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    • 9. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US06690043B1
    • 2004-02-10
    • US09717039
    • 2000-11-22
    • Koji UsudaShinichi Takagi
    • Koji UsudaShinichi Takagi
    • H01L310328
    • H01L29/78696H01L29/1054H01L29/66742H01L29/78681H01L29/78687
    • A semiconductor device comprises a base substrate, an insulating film formed on the substrate, an undoped first and lattice-relaxed semiconductor layer formed on the insulating film, a second semiconductor layer having a tensile strain and formed on the first semiconductor layer, and a MISFET formed on the second semiconductor layer. Since the MISFET is formed in a strained Si layer, electrons are prevented from scattering in a channel region, improving the electron mobility. Furthermore, since the MISFET is formed in a thin SOI layer having a thickness of 100 nm or less, it is possible to reduce a parasitic capacitance in addition to the improvement of the electron mobility. As a result, the MISFET excellent in drivability can be obtained.
    • 半导体器件包括基底基板,形成在基板上的绝缘膜,形成在绝缘膜上的未掺杂的第一和晶格弛豫半导体层,具有拉伸应变并形成在第一半导体层上的第二半导体层,以及MISFET 形成在第二半导体层上。 由于MISFET形成在应变Si层中,所以防止电子在沟道区域中散射,提高电子迁移率。 此外,由于MISFET形成在厚度为100nm以下的薄SOI层中,除了改善电子迁移率之外,还可以减小寄生电容。 结果,可以获得驾驶性优异的MISFET。