会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Dynamic random access memory with isolated well structure
    • 具有隔离井结构的动态随机存取存储器
    • US5281842A
    • 1994-01-25
    • US722164
    • 1991-06-27
    • Kenichi YasudaMakoto SuwaShigeru Mori
    • Kenichi YasudaMakoto SuwaShigeru Mori
    • H01L27/02H01L27/105H01L27/108
    • H01L27/10805H01L27/0218H01L27/105
    • A semiconductor memory device includes a first conductivity type well in a first conductivity type semiconductor substrate surrounded by a second conductivity type well, one of a memory cell and an external input circuit arranged on the first conductivity type well and the other disposed outside the second conductivity type well. A predetermined power supply voltage is applied to the second conductivity type well and the first conductivity type well is connected to ground. In the structure, charge carriers injected from the external input circuit are absorbed in the second conductivity type well. As a result, the charge carriers are prevented from reaching the memory cell and destroying data stored therein. Therefore, it is possible to miniaturize transistors and increase integration density of dynamic random access memory devices without degrading the source to drain dielectric strength.
    • 半导体存储器件包括第一导电类型的半导体衬底中的第一导电类型的阱,该第一导电类型的半导体衬底由第二导电类型阱围绕,存储单元和布置在第一导电类型阱上的外部输入电路中的一个, 类型很好。 对第二导电类型阱施加预定的电源电压,并且将第一导电类型阱连接到地。 在该结构中,从外部输入电路注入的电荷载流子被吸收在第二导电型阱中。 结果,防止电荷载体到达存储单元并破坏其中存储的数据。 因此,可以使晶体管小型化并提高动态随机存取存储器件的集成密度,而不会使源极降低介电强度。
    • 2. 再颁专利
    • Dynamic random access memory with isolated well structure
    • 具有隔离井结构的动态随机存取存储器
    • USRE35613E
    • 1997-09-23
    • US496569
    • 1995-06-29
    • Kenichi YasudaMakoto SuwaShigeru Mori
    • Kenichi YasudaMakoto SuwaShigeru Mori
    • H01L27/02H01L27/105H01L27/108
    • H01L27/10805H01L27/0218H01L27/105
    • A semiconductor memory device includes a first conductivity type well in a first conductivity type semiconductor substrate surrounded by a second conductivity type well, one of a memory cell and an external input circuit arranged on the first conductivity type well and the other disposed outside the second conductivity type well. A predetermined power supply voltage is applied to the second conductivity type well and the first conductivity type well is connected to ground. In the structure, charge carriers injected from the external input circuit are absorbed in the second conductivity type well. As a result, the charge carriers are prevented from reaching the memory cell and destroying data stored therein. Therefore, it is possible to miniaturize transistors and increase integration density of dynamic random access memory devices without degrading the source to drain dielectric strength.
    • 半导体存储器件包括第一导电类型的半导体衬底中的第一导电类型的阱,该第一导电类型的半导体衬底由第二导电类型阱围绕,存储单元和布置在第一导电类型阱上的外部输入电路之一,另一个位于第二导电类型 类型很好。 对第二导电类型阱施加预定的电源电压,并且将第一导电类型阱连接到地。 在该结构中,从外部输入电路注入的电荷载流子被吸收在第二导电型阱中。 结果,防止电荷载体到达存储单元并破坏其中存储的数据。 因此,可以使晶体管小型化并提高动态随机存取存储器件的集成密度,而不会使源极降低介电强度。
    • 6. 发明授权
    • Rolling mill and rolling method
    • 轧机和轧制方法
    • US5406817A
    • 1995-04-18
    • US935421
    • 1992-08-26
    • Yoshio TakakuraToshiyuki KajiwaraHiroyuki ShiraiwaKenichi YasudaYukio Hirama
    • Yoshio TakakuraToshiyuki KajiwaraHiroyuki ShiraiwaKenichi YasudaYukio Hirama
    • B21B13/14B21B29/00B21B37/38B21B37/08
    • B21B37/38B21B13/145
    • A rolling mill has a work roll and a back-up roll for supporting the work roll vertically and driving it. A plurality of horizontal support rollers contact the work roll at barrel diameter outside the rolling region and at a both horizontal sides of the work roll and act to fix the position of the work roll in both horizontal directions during rolling and to oppose horizontal rolling forces. In order to reduce the bending of the work roll during rolling, there are provided means for applying horizontal counterbending forces to the work roll comprising members e.g. rollers, contacting the work roll at locations axially further from the rolling region than the support rollers and actuator means for urging the members against the work roll. The counterbending forces being in the same direction as the net horizontal force applied to said work roll by said back-up roll and the material being rolled. Preferably at least one condition of said work roll is sensed during rolling, and there are control means acting during rolling to control the counterbending forces in dependence on the sensed condition.
    • 轧机具有工作辊和支撑辊,用于垂直地支撑工作辊并将其驱动。 多个水平支撑辊在滚动区域外侧和工作辊的两个水平边缘处以筒体直径接触工作辊,并且用于在轧制期间在两个水平方向上固定工作辊的位置并且抵抗水平轧制力。 为了减少轧制过程中的工作辊的弯曲,提供了用于将水平的反作用力施加到包括构件的工作辊的装置。 辊子,在与滚动区域相比轴向更远的位置处的工作辊与支撑辊和致动器装置接触,用于将构件推向工作辊。 所述反作用力与由所述支承辊和被轧制材料施加到所述工作辊的净水平力处于相同的方向。 优选地,在轧制期间感测到所述工作轧辊的至少一个状态,并且存在在轧制期间作用的控制装置,以根据感测到的状况来控制平衡力。
    • 7. 发明授权
    • Laser device with wavelength stabilization control and method of
operating the same
    • 具有波长稳定控制的激光装置及其操作方法
    • US4947398A
    • 1990-08-07
    • US372834
    • 1989-06-29
    • Kenichi YasudaHitoshi WakataHajime Nakatani
    • Kenichi YasudaHitoshi WakataHajime Nakatani
    • H01S3/136H01S3/137H01S3/225
    • H01S3/136H01S3/137H01S3/225
    • Methods of controlling the wavelength and output power of a laser device with two intracavity etalons are disclosed, together with a wavelength monitor capable of detecting sidebands. A method is characterized by the usage of hot/cold parameter K which takes two values 0 and 1 indicating the cold and hot state of the device, respectively. The parameter K, which is reset to 0 at the start, is set to 1 when the laser beam is stabilized; it is reset to 0, whenever the lasing pause exceeds a predetermined time length. Preparatory starting steps are performed or omitted at the start, depending on the value of K. Another method is characterized by the adjustment of the intracavity etalons during the lasing pauses, in accordance with exponential functions with thermal time constants. The sideband detecting wavelength monitor comprises a single etalon whose free spectal region FSRm is selected with respect to that, FSR.sub.2, of the fine tuning intracavity etalon in such a manner that the interference fringes of the sidebands formed by the monitor etalon are distinct from each other and from those of the central wavelength .lambda..sub.0. Namely, when i is the integer which is associated with a sideband wavelength .lambda..sub.S via the equation: .lambda..sub.S =.lambda..sub.0 +i.times.FSR.sub.2, the free spectral regions FSR.sub.2 and FSRm are selected in such a manner that the apparent wavelength differences: R=i.multidot.FSR.sub.2 +j.multidot.FSRm between the central wavelength .lambda..sub.0 and the sideband wavelengths .lambda..sub.S, wherein j is an integer which minimizes the value of R for each i, are different from zero and from each other.
    • 公开了具有两个腔内标准具的激光装置的波长和输出功率的控制方法,以及能够检测边带的波长监视器。 一种方法的特征在于使用热/冷参数K,其分别表示设备的冷热状态的两个值0和1。 当激光束稳定时,启动时复位为0的参数K被设置为1; 每当激光暂停超过预定时间长度时,它将重置为0。 准备启动步骤在开始时执行或省略,取决于K的值。另一种方法的特征在于根据具有热时间常数的指数函数在激光暂停期间调节腔内标准具。 该边带检测波长监视器包括单个标准具,其相对于微调腔内标准具的FSR2选择其自由光谱区域FSRm,使得由监视器标准具形成的边带的干涉条纹彼此不同 以及中心波长λ0的那些。即,当i是通过以下等式与边带波长λS相关联的整数时:λS =λ0 + ixFSR2,在这样的一个中选择自由光谱区域FSR2和FSRm 在中心波长λ0与边带波长λS之间的表观波长差:R = ixFSR2 + jxFSRm,其中j是使每个i的R值最小的整数不同于零和彼此。