专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06744066B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06744066B2
公开(公告)日：2004-06-01
申请号：US09785428
申请日：2001-02-20
申请人： Kenji Shimoyama , Kazumasa Kiyomi , Hideki Gotoh , Satoru Nagao
发明人： Kenji Shimoyama , Kazumasa Kiyomi , Hideki Gotoh , Satoru Nagao
IPC分类号： H01L2906
CPC分类号： H01S5/341 , B82Y20/00 , H01L33/06 , H01L33/24 , H01S5/2275 , H01S2304/04
摘要： The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.
摘要翻译：根据本发明的半导体器件包括在半导体衬底上或在半导体衬底上生长的外延生长层上形成具有V形横截面的V形沟槽，并且仅在所述V的底部提供有源层 -槽。根据本发明的制造半导体器件的方法包括以下步骤：在半导体衬底或其上生长的外延生长层的<011>方向上形成条状蚀刻保护膜，使用氯化氢作为蚀刻进行气体蚀刻在半导体衬底上或在半导体衬底上生长的外延生长层上的气体形成V形槽，并在所述V形槽的底部形成有源层。

2. 发明授权

US06589807B2 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US06589807B2
公开(公告)日：2003-07-08
申请号：US09867440
申请日：2001-05-31
申请人： Kenji Shimoyama , Kazumasa Kiyomi , Hideki Gotoh , Satoru Nagao
发明人： Kenji Shimoyama , Kazumasa Kiyomi , Hideki Gotoh , Satoru Nagao
IPC分类号： H01L2100
CPC分类号： H01S5/341 , B82Y20/00 , H01L33/06 , H01L33/24 , H01S5/2275 , H01S2304/04
摘要： The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

3. 发明授权

US06265733B1 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US06265733B1
公开(公告)日：2001-07-24
申请号：US08970145
申请日：1997-11-13
申请人： Kenji Shimoyama , Kazumasa Kiyomi , Hideki Gotoh , Satoru Nagao
发明人： Kenji Shimoyama , Kazumasa Kiyomi , Hideki Gotoh , Satoru Nagao
IPC分类号： H01L3300
CPC分类号： H01S5/341 , B82Y20/00 , H01L33/06 , H01L33/24 , H01S5/2275 , H01S2304/04
摘要： The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

4. 发明授权

US5608751A Laser diode and process for producing the same 失效
标题翻译：激光二极管及其制造方法
公开(公告)号：US5608751A
公开(公告)日：1997-03-04
申请号：US209963
申请日：1994-03-14
申请人： Kenji Shimoyama , Toshinari Fujimori , Satoru Nagao , Hideki Gotoh
发明人： Kenji Shimoyama , Toshinari Fujimori , Satoru Nagao , Hideki Gotoh
IPC分类号： H01S5/00 , H01S5/02 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0211 , H01S5/2207 , H01S5/221 , H01S5/222 , H01S5/32325
摘要： The disclosure describes a laser diode comprising a Group III-V compound single-crystal substrate of first conduction type; a first cladding layer of first conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said single-crystal substrate; an active layer composed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.0.5 and 0.3.ltoreq.y.ltoreq.0.75) and formed on said first cladding layer; a second cladding layer of second conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said active layer and having a ridge; and a current blocking layer composed of Al.sub.u Ga.sub.1-u As.sub.v P.sub.1-v, (0.ltoreq.u.ltoreq.1 and 0.ltoreq.v.ltoreq.1) and so formed as to contact the lateral side of the ridge of said second cladding layer,(1) each refractive index of the first and second cladding layers being smaller than that of the active layer and (2) the refractive index of the current blocking layer being smaller than that of the second cladding layer.
摘要翻译：本公开描述了一种包括第一导电类型的III-V族化合物单晶衬底的激光二极管; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）组成的第一导电类型的第一包层，形成在所述单晶衬底上; 形成在所述第一包层上的由（Al x Ga 1-x）y In 1-y P（0≤x≤0.5,0.3≤y≤0.75）组成的有源层; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）构成并形成在所述有源层上并具有脊的第二导电类型的第二包层; 和由AluGa1-uAsvP1-v组成的电流阻挡层，其形成为接触所述第二包层的脊的横向侧面层，（1）第一和第二包覆层的每个折射率小于有源层的折射率，和（2）电流阻挡层的折射率小于第二覆层的折射率。

5. 发明授权

US5804834A Semiconductor device having contact resistance reducing layer 失效
标题翻译：具有接触电阻降低层的半导体器件
公开(公告)号：US5804834A
公开(公告)日：1998-09-08
申请号：US888641
申请日：1997-07-07
申请人： Kenji Shimoyama , Hideki Gotoh
发明人： Kenji Shimoyama , Hideki Gotoh
IPC分类号： H01L29/201 , H01L29/45 , H01L33/00 , H01L33/02 , H01L33/10 , H01L33/32 , H01L33/40 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/02 , H01L29/201 , H01L29/452 , H01L33/0075 , H01L33/32 , H01L33/10 , H01L33/40
摘要： In a wide band cap semiconductor, a GaP.sub.x N.sub.1-x (0.1.ltoreq.x.ltoreq.0.9) layer is inserted between a layer comprising AlGaInN and an electrode, The potential barrier between the electrode and the surface layer can be reduced. Contact resistance can be decreased, and ohmic contact can be easily taken up.
摘要翻译：在宽带帽半导体中，GaPxN1-x（0.1

6. 发明授权

US5018159A Divided electrode type semiconductor laser device 失效
标题翻译：分电极型半导体激光器件
公开(公告)号：US5018159A
公开(公告)日：1991-05-21
申请号：US440522
申请日：1989-11-22
申请人： Yoshihiro Suzuki , Hiroyoshi Yajima , Junichi Shimada , Kenji Shimoyama , Hideki Gotoh
发明人： Yoshihiro Suzuki , Hiroyoshi Yajima , Junichi Shimada , Kenji Shimoyama , Hideki Gotoh
IPC分类号： H01S5/00 , H01S5/042
CPC分类号： H01S5/0425
摘要： Disclosed is a divided electrode type semiconductor layer device designed to improve the separation of electrodes without reducing the amount of doping for carrier injection layers. A double-hetero-structure is formed on a semi-insulating substrate, and at least two pairs of carrier injection clad layers are thereafter buried like lands while a high-resistance portion is left between the carrier injection clad layers to electrically separate these layers. The electrodes are respectively formed on the separated carrier injection layers.

7. 发明授权

US5827365A Compound semiconductor and its fabrication 失效
标题翻译：复合半导体及其制造
公开(公告)号：US5827365A
公开(公告)日：1998-10-27
申请号：US376443
申请日：1995-01-23
申请人： Kenji Shimoyama , Hideki Gotoh
发明人： Kenji Shimoyama , Hideki Gotoh
IPC分类号： H01L21/20 , H01L21/205 , C30B25/14
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02576 , H01L21/0262 , H01L21/02639
摘要： A vapor phase growth process for the fabrication of a thin film form of compound semiconductor of elements of Groups III-V, using a halogen element-free hydride and a halogen element-free organic metal as the source materials for growth, is characterized in that a halide gas and/or a halogen gas that are free from the mother elements of the compound to be grown are added to the reaction atmosphere while the compound is growing. A trace amount(s) of the halide and/or halogen gas(es) that are free from the mother elements of the compound to be grown, such as HCl, is added to the reaction atmosphere while the compound is growing, thereby making it possible to flatten the heterojunction interface or effect the growth of high-quality crystals without deposition of polycrystals on a mask over a wide range.
摘要翻译：用于制造III-V族元素的薄膜形式的使用无卤元素氢化物和无卤元素的有机金属作为生长源的气相生长方法的特征在于：在化合物生长的同时，在反应气氛中加入不含待生长化合物的母体元素的卤化物气体和/或卤素气体。在化合物生长的同时，向反应气氛中加入痕量的卤化物和/或卤素气体，所述卤化物和/或卤素气体不含待生长的化合物的母体元素，例如HCl，从而使其成为可能使异质结界面变平或影响高质量晶体的生长，而不会在宽范围的掩模上沉积多晶体。

8. 发明授权

US5811839A Semiconductor light-emitting devices 失效
标题翻译：半导体发光器件
公开(公告)号：US5811839A
公开(公告)日：1998-09-22
申请号：US521980
申请日：1995-08-31
申请人： Kenji Shimoyama , Nobuyuki Hosoi , Katsushi Fujii , Atsunori Yamauchi , Hideki Gotoh , Yoshihito Sato
发明人： Kenji Shimoyama , Nobuyuki Hosoi , Katsushi Fujii , Atsunori Yamauchi , Hideki Gotoh , Yoshihito Sato
IPC分类号： H01L33/30 , H01S5/32 , H01S5/323 , H01L33/00 , H01S3/19
CPC分类号： H01L33/30 , H01S5/32325 , H01S5/3211
摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.
摘要翻译：本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物，高达0.5μm的有源层，位于第二覆层旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型 AlGaInP化合物，并且具有至多0.5μm的厚度，以及位于第三覆盖层旁边并包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电类型的光提取层型AlGaP或GaP，并且具有1μm至100μm的厚度。

9. 发明授权

US5145807A Method of making semiconductor laser devices 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US5145807A
公开(公告)日：1992-09-08
申请号：US545794
申请日：1990-06-29
申请人： Kenji Shimoyama , Hideki Gotoh
发明人： Kenji Shimoyama , Hideki Gotoh
IPC分类号： H01S5/042 , H01S5/22 , H01S5/227 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/2203 , H01S5/227 , H01S5/34313 , H01S5/0424 , H01S5/2275 , H01S5/3432 , Y10S148/095
摘要： Carrier injection layers are formed on an Al.sub.x Ga.sub.1-x As clad layer of high resistance by embedding and re-growth with the use of crystal growth processes such as MO-VPE or MO-MBE where material supply sources are all provided by gas sources, whereby it is not required to mesa-etch embedding regions to a depth reaching a substrate. The formation of any separate blocking layer is dispensed with, any possible influence of the substrate is elminated, and the time constant is decreased by decreasing the inter-electrode capacity.
摘要翻译：通过使用诸如MO-VPE或MO-MBE的晶体生长工艺的嵌入和再生长，在气体源全部提供材料供应源的情况下，在高电阻的Al x Ga 1-x As包层上形成载流子注入层，由此不需要将嵌入区域的台面蚀刻到到达衬底的深度。省略任何单独的阻挡层的形成，衬底的任何可能的影响被消除，并且通过降低电极间电容来降低时间常数。

10. 发明授权

US06278137B1 Semiconductor light-emitting devices 失效
标题翻译：半导体发光器件
公开(公告)号：US06278137B1
公开(公告)日：2001-08-21
申请号：US09035333
申请日：1998-03-05
申请人： Kenji Shimoyama , Nobuyuki Hosoi , Katsushi Fujii , Atsunori Yamauchi , Hideki Gotoh , Yoshihito Sato
发明人： Kenji Shimoyama , Nobuyuki Hosoi , Katsushi Fujii , Atsunori Yamauchi , Hideki Gotoh , Yoshihito Sato
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01S5/3211 , H01S5/32325
摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.
摘要翻译：本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物，高达0.5μm的有源层，位于第二覆盖层的旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型的AlGaInP 并且具有高达0.5μm的厚度，以及位于第三覆盖层旁边并且包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电型AlGaP的光提取层或GaP，并且具有1μm至100μm的厚度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式