专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060182886A1 Method and system for improved delivery of a precursor vapor to a processing zone 审中-公开
标题翻译：用于改进将前体蒸气输送到处理区的方法和系统
公开(公告)号：US20060182886A1
公开(公告)日：2006-08-17
申请号：US11058676
申请日：2005-02-15
申请人： Emmanuel Guidotti , Kenji Suzuki , Gerrit Leusink , Fenton McFeely
发明人： Emmanuel Guidotti , Kenji Suzuki , Gerrit Leusink , Fenton McFeely
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： C23C16/4481 , C23C16/16 , C23C16/4404 , C23C16/4405 , C23C16/45565
摘要： A method and system for improved delivery of a solid precursor. A chemically inert coating is provided on system components in a precursor delivery line to reduce decomposition of a relatively unstable precursor vapor in the precursor delivery line, thereby allowing increased delivery of the precursor vapor to a processing zone for depositing a layer on a substrate. The solid precursor can, for example, be a ruthenium carbonyl or a rhenium carbonyl. The inert coating can, for example, be a CxFy-containing polymer, such as polytetrafluoroethylene or ethylene-chlorotrifluoroethylene. Other benefits of using an inert coating include easy periodic cleaning of deposits from the precursor delivery line.
摘要翻译：一种用于改进固体前体递送的方法和系统。在前体输送管线中的系统组分上提供化学惰性的涂层，以减少前体输送管线中相对不稳定的前体蒸汽的分解，从而允许增加前体蒸气的输送到用于在基底上沉积层的处理区域。固体前体可以是例如羰基钌或羰基铼。惰性涂层可以是例如聚四氟乙烯或乙烯 - 三氟氯乙烯的聚合物。使用惰性涂层的其他优点包括容易地从前体输送管线定期清洁沉积物。

2. 发明申请

US20060110530A1 Method for increasing deposition rates of metal layers from metal-carbonyl precursors 有权
标题翻译：提高金属 - 羰基前体金属层沉积速率的方法
公开(公告)号：US20060110530A1
公开(公告)日：2006-05-25
申请号：US10996145
申请日：2004-11-23
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

3. 发明申请

US20080003360A1 METHOD FOR INCREASING DEPOSITION RATES OF METAL LAYERS FROM METAL-CARBONYL PRECURSORS 有权
标题翻译：从金属碳前驱体增加金属层沉积速率的方法
公开(公告)号：US20080003360A1
公开(公告)日：2008-01-03
申请号：US11856946
申请日：2007-09-18
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/06
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

4. 发明申请

US20060115593A1 Method for preparing solid precursor tray for use in solid precursor evaporation system 有权
公开(公告)号：US20060115593A1
公开(公告)日：2006-06-01
申请号：US11007961
申请日：2004-12-09
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra Malhotra , Fenton McFeely , Robert Young
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra Malhotra , Fenton McFeely , Robert Young
IPC分类号： B05D1/18 , C23C16/00
CPC分类号： C23C16/4481 , C23C16/16
摘要： In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

5. 发明申请

US20060115590A1 Method and system for performing in-situ cleaning of a deposition system 审中-公开
标题翻译：用于进行沉积系统的原位清洗的方法和系统
公开(公告)号：US20060115590A1
公开(公告)日：2006-06-01
申请号：US10998394
申请日：2004-11-29
申请人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/4405 , C23C16/4481 , C23C16/4485
摘要： A method for depositing metal layers, such as Ruthenium, on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system, and depositing a metal layer from the metal carbonyl on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In the deposition system, the metal carbonyl is evaporated in a solid precursor evaporation system, and the precursor vapor is transported to the process chamber via a vapor delivery system. Further, an in-situ cleaning system is coupled to the vapor delivery system in order to perform periodic cleaning of the deposition system. Periodic in-situ cleaning permits achieving a greater deposition rate by operating the deposition system at higher temperature where precursor vapor can decompose and potentially deposit on surfaces of the deposition system.
摘要翻译：通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积诸如钌的金属层的方法包括在沉积系统中引入金属羰基前体，并在基底上沉积金属羰基金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在沉积系统中，金属羰基在固体前驱体蒸发系统中蒸发，并且前体蒸气通过蒸气输送系统输送到处理室。此外，原位清洁系统耦合到蒸气输送系统，以便对沉积系统进行定期清洁。定期原位清洗允许通过在较高温度下操作沉积系统来实现更高的沉积速率，其中前体蒸气可以分解并潜在地沉积在沉积系统的表面上。

6. 发明申请

US20060224008A1 Method and system for refurbishing a metal carbonyl precursor 失效
标题翻译：用于翻新金属羰基前体的方法和系统
公开(公告)号：US20060224008A1
公开(公告)日：2006-10-05
申请号：US11095448
申请日：2005-03-31
申请人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely
发明人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely
IPC分类号： C07F15/00
CPC分类号： C23C16/4481 , C23C16/4485 , C23C16/45593
摘要： A method and system for refurbishing a metal carbonyl precursor. The method includes providing a metal precursor vaporization system containing a metal carbonyl precursor containing un-reacted and partially reacted metal carbonyl precursor, flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization system to transfer the un-reacted metal carbonyl precursor vapor to the precursor collection system, and collecting the transferred metal carbonyl precursor in the precursor collection system. A method is provided for monitoring at least one metal carbonyl precursor parameter to determine a status of the metal carbonyl precursor and the need for refurbishing the metal carbonyl precursor.
摘要翻译：一种用于翻新金属羰基前体的方法和系统。该方法包括提供含有含有未反应和部分反应的金属羰基前体的金属羰基前体的金属前体蒸发系统，其将含CO气体通过金属前体蒸发系统流动到与金属前体蒸发流体连通的前体收集系统系统将未反应的金属羰基前体蒸气转移到前体收集系统中，并在前体收集系统中收集转移的金属羰基前体。提供了一种用于监测至少一种金属羰基前体参数以确定羰基金属前体的状态以及需要翻新金属羰基前体的方法。

7. 发明申请

US20070032079A1 METHOD FOR THIN FILM DEPOSITION USING MULTI-TRAY FILM PRECURSOR EVAPORATION SYSTEM 有权
标题翻译：使用多层薄膜前驱体蒸发系统薄膜沉积的方法
公开(公告)号：US20070032079A1
公开(公告)日：2007-02-08
申请号：US11537575
申请日：2006-09-29
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa
IPC分类号： H01L21/44
CPC分类号： C23C16/4481 , C23C16/16
摘要： A method for depositing a Ru metal layer on a patterned substrate from a film precursor vapor delivered from a multi-tray film precursor evaporation system. The method comprises providing a patterned substrate in a process chamber of a deposition system, and forming a process gas containing Ru3(CO)12 precursor vapor and a carrier gas comprising CO gas. The process gas is formed by: providing a solid Ru3(CO)12 precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray is configured to support the solid precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid precursor; heating the solid precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60° C. and maintaining the solid precursor at the temperature to form the vapor; and flowing the carrier gas in contact with the plurality of surfaces of the solid precursor during the heating to capture Ru3(CO)12 precursor vapor in the carrier gas as the vapor is being formed at the plurality of surfaces. The method further includes transporting the process gas from the precursor evaporation system to the process chamber and exposing the patterned substrate to the process gas to deposit a Ru metal layer on the patterned substrate by a thermal CVD.
摘要翻译：一种用于从多托盘膜前体蒸发系统递送的膜前体蒸气在图案化衬底上沉积Ru金属层的方法。该方法包括在沉积系统的处理室中提供图案化的衬底，并且形成含有Ru 3（CO）12 N 2前体蒸气的工艺气体和包含CO 加油站。工艺气体通过以下方式形成：在前体蒸发系统内的多个间隔的塔板中提供固体Ru 3（CO）12 N 2前体，其中每个托盘被构造成支撑所述固体前体并且其中所述多个间隔的托盘共同提供固体前体的多个表面; 将前体蒸发系统中的多个间隔的塔板中的固体前体加热到大于约60℃的温度，并将固体前体保持在该温度以形成蒸气; 并且在加热期间使载气与固体前体的多个表面接触，以使载气中的Ru 3（CO）12 N 2前体蒸汽作为蒸气在多个表面上形成。该方法还包括将处理气体从前体蒸发系统输送到处理室，并将图案化衬底暴露于工艺气体，以通过热CVD沉积图案化衬底上的Ru金属层。

8. 发明申请

US20060068588A1 Low-pressure deposition of ruthenium and rhenium metal layers from metal carbonyl precursors 审中-公开
标题翻译：从金属羰基前体中低压沉积钌和铼金属层
公开(公告)号：US20060068588A1
公开(公告)日：2006-03-30
申请号：US10953466
申请日：2004-09-30
申请人： Hideaki Yamasaki , Kenji Suzuki , Emmanuel Guidotti , Enrico Mosca , Gert Leusink , Yumiko Kawano , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Kenji Suzuki , Emmanuel Guidotti , Enrico Mosca , Gert Leusink , Yumiko Kawano , Fenton McFeely , Sandra Malhotra
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.
摘要翻译：提出了一种用于在具有高沉积速率，低颗粒污染和在图案化衬底上良好的阶梯覆盖的衬底上沉积Ru和Re金属层的方法。该方法包括在处理室中提供衬底，在处理室中引入工艺气体，其中处理气体包括载气和选自羰基钌羰基前体和铼羰基前体的金属前体。该方法还包括通过热化学气相沉积工艺在小于约20mTorr的处理室压力下在衬底上沉积Ru或Re金属层。

9. 发明申请

US20060185598A1 Film precursor tray for use in a film precursor evaporation system and method of using 有权
标题翻译：用于薄膜前体蒸发系统的薄膜前体托盘及其使用方法
公开(公告)号：US20060185598A1
公开(公告)日：2006-08-24
申请号：US11351546
申请日：2006-02-10
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa , Tadahiro Ishizaka
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa , Tadahiro Ishizaka
IPC分类号： C23C16/00
CPC分类号： C23C16/4481
摘要： A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing the deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.
摘要翻译：描述了与高电导蒸气传输系统耦合的高电导多托盘膜前体蒸发系统，以通过增加膜前体的暴露表面积来增加沉积速率。多托盘膜前体蒸发系统包括一个或多个托盘。每个托盘被构造成支撑和保持例如固体粉末形式或固体片剂形式的膜前体。此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。例如，载体气体向内流过膜前体，并且垂直向上流过可堆放托盘内的流动通道并通过固体前驱物蒸发系统中的出口。

10. 发明申请

US20060112882A1 Multi-tray film precursor evaporation system and thin film deposition system incorporating same 有权
公开(公告)号：US20060112882A1
公开(公告)日：2006-06-01
申请号：US10998420
申请日：2004-11-29
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa
IPC分类号： C23C16/00
CPC分类号： C23C16/4481 , C23C16/16
摘要： A high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system includes a base tray with one or more upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式