is carried by an inert carrier gas heated to the same temperature as the vaporizing temperature to a heated processing chamber. The metal or salt vapor may be ionized (and implanted) or deposited on substrates. Apparatus for accomplishing these techniques, which include carrier gas heating chambers and heated processing chambers are also provided.
摘要翻译：用加热的惰性载气汽化和处理蒸发的金属元素或金属元素盐进行进一步处理的技术。蒸发的金属元素或盐由加热至与蒸发温度相同的温度的惰性载气携带到加热的处理室。金属或盐蒸气可以离子化（和注入）或沉积在基底上。还提供了用于实现这些技术的装置，其包括载气加热室和加热处理室。

8. 发明授权

US06180470B2 FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements 失效
标题翻译：具有轻掺杂漏极区域的FET，其被形成有反向和不对称的多个元件
公开(公告)号：US06180470B2
公开(公告)日：2001-01-30
申请号：US08770046
申请日：1996-12-19
申请人： Sheldon Aronowitz , Laique Khan , James Kimball
发明人： Sheldon Aronowitz , Laique Khan , James Kimball
IPC分类号： H01L21336
CPC分类号： H01L29/6659 , H01L21/2652 , H01L21/26586 , H01L29/1045 , H01L29/1083 , H01L29/7833 , Y10S438/925
摘要： Lifetime of a short-channel NMOS device is increased by modifying distributions of electrically active LDD dopant at boundaries of the device's LDD regions. The LDD dopant distributions are modified by implanting counter-dopants at the boundaries of the LDD regions. Group III counter-dopants such as boron and group IV elements such as silicon alter activation properties of the LDD dopant. The dopant distributions are modified at the device's n-junctions to reduce the maximum electric field displacement at an interface defined by the device's gate and substrate. The dopant distributions can be further modified to shape the n-junctions such that hot carriers are injected away from the gate.
摘要翻译：通过修改器件的LDD区域边界处的电活性LDD掺杂剂的分布来增加短沟道NMOS器件的寿命。通过在LDD区域的边界处注入反掺杂剂来修改LDD掺杂剂分布。 III族反掺杂剂如硼和IV族元素如硅改变LDD掺杂剂的活化性质。掺杂剂分布在器件的n结处修改，以减少由器件的栅极和衬底限定的界面处的最大电场位移。可以进一步修改掺杂剂分布以使n结成形，使得热载流子从栅极注入。

9. 发明授权

US6087229A Composite semiconductor gate dielectrics 失效
标题翻译：复合半导体栅极电介质
公开(公告)号：US6087229A
公开(公告)日：2000-07-11
申请号：US37588
申请日：1998-03-09
申请人： Sheldon Aronowitz , David Chan , James Kimball , David Lee , John Haywood , Valeriy Sukharev
发明人： Sheldon Aronowitz , David Chan , James Kimball , David Lee , John Haywood , Valeriy Sukharev
IPC分类号： H01L21/28 , H01L29/51 , H01L21/336
CPC分类号： H01L21/28194 , H01L21/0214 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02326 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L29/513 , H01L29/518
摘要： Provided are methods for fabricating hardened composite thin layer gate dielectrics. According to preferred embodiments of the present invention, composite gate dielectrics may be produced as bilayers having oyxnitride portions with nitrogen contents above 10 atomic percent, while avoiding the drawbacks of prior art nitridization methods. In one aspect of the present invention, a hardened composite thin layer gate dielectric may be formed by deposition of a very thin silicon layer on a very thin oxide layer on a silicon substrate, followed by low energy plasma nitridization and subsequent oxidation of the thin silicon layer. In another aspect of the invention, low energy plasma nitridization of a thin oxide layer formed on a silicon substrate may be followed by deposition of a very thin silicon layer and subsequent oxidation, or additional low energy plasma nitridization and then oxidation, of the thin silicon layer.
摘要翻译：提供制造硬化复合薄层栅极电介质的方法。根据本发明的优选实施方案，复合栅极电介质可以制备成具有氮含量高于10原子百分比的氮氧化物部分的双层，同时避免了现有技术氮化方法的缺点。在本发明的一个方面，可以通过在硅衬底上的非常薄的氧化物层上沉积非常薄的硅层，随后进行低能量等离子体氮化和随后的薄硅氧化来形成硬化的复合薄层栅极电介质层。在本发明的另一方面，形成在硅衬底上的薄氧化物层的低能量等离子体氮化可以随后沉积非常薄的硅层，然后沉积薄硅层，随后进行氧化或另外的低能量等离子体氮化，然后氧化层。

10. 发明授权

US5585286A Implantation of a semiconductor substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant subsequently implanted into the substrate to form P- LDD region of a PMOS device 失效
标题翻译：将具有受控量的惰性气体离子的半导体衬底植入以减少随后注入到衬底中的硼掺杂物的沟道和/或扩散以形成PMOS器件的P-LDD区
公开(公告)号：US5585286A
公开(公告)日：1996-12-17
申请号：US521795
申请日：1995-08-31
申请人： Sheldon Aronowitz , James Kimball , Yu-Lam Ho , Gobi Padmanabhan , Douglas T. Grider , Chi-Yi Kao
发明人： Sheldon Aronowitz , James Kimball , Yu-Lam Ho , Gobi Padmanabhan , Douglas T. Grider , Chi-Yi Kao
IPC分类号： H01L21/265 , H01L21/336
CPC分类号： H01L29/6659 , H01L21/26506
摘要： A process and resulting product are described for controlling the channeling and/or diffusion of a boron dopant in a P- region forming the lightly doped drain (LDD) region of a PMOS device in a single crystal semiconductor substrate, such as a silicon substrate. The channeling and/or diffusion of the boron dopant is controlled by implanting the region, prior to implantation with a boron dopant,, with noble gas ions, such as argon ions, at a dosage at least equal to the subsequent dosage of the implanted boron dopant, but not exceeding an amount equivalent to the implantation of about 3.times.10.sup.13 argon ions/cm.sup.2 into a silicon substrate, whereby channeling and diffusion of the subsequently implanted boron dopant is inhibited without, however, amorphizing the semiconductor substrate.
摘要翻译：描述了一种工艺和产生的产品，用于控制在诸如硅衬底的单晶半导体衬底中形成PMOS器件的轻掺杂漏极（LDD）区域的P区中的硼掺杂剂的沟道化和/或扩散。硼掺杂剂的通道和/或扩散通过在用硼掺杂剂注入之前用惰性气体离子（例如氩离子）注入该区域，剂量至少等于注入硼的后续剂量掺杂剂，但不超过与硅衬底中注入约3×1013氩离子/ cm 2相当的量，由此抑制随后注入的硼掺杂剂的通道化和扩散，而不会使半导体衬底非晶化。

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