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1. 发明申请

US20060115593A1 Method for preparing solid precursor tray for use in solid precursor evaporation system 有权
公开(公告)号：US20060115593A1
公开(公告)日：2006-06-01
申请号：US11007961
申请日：2004-12-09
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra Malhotra , Fenton McFeely , Robert Young
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra Malhotra , Fenton McFeely , Robert Young
IPC分类号： B05D1/18 , C23C16/00
CPC分类号： C23C16/4481 , C23C16/16
摘要： In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

2. 发明申请

US20060110530A1 Method for increasing deposition rates of metal layers from metal-carbonyl precursors 有权
标题翻译：提高金属 - 羰基前体金属层沉积速率的方法
公开(公告)号：US20060110530A1
公开(公告)日：2006-05-25
申请号：US10996145
申请日：2004-11-23
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

3. 发明申请

US20080003360A1 METHOD FOR INCREASING DEPOSITION RATES OF METAL LAYERS FROM METAL-CARBONYL PRECURSORS 有权
标题翻译：从金属碳前驱体增加金属层沉积速率的方法
公开(公告)号：US20080003360A1
公开(公告)日：2008-01-03
申请号：US11856946
申请日：2007-09-18
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/06
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

4. 发明申请

US20060182886A1 Method and system for improved delivery of a precursor vapor to a processing zone 审中-公开
标题翻译：用于改进将前体蒸气输送到处理区的方法和系统
公开(公告)号：US20060182886A1
公开(公告)日：2006-08-17
申请号：US11058676
申请日：2005-02-15
申请人： Emmanuel Guidotti , Kenji Suzuki , Gerrit Leusink , Fenton McFeely
发明人： Emmanuel Guidotti , Kenji Suzuki , Gerrit Leusink , Fenton McFeely
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： C23C16/4481 , C23C16/16 , C23C16/4404 , C23C16/4405 , C23C16/45565
摘要： A method and system for improved delivery of a solid precursor. A chemically inert coating is provided on system components in a precursor delivery line to reduce decomposition of a relatively unstable precursor vapor in the precursor delivery line, thereby allowing increased delivery of the precursor vapor to a processing zone for depositing a layer on a substrate. The solid precursor can, for example, be a ruthenium carbonyl or a rhenium carbonyl. The inert coating can, for example, be a CxFy-containing polymer, such as polytetrafluoroethylene or ethylene-chlorotrifluoroethylene. Other benefits of using an inert coating include easy periodic cleaning of deposits from the precursor delivery line.
摘要翻译：一种用于改进固体前体递送的方法和系统。在前体输送管线中的系统组分上提供化学惰性的涂层，以减少前体输送管线中相对不稳定的前体蒸汽的分解，从而允许增加前体蒸气的输送到用于在基底上沉积层的处理区域。固体前体可以是例如羰基钌或羰基铼。惰性涂层可以是例如聚四氟乙烯或乙烯 - 三氟氯乙烯的聚合物。使用惰性涂层的其他优点包括容易地从前体输送管线定期清洁沉积物。

5. 发明申请

US20060115590A1 Method and system for performing in-situ cleaning of a deposition system 审中-公开
标题翻译：用于进行沉积系统的原位清洗的方法和系统
公开(公告)号：US20060115590A1
公开(公告)日：2006-06-01
申请号：US10998394
申请日：2004-11-29
申请人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/4405 , C23C16/4481 , C23C16/4485
摘要： A method for depositing metal layers, such as Ruthenium, on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system, and depositing a metal layer from the metal carbonyl on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In the deposition system, the metal carbonyl is evaporated in a solid precursor evaporation system, and the precursor vapor is transported to the process chamber via a vapor delivery system. Further, an in-situ cleaning system is coupled to the vapor delivery system in order to perform periodic cleaning of the deposition system. Periodic in-situ cleaning permits achieving a greater deposition rate by operating the deposition system at higher temperature where precursor vapor can decompose and potentially deposit on surfaces of the deposition system.
摘要翻译：通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积诸如钌的金属层的方法包括在沉积系统中引入金属羰基前体，并在基底上沉积金属羰基金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在沉积系统中，金属羰基在固体前驱体蒸发系统中蒸发，并且前体蒸气通过蒸气输送系统输送到处理室。此外，原位清洁系统耦合到蒸气输送系统，以便对沉积系统进行定期清洁。定期原位清洗允许通过在较高温度下操作沉积系统来实现更高的沉积速率，其中前体蒸气可以分解并潜在地沉积在沉积系统的表面上。

6. 发明申请

US20060068588A1 Low-pressure deposition of ruthenium and rhenium metal layers from metal carbonyl precursors 审中-公开
标题翻译：从金属羰基前体中低压沉积钌和铼金属层
公开(公告)号：US20060068588A1
公开(公告)日：2006-03-30
申请号：US10953466
申请日：2004-09-30
申请人： Hideaki Yamasaki , Kenji Suzuki , Emmanuel Guidotti , Enrico Mosca , Gert Leusink , Yumiko Kawano , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Kenji Suzuki , Emmanuel Guidotti , Enrico Mosca , Gert Leusink , Yumiko Kawano , Fenton McFeely , Sandra Malhotra
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.
摘要翻译：提出了一种用于在具有高沉积速率，低颗粒污染和在图案化衬底上良好的阶梯覆盖的衬底上沉积Ru和Re金属层的方法。该方法包括在处理室中提供衬底，在处理室中引入工艺气体，其中处理气体包括载气和选自羰基钌羰基前体和铼羰基前体的金属前体。该方法还包括通过热化学气相沉积工艺在小于约20mTorr的处理室压力下在衬底上沉积Ru或Re金属层。

7. 发明授权

US07488512B2 Method for preparing solid precursor tray for use in solid precursor evaporation system 有权
标题翻译：制备用于固体前驱物蒸发系统的固体前体托盘的方法
公开(公告)号：US07488512B2
公开(公告)日：2009-02-10
申请号：US11007961
申请日：2004-12-09
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra G. Malhotra , Fenton McFeely , Robert R. Young, Jr.
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra G. Malhotra , Fenton McFeely , Robert R. Young, Jr.
IPC分类号： B05D3/00 , B22F3/00
CPC分类号： C23C16/4481 , C23C16/16
摘要： In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.
摘要翻译：在配置用于诸如热化学气相沉积（TCVD）的薄膜沉积系统中的固体前驱物蒸发系统中，描述了制备一种或多种固体前体塔板的方法。固体前体可以使用浸渍技术，旋涂技术和烧结技术中的一种或多种在诸如托盘的涂布基材上形成。

8. 发明申请

US20060224008A1 Method and system for refurbishing a metal carbonyl precursor 失效
标题翻译：用于翻新金属羰基前体的方法和系统
公开(公告)号：US20060224008A1
公开(公告)日：2006-10-05
申请号：US11095448
申请日：2005-03-31
申请人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely
发明人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely
IPC分类号： C07F15/00
CPC分类号： C23C16/4481 , C23C16/4485 , C23C16/45593
摘要： A method and system for refurbishing a metal carbonyl precursor. The method includes providing a metal precursor vaporization system containing a metal carbonyl precursor containing un-reacted and partially reacted metal carbonyl precursor, flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization system to transfer the un-reacted metal carbonyl precursor vapor to the precursor collection system, and collecting the transferred metal carbonyl precursor in the precursor collection system. A method is provided for monitoring at least one metal carbonyl precursor parameter to determine a status of the metal carbonyl precursor and the need for refurbishing the metal carbonyl precursor.
摘要翻译：一种用于翻新金属羰基前体的方法和系统。该方法包括提供含有含有未反应和部分反应的金属羰基前体的金属羰基前体的金属前体蒸发系统，其将含CO气体通过金属前体蒸发系统流动到与金属前体蒸发流体连通的前体收集系统系统将未反应的金属羰基前体蒸气转移到前体收集系统中，并在前体收集系统中收集转移的金属羰基前体。提供了一种用于监测至少一种金属羰基前体参数以确定羰基金属前体的状态以及需要翻新金属羰基前体的方法。

9. 发明申请

US20050199502A1 Method for electroplating on resistive substrates 审中-公开
标题翻译：电阻基板电镀方法
公开(公告)号：US20050199502A1
公开(公告)日：2005-09-15
申请号：US11123117
申请日：2005-05-06
申请人： Panayotis Andricacos , Hariklia Deligianni , Wilma Horkans , Keith Kwietniak , Michael Lane , Sandra Malhotra , Fenton McFeely , Conal Murray , Kenneth Rodbell , Philippe Vereecken
发明人： Panayotis Andricacos , Hariklia Deligianni , Wilma Horkans , Keith Kwietniak , Michael Lane , Sandra Malhotra , Fenton McFeely , Conal Murray , Kenneth Rodbell , Philippe Vereecken
IPC分类号： C25D5/18 , C25D7/12 , C25D5/02
CPC分类号： C25D5/18 , C25D7/12 , Y10S428/926 , Y10T428/12493 , Y10T428/12528 , Y10T428/12771 , Y10T428/12778 , Y10T428/12903
摘要： A conductive material is electroplated onto a platable resistive metal barrier layer(s) employing a plating bath optionally comprising a super filling additive and a suppressor, and by changing the current or voltage as a function of the area of plated metal. A structure is also provided that comprises a substrate, a platable metal barrier layer(s) located on the substrate and a relatively continuous uniform electroplated layer of a conductive material located on the platable resistive metal barrier layer.
摘要翻译：导电材料电镀在可镀敷的电阻金属阻挡层上，该层使用任选地包含超填充添加剂和抑制剂的电镀槽，并且通过改变作为电镀金属面积的函数的电流或电压。还提供了一种结构，其包括衬底，位于衬底上的可镀金属阻挡层和位于可镀电阻金属阻挡层上的导电材料的相对连续的均匀电镀层。

10. 发明申请

US20050110142A1 Diffusion barriers formed by low temperature deposition 审中-公开
标题翻译：通过低温沉积形成的扩散壁垒
公开(公告)号：US20050110142A1
公开(公告)日：2005-05-26
申请号：US10722934
申请日：2003-11-26
申请人： Michael Lane , Christian Lavoie , Sandra Malhotra , Fenton McFeely , John Yurkas
发明人： Michael Lane , Christian Lavoie , Sandra Malhotra , Fenton McFeely , John Yurkas
IPC分类号： H01L21/285 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/532 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/28556 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A solid state device includes a first material and a second material. A barrier layer is formed between the first material and the second material to prevent diffusion between the first material and the second material. The barrier layer includes a metal form of at least one of Ru and Re. The barrier layer is preferably formed using a low temperature deposition process, where the substrate is less than 400 degrees C.
摘要翻译：固体装置包括第一材料和第二材料。在第一材料和第二材料之间形成阻挡层以防止第一材料和第二材料之间的扩散。阻挡层包括Ru和Re中的至少一种的金属形式。阻挡层优选使用低温沉积工艺形成，其中衬底小于400℃。

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