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    • 5. 发明授权
    • Semiconductor light-emitting devices
    • 半导体发光器件
    • US06278137B1
    • 2001-08-21
    • US09035333
    • 1998-03-05
    • Kenji ShimoyamaNobuyuki HosoiKatsushi FujiiAtsunori YamauchiHideki GotohYoshihito Sato
    • Kenji ShimoyamaNobuyuki HosoiKatsushi FujiiAtsunori YamauchiHideki GotohYoshihito Sato
    • H01L3300
    • H01L33/30H01S5/3211H01S5/32325
    • The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.
    • 本发明提供一种半导体发光器件,包括:第一覆盖层,包括第一导电类型的AlGaAsP化合物,位于第一覆盖层旁边的第二覆盖层,包括第一导电型AlGaInP化合物, 高达0.5μm的有源层,位于第二覆盖层的旁边并且包括第一或第二导电型AlGaInP或GaInP,位于有源层旁边的第三覆盖层包括第二导电类型的AlGaInP 并且具有高达0.5μm的厚度,以及位于第三覆盖层旁边并且包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电型AlGaP的光提取层 或GaP,并且具有1μm至100μm的厚度。
    • 6. 发明授权
    • Semiconductor light-emitting device
    • 半导体发光装置
    • US6023483A
    • 2000-02-08
    • US48183
    • 1998-03-26
    • Kenji ShimoyamaKatsushi FujiiSatoru NagaoHideki Goto
    • Kenji ShimoyamaKatsushi FujiiSatoru NagaoHideki Goto
    • H01S5/223H01S3/19
    • H01S5/2231H01S5/223
    • A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.
    • 一种半导体发光器件,包括其上具有的衬底:第一导电型第一覆盖层; 活性层 第二导电型第一包层,其具有注入电流的条带区域和剩余区域; 脊部,包括:形成在所述第二导电型第一包层的条带区域上的脊形第二导电型第二包层; 形成在所述脊状第二导电型第二包覆层上的第二导电型接触层; 以及形成在所述第二导电型第一覆盖层上以覆盖其剩余区域的保护膜,其中所述第二导电型第二覆盖层的一部分形成在所述保护膜上,或者其中所述接触层形成在基本上整个表面上 所述第二导电型第二包覆层的面积,或者其中所述脊部在其侧表面上没有保护层。
    • 10. 发明申请
    • III/V GROUP NITRIDE SEMICONDUCTOR, PHOTOCATALYTIC SEMICONDUCTOR DEVICE, PHOTOCATALYTIC OXIDATION-REDUCTION REACTION APPARATUS AND EXECUTION PROCESS OF PHOTOELECTROCHEMICAL REACTION
    • III / V族氮化物半导体,光电子半导体器件,光催化氧化还原反应装置和光电化学反应的执行过程
    • US20090045072A1
    • 2009-02-19
    • US12066069
    • 2006-09-06
    • Katsushi FujiiKazuhiro OhkawaMasato OnoTakashi Ito
    • Katsushi FujiiKazuhiro OhkawaMasato OnoTakashi Ito
    • C25B1/00C01B21/00C25B9/00
    • C30B29/403B01J35/004C30B29/406H01L21/0254H01L21/02576H01L21/0262
    • Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction.In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5×1016 cm−3 or more, but 3.0×1018 cm−3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate. In the photocatalytic oxidation-reduction reaction apparatus, one electrode of a pair of electrodes for electrolysis, which are electrically connected to each other in a state brought into contact with an electrolyte, is composed of the III/V group nitride semiconductor, and a catalytic reaction surface making up the III/V group nitride semiconductor is irradiated with light, thereby causing an oxidation reaction or reduction reaction on the catalytic reaction surface.
    • 提供一种III / V族氮化物半导体,通过光照射,光催化半导体器件,光催化氧化还原反应设备和光电化学反应的执行过程,在光转换效率高的光转换效率下进行氧化还原反应。 在III / V族氮化物半导体中,催化反应面的X射线摇摆曲线的半峰全宽为400arcsec以下,具有催化反应面的表层部的载流子密度为1.5 x1016cm -3以上,3.0×10 18 cm -3以下。 光催化半导体器件具有层叠在基板上的III / V族氮化物半导体。 在光催化氧化还原反应装置中,在与电解质接触的状态下电连接的一对电极的一个电极由III / V族氮化物半导体和催化剂 对构成III / V族氮化物半导体的反应面进行光照射,从而在催化反应面上发生氧化反应或还原反应。