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1. 发明授权

US5811839A Semiconductor light-emitting devices 失效
标题翻译：半导体发光器件
公开(公告)号：US5811839A
公开(公告)日：1998-09-22
申请号：US521980
申请日：1995-08-31
申请人： Kenji Shimoyama , Nobuyuki Hosoi , Katsushi Fujii , Atsunori Yamauchi , Hideki Gotoh , Yoshihito Sato
发明人： Kenji Shimoyama , Nobuyuki Hosoi , Katsushi Fujii , Atsunori Yamauchi , Hideki Gotoh , Yoshihito Sato
IPC分类号： H01L33/30 , H01S5/32 , H01S5/323 , H01L33/00 , H01S3/19
CPC分类号： H01L33/30 , H01S5/32325 , H01S5/3211
摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.
摘要翻译：本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物，高达0.5μm的有源层，位于第二覆层旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型 AlGaInP化合物，并且具有至多0.5μm的厚度，以及位于第三覆盖层旁边并包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电类型的光提取层型AlGaP或GaP，并且具有1μm至100μm的厚度。

2. 发明授权

US06278137B1 Semiconductor light-emitting devices 失效
标题翻译：半导体发光器件
公开(公告)号：US06278137B1
公开(公告)日：2001-08-21
申请号：US09035333
申请日：1998-03-05
申请人： Kenji Shimoyama , Nobuyuki Hosoi , Katsushi Fujii , Atsunori Yamauchi , Hideki Gotoh , Yoshihito Sato
发明人： Kenji Shimoyama , Nobuyuki Hosoi , Katsushi Fujii , Atsunori Yamauchi , Hideki Gotoh , Yoshihito Sato
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01S5/3211 , H01S5/32325
摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.
摘要翻译：本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物，高达0.5μm的有源层，位于第二覆盖层的旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型的AlGaInP 并且具有高达0.5μm的厚度，以及位于第三覆盖层旁边并且包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电型AlGaP的光提取层或GaP，并且具有1μm至100μm的厚度。

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