会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • DETECTOR FOR ALPHA PARTICLE OR COSMIC RAY
    • ALPHA颗粒或COSMIC RAY的检测器
    • US20050012045A1
    • 2005-01-20
    • US10604416
    • 2003-07-18
    • John FifieldPaul KartschokeWilliam KIaasenStephen KosonockyRandy MannJeffery OppoldNorman Rohrer
    • John FifieldPaul KartschokeWilliam KIaasenStephen KosonockyRandy MannJeffery OppoldNorman Rohrer
    • G01J1/00G11C11/412
    • G11C11/4125
    • A detector circuit and method for detecting a silicon well voltage or current to indicate an alpha particle or cosmic ray strike of the silicon well. One significant application for the detection circuit of the present invention is for the redundancy repair latches that are used in SRAMs. The redundancy repair latches are normally written once at power-up to record failed latch data and are not normally written again. If one of the latches changes states due to an SER (Soft Error Rate-such as a strike by an alpha particle or cosmic ray) event, the repair data in the redundancy latches of the SRAM would now be incorrectly mapped. The detector circuit and method monitors the latches for the occurrence of an SER event, and responsive thereto issues a reload of the repair data to the redundancy repair latches. A first embodiment of the detector circuit differentially detects the floating voltages of first and second silicon wells during periods of non-operation of the circuits fabricated in the first and second silicon wells. In a second embodiment, a detector circuit monitors the background voltage level of a single silicon well over first and second consecutive periods of time. A second application for the detection circuit is for traditional logic circuits.
    • 一种用于检测硅阱电压或电流以指示硅阱的α粒子或宇宙射线冲击的检测器电路和方法。 本发明的检测电路的一个重要应用是用于SRAM中的冗余修复锁存器。 冗余修复锁存器在上电时通常写入一次,以记录失败的锁存数据,并且通常不会再次写入。 如果其中一个锁存器由于SER(软错误率(例如α粒子或宇宙射线的击穿))事件而改变状态,则SRAM的冗余锁存器中的修复数据现在将被错误地映射。 检测器电路和方法监视锁存器以发生SER事件,并且响应于此,将修复数据重新加载到冗余修复锁存器。 检测器电路的第一实施例在第一和第二硅阱中制造的电路的非操作期间差分地检测第一和第二硅阱的浮置电压。 在第二实施例中,检测器电路在第一和第二连续时间段内监测单个硅阱的背景电压电平。 检测电路的第二个应用是传统的逻辑电路。
    • 7. 发明申请
    • Electronically programmable antifuse and circuits made therewith
    • 电子可编程反熔丝和由其制成的电路
    • US20050133884A1
    • 2005-06-23
    • US11051703
    • 2005-02-04
    • John FifieldWagdi AbadeerWilliam Tonti
    • John FifieldWagdi AbadeerWilliam Tonti
    • H01L23/525H01L29/00
    • H01L23/5252H01L2924/0002H01L2924/3011H01L2924/00
    • An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).
    • 一种反熔丝装置(120),其包括彼此串联布置的偏置元件(124)和可编程反熔丝元件(128),以形成具有位于偏置和反熔丝元件之间的输出节点(F)的分压器。 当反熔丝装置处于其未编程状态时,偏置元件和反熔丝元件中的每一个都是不导电的。 当反熔丝装置处于其编程状态时,偏置元件保持不导电,但是反熔丝元件是导电的。 反熔丝元件在其未编程状态和编程状态之间的电阻差异导致当在反熔断器件上施加1V的电压时,在输出节点处看到的电压差为几百微升。 该电压差非常高以至于可以使用简单的感测电路(228)容易地感测。