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1. 发明授权

US5585309A Method of making semiconductor laser 失效
标题翻译：制造半导体激光器的方法
公开(公告)号：US5585309A
公开(公告)日：1996-12-17
申请号：US327841
申请日：1994-10-17
申请人： Kenzo Mori , Tadashi Kimura , Yoshitatu Kawama , Nobuaki Kaneno , Tatuya Kimura , Yuji Okura , Hitoshi Tada
发明人： Kenzo Mori , Tadashi Kimura , Yoshitatu Kawama , Nobuaki Kaneno , Tatuya Kimura , Yuji Okura , Hitoshi Tada
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01L21/20
CPC分类号： H01S5/227 , H01S5/2059 , H01S5/2081 , H01S5/209 , H01S5/2201 , H01S5/2205 , H01S5/2206 , H01S5/2272 , H01S5/2275 , H01S5/32391 , Y10S148/095
摘要： A method for fabricating a semiconductor laser includes forming a double heterojunction structure on a first conductivity type semiconductor substrate; forming the double heterojunction structure into a stripe mesa shape by selective etching; successively growing a first conductivity type layer, a second conductivity type current blocking layer, and a first conductivity type current blocking layer on opposite sides of the mesa to embed the mesa; and adding an impurity from a surface of the first conductivity type current blocking layer to form impurity doped regions that electrically separate the second conductivity type current blocking layer from an upper part of the mesa at opposite sides of the mesa.
摘要翻译：一种制造半导体激光器的方法包括在第一导电型半导体衬底上形成双异质结结构; 通过选择性蚀刻将双异质结结构形成条状台面形状; 在台面的相对侧依次生长第一导电型层，第二导电型电流阻挡层和第一导电型电流阻挡层，以嵌入台面; 以及从所述第一导电型电流阻挡层的表面添加杂质，以形成将所述第二导电型电流阻挡层与所述台面的相对侧的所述台面的上部电分离的杂质掺杂区域。

2. 发明授权

US5390205A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5390205A
公开(公告)日：1995-02-14
申请号：US58366
申请日：1993-05-10
申请人： Kenzo Mori , Tadashi Kimura , Yoshitatu Kawama , Nobuaki Kaneno , Tatuya Kimura , Yuji Okura , Hitoshi Tada
发明人： Kenzo Mori , Tadashi Kimura , Yoshitatu Kawama , Nobuaki Kaneno , Tatuya Kimura , Yuji Okura , Hitoshi Tada
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2059 , H01S5/2081 , H01S5/209 , H01S5/2201 , H01S5/2205 , H01S5/2206 , H01S5/2272 , H01S5/2275 , H01S5/32391 , Y10S148/095
摘要： A semiconductor laser includes a first conductivity type semiconductor substrate; a double-heterojunction structure including a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer successively disposed on the semiconductor substrate; two parallel stripe grooves forming the double-heterojunction structure in a mesa shape; a first conductivity type mesa embedding layer, a second conductivity type current blocking layer, and a first conductivity type current blocking layer successively disposed on the semiconductor substrate and contacting opposite sides of the mesa; and impurity doped regions formed by adding an impurity through the surface of the first conductivity type current blocking layer. The impurity doped regions electrically separate an upper part of the mesa from the second conductivity type current blocking layer at opposite sides of the mesa. Since the second conductivity type current blocking layer is not in contact with the mesa structure, no leakage current path is formed in the laser structure.
摘要翻译：半导体激光器包括第一导电型半导体衬底; 包括依次设置在所述半导体衬底上的第一导电型包覆层，有源层和第二导电型包层的双异质结结构; 两个平行的条纹槽形成台状形状的双异质结结构; 依次设置在半导体衬底上并接触台面相对两侧的第一导电型台面埋置层，第二导电型电流阻挡层和第一导电型电流阻挡层; 以及通过在第一导电型电流阻挡层的表面添加杂质而形成的杂质掺杂区域。杂质掺杂区域在台面的相对侧将台面的上部与第二导电型电流阻挡层电隔离。由于第二导电型电流阻挡层不与台面结构接触，所以在激光器结构中不形成漏电流路径。

3. 发明授权

US5316967A Method for producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5316967A
公开(公告)日：1994-05-31
申请号：US975109
申请日：1992-11-12
申请人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
发明人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
IPC分类号： H01L21/20 , H01L21/308 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/323
CPC分类号： H01L21/3081 , H01L21/02392 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S2304/04 , H01S5/2081 , H01S5/2277 , H01S5/32325
摘要： In a method for producing a semiconductor device, a first semiconductor layer is epitaxially grown on a semiconductor substrate, an insulating film pattern is formed on the first semiconductor layer, and portions of the first semiconductor layer are removed by wet etching using the insulating film pattern as a mask to leave a ridge having a reverse mesa shape and a width. Ends of the insulating film pattern are removed by etching to approximately the width of the ridge, a second semiconductor layer is epitaxially grown on opposite sides of the ridge, and a third semiconductor layer is epitaxially grown on the ridge and the second semiconductor layer. The second semiconductor layer is evenly grown without concave portions at opposite sides of the ridge. In addition, the third semiconductor layer is evenly grown on the ridge and the second semiconductor layer, and an electrode reliably connects the surface of the third semiconductor layer. A semiconductor device with good performance and high reliability is reproducibly manufactured.
摘要翻译：在制造半导体器件的方法中，在半导体衬底上外延生长第一半导体层，在第一半导体层上形成绝缘膜图案，并且通过使用绝缘膜图案的湿蚀刻去除第一半导体层的部分作为掩模，离开具有反台面形状和宽度的脊。绝缘膜图案的端部通过蚀刻到脊的宽度去除，在脊的相对侧上外延生长第二半导体层，并且在脊和第二半导体层上外延生长第三半导体层。第二半导体层在脊的相对侧均匀生长而没有凹部。此外，第三半导体层均匀地生长在脊和第二半导体层上，并且电极可靠地连接第三半导体层的表面。可重复地制造具有良好性能和高可靠性的半导体器件。

4. 发明授权

US5426658A Semiconductor laser including ridge confining buffer layer 失效
标题翻译：半导体激光器包括脊限制缓冲层
公开(公告)号：US5426658A
公开(公告)日：1995-06-20
申请号：US200483
申请日：1994-02-23
申请人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
发明人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
IPC分类号： H01L21/20 , H01L21/308 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/323 , H01S3/19
CPC分类号： H01L21/3081 , H01L21/02392 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S2304/04 , H01S5/2081 , H01S5/2277 , H01S5/32325
摘要： A semiconductor laser device including a semiconductor substrate; a plurality of semiconductor layers including an AlGaAs layer epitaxially grown on said semiconductor substrate; a ridge having a reverse mesa shape and opposed sides formed of said plurality of semiconductor layers; an Al.sub.x Ga.sub.1-x As low temperature buffer layer (0.ltoreq..times..ltoreq.1) disposed on said AlGaAs layer at opposite sides of said ridge; a first semiconductor layer epitaxially disposed on said low temperature buffer layer at opposite sides of said ridge; and a second semiconductor layer epitaxially disposed on said ridge and said first semiconductor layer.
摘要翻译：一种半导体激光器件，包括半导体衬底; 包括在所述半导体衬底上外延生长的AlGaAs层的多个半导体层; 具有反台面形状的脊和由所述多个半导体层形成的相对侧; 在所述脊的相对侧设置在所述AlGaAs层上的Al x Ga 1-x As低温缓冲层（0≤x≤1）在所述脊的相对侧外延地设置在所述低温缓冲层上的第一半导体层; 以及外延地设置在所述脊和所述第一半导体层上的第二半导体层。

5. 发明授权

US5782979A Substrate holder for MOCVD 失效
标题翻译： MOCVD基板支架
公开(公告)号：US5782979A
公开(公告)日：1998-07-21
申请号：US489773
申请日：1995-06-13
申请人： Nobuaki Kaneno , Hirotaka Kizuki , Masayoshi Takemi , Kenzo Mori
发明人： Nobuaki Kaneno , Hirotaka Kizuki , Masayoshi Takemi , Kenzo Mori
IPC分类号： H01L21/205 , C23C16/30 , C23C16/458 , C30B25/02 , C30B25/12 , H01L21/683 , H01S5/00 , C23C16/00
CPC分类号： C30B25/02 , C23C16/301 , C23C16/4581 , C30B25/12 , C30B29/40
摘要： A substrate holder employed for MOCVD and supporting a wafer on which crystal growth proceeds includes a molybdenum holder body, a GaAs polycrystalline film with a flat surface grown on a part of the surface of the molybdenum holder body where the wafer is absent, and an InP polycrystalline film grown on the GaAs polycrystalline film. Each of the polycrystalline films is grown to a thickness of 0.3 .mu.m or more at a temperature higher than the epitaxial growth temperature of 575.degree. C. During the MOCVD process, the emissivity of the molybdenum substrate holder is stable at a value near the emissivity of the wafer on the substrate holder and, therefore, the decomposition ratio of PH.sub.3 gas on the substrate holder is stable at a value near the decomposition ratio on the wafer, whereby any variation of the incorporation ratio of P atoms in the grown InGaAsP, i.e., a variation of the composition of the InGaAsP, is reduced and run-to-run variations of the composition of the grown crystal are reduced.
摘要翻译：用于MOCVD并支撑晶体生长所进行的晶片的衬底保持器包括钼保持器主体，在不存在晶片的钼保持器主体的表面的一部分上生长的具有平坦表面的GaAs多晶膜，以及InP 在GaAs多晶膜上生长的多晶膜。在比575℃的外延生长温度高的温度下，将多晶膜生长至0.3μm以上的厚度。在MOCVD工艺中，钼基板保持器的发射率在发射率附近稳定因此衬底保持器上的PH3气体的分解比例在晶片分解比附近稳定，因此生长的InGaAsP中P原子的掺入比例，即，InGaAsP的组成的变化减小，并且生长晶体的组成的运行变化减小。

6. 发明授权

US5173913A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5173913A
公开(公告)日：1992-12-22
申请号：US719036
申请日：1991-06-21
申请人： Nobuaki Kaneno
发明人： Nobuaki Kaneno
IPC分类号： H01S5/00 , H01S5/223 , H01S5/24
CPC分类号： H01S5/2232 , H01S5/2234 , H01S5/2237 , H01S5/24
摘要： A semiconductor laser having a double heterojunction structure includes a first semiconductor cladding layer having a stripe-shaped groove, a semiconductor active layer disposed on the cladding layer and having an energy band gap narrower than that of the cladding layer, and a second semiconductor cladding layer disposed on the active layer and having an energy band gap wider than that of the active layer. The thickness of the active layer in the groove is larger than the thickness of the active layer outside the groove and the shape of the active layer has the shape of the groove. The thickness of the active layer is largest in the bottom of the groove and gradually becomes smaller toward the edges of the groove. The semiconductor laser can output a laser beam having nearly a circular cross-section at a low threshold current and is easily fabricated.
摘要翻译：具有双异质结结构的半导体激光器包括具有条形槽的第一半导体包覆层，设置在包层上的半导体有源层，具有比包层更窄的能带隙，以及第二半导体包覆层设置在有源层上并且具有比有源层宽的能带隙。沟槽中有源层的厚度大于沟槽外的有源层的厚度，有源层的形状具有沟槽的形状。有源层的厚度在槽的底部最大，并且朝向槽的边缘逐渐变小。半导体激光器可以以低阈值电流输出具有近似圆形横截面的激光束并且容易地制造。

7. 发明授权

US5496408A Apparatus for producing compound semiconductor devices 失效
标题翻译：用于生产化合物半导体器件的装置
公开(公告)号：US5496408A
公开(公告)日：1996-03-05
申请号：US131529
申请日：1993-10-04
申请人： Takashi Motoda , Shoichi Karakida , Nobuaki Kaneno , Shigeki Kageyama
发明人： Takashi Motoda , Shoichi Karakida , Nobuaki Kaneno , Shigeki Kageyama
IPC分类号： C30B35/00 , C23C16/448 , C30B25/14 , H01L21/205 , H01L21/365 , C23C16/00
CPC分类号： C23C16/45561 , C23C16/4481 , C23C16/4482 , C23C16/4485 , C30B25/14 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262
摘要： An apparatus for producing a compound semiconductor layer includes a first flow rate controller for adjusting flow rates of respective material source gases, a gas mixing pipe for mixing the respective material source gases, gas distributing pipes for distributing gases and connected to the gas mixing pipe, a second flow rate controller for adjusting flow rates of the material source gases flowing through the gas distributing pipes and for supplying the material source gases to a reaction tube, a pressure detector for detecting pressure in the gas mixing pipe, and a third controller responsive to the pressure detector for controlling the second flow rate controller to maintain a constant pressure in the gas mixing pipe. Retardation of the gases between the first and second flow rate controllers is avoided, improving thickness uniformity in grown layers.
摘要翻译：一种化合物半导体层的制造装置，具备调整各个原料气体的流量的第一流量控制装置，混合各原料气体的气体混合管，分配气体的气体分配管，与气体混合管连接，第二流量控制器，用于调节流过气体分配管的材料源气体的流量和用于将材料源气体供应到反应管的流量;用于检测气体混合管中的压力的压力检测器，以及响应于用于控制第二流量控制器以保持气体混合管中的恒定压力的压力检测器。避免了第一和第二流速控制器之间的气体的延迟，从而改善了生长层中的厚度均匀性。

8. 发明授权

US4771433A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4771433A
公开(公告)日：1988-09-13
申请号：US943931
申请日：1986-12-19
申请人： Nobuaki Kaneno , Kenji Ikeda
发明人： Nobuaki Kaneno , Kenji Ikeda
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/20 , H01S5/2231 , H01S5/2235 , H01S5/2237
摘要： A semiconductor laser device which includes a semiconductor substrate; a semiconductor active layer; a semiconductor waveguiding layer provided adjacent to the active layer having a larger energy band gap than that of the active layer; a first and a second semiconductor cladding layer provided such that the semiconductor waveguiding layer and the active layer are positioned between by the two cladding layers, which cladding layers have larger energy band gaps than that of the waveguiding layer; and a periodic refractive index distribution being provided in a direction parallel with the active layer inside a waveguide produced by the refractive index differences produced at the above-mentioned four layers.
摘要翻译：一种半导体激光器件，包括半导体衬底; 半导体活性层; 与有源层相邻设置的具有比有源层更大的能带隙的半导体波导层; 第一和第二半导体包层，其被设置为使得半导体波导层和有源层位于两个包层之间，该包层具有比波导层更大的能带隙; 并且在与由上述四层产生的折射率差产生的波导内部的有源层平行的方向上设置周期性的折射率分布。

9. 发明授权

US4591464A Method and apparatus for evaporating a liquid organic metal 失效
标题翻译：蒸发液体有机金属的方法和装置
公开(公告)号：US4591464A
公开(公告)日：1986-05-27
申请号：US671987
申请日：1984-11-15
申请人： Nobuaki Kaneno , Kazuhisa Takahashi
发明人： Nobuaki Kaneno , Kazuhisa Takahashi
IPC分类号： B01D1/14 , B01J7/02 , C23C16/448 , H01L21/205 , B01F3/04
CPC分类号： B01D1/14 , C23C16/4482
摘要： A bubbling evaporator comprises: a vessel (11); a partition plate (11a) for dividing the vessel (11) into an upper chamber (11b) for temporarily storing carrier gas and a lower chamber (11c) for containing liquid (2); an inlet pipe (12 or 14) for making the carrier gas blow from the upper chamber (11b) into the liquid (2) in the lower chamber (11c) through the partition plate (11a) to bubble and evaporate the liquid (2); and an outlet pipe (13) for leading the evaporated vapor together with the carrier gas to the exterior of the vessel (11). Thus, backflow of the liquid (2) to the exterior of the vessel (11) can be prevented and stable pressure of the evaporated vapor can be obtained. A method of evaporating a liquid organic metal to be used in a vapor deposition process for manufacturing semiconductor devices and the like is also disclosed.
摘要翻译：鼓泡蒸发器包括：容器（11）; 用于将容器（11）分成用于临时储存载气的上室（11b）和用于容纳液体（2）的下室（11c））的隔板（11a）用于使载气从上室（11b）通过分隔板（11a）吹入下室（11c）中的液体（2）中的入口管（12或14）气泡并蒸发液体（2） ; 以及用于将蒸发的蒸气与载气一起引导到容器（11）的外部的出口管（13）。因此，可以防止液体（2）回流到容器（11）的外部，并且可以获得稳定的蒸发蒸汽的压力。还公开了一种蒸发用于制造半导体器件等的气相沉积工艺中的液体有机金属的方法。

10. 发明授权

US5192711A Method for producing a semiconductor laser device 失效
标题翻译：半导体激光装置的制造方法
公开(公告)号：US5192711A
公开(公告)日：1993-03-09
申请号：US822662
申请日：1992-01-21
申请人： Takashi Murakami , Nobuaki Kaneno
发明人： Takashi Murakami , Nobuaki Kaneno
IPC分类号： H01S5/042 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/0421 , H01S5/2231 , H01S5/321 , H01S5/32325 , Y10S438/936
摘要： A visible light semiconductor laser device has a double heterojunction structure comprising AlGaInP series semiconductors which is produced on a substrate having an electrode on its rear surface. A a p type GaInP buffer layer is provided between a p type GaAs contact layer and a p type AlGaInP cladding layer. The buffer layer has a constant composition ratio and the energy band gap is smaller at the side of the p type GaAs contact layer than at the p type AlGaInP cladding layer. Thus, an energy band discontinuity between the p type GaAs contact layer and the p type AlGaInP cladding layer are relaxed for operation of the laser at low voltage. The laser is produced by varying the growth conditions, such as temperature or V/III ratio during growth, of the buffer layer to vary the energy band gap within the buffer layer.
摘要翻译：可见光半导体激光器件具有包含AlGaInP系列半导体的双异质结结构，其在其后表面上具有电极的基板上制造。在p型GaAs接触层和p型AlGaInP包层之间设置p型GaInP缓冲层。缓冲层具有恒定的组成比，并且p型GaAs接触层侧的能带隙比在p型AlGaInP包覆层处的能带隙更小。因此，p型GaAs接触层和p型AlGaInP包层之间的能带不连续性被放宽，以在低电压下操作激光器。通过改变缓冲层中的生长条件，例如生长期间的温度或V / III比，来产生激光，以改变缓冲层内的能带隙。

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