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1. 发明授权

US5426658A Semiconductor laser including ridge confining buffer layer 失效
标题翻译：半导体激光器包括脊限制缓冲层
公开(公告)号：US5426658A
公开(公告)日：1995-06-20
申请号：US200483
申请日：1994-02-23
申请人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
发明人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
IPC分类号： H01L21/20 , H01L21/308 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/323 , H01S3/19
CPC分类号： H01L21/3081 , H01L21/02392 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S2304/04 , H01S5/2081 , H01S5/2277 , H01S5/32325
摘要： A semiconductor laser device including a semiconductor substrate; a plurality of semiconductor layers including an AlGaAs layer epitaxially grown on said semiconductor substrate; a ridge having a reverse mesa shape and opposed sides formed of said plurality of semiconductor layers; an Al.sub.x Ga.sub.1-x As low temperature buffer layer (0.ltoreq..times..ltoreq.1) disposed on said AlGaAs layer at opposite sides of said ridge; a first semiconductor layer epitaxially disposed on said low temperature buffer layer at opposite sides of said ridge; and a second semiconductor layer epitaxially disposed on said ridge and said first semiconductor layer.
摘要翻译：一种半导体激光器件，包括半导体衬底; 包括在所述半导体衬底上外延生长的AlGaAs层的多个半导体层; 具有反台面形状的脊和由所述多个半导体层形成的相对侧; 在所述脊的相对侧设置在所述AlGaAs层上的Al x Ga 1-x As低温缓冲层（0≤x≤1）在所述脊的相对侧外延地设置在所述低温缓冲层上的第一半导体层; 以及外延地设置在所述脊和所述第一半导体层上的第二半导体层。

2. 发明授权

US5316967A Method for producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5316967A
公开(公告)日：1994-05-31
申请号：US975109
申请日：1992-11-12
申请人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
发明人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
IPC分类号： H01L21/20 , H01L21/308 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/323
CPC分类号： H01L21/3081 , H01L21/02392 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S2304/04 , H01S5/2081 , H01S5/2277 , H01S5/32325
摘要： In a method for producing a semiconductor device, a first semiconductor layer is epitaxially grown on a semiconductor substrate, an insulating film pattern is formed on the first semiconductor layer, and portions of the first semiconductor layer are removed by wet etching using the insulating film pattern as a mask to leave a ridge having a reverse mesa shape and a width. Ends of the insulating film pattern are removed by etching to approximately the width of the ridge, a second semiconductor layer is epitaxially grown on opposite sides of the ridge, and a third semiconductor layer is epitaxially grown on the ridge and the second semiconductor layer. The second semiconductor layer is evenly grown without concave portions at opposite sides of the ridge. In addition, the third semiconductor layer is evenly grown on the ridge and the second semiconductor layer, and an electrode reliably connects the surface of the third semiconductor layer. A semiconductor device with good performance and high reliability is reproducibly manufactured.
摘要翻译：在制造半导体器件的方法中，在半导体衬底上外延生长第一半导体层，在第一半导体层上形成绝缘膜图案，并且通过使用绝缘膜图案的湿蚀刻去除第一半导体层的部分作为掩模，离开具有反台面形状和宽度的脊。绝缘膜图案的端部通过蚀刻到脊的宽度去除，在脊的相对侧上外延生长第二半导体层，并且在脊和第二半导体层上外延生长第三半导体层。第二半导体层在脊的相对侧均匀生长而没有凹部。此外，第三半导体层均匀地生长在脊和第二半导体层上，并且电极可靠地连接第三半导体层的表面。可重复地制造具有良好性能和高可靠性的半导体器件。

3. 发明授权

US5782979A Substrate holder for MOCVD 失效
标题翻译： MOCVD基板支架
公开(公告)号：US5782979A
公开(公告)日：1998-07-21
申请号：US489773
申请日：1995-06-13
申请人： Nobuaki Kaneno , Hirotaka Kizuki , Masayoshi Takemi , Kenzo Mori
发明人： Nobuaki Kaneno , Hirotaka Kizuki , Masayoshi Takemi , Kenzo Mori
IPC分类号： H01L21/205 , C23C16/30 , C23C16/458 , C30B25/02 , C30B25/12 , H01L21/683 , H01S5/00 , C23C16/00
CPC分类号： C30B25/02 , C23C16/301 , C23C16/4581 , C30B25/12 , C30B29/40
摘要： A substrate holder employed for MOCVD and supporting a wafer on which crystal growth proceeds includes a molybdenum holder body, a GaAs polycrystalline film with a flat surface grown on a part of the surface of the molybdenum holder body where the wafer is absent, and an InP polycrystalline film grown on the GaAs polycrystalline film. Each of the polycrystalline films is grown to a thickness of 0.3 .mu.m or more at a temperature higher than the epitaxial growth temperature of 575.degree. C. During the MOCVD process, the emissivity of the molybdenum substrate holder is stable at a value near the emissivity of the wafer on the substrate holder and, therefore, the decomposition ratio of PH.sub.3 gas on the substrate holder is stable at a value near the decomposition ratio on the wafer, whereby any variation of the incorporation ratio of P atoms in the grown InGaAsP, i.e., a variation of the composition of the InGaAsP, is reduced and run-to-run variations of the composition of the grown crystal are reduced.
摘要翻译：用于MOCVD并支撑晶体生长所进行的晶片的衬底保持器包括钼保持器主体，在不存在晶片的钼保持器主体的表面的一部分上生长的具有平坦表面的GaAs多晶膜，以及InP 在GaAs多晶膜上生长的多晶膜。在比575℃的外延生长温度高的温度下，将多晶膜生长至0.3μm以上的厚度。在MOCVD工艺中，钼基板保持器的发射率在发射率附近稳定因此衬底保持器上的PH3气体的分解比例在晶片分解比附近稳定，因此生长的InGaAsP中P原子的掺入比例，即，InGaAsP的组成的变化减小，并且生长晶体的组成的运行变化减小。

4. 发明授权

US5602414A Infrared detector having active regions and isolating regions formed of CdHgTe 失效
标题翻译：具有活性区域和由CdHgTe形成的隔离区域的红外探测器
公开(公告)号：US5602414A
公开(公告)日：1997-02-11
申请号：US260791
申请日：1994-06-16
申请人： Kotaro Mitsui , Zenpei Kawazu , Kazuo Mizuguchi , Seiji Ochi , Yuji Ohkura , Norio Hayafuji , Hirotaka Kizuki , Mari Tsugami , Akihiro Takami , Manabu Katoh
发明人： Kotaro Mitsui , Zenpei Kawazu , Kazuo Mizuguchi , Seiji Ochi , Yuji Ohkura , Norio Hayafuji , Hirotaka Kizuki , Mari Tsugami , Akihiro Takami , Manabu Katoh
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H01L31/00
CPC分类号： H01L27/14649
摘要： In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.
摘要翻译：在红外线检测器的制造方法中，首先，在半导体基板的正面形成有与第一导电型相反的多个第二导电类型的间隔开的CdHgTe区域的第一导电型CdHgTe层，在第一导电型CdHgTe层的表面产生，并且第二导电型CdHgTe区域之间的第一导电类型CdHgTe层的表面的一部分被带电粒子束选择性地照射，以从该部分蒸发Hg原子，由此CdHgTe 产生具有比第一导电型CdHgTe层的Cd组分大的第一导电类型的分离区，穿过第一导电型CdHgTe层并围绕每个第二导电型CdHgTe区。因此，实现了在像素之间没有串扰的高度集成的高分辨率红外检测器。

5. 发明授权

US06358316B1 Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure 失效
标题翻译：半导体装置的制造方法，半导体激光装置的制造方法以及量子线结构的制造方法
公开(公告)号：US06358316B1
公开(公告)日：2002-03-19
申请号：US08513036
申请日：1995-08-09
申请人： Hirotaka Kizuki , Norio Hayafuji , Tatsuya Kimura
发明人： Hirotaka Kizuki , Norio Hayafuji , Tatsuya Kimura
IPC分类号： C30B2504
CPC分类号： B82Y20/00 , B82Y10/00 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/30621 , H01L21/3081 , H01L21/314 , H01L29/66469 , H01S5/2081 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3203 , H01S5/32308 , H01S5/341 , H01S5/3432 , H01S5/4031 , H01S5/4043
摘要： In a method for producing a semiconductor device, a compound semiconductor cap layer including no aluminum is grown on a compound semiconductor layer including aluminum, a mask pattern insulating film is formed on a part of the compound semiconductor cap layer, the compound semiconductor wafer with the insulating mask pattern is immersed in an ammonium sulfide solution, the compound semiconductor wafer is selectively etched away using a chlorine containing gas in a reaction chamber, and a groove formed in the etching process is filled with a compound semiconductor layer grown in the reaction chamber by MOCVD. Therefore, a regrowth interface on which no impurity is segregated is attained, improving the quality of the regrown crystal layer.
摘要翻译：在半导体装置的制造方法中，在包含铝的化合物半导体层上生长不含铝的化合物半导体盖层，在化合物半导体盖层的一部分上形成有掩模图案绝缘膜，具有将绝缘掩模图案浸入硫化铵溶液中，在反应室中使用含氯气体选择性地蚀刻掉化合物半导体晶片，并且在蚀刻工艺中形成的凹槽中填充在反应室中生长的化合物半导体层， MOCVD。因此，可以获得没有杂质分离的再生界面，提高再结晶层的质量。

6. 发明授权

US5796127A High electron mobility transistor 失效
标题翻译：高电子迁移率晶体管
公开(公告)号：US5796127A
公开(公告)日：1998-08-18
申请号：US915791
申请日：1997-08-21
申请人： Norio Hayafuji , Yoshitsugu Yamamoto , Hirotaka Kizuki
发明人： Norio Hayafuji , Yoshitsugu Yamamoto , Hirotaka Kizuki
IPC分类号： H01L29/812 , H01L21/203 , H01L21/314 , H01L21/324 , H01L21/335 , H01L21/338 , H01L23/31 , H01L29/36 , H01L29/778 , H01L29/201 , H01L29/737
CPC分类号： H01L29/66462 , H01L21/314 , H01L21/3245 , H01L23/3185 , H01L29/365 , H01L2924/0002
摘要： A method of fabricating a semiconductor device includes forming a first mixed crystal semiconductor layer of AlAs and InAs; applying a solution containing a material easily combining with fluorine to the surface of the first mixed crystal semiconductor layer exposed to the atmosphere so that the material combines with fluorine that sticks to the surface of the first mixed crystal semiconductor layer; and annealing the first mixed crystal semiconductor layer in a vacuum. In this method, since the fluorine on the surface of the first mixed crystal semiconductor layer exposed to the atmosphere combines with the material included in the solution and is removed together with the material, a first mixed crystal semiconductor layer having no fluorine is produced. Therefore, unwanted infiltration of fluorine into the first mixed crystal semiconductor layer is avoided, resulting in a highly reliable semiconductor device with desired characteristics.
摘要翻译：制造半导体器件的方法包括：形成AlAs和InAs的第一混晶半导体层; 将含有容易与氟结合的材料的溶液施加到暴露于大气的第一混晶半导体层的表面，使得该材料与粘附在第一混晶半导体层表面的氟结合; 以及在真空中退火所述第一混晶半导体层。在该方法中，由于暴露于大气中的第一混晶半导体层的表面上的氟与包含在溶液中的材料结合，与材料一起被除去，因此产生不含氟的第一混晶半导体层。因此，避免了氟进入第一混晶半导体层的不必要的渗入，导致具有所需特性的高度可靠的半导体器件。

7. 发明授权

US5805628A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5805628A
公开(公告)日：1998-09-08
申请号：US735637
申请日：1996-10-23
申请人： Shoichi Karakida , Norio Hayafuji , Tatsuya Kimura , Motoharu Miyashita , Hirotaka Kizuki , Takashi Nishimura
发明人： Shoichi Karakida , Norio Hayafuji , Tatsuya Kimura , Motoharu Miyashita , Hirotaka Kizuki , Takashi Nishimura
IPC分类号： H01S5/00 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/16 , H01S5/2231 , H01S5/1064 , H01S5/2077 , H01S5/3432
摘要： A semiconductor laser device includes a semiconductor substrate of a first conductivity type; opposed light emitting facets; a double heterojunction structure disposed on the semiconductor substrate and including an optical waveguide that extends between the facets and comprises a light emitting region and a lens region, the lens region being between the light emitting region and one of the facets, the double heterojunction structure including a plurality of AlGaAs series compound semiconductor layers which are thicker in the light emitting region than in the lens region; and a current blocking structure disposed on both sides of the double heterojunction structure and including a lower AlGaAs series compound semiconductor layer of the first conductivity type, an intermediate AlGaAs series compound semiconductor layer of a second conductivity type, opposite the first conductivity type, and an upper AlGaAs series compound semiconductor layer of the first conductivity type. Therefore, a reactive current that does not contribute to laser oscillation is prevented from flowing through the current blocking structure.
摘要翻译：半导体激光器件包括第一导电类型的半导体衬底; 相对的发光面; 双异质结结构，其设置在所述半导体衬底上，并且包括在所述面之间延伸并且包括发光区域和透镜区域的光波导，所述透镜区域在所述发光区域和所述面之一之间，所述双异质结结构包括多个AlGaAs系化合物半导体层，其在发光区域比透镜区域厚; 以及设置在双异质结结构的两侧上的电流阻挡结构，并且包括第一导电类型的下AlGaAs系化合物半导体层，与第一导电类型相反的第二导电类型的中间AlGaAs系化合物半导体层和第一导电类型的上AlGaAs系化合物半导体层。因此，防止无助于激光振荡的无功电流流过电流阻挡结构。

8. 发明授权

US5389798A High-speed semiconductor device with graded collector barrier 失效
标题翻译：高速半导体器件具有分级集电极屏障
公开(公告)号：US5389798A
公开(公告)日：1995-02-14
申请号：US955275
申请日：1992-10-01
申请人： Seiji Ochi , Hirotaka Kizuki
发明人： Seiji Ochi , Hirotaka Kizuki
IPC分类号： H01L29/205 , H01L29/68 , H01L29/737 , H01L29/76 , H01L29/72
CPC分类号： B82Y10/00 , H01L29/7376 , H01L29/7606 , Y10S977/761 , Y10S977/936
摘要： A high-speed semiconductor device includes an emitter layer serving as an injection source of hot electrons and a collector barrier layer disposed between a base layer and a collector layer. The potential profile of the collector barrier layer gradually varies from a region in the vicinity of the boundary between the base layer and the collector barrier layer whereby reflection of electrons at the collector barrier layer is significantly reduced. Therefore, current density in the ON state of the device is increased without damaging the high speed characteristics of the device, and current density in the OFF state of the device is decreased, resulting in a high-performance and high-speed semiconductor device.
摘要翻译：高速半导体器件包括用作热电子注入源的发射极层和设置在基极层和集电极层之间的集电极势垒层。集电极势垒层的电位分布从基极层与集电极阻挡层之间的边界附近的区域逐渐变化，由此电子在集电极阻挡层的反射显着降低。因此，器件的ON状态下的电流密度增加而不损害器件的高速特性，并且器件的OFF状态下的电流密度降低，导致高性能和高速半导体器件。

9. 发明授权

US5948161A Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface 失效
标题翻译：制造半导体器件的方法和清洁晶体半导体表面的方法
公开(公告)号：US5948161A
公开(公告)日：1999-09-07
申请号：US409730
申请日：1995-03-24
申请人： Hirotaka Kizuki
发明人： Hirotaka Kizuki
IPC分类号： H01L29/73 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/331 , H01L29/205 , H01L29/737 , H01S5/00 , C30B25/18
CPC分类号： H01L21/02046 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/0262
摘要： In fabricating a semiconductor device, a semiconductor layer containing Al and a cap layer not containing Al are successively grown on a semiconductor substrate and are placed in a halogen gas environment where a chemical reaction between a halogen and an oxide film naturally formed on the cap layer removes the oxide film. Then, without exposing the layer to the atmosphere, the halogen gas environment is replaced with a dry-etching environment and the cap layer is dry-etched to a desired depth. Then, without exposing a semiconductor layer to the atmosphere, the dry-etching environment is replaced with a crystal growth environment. Subsequently, another semiconductor layer is grown on the semiconductor layer. A regrowth interface of excellent cleanliness is realized and the crystallinity of the regrown semiconductor layer is improved.
摘要翻译：在制造半导体器件时，含有Al的半导体层和不含有Al的帽层依次生长在半导体衬底上，并且被置于卤素气体环境中，卤素和天然形成在覆盖层上的氧化物膜之间发生化学反应去除氧化膜。然后，在不将该层暴露于大气中的情况下，用干蚀刻环境代替卤素气体环境，并将盖层干蚀刻至期望的深度。然后，不将半导体层暴露在大气中，干蚀刻环境被晶体生长环境所代替。随后，在半导体层上生长另一半导体层。实现了优异清洁度的再生界面，提高了再生长半导体层的结晶度。

10. 发明授权

US5835516A Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US5835516A
公开(公告)日：1998-11-10
申请号：US569881
申请日：1995-12-08
申请人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
发明人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
IPC分类号： H01L21/306 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19 , H01L21/20
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/221 , H01S5/32316
摘要： A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and forming a buffer layer comprising Al.sub.x Ga.sub.1-x As having an Al composition ratio x of 0 to 0.3 on a surface of the upper cladding layers exposed by the etching and forming a current blocking layer of first conductivity type Al.sub.y Ga.sub.1-y As having an Al composition ratio y of at least 0.5 on the buffer layer to bury portions of the upper cladding layers which are not removed by the etching process. Therefore, since the layer grown on the upper cladding layer exposed by etching of AlGaAs or GaAs having a low Al composition ratio (0-0.3), three-dimensional growth of and crystalline defects in the buffer layer are suppressed. Current leakage is suppressed, so that a semiconductor laser device having a low threshold current and a high efficiency is fabricated with a stable yield.
摘要翻译：一种制造半导体激光器件的方法包括：在下包层上连续形成有源层和上覆层，蚀刻除去电流流过的上覆层的区域以外的部分，形成条状脊结构，以及在通过蚀刻暴露的上覆层的表面上形成包含Al组成比x为0至0.3的Al x Ga 1-x As的缓冲层，并形成具有Al组成比y的第一导电型AlyGa1-yAs的电流阻挡层在缓冲层上至少为0.5以掩埋未被蚀刻工艺除去的上覆层的部分。因此，由于通过蚀刻Al AlAs或Al组成比低（0-0.3）的GaAs而暴露在上包层上的层，抑制了缓冲层的三维生长和晶体缺陷。电流泄漏被抑制，从而以稳定的产量制造具有低阈值电流和高效率的半导体激光器件。

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