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    • 5. 发明授权
    • Porous membrane and method for preparing the same
    • 多孔膜及其制备方法
    • US5202025A
    • 1993-04-13
    • US821844
    • 1992-01-14
    • Makoto OnishiKenichi Shimura
    • Makoto OnishiKenichi Shimura
    • B01D67/00
    • B01D67/0093B01D67/0027B01D2323/38B01D2325/32B01D2325/36
    • In the method for preparing a porous membrane, a polymer having a low glass transition temperature is held on the surface of a porous membrane substrate and then drawing is conducted. Accordingly, the drawing at a high draw ratio can be conducted to which the substrate as such can not be subjected. As a result, not only an excellent porous membrane having an enlarged pore size and an increased void volume can be obtained but also it is possible to control the pore size and the void volume in wide ranges. Further, a hydrophilic polymer having a glass transition temperature of not more than 300 K is formed on the surface of pores of a porous membrane substrate by graft polymerization so as to bond the hydrophilic polymer on the substrate by a covalent bond. Therefore, it is possible to provide a porous membrane excellent in unbrittleness and inhibiting elution in an environmental liquid or the like.
    • 在制备多孔膜的方法中,将具有低玻璃化转变温度的聚合物保持在多孔膜基材的表面上,然后进行拉伸。 因此,可以进行基板不能经受的高拉伸比的拉伸。 结果,不仅可以获得具有扩大的孔径和增加的空隙体积的优异的多孔膜,而且可以在宽范围内控制孔径和空隙体积。 此外,通过接枝聚合在多孔膜基材的孔的表面上形成玻璃化转变温度不超过300K的亲水性聚合物,以通过共价键将亲水性聚合物键合在基材上。 因此,可以提供在环境液体等中不易脆性和抑制洗脱优异的多孔膜。
    • 7. 发明授权
    • Magnetic random access memory
    • 磁性随机存取存储器
    • US07477538B2
    • 2009-01-13
    • US10561213
    • 2004-06-16
    • Kenichi ShimuraKuniko Kikuta
    • Kenichi ShimuraKuniko Kikuta
    • G11C11/00
    • H01L27/222G11C11/16
    • A technique for reducing influences of the bias magnetic field developed by yokes used for concentrating the magnetic field on magnetoresistance elements, on MRAM operations. An MRAM is composed of a plurality of magnetoresistance elements having magnetic anisotropy in a first direction; a wiring extended in a second direction different from the first direction, through which a write current flows for writing data into the magnetoresistance elements; and a yoke layer formed of ferromagnetic material, extended along the second direction, and covering at least a portion of a surface of the wiring. The plurality of magnetoresistance elements include a first magnetoresistance element, and a second magnetoresistance element of which the distance from an end of the yoke layer is further than that of the first magnetoresistance element. The first magnetoresistance element has a magnetic anisotropy stronger than that of the second magnetoresistance element.
    • 在MRAM操作中减小用于将磁场集中在磁阻元件上的磁轭产生的偏磁场的影响的技术。 MRAM由在第一方向上具有磁各向异性的多个磁阻元件构成; 沿与第一方向不同的第二方向延伸的布线,写入电流通过该布线将数据写入磁阻元件; 以及由铁磁材料形成的轭层,沿着第二方向延伸,并覆盖布线表面的至少一部分。 多个磁阻元件包括第一磁阻元件和第二磁阻元件,其与轭层的端部的距离比第一磁阻元件的距离更远。 第一磁阻元件具有比第二磁阻元件更强的磁各向异性。
    • 8. 发明申请
    • Magnetic random access memory
    • 磁性随机存取存储器
    • US20060132987A1
    • 2006-06-22
    • US10561213
    • 2004-06-16
    • Kenichi ShimuraKuniko Kikuta
    • Kenichi ShimuraKuniko Kikuta
    • G11B5/33
    • H01L27/222G11C11/16
    • The present invention provides a technique for reducing influences of the bias magnetic field developed by yokes used for concentrating the magnetic field on magnetoresistance elements, on MRAM operations. An MRAM according to the present invention is composed of a plurality of magnetoresistance elements having magnetic anisotropy in a first direction; a wiring extended in a second direction different from the first direction, through which a write current is flown for writing data into the magnetoresistance elements; and a yoke layer formed of ferromagnetic material, extended along the second direction, and covering at least a portion of a surface of the wiring. The plurality of magnetoresistance elements include a first magnetoresistance element, and a second magnetoresistance element of which the distance from an end of the yoke layer is further than that of the first magnetoresistance element. The first magnetoresistance element has a magnetic anisotropy stronger than that of the second magnetoresistance element.
    • 本发明提供了一种用于减小用于磁场集中的磁轭产生的偏磁场对磁阻元件的影响的技术。 根据本发明的MRAM由在第一方向上具有磁各向异性的多个磁阻元件构成; 沿与第一方向不同的第二方向延伸的布线,通过该布线写入电流以将数据写入磁阻元件; 以及由铁磁材料形成的轭层,沿着第二方向延伸,并覆盖布线表面的至少一部分。 多个磁阻元件包括第一磁阻元件和第二磁阻元件,其与轭层的端部的距离比第一磁阻元件的距离更远。 第一磁阻元件具有比第二磁阻元件更强的磁各向异性。
    • 9. 发明授权
    • Artificial cardiopulmonary circuit system
    • 人工心肺电路系统
    • US06994824B2
    • 2006-02-07
    • US10180321
    • 2002-06-27
    • Akira MochizukiKenichi ShimuraTakao Anzai
    • Akira MochizukiKenichi ShimuraTakao Anzai
    • A61M1/14A61M37/00A61M1/34B01D39/00
    • B01D67/0088A61M1/1625A61M1/1698B01D63/021
    • To provide an artificial cardiopulmonary circuit system having high heat resistance and excellent blood compatibility. The artificial cardiopulmonary circuit system includes a hollow fiber membrane oxygenator including a plurality of porous hollow fiber membranes for gas exchange having a blood contact part that contacts blood on one side thereof and a gas contact part that contacts a gas on the other side thereof, and a housing that contains the hollow fiber membranes therein. At least a portion of the blood contact part of the hollow fiber membrane oxygenator is coated with a polymer comprising a repeating unit represented by the following general formula (1) as a main structural component and having a viscosity at 65° C. of 5,000 poise (500 Pa·s) [Chemical Formula 4] (Wherein R1 is hydrogen or a methyl group, R2 is an alkylene group having 1 to 4 carbon atoms, and R3 is an alkyl group having 1 to 4 carbon atoms).
    • 提供具有高耐热性和优异血液相容性的人造心肺电路系统。 人造心肺回路系统包括中空纤维膜氧合器,其包括多个用于气体交换的多孔中空纤维膜,其具有与其一侧接触血液的血液接触部分和与其另一侧接触气体的气体接触部分,以及 其中包含中空纤维膜的壳体。 中空纤维膜氧合器的血液接触部分的至少一部分涂覆有包含由以下通式(1)表示的重复单元作为主要结构组分并且在65℃下的粘度为5000泊的聚合物 (500 Pa&#xb