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1. 发明专利

JP2004266178A Wiring forming method 审中-公开
公开(公告)号：JP2004266178A
公开(公告)日：2004-09-24
申请号：JP2003056615
申请日：2003-03-04
申请人： Junichi Koike , Tokyo Electron Ltd , 淳一小池 , 東京エレクトロン株式会社
发明人： TEI MOTOICHI , SATO HIROSHI , MARUMO YOSHINORI , KOIKE JUNICHI
IPC分类号： H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide a method for forming wiring by which voids can be suppressed and the wiring can be made hard to break by suppressing a local stress concentration on a wired film.
SOLUTION: A wiring groove 2 is formed in an interlayer insulating film 1 on a wafer W, and then a barrier metal film 3, a seed film 4, and a wiring film 5 are formed on the interlayer insulating film 1. After formation of the wiring film 5, a protective film 6 is formed on the wiring film 5, and the film 5 is annealed. Thereafter, the protective film 6 and the wiring film 5 other than its part buried in the wiring groove 2 are removed.
COPYRIGHT: (C)2004,JPO&NCIPI

2. 发明授权

US08866140B2 Thin-film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08866140B2
公开(公告)日：2014-10-21
申请号：US13732719
申请日：2013-01-02
申请人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
发明人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
IPC分类号： H01L29/12 , H01L29/45 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/45 , H01L29/78693
摘要： Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the present invention includes a semiconductor layer 4 composed of oxide semiconductor, a source electrode 5 and a drain electrode 6 that are layers composed mainly of copper, and oxide reaction layers 22 provided between the semiconductor layer 4 and each of the source electrode 5 and drain electrode 6, and high-conductance layers 21 provided between the oxide reaction layers 22 and semiconductor layer 4.
摘要翻译：可以提高半导体层和电极之间的粘附性，通过增强这些元件之间的欧姆接触来实现薄膜晶体管的高速操作，可靠地防止电极表面的氧化，并且实现几乎没有加工的电极制造工艺脚步。本发明的薄膜晶体管10包括由氧化物半导体构成的半导体层4，主要由铜构成的层的源电极5和漏电极6以及设置在半导体层4和各半导体层4之间的氧化物反应层22。源电极5和漏电极6以及设置在氧化物反应层22和半导体层4之间的高电导层21。

3. 发明授权

US08372745B2 Semiconductor device, its manufacturing method, and sputtering target material for use in the method 有权
公开(公告)号：US08372745B2
公开(公告)日：2013-02-12
申请号：US12383562
申请日：2009-03-24
申请人： Junichi Koike
发明人： Junichi Koike
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , C23C14/185 , C23C14/3414 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor device provided on an insulating film with a wiring includes the insulating film containing silicon, a wiring main body formed of copper in a groove-like opening disposed in the insulating film, and a barrier layer formed between the wiring main body and the insulating film and made of an oxide containing Cu and Si and Mn.

4. 发明授权

US08304908B2 Semiconductor device having a multilevel interconnect structure and method for fabricating the same 失效
标题翻译：具有多层互连结构的半导体器件及其制造方法
公开(公告)号：US08304908B2
公开(公告)日：2012-11-06
申请号：US12382624
申请日：2009-03-19
申请人： Junichi Koike , Yoshito Fujii , Jun Iijima , Noriyoshi Shimizu , Kazuyoshi Maekawa , Koji Arita , Ryotaro Yagi , Masaki Yoshimaru
发明人： Junichi Koike , Yoshito Fujii , Jun Iijima , Noriyoshi Shimizu , Kazuyoshi Maekawa , Koji Arita , Ryotaro Yagi , Masaki Yoshimaru
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L27/10 , H01L29/74
CPC分类号： H01L21/76853 , H01L21/288 , H01L21/76834 , H01L21/76849 , H01L21/76856 , H01L21/76861 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A multilevel interconnect structure in a semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.
摘要翻译：半导体器件中的多层互连结构包括形成在半导体晶片上的第一绝缘层，形成在第一绝缘层上的Cu互连层，形成在Cu互连层上的第二绝缘层和形成在界面处的金属氧化物层在Cu互连层和第二绝缘层之间。金属氧化物层通过在Cu互连层上浸渍诸如Sn或Zn的金属，然后在氧化气氛中对镀层进行热处理而形成。

5. 发明申请

US20120267628A1 Liquid Crystal Display Device 有权
标题翻译：液晶显示装置
公开(公告)号：US20120267628A1
公开(公告)日：2012-10-25
申请号：US13453946
申请日：2012-04-23
申请人： Junichi Koike , Hideaki Kawakami
发明人： Junichi Koike , Hideaki Kawakami
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： G02F1/1368 , G02F1/134363 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L29/458 , H01L29/786
摘要： In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
摘要翻译：在具有薄膜晶体管（TFT）的液晶显示器（LCD）装置中，TFT包括源电极，漏电极和半导体层。源电极和漏电极中的至少一个包括包括铜的第一层和形成氧化物层并覆盖第一层的第二层。当在半导体层和所述源电极或漏电极之间施加电压时，半导体层与包括所述第一和第二层的所述源电极或漏电极具有基本线性的电流 - 电压关系。

6. 发明授权

US08188599B2 Semiconductor device, its manufacturing method, and sputtering target material for use in the method 有权
标题翻译：半导体器件，其制造方法和用于该方法的溅射靶材料
公开(公告)号：US08188599B2
公开(公告)日：2012-05-29
申请号：US11912393
申请日：2007-02-27
申请人： Junichi Koike
发明人： Junichi Koike
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： C23C14/08 , C23C14/027 , C23C14/046 , C23C14/3414 , C23C14/5806 , H01L21/2855 , H01L21/76831 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor device 1 provided on an insulating film 3 with a wiring includes the insulating film 3 containing silicon (Si), a wiring main body 8 formed of copper (Cu) in a groove-like opening 4 disposed in the insulating film 3, and a barrier layer 7 formed between the wiring main body 8 and the insulating film 3 and made of an oxide containing Cu and Si and Mn in such a manner that the atomic concentration of Cu decreases monotonously from the wiring main body 8 side toward the insulating film 3 side, the atomic concentration of Si decreases monotonously from the insulating film 3 side toward the wiring main body 8 side, and the atomic concentration of Mn is maximized in the region in which the atomic concentration of Cu and the atomic concentration of Si are approximately equal.
摘要翻译：半导体器件能够使阻挡层完全获得阻止Cu从布线主体的扩散和Si从绝缘膜扩散的阻挡性，增强了阻挡层和绝缘膜的粘附性，并且操作的可靠性优异在很长一段时间内。在本发明中，在具有配线的绝缘膜3上设置的半导体装置1包括含有硅（Si）的绝缘膜3，在铜箔（Cu）上形成的布线主体8，该布线主体8设置在绝缘膜薄膜3和阻挡层7，其形成在布线主体8和绝缘膜3之间并且由包含Cu和Si和Mn的氧化物构成，使得Cu的原子浓度从布线主体8侧单调减小朝向绝缘膜3侧，Si的原子浓度从绝缘膜3侧朝向布线主体8侧单调减少，并且在Cu的原子浓度和原子浓度的区域中Mn的原子浓度最大化的Si近似相等。

7. 发明授权

US07940361B2 Copper alloy and liquid-crystal display device 有权
标题翻译：铜合金和液晶显示装置
公开(公告)号：US07940361B2
公开(公告)日：2011-05-10
申请号：US12803943
申请日：2010-07-09
申请人： Junichi Koike
发明人： Junichi Koike
IPC分类号： G02F1/1343 , G02F1/13 , H01L21/00
CPC分类号： C22C9/05 , C03C17/3649 , C03C17/3655 , C03C17/3671 , C03C2217/948 , C23C8/10 , C23C14/165 , C23C14/185 , C23C14/3414 , G02F1/136286 , G02F1/1368 , G02F2001/136295 , H01L21/76834 , H01L21/76852 , H01L21/76867 , H01L23/53233 , H01L23/53238 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A liquid crystal display device including, a pair of substrates, a gate electrode of a thin film transistor (TFT) formed on one of the substrates, and a wiring layer connected to the gate electrode or an electrode of the thin film transistor, wherein at least a part of the gate electrode or a part the wiring layer is formed by a layer structured by a pure copper layer and a Cu—Mn alloy layer including Mn, wherein a concentration of Mn in the Cu—Mn alloy layer is more than 0.1 and not more than 20 atomic percentage within a solubility limit of Mn in the copper, and wherein a boundary surface between the Cu—Mn alloy layer and said one of the substrate includes an oxide layer having a Mn oxide layer.
摘要翻译：一种液晶显示装置，包括：一对基板，形成在其中一个基板上的薄膜晶体管（TFT）的栅电极，以及连接到所述栅电极或所述薄膜晶体管的电极的布线层，其中，栅电极的至少一部分或由纯铜层构成的层和包含Mn的Cu-Mn合金层形成的布线层的一部分，其中Cu-Mn合金层中的Mn浓度大于0.1 并且在铜的溶解度极限内不大于20原子百分比，并且其中，所述Cu-Mn合金层和所述一个基板之间的边界面包括具有Mn氧化物层的氧化物层。

8. 发明授权

US07782413B2 Liquid crystal display device and manufacturing method therefor 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07782413B2
公开(公告)日：2010-08-24
申请号：US11801304
申请日：2007-05-09
申请人： Junichi Koike , Hideaki Kawakami
发明人： Junichi Koike , Hideaki Kawakami
IPC分类号： G02F1/135
CPC分类号： H01L29/458 , G02F1/1368 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L27/3276 , H01L51/0512 , H01L51/105
摘要： The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.
摘要翻译：本发明包括具有对半导体层或像素电极具有高粘附性的氧化膜从而防止布线材料等的氧化的液晶显示装置，并且包括具有高导电性的源电极和漏极，以及其制造方法。在本发明的一个实施例中，液晶显示装置具有TFT基板的TFT电极，其中源电极或漏电极包括主要为铜的层和覆盖该层的外部的氧化物。此外，在本发明中，半导体层或像素电极以及源电极或漏电极在TFT电极中是欧姆接触的。

9. 发明申请

US20100201901A1 Liquid crystal display device and manufacturing method therefor 有权
公开(公告)号：US20100201901A1
公开(公告)日：2010-08-12
申请号：US12799163
申请日：2010-04-20
申请人： Junichi Koike , Hideaki Kawakami
发明人： Junichi Koike , Hideaki Kawakami
IPC分类号： G02F1/1368
CPC分类号： H01L29/458 , G02F1/1368 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L27/3276 , H01L51/0512 , H01L51/105
摘要： The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.

10. 发明申请

US20100155952A1 Copper interconnection structures and semiconductor devices 有权
标题翻译：铜互连结构和半导体器件
公开(公告)号：US20100155952A1
公开(公告)日：2010-06-24
申请号：US12589949
申请日：2009-10-30
申请人： Junichi Koike , Akihiro Shibatomi
发明人： Junichi Koike , Akihiro Shibatomi
IPC分类号： H01L23/532 , H05K1/09
CPC分类号： H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/12044 , Y10T29/49163 , Y10T29/49165 , Y10T29/49204 , H01L2924/00
摘要： A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer and a barrier layer including a metal element and copper, formed between the insulating layer and the interconnection body. An atomic concentration of the metal element in the barrier layer is accumulated toward an outer surface of the barrier layer facing the insulating layer, and an atomic concentration of copper in the barrier layer is accumulated toward an inner surface of the barrier layer facing the interconnection body. The inner surface of the barrier layer comprises copper surface orientation of {111} and {200}, and an intensity of X-ray diffraction peak from the inner surface of the barrier layer is stronger for the {111} peak than for the {200} peak.
摘要翻译：铜互连结构包括绝缘层，在绝缘层上设置的开口中包括铜的互连体和在绝缘层和互连体之间形成的包括金属元素和铜的阻挡层。阻挡层中的金属元素的原子浓度朝着与绝缘层相对的阻挡层的外表面积聚，并且阻挡层中的铜的原子浓度朝向互连体的面向阻挡层的内表面积聚。阻挡层的内表面包含{111}和{200}的铜表面取向，并且对于{111}峰，来自阻挡层的内表面的X射线衍射峰的强度比{200 }高峰。

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