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    • 3. 发明申请
    • METHOD FOR PROTECTING SEMICONDUCTOR WAFER AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
    • 用于保护半导体晶体管的方法和用于生产半导体器件的方法
    • US20100184297A1
    • 2010-07-22
    • US12665529
    • 2008-06-20
    • Mikio TakagiSeiichi Takahashi
    • Mikio TakagiSeiichi Takahashi
    • H01L21/306
    • H01L21/02063H01J37/3244H01J37/32449H01L21/67069
    • [Task] In a proposed protection method, re-oxidation of a semiconductor wafer is prevented. The method is appropriate for fine patterned semiconductor device. A wafer is dry etched and is subjected to a next step of forming an electrode material film. The dry-etched wafer is maintained not re-oxidized until the next step. The dry etching reaction products are appropriately removed.[Means for Solution] A wafer, on which the dry etching reaction products remain, is protected by the reaction products. The wafer is held in an inert gas protective atmosphere having a pressure of 50 Pa or more and an atmospheric pressure or less, or is held in air equivalent to the air of a clean room or in a gas-mixture atmosphere of said air and an inert gas. The reaction products are decomposed and removed by heating immediately before the formation of an electrode-material film.
    • [任务]在所提出的保护方法中,防止了半导体晶片的再氧化。 该方法适用于精细图案化半导体器件。 将晶片干蚀刻,并进行形成电极材料膜的下一步骤。 干蚀刻的晶片保持不再氧化直到下一步骤。 适当地除去干蚀刻反应产物。 [解决方案]残留有干蚀刻反应产物的晶片被反应产物保护。 将晶片保持在压力为50Pa以上且大气压以下的惰性气体保护气氛中,或者保持在与洁净室的空气或空气的气体混合气氛相当的空气中, 惰性气体。 反应产物在形成电极材料膜之前立即加热分解和除去。
    • 5. 发明授权
    • Method of producing a semiconductor device in a heating furnace having a reaction tube with a temperature-equalizing zone
    • 在具有温度均衡区的反应管的加热炉中制造半导体器件的方法
    • US06248672B1
    • 2001-06-19
    • US09310760
    • 1999-05-13
    • Mikio Takagi
    • Mikio Takagi
    • C23C16455
    • C23C16/45521C23C16/4401C23C16/4412C23C16/455C23C16/45591C23C16/4584H01L21/67017H01L21/67109H01L21/67115
    • In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert gas is exhausted through the annular channel formed between the inner tube and the outer tube at a bottom portion of the vertical reaction-tube; and, a wafer is heat treated in the vertical reaction-tube by means of a heating furnace. In order to decrease the number and size of the particles, the wafer is displaced upward and then positioned at a level substantially the same as or above the top end of the inner tube, and the reaction gas is introduced into the vertical reaction-tube at or above the position of the wafer. Furthermore, the inert gas is caused to flow from a bottom portion of the inner tube toward the wafer positioned as above. As a result, inflow of the reaction gas into the inner tube is impeded, and the generation of particles there can be lessened.
    • 在使用双管反应器的半导体器件的制造方法中,将惰性气体供给到垂直反应管中,将反应气体引入到垂直反应管中,惰性气体通过内部形成的环状通路排出 管和外管在垂直反应管的底部; 并且通过加热炉在垂直反应管中对晶片进行热处理。 为了减小颗粒的数量和尺寸,将晶片向上移位,然后定位在与内管的顶端基本相同或高于内管的水平上,并将反应气体引入垂直反应管中 或高于晶片的位置。 此外,使惰性气体从内管的底部朝向如上定位的晶片流动。 结果,阻止反应气体进入内管,并且可以减少颗粒的产生。