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1. 发明授权

US08642478B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08642478B2
公开(公告)日：2014-02-04
申请号：US13214372
申请日：2011-08-22
申请人： Yoshinobu Ooya , Akira Tanabe , Yoshinori Yasuta
发明人： Yoshinobu Ooya , Akira Tanabe , Yoshinori Yasuta
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J37/02 , H01J37/32091 , H01J37/32165 , H01J2237/3348
摘要： There is provided a plasma processing apparatus capable of optimizing a plasma process in response to various requirements of a micro processing by effectively controlling a RF bias function. In this plasma processing apparatus, a high frequency power RFH suitable for generating plasma of a capacitively coupling type is applied to an upper electrode 48 (or lower electrode 16) from a third high frequency power supply 66, and two high frequency powers RFL1 (0.8 MHz) and RFL2 (13 MHz) suitable for attracting ions are applied to the susceptor 16 from first and second high frequency power supplies 36 and 38, respectively, in order to control energy of ions incident onto a semiconductor wafer W from the plasma. A control unit 88 controls a total power and a power ratio of the first and second high frequency powers RFL1 and RFL2 depending on specifications, conditions or recipes of an etching process.
摘要翻译：提供了一种能够通过有效地控制RF偏置功能来响应于微处理的各种要求来优化等离子体处理的等离子体处理装置。在该等离子体处理装置中，适用于产生电容耦合型等离子体的高频功率RFH从第三高频电源66施加到上电极48（或下电极16），并且将两个高频功率RFL1（0.8 MHz）和适合于吸引离子的RFL2（13MHz）分别从第一和第二高频电源36和38施加到基座16，以便控制从等离子体入射到半导体晶片W上的离子的能量。控制单元88根据蚀刻处理的规格，条件或配方来控制第一和第二高频功率RFL1和RFL2的总功率和功率比。

2. 发明申请

US20120214313A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20120214313A1
公开(公告)日：2012-08-23
申请号：US13214372
申请日：2011-08-22
申请人： Yoshinobu Ooya , Akira Tanabe , Yoshinori Yasuta
发明人： Yoshinobu Ooya , Akira Tanabe , Yoshinori Yasuta
IPC分类号： H01L21/3065 , H01L21/02
CPC分类号： H01J37/02 , H01J37/32091 , H01J37/32165 , H01J2237/3348
摘要： There is provided a plasma processing apparatus capable of optimizing a plasma process in response to various requirements of a micro processing by effectively controlling a RF bias function. In this plasma processing apparatus, a high frequency power RFH suitable for generating plasma of a capacitively coupling type is applied to an upper electrode 48 (or lower electrode 16) from a third high frequency power supply 66, and two high frequency powers RFL1 (0.8 MHz) and RFL2 (13 MHz) suitable for attracting ions are applied to the susceptor 16 from first and second high frequency power supplies 36 and 38, respectively, in order to control energy of ions incident onto a semiconductor wafer W from the plasma. A control unit 88 controls a total power and a power ratio of the first and second high frequency powers RFL1 and RFL2 depending on specifications, conditions or recipes of an etching process.
摘要翻译：提供了一种能够通过有效地控制RF偏置功能来响应于微处理的各种要求来优化等离子体处理的等离子体处理装置。在该等离子体处理装置中，适用于产生电容耦合型等离子体的高频功率RFH从第三高频电源66施加到上电极48（或下电极16），并且将两个高频功率RFL1（0.8 MHz）和适合于吸引离子的RFL2（13MHz）分别从第一和第二高频电源36和38施加到基座16，以便控制从等离子体入射到半导体晶片W上的离子的能量。控制单元88根据蚀刻处理的规格，条件或配方来控制第一和第二高频功率RFL1和RFL2的总功率和功率比。

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