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    • 3. 发明授权
    • Switch device and method of making same
    • 开关装置及其制作方法
    • US06797901B2
    • 2004-09-28
    • US10177036
    • 2002-06-21
    • You KondohMitsuchika Saito
    • You KondohMitsuchika Saito
    • H01H2900
    • H01H29/28H01H1/0036H01H61/02H01H2029/008H01H2061/006
    • The switch device comprises a pair of cavities, an elongate passage, a non-conductive fluid having a high electrical resistance, a conductive fluid having a high electrical conductivity and an electrical path. The passage is in fluid communication with the cavities and has a substantially elliptical cross-section over at least part of its length. The non-conductive fluid is disposed in each of the cavities. The conductive fluid is located in the passage. The electrical path is changeable between a connected state and a disconnected state by the non-conductive fluid separating the conductive fluid in the passage into non-contiguous conductive fluid portions.
    • 开关装置包括一对空腔,细长通道,具有高电阻的非导电流体,具有高电导率的导电流体和电路径。 通道与空腔流体连通,并且在其长度的至少一部分上具有基本椭圆形的横截面。 非导电流体设置在每个空腔中。 导电流体位于通道中。 通过将通道中的导电流体分离成不连续的导电流体部分的非导电流体,电路径可在连接状态和断开状态之间改变。
    • 7. 发明授权
    • Apparatus and method for extending the useful life of a data storage
system
    • 用于延长数据存储系统的使用寿命的装置和方法
    • US06000021A
    • 1999-12-07
    • US808951
    • 1997-02-19
    • Mitsuchika SaitoTakahiko KamaeKiyoyuki Ihara
    • Mitsuchika SaitoTakahiko KamaeKiyoyuki Ihara
    • G06F12/16G06F3/06G06K7/00G06K19/00G11B9/00G11B20/18G11B27/34G11B27/36G11C23/00G06F12/00H01S3/20
    • B82Y10/00G11B20/1816G11B27/34G11B27/36G11B9/14
    • Useful life extension for a data storage system in which either or both of read/write probes and storage areas are components subject to wear caused by the access operations. An access counter counts an access count for each component subject to wear. A data exchange module operates in response to the access count for one of the components subject to wear reaching a first threshold to perform a data exchange in which data stored in a first storage area are exchanged with data stored is a second storage area. When the components subject to wear are the storage areas, the first storage area is the storage area whose access count reached the first threshold value, and the second storage area is a storage area whose access count is less than the first threshold value. When the components subject to wear are the read/write probes, the first storage area is the storage area accessed by the read/write probe whose access count reached the first threshold value, and the second storage area is a storage area accessed by a read/write probe whose access count is less than the first threshold value. An address conversion table rewriting module operates after each data exchange to rewrite part of an address conversion table to assign the physical addresses of the storage areas after the data exchange to logical addresses that correspond to the physical addresses of the storage areas before the data exchange.
    • 数据存储系统的使用寿命延长,其中读/写探针和存储区域中的一个或两个是由访问操作引起的磨损的组件。 访问计数器对每个受磨损的组件计数访问计数。 数据交换模块响应于磨损达到第一阈值的一个组件的访问次数进行操作,以执行数据交换,其中存储在第一存储区域中的数据与存储的数据交换为第二存储区域。 当被磨损的部件是存储区域时,第一存储区域是其访问次数达到第一阈值的存储区域,并且第二存储区域是其访问次数小于第一阈值的存储区域。 当受磨损的部件是读/写探针时,第一存储区域是由访问计数达到第一阈值的读/写探针访问的存储区域,并且第二存储区域是由读取访问的存储区域 /写入探针,其访问次数小于第一个阈值。 地址转换表重写模块在每次数据交换之后进行操作以重写地址转换表的一部分,以便在数据交换之后将存储区域的物理地址分配给与数据交换之前的存储区域的物理地址对应的逻辑地址。
    • 10. 发明授权
    • Scanning memory device and error correction method
    • 扫描存储设备和纠错方法
    • US6000047A
    • 1999-12-07
    • US23665
    • 1998-02-10
    • Takahiko KamaeMitsuchika SaitoKiyoyuki Ihara
    • Takahiko KamaeMitsuchika SaitoKiyoyuki Ihara
    • G11C29/34G06F11/00
    • G11C29/34
    • A high-data density, high-data rate scanning memory device reads and writes data using a plurality of probes. The scanning memory device comprises a memory composed of a matrix of cell arrays each containing a submatrix of memory cells, a plurality of probes having a one-to-one correspondence to each cell array, and a positioning device that operates to simultaneously change the positions of probes relative to the cell arrays. Each of the cell arrays has a cell array status memory for storing information designating whether the cell array is functional or whether the cell array is defective. If the number of defective memory cells detected within each cell array exceeds some predetermined number, the cell array is designated as defective. Defective cell arrays are logically replaced by functional cell arrays. Error correction is applied to the data to reduce reading and writing errors by the scanning memory device and to maintain the integrity of data stored in the memory.
    • 高数据密度高数据速率扫描存储器件使用多个探针读取和写入数据。 扫描存储装置包括存储单元阵列矩阵的存储器,每个单元阵列包含存储单元的子矩阵,多个探针与每个单元阵列具有一一对应关系;以及定位装置,其操作以同时改变位置 的探针相对于细胞阵列。 每个单元阵列具有单元阵列状态存储器,用于存储指定单元阵列是功能性还是单元阵列有缺陷的信息。 如果在每个单元阵列内检测到的有缺陷的存储单元的数量超过预定数量,则将单元阵列指定为缺陷。 逻辑上由功能单元阵列代替有缺陷的单元阵列。 对数据应用错误校正,以减少扫描存储器件的读写错误并保持存储在存储器中的数据的完整性。