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    • 3. 发明授权
    • Plasma processing method and plasma processing apparatus
    • 等离子体处理方法和等离子体处理装置
    • US08642478B2
    • 2014-02-04
    • US13214372
    • 2011-08-22
    • Yoshinobu OoyaAkira TanabeYoshinori Yasuta
    • Yoshinobu OoyaAkira TanabeYoshinori Yasuta
    • H01L21/302H01L21/461
    • H01J37/02H01J37/32091H01J37/32165H01J2237/3348
    • There is provided a plasma processing apparatus capable of optimizing a plasma process in response to various requirements of a micro processing by effectively controlling a RF bias function. In this plasma processing apparatus, a high frequency power RFH suitable for generating plasma of a capacitively coupling type is applied to an upper electrode 48 (or lower electrode 16) from a third high frequency power supply 66, and two high frequency powers RFL1 (0.8 MHz) and RFL2 (13 MHz) suitable for attracting ions are applied to the susceptor 16 from first and second high frequency power supplies 36 and 38, respectively, in order to control energy of ions incident onto a semiconductor wafer W from the plasma. A control unit 88 controls a total power and a power ratio of the first and second high frequency powers RFL1 and RFL2 depending on specifications, conditions or recipes of an etching process.
    • 提供了一种能够通过有效地控制RF偏置功能来响应于微处理的各种要求来优化等离子体处理的等离子体处理装置。 在该等离子体处理装置中,适用于产生电容耦合型等离子体的高频功率RFH从第三高频电源66施加到上电极48(或下电极16),并且将两个高频功率RFL1(0.8 MHz)和适合于吸引离子的RFL2(13MHz)分别从第一和第二高频电源36和38施加到基座16,以便控制从等离子体入射到半导体晶片W上的离子的能量。 控制单元88根据蚀刻处理的规格,条件或配方来控制第一和第二高频功率RFL1和RFL2的总功率和功率比。
    • 4. 发明授权
    • Evaluation device and circuit design method used for the same
    • 评估装置和电路设计方法相同
    • US07404157B2
    • 2008-07-22
    • US10540973
    • 2003-12-25
    • Akira Tanabe
    • Akira Tanabe
    • G06F17/50
    • G01R31/2621
    • There is provided an evaluation apparatus capable of measuring the I-V characteristic in the MOSFET AC operation with a high accuracy. There are also provided a circuit design method and a circuit design system used for the evaluation apparatus. In the evaluation apparatus (1), an AC input signal superimposing circuit (11) applies DC voltage to the MOSFET gate•source•drain•substrate and superimposes an AC input signal of very small voltage on the gate. An AC component measurement circuit (12) measures an AC component of the current flowing between the source and the drain at that time. A mutual conductance calculation circuit (13) compares the amplitude of the AC component of the current with the amplitude of the AC input signal and calculates, from this ratio, the mutual conductance in the frequency of the AC input signal of the MOSFET.
    • 提供了一种能够以高精度测量MOSFET交流运行中的I-V特性的评估装置。 还提供了用于评估装置的电路设计方法和电路设计系统。 在评价装置(1)中,交流输入信号叠加电路(11)向MOSFET栅极源极施加直流电压,并在栅极上叠加极小电压的交流输入信号。 交流分量测量电路(12)测量此时在源极和漏极之间流动的电流的交流分量。 电导计算电路(13)将电流的交流分量的振幅与交流输入信号的振幅进行比较,并从该比率计算出MOSFET的交流输入信号的频率的互导。
    • 5. 发明授权
    • Laser plumbing device, long member plumbing device and long member plumbing method
    • 激光管道装置,长件管道装置和长件管道方法
    • US06449856B1
    • 2002-09-17
    • US09353151
    • 1999-07-14
    • Yuuji MatsumotoTatsusei MinamiOsamu YodaAkira Tanabe
    • Yuuji MatsumotoTatsusei MinamiOsamu YodaAkira Tanabe
    • G01C910
    • G01C15/105Y10S33/21
    • A laser plumbing device including a laser beam emitting device; a supporting device for supporting the laser beam emitting device and allowing swinging movements of the laser beam emitting device in a first direction X1 and a second direction Y1; a two-direction drive device for swinging the laser beam emitting device in the first and second directions X1 and Y1; an inclination angle detecting device for detecting an inclination angle of the laser beam emitting direction with respect to the vertical direction; and a controller for controlling the position of the laser beam emitting device by the two-direction drive device so as to change the laser beam emitting direction toward the vertical direction based on the angle detected by the inclination angle detecting device. The long member plumbing device and method utilizing the laser plumbing device.
    • 一种激光管道装置,包括激光束发射装置; 支撑装置,用于支撑激光束发射装置并允许激光束发射装置在第一方向X1和第二方向Y1上摆动; 用于在第一和第二方向X1和Y1上摆动激光束发射装置的双向驱动装置; 用于检测激光束发射方向相对于垂直方向的倾斜角度的倾斜角度检测装置; 以及控制器,用于通过双向驱动装置控制激光束发射装置的位置,以便基于由倾斜角度检测装置检测的角度将激光束发射方向改变为垂直方向。 使用激光管道装置的长件管件装置和方法。
    • 9. 发明申请
    • TORQUE CONTROL DEVICE
    • 扭矩控制装置
    • US20150153747A1
    • 2015-06-04
    • US14400182
    • 2012-08-06
    • Akira Tanabe
    • Akira Tanabe
    • G05D17/02G05B15/02
    • G05D17/02B23Q15/013G05B15/02G05B2219/50216
    • For a torque control device that drives a torque control shaft in synchronism with a main control shaft while applying, through the torque control shaft, a predetermined pushing force to a workpiece driven by the main control shaft, a torque control device is obtained which can prevent a positional deviation from being generated even when the main control shaft is moved. The maximum and minimum values of the mechanical parameter representing the mechanical property of the driver driven by the torque control shaft are stored, and either the maximum or minimum mechanical parameter value stored in a memory means is selected according to the main control shaft's driving state, whereby drive torque necessary for following up the main control shaft's driving can be calculated so as to cause the pushing force to be augmented.
    • 对于通过转矩控制轴向由主控制轴驱动的工件施加规定的推压而与主控制轴同步地驱动转矩控制轴的转矩控制装置,获得能够防止 即使主控制轴移动也不会产生位置偏差。 存储表示由转矩控制轴驱动的驱动器的机械特性的机械参数的最大值和最小值,并且根据主控制轴的驱动状态选择存储在存储装置中的最大或最小机械参数值, 从而可以计算用于跟随主控制轴的驱动所需的驱动转矩,从而增加推力。
    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US09042117B2
    • 2015-05-26
    • US13064036
    • 2011-03-02
    • Kenichiro HijiokaAkira TanabeYoshihiro Hayashi
    • Kenichiro HijiokaAkira TanabeYoshihiro Hayashi
    • H05K1/11H05K1/14H01L23/522
    • H01L23/5227H01L23/5225H01L2924/0002H01L2924/00
    • A semiconductor device effectively suppress the problem of mutual interaction occurring between an inductor element and wires positioned above the inductor element formed over the same chip. A semiconductor device includes a semiconductor substrate and a multi-wiring layer formed overlying that semiconductor substrate, and in which the multi-wiring layer includes: the inductor element and three successive wires and a fourth wire formed above the inductor element; and two shielded conductors at a fixed voltage potential and covering the inductor element as seen from a flat view, and formed between the inductor element and three successive wires and a fourth wire formed above the inductor element.
    • 半导体器件有效地抑制了电感器元件和位于同一芯片上形成的电感器元件上方的电线之间发生相互作用的问题。 半导体器件包括半导体衬底和覆盖该半导体衬底的多层布线层,多层布线层包括:电感器元件和三个连续的布线和形成在电感器元件上方的第四布线; 和两个固定电压电位的屏蔽导体,从平面图可以看到电感器元件,并形成在电感器元件和三个连续的导线之间,并形成在电感器元件上方的第四根导线。