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1. 发明授权

US08354337B2 Metal oxide film formation method and apparatus 有权
标题翻译：金属氧化膜形成方法和装置
公开(公告)号：US08354337B2
公开(公告)日：2013-01-15
申请号：US12781934
申请日：2010-05-18
申请人： Kenji Matsumoto , Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
发明人： Kenji Matsumoto , Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
IPC分类号： H01L21/44
CPC分类号： C23C16/40 , C23C16/45557 , C23C16/46 , H01L21/02175 , H01L21/02271 , H01L21/0231 , H01L21/02315 , H01L21/28556 , H01L21/31604
摘要： [Problems]There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness.[Means for Solving the Problems]A metal oxide film forming method includes a process (1) of supplying a metal source gas to a surface of a base before a temperature of the base reaches a film formation temperature of a metal oxide film; and a process (2) of setting the temperature of the base to be equal to or higher than the film formation temperature and forming the metal oxide film on the base by making a reaction between the metal source gas supplied to the surface of the base and residual moisture on the surface of the base.
摘要翻译： [问题]提供一种能够控制金属氧化物的膜厚度的金属氧化物膜形成方法，即使金属氧化物受到自限制的厚度。解决问题的手段金属氧化物膜形成方法包括：在基材的温度达到金属氧化物膜的成膜温度之前，将金属源气体供给到碱的表面的工序（1）以及将基材的温度设定为成膜温度以上的工序（2），并且通过使供给到基材表面的金属源气体和底部表面残留的水分。

2. 发明申请

US20100323512A1 METAL OXIDE FILM FORMATION METHOD AND APPARATUS 有权
标题翻译：金属氧化物膜形成方法和装置
公开(公告)号：US20100323512A1
公开(公告)日：2010-12-23
申请号：US12781934
申请日：2010-05-18
申请人： Kenji Matsumoto , Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
发明人： Kenji Matsumoto , Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
IPC分类号： H01L21/3205
CPC分类号： C23C16/40 , C23C16/45557 , C23C16/46 , H01L21/02175 , H01L21/02271 , H01L21/0231 , H01L21/02315 , H01L21/28556 , H01L21/31604
摘要： [Problems] There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness.[Means for Solving the Problems] A metal oxide film forming method includes a process (1) of supplying a metal source gas to a surface of a base before a temperature of the base reaches a film formation temperature of a metal oxide film; and a process (2) of setting the temperature of the base to be equal to or higher than the film formation temperature and forming the metal oxide film on the base by making a reaction between the metal source gas supplied to the surface of the base and residual moisture on the surface of the base.
摘要翻译： [问题]提供一种能够控制金属氧化物的膜厚度的金属氧化物膜形成方法，即使金属氧化物受到自限制的厚度。解决问题的手段金属氧化物膜形成方法包括：在基材的温度达到金属氧化物膜的成膜温度之前，将金属源气体供给到碱的表面的工序（1）以及将基材的温度设定为成膜温度以上的工序（2），并且通过使供给到基材表面的金属源气体和底部表面残留的水分。

3. 发明申请

US20120251721A1 DEVICE AND METHOD FOR FORMING FILM 失效
标题翻译：用于形成膜的装置和方法
公开(公告)号：US20120251721A1
公开(公告)日：2012-10-04
申请号：US13386307
申请日：2010-07-21
申请人： Kenji Matsumoto , Hidenori Miyoshi
发明人： Kenji Matsumoto , Hidenori Miyoshi
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： H01L21/0262 , C23C16/40 , C23C16/406 , C23C16/4404 , C23C16/45525 , H01L21/28556 , H01L21/68742 , H01L21/68785 , H01L21/76843 , H01L21/76855
摘要： The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.
摘要翻译：本发明涉及一种成膜设备，用于通过在被配置为排出空气的处理室内使用有机金属原料气体在待处理物体的表面上形成薄膜，其中疏水层安装在暴露于处理室内的大气的构件。

4. 发明申请

US20120135612A1 FILM FORMING METHOD, PRETREATMENT DEVICE, AND PROCESSING SYSTEM 有权
标题翻译：电影形成方法，预处理装置和处理系统
公开(公告)号：US20120135612A1
公开(公告)日：2012-05-31
申请号：US13378535
申请日：2010-06-16
申请人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
发明人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
IPC分类号： H01L21/31 , C23C16/44 , C23C16/02
CPC分类号： H01L21/76814 , C23C16/02 , C23C16/40 , H01L21/28556 , H01L21/3105 , H01L21/32051 , H01L21/76831 , H01L21/76844 , H01L21/76867
摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.
摘要翻译：公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜在亲水化绝缘层的表面上使用含锰材料气体的方法。因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

5. 发明授权

US08865590B2 Film forming method, pretreatment device, and processing system 有权
标题翻译：成膜方法，预处理装置和加工系统
公开(公告)号：US08865590B2
公开(公告)日：2014-10-21
申请号：US13378535
申请日：2010-06-16
申请人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
发明人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
IPC分类号： H01L21/00 , H01L21/768 , H01L21/3205 , H01L21/285 , H01L21/3105 , C23C16/40 , C23C16/02
CPC分类号： H01L21/76814 , C23C16/02 , C23C16/40 , H01L21/28556 , H01L21/3105 , H01L21/32051 , H01L21/76831 , H01L21/76844 , H01L21/76867
摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.
摘要翻译：公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜在亲水化绝缘层的表面上使用含锰材料气体的方法。因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

6. 发明授权

US08709541B2 Method for forming a film 失效
标题翻译：膜形成方法
公开(公告)号：US08709541B2
公开(公告)日：2014-04-29
申请号：US13386307
申请日：2010-07-21
申请人： Kenji Matsumoto , Hidenori Miyoshi
发明人： Kenji Matsumoto , Hidenori Miyoshi
IPC分类号： C23C16/18
CPC分类号： H01L21/0262 , C23C16/40 , C23C16/406 , C23C16/4404 , C23C16/45525 , H01L21/28556 , H01L21/68742 , H01L21/68785 , H01L21/76843 , H01L21/76855
摘要： A method for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air includes: hydrophobizing a surface of the processing chamber by introducing a hydrophobic gas into the processing chamber without the object to be processed accommodated in the processing chamber; and forming the thin film by introducing the organic metal raw material gas into the processing chamber with the object to be processed accommodated in the processing chamber.
摘要翻译：一种在构造成排出空气的处理室内通过使用有机金属原料气体在待处理物体的表面上形成薄膜的方法包括：通过将疏水性气体引入处理室来疏水处理室的表面没有被处理物体容纳在处理室中; 并且通过将有机金属原料气体引入到处理室中并将被处理物体容纳在处理室中来形成薄膜。

7. 发明授权

US08610353B2 Plasma generating apparatus, plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体发生装置，等离子体处理装置和等离子体处理方法
公开(公告)号：US08610353B2
公开(公告)日：2013-12-17
申请号：US13224879
申请日：2011-09-02
申请人： Hitoshi Itoh , Hidenori Miyoshi , Masaru Hori , Hirotaka Toyoda , Makoto Sekine
发明人： Hitoshi Itoh , Hidenori Miyoshi , Masaru Hori , Hirotaka Toyoda , Makoto Sekine
IPC分类号： H01J7/24 , H05B31/26
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32229 , H01J37/3244 , H05H2001/4622
摘要： An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots.
摘要翻译：一种用于产生等离子体的装置，包括：微波发生器，被配置为产生微波; 与微波发生器连接的波导，其中波导在微波的行进方向上伸长，并且具有在与行进方向垂直的方向上具有矩形截面的中空形状; 气体供给器，其连接到波导并将处理气体馈送到波导中; 以及天线单元，其是波导的一部分并将由微波产生的等离子体放电到外部，其中天线单元具有形成在构成天线单元的部分中的短边的壁上的一个或多个槽，通过微波在大气压下在槽中供给到波导管中的工艺气体，并将等离子体从槽中排出。

8. 发明授权

US08003535B2 Semiconductor device manufacturing method and target substrate processing system 有权
标题翻译：半导体器件制造方法和目标衬底处理系统
公开(公告)号：US08003535B2
公开(公告)日：2011-08-23
申请号：US12173350
申请日：2008-07-15
申请人： Hidenori Miyoshi , Kazuichi Hayashi
发明人： Hidenori Miyoshi , Kazuichi Hayashi
IPC分类号： H01L21/44
CPC分类号： H01L21/76814 , H01L21/02063 , Y10T29/41
摘要： A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.
摘要翻译：一种半导体器件的制造方法，包括使用有机酸性气体和氧化性气体从形成有凹槽的第二层间绝缘膜的表面除去铜沉积物并到达含铜电连接器构件。第二层间绝缘膜设置在设置有电连接器构件的第一层间绝缘膜上。该方法包括减少露出在第二层间绝缘膜的槽的底部的电连接器构件的表面; 在所述第二层间绝缘膜上形成阻挡层; 并且形成含铜导电膜以填充第二层间绝缘膜的槽。

9. 发明申请

US20090325393A1 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS 审中-公开
标题翻译：热处理方法和热处理装置
公开(公告)号：US20090325393A1
公开(公告)日：2009-12-31
申请号：US12375681
申请日：2007-07-18
申请人： Hidenori Miyoshi , Masaki Narushima
发明人： Hidenori Miyoshi , Masaki Narushima
IPC分类号： H01L21/26 , F24C1/00
CPC分类号： H01L21/76826 , C23C16/56 , H01L21/02068 , H01L21/3105 , H01L21/31058 , H01L21/67109 , H01L21/76828 , H01L21/76883
摘要： Disclosed is a heat treatment method including a step of placing a wafer W provided with a low-k film and a metal layer in a heat treatment furnace 41, a step of supplying gaseous acetic anhydride into the heat treatment furnace 41, while controlling the flow rate using a mass flow controller 44d, and a step of heating the wafer W in the heat treatment furnace 41 supplied with gaseous acetic anhydride by using a heater 41b provided in the heat treatment furnace 41.
摘要翻译：公开了一种热处理方法，包括将设置有低k膜和金属层的晶片W放置在热处理炉41中的步骤，将气态乙酸酐供给到热处理炉41中的同时控制流量使用质量流量控制器44d的速度，以及通过使用设置在热处理炉41中的加热器41b来加热供应有气态乙酸酐的热处理炉41中的晶片W的步骤。

10. 发明授权

US07556711B2 Semiconductor device manufacturing apparatus and operating method thereof 有权
标题翻译：半导体装置的制造装置及其动作方法
公开(公告)号：US07556711B2
公开(公告)日：2009-07-07
申请号：US11473159
申请日：2006-06-23
申请人： Hidenori Miyoshi
发明人： Hidenori Miyoshi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23F13/00 , B08B7/00 , C23F13/02 , H01L21/76814
摘要： A semiconductor device manufacturing apparatus is disclosed. The semiconductor device manufacturing apparatus applies a process to a semiconductor wafer by supplying a vapor of a corrosive liquid source to a processing container. An electrode is immersed in a storing container which stores the corrosive liquid source. The main material of the electrode is a metal whose ionization tendency is less than that of a metal of the storing container, and a protection current is applied between them by a DC power source. Or another electrode is used. The main material of the electrode is a metal whose ionization tendency is greater than that of the metal of the storing container and the metal of the electrode does not damage the semiconductor wafer. A protection current is applied between the storing container and the electrode by utilizing the difference of the ionization tendency between them.
摘要翻译：公开了一种半导体器件制造装置。半导体器件制造设备通过将腐蚀性液体源的蒸汽供应到处理容器来将工艺应用于半导体晶片。将电极浸渍在存储腐蚀性液体源的储存容器中。电极的主要材料是电离倾向小于储存容器的金属的金属，并且通过直流电源在它们之间施加保护电流。或者使用另一个电极。电极的主要材料是其电离倾向大于储存容器的金属的金属，并且电极的金属不会损坏半导体晶片。通过利用它们之间的电离倾向的差异，在存储容器和电极之间施加保护电流。

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