专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06449300B1 Surface-emitting laser 失效
标题翻译：表面发射激光
公开(公告)号：US06449300B1
公开(公告)日：2002-09-10
申请号：US09517182
申请日：2000-03-02
申请人： Kenichi Iga , Nobuhiko Nishiyama , Fumio Koyama
发明人： Kenichi Iga , Nobuhiko Nishiyama , Fumio Koyama
IPC分类号： H01S500
CPC分类号： H01S5/18333 , H01S5/0207 , H01S5/06226 , H01S5/18311 , H01S5/18341 , H01S5/18369
摘要： A surface-emitting laser in which a first distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, an active layer and a second distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, are formed on a semiconductor substrate, successively, including a current stenosed layer having an oxidized area in a remote junction surface therein between at least one of the first and the second distributed Bragg reflectors and the active layer, and plural capacitance-reducing layers, each layer having a smaller oxidized area than the oxidized area in a remote junction surface constituting the current stenosed layer, at least one of the first and the second distributed Bragg reflectors, the plural capacitance-reducing layers, the current stenosed layer and the active layer being arranged successively, one of the first and the second distributed Bragg reflectors constituting a first conductive type Bragg reflector, the other constituting a second conductive type Bragg reflector.
摘要翻译：一种表面发射激光器，其中由由两种薄膜构成的交替层叠结构的第一分布式布拉格反射器，由两种薄膜制成的交替层叠结构的有源层和第二分布式布拉格反射器组成，形成在半导体基板上，依次包括在第一和第二分布式布拉格反射器和有源层中的至少一个之间的远程接合表面中具有氧化区域的电流狭缝层和多个电容减小层，每个层在构成当前狭窄层的远程接合面中具有比氧化区域更小的氧化面积，第一和第二分布布拉格反射器，多个电容减小层，电流狭窄层和有源层中的至少一个被布置第一和第二分布布拉格反射器中的一个构成第一导电类型的布拉格反射器反射器，另一个构成第二导电型布拉格反射器。

2. 发明申请

US20170213932A1 COMPOUND PHOTOVOLTAIC CELL 审中-公开
公开(公告)号：US20170213932A1
公开(公告)日：2017-07-27
申请号：US15483633
申请日：2017-04-10
申请人： Shunichi SATO , Nobuhiko Nishiyama
发明人： Shunichi SATO , Nobuhiko Nishiyama
IPC分类号： H01L31/0725 , H01L31/0296 , H01L31/0693 , H01L31/0735 , H01L31/0304 , H01L31/0687 , H01L31/05 , H01L31/18
CPC分类号： H01L31/0725 , H01L31/02966 , H01L31/03046 , H01L31/0512 , H01L31/0687 , H01L31/0693 , H01L31/0735 , H01L31/1844 , Y02E10/544
摘要： A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.

3. 发明授权

US07072376B2 Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom 有权
标题翻译：制造基于InP的垂直腔表面发射激光器的方法及其制造的装置
公开(公告)号：US07072376B2
公开(公告)日：2006-07-04
申请号：US10944649
申请日：2004-09-16
申请人： Catherine G Caneau , Benjamin L Hall , Nobuhiko Nishiyama , Chung-En Zah
发明人： Catherine G Caneau , Benjamin L Hall , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306 , H01S5/34313
摘要： A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96. The manufacture of the high index layers with such a band gap creates a sufficient difference in the indices of refraction of the alternating layers in the DBR, while keeping optical absorption low to maintain the reflectivity at least up to the desired maximum temperature, and obviates the need for using a DBR either bonded to the InP substrate, or grown metamorphically on it.
摘要翻译：一种制造具有高反射率分布布拉格反射器（DBR）的磷化铟基垂直腔表面发射激光器（VCSEL）的方法，其特别适用于发射中心波长约1.30微米的光。该方法包括以下步骤：选择特定的工作波长，确定对应于所选择的工作波长的光子能量，以摄氏度选择最大工作温度，以及制造分布式布拉格反射器（DBR）的至少一半的高折射率层，的来自AlGaInAs的VCSEL或可以在InP衬底上外延生长的其它材料，以具有等于或大于光子能量（以毫电子伏特）加上最大工作温度加和110之和的带隙除以1.96。具有这种带隙的高折射率层的制造在DBR中的交替层的折射率产生足够的差异，同时保持光吸收低以保持反射率至少达到期望的最高温度，并且消除需要使用结合到InP底物的DBR，或者在其上变质生长。

4. 发明授权

US09450138B2 Photovoltaic cell and photovoltaic cell manufacturing method 有权
标题翻译：光伏电池和光伏电池的制造方法
公开(公告)号：US09450138B2
公开(公告)日：2016-09-20
申请号：US14443480
申请日：2013-11-25
申请人： Shunichi Sato , Nobuhiko Nishiyama
发明人： Shunichi Sato , Nobuhiko Nishiyama
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0687 , H01L31/0352 , H01L31/043
CPC分类号： H01L31/1836 , H01L31/035236 , H01L31/043 , H01L31/0687 , H01L31/06875 , H01L31/1804 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.
摘要翻译：光电池制造方法包括：在第一硅衬底上沉积用于进行晶格弛豫的第一缓冲层; 在第一缓冲层上沉积第一光电转换单元，第一光电转换单元由具有pn结的化合物半导体形成，第一光电转换单元的晶格常数高于硅的晶格常数; 将支撑基板连接到第一光电转换单元以形成第一层叠体; 以及从第一层叠体移除第一缓冲层和第一硅衬底。

5. 发明授权

US07502394B2 System and method for modulating a semiconductor laser 失效
标题翻译：用于调制半导体激光器的系统和方法
公开(公告)号：US07502394B2
公开(公告)日：2009-03-10
申请号：US11298367
申请日：2005-12-08
申请人： Martin H Hu , Nobuhiko Nishiyama , Chung-En Zah
发明人： Martin H Hu , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S3/10 , H01S3/13 , H01S3/00
CPC分类号： H04N9/3129 , H01S5/005 , H01S5/0092 , H01S5/06213 , H01S5/06251 , H01S5/06253 , H01S5/06256 , H04B10/54
摘要： Both a system and method are provided for modulating the intensity of an output beam generated by semiconductor laser. The exemplary system includes a source of pulsating current connected to the laser that generates a pulsating beam of laser light, an external modulator having an input that receives the pulsating beam, and an output controlled by pulsating control signal, wherein the output beam transmitted by the external modulator output is modulated by changing a relative phase angle between the pulsating current powering the laser, and the control signal of the external modulator over time. The external modulator may be an intensity-type modulator whose output is controlled by a gate signal having a constant phase, and the source of pulsating current powering the laser may be variable phase in order to modulate the output beam with an external modulator having a simple structure. Both the system and method are advantageously compatible with DFB lasers, and avoid wavelength drift and the consequent thermally induced patterning effect by powering the laser with a pulsating current having a constant duty cycle.
摘要翻译：提供了一种用于调制由半导体激光器产生的输出光束的强度的系统和方法。示例性系统包括连接到激光器的脉冲电流源，其产生脉冲激光束，外部调制器，其具有接收脉动光束的输入端，以及由脉动控制信号控制的输出，其中由通过改变为激光供电的脉动电流与外部调制器的控制信号之间的相对相位角随时间而调制外部调制器输出。外部调制器可以是强度型调制器，其输出由具有恒定相位的栅极信号控制，为激光供电的脉动电流源可以是可变相位，以便用具有简单的外部调制器调制输出光束结构体。系统和方法都有利地与DFB激光器兼容，并且通过用具有恒定占空比的脉动电流为激光器供电来避免波长漂移和随之而来的热诱导图案化效应。

6. 发明申请

US20070133629A1 Method and device for performing DBR laser wavelength modulation free of thermal effect 失效
标题翻译：用于执行无热效应的DBR激光波长调制的方法和装置
公开(公告)号：US20070133629A1
公开(公告)日：2007-06-14
申请号：US11297897
申请日：2005-12-08
申请人： Martin Hu , Nobuhiko Nishiyama , Chung-En Zah
发明人： Martin Hu , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S3/10 , H01S5/00 , H01S3/04
CPC分类号： H01S5/06256 , H01S5/0092 , H01S5/06253 , H04N9/3129
摘要： The present invention is directed to a method and system for providing a three-level current scheme to a semiconductor laser to control beam wavelength and laser temperature. A first current is received into a gain section of the semiconductor laser and at least one other current is received into a DBR and/or phase section of the semiconductor laser. This other current(s) is pulse-width modulated based upon a required temperature value. An output beam is generated by the semiconductor laser based upon the received first current and the received pulse-width modulated current(s).
摘要翻译：本发明涉及一种用于向半导体激光器提供三电平电流方案以控制光束波长和激光器温度的方法和系统。第一电流被接收到半导体激光器的增益部分中，并且至少一个其它电流被接收到半导体激光器的DBR和/或相位部分中。基于所需的温度值对其它电流进行脉冲宽度调制。基于所接收的第一电流和所接收的脉冲宽度调制电流，由半导体激光器产生输出光束。

7. 发明申请

US20060159139A1 System and method for modulating a semiconductor laser 失效
公开(公告)号：US20060159139A1
公开(公告)日：2006-07-20
申请号：US11298367
申请日：2005-12-08
申请人： Martin Hu , Nobuhiko Nishiyama , Chung-En Zah
发明人： Martin Hu , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S3/10
CPC分类号： H04N9/3129 , H01S5/005 , H01S5/0092 , H01S5/06213 , H01S5/06251 , H01S5/06253 , H01S5/06256 , H04B10/54
摘要： Both a system and method are provided for modulating the intensity of an output beam generated by semiconductor laser. The exemplary system includes a source of pulsating current connected to the laser that generates a pulsating beam of laser light, an external modulator having an input that receives the pulsating beam, and an output controlled by pulsating control signal, wherein the output beam transmitted by the external modulator output is modulated by changing a relative phase angle between the pulsating current powering the laser, and the control signal of the external modulator over time. The external modulator may be an intensity-type modulator whose output is controlled by a gate signal having a constant phase, and the source of pulsating current powering the laser may be variable phase in order to modulate the output beam with an external modulator having a simple structure. Both the system and method are advantageously compatible with DFB lasers, and avoid wavelength drift and the consequent thermally induced patterning effect by powering the laser with a pulsating current having a constant duty cycle.

8. 发明授权

US10008627B2 Photovoltaic cell and photovoltaic cell manufacturing method 有权
公开(公告)号：US10008627B2
公开(公告)日：2018-06-26
申请号：US15229320
申请日：2016-08-05
申请人： Shunichi Sato , Nobuhiko Nishiyama
发明人： Shunichi Sato , Nobuhiko Nishiyama
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0687 , H01L31/0352 , H01L31/043
CPC分类号： H01L31/1836 , H01L31/035236 , H01L31/043 , H01L31/0687 , H01L31/06875 , H01L31/1804 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.

9. 发明申请

US20150333214A1 PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL MANUFACTURING METHOD 有权
标题翻译：光电池和光电池制造方法
公开(公告)号：US20150333214A1
公开(公告)日：2015-11-19
申请号：US14443480
申请日：2013-11-25
申请人： Shunichi SATO , Nobuhiko NISHIYAMA
发明人： Shunichi Sato , Nobuhiko Nishiyama
IPC分类号： H01L31/18 , H01L31/043 , H01L31/0352 , H01L31/0687
CPC分类号： H01L31/1836 , H01L31/035236 , H01L31/043 , H01L31/0687 , H01L31/06875 , H01L31/1804 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.
摘要翻译：光电池制造方法包括：在第一硅衬底上沉积用于进行晶格弛豫的第一缓冲层; 在第一缓冲层上沉积第一光电转换单元，第一光电转换单元由具有pn结的化合物半导体形成，第一光电转换单元的晶格常数高于硅的晶格常数; 将支撑基板连接到第一光电转换单元以形成第一层叠体; 以及从第一层叠体移除第一缓冲层和第一硅衬底。

10. 发明申请

US20150034153A1 COMPOUND PHOTOVOLTAIC CELL 审中-公开
标题翻译：化合物光电池
公开(公告)号：US20150034153A1
公开(公告)日：2015-02-05
申请号：US14445249
申请日：2014-07-29
申请人： Shunichi Sato , Nobuhiko Nishiyama
发明人： Shunichi Sato , Nobuhiko Nishiyama
IPC分类号： H01L31/0725 , H01L31/0735
CPC分类号： H01L31/0725 , H01L31/02966 , H01L31/03046 , H01L31/0512 , H01L31/0687 , H01L31/0693 , H01L31/0735 , H01L31/1844 , Y02E10/544
摘要： A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.
摘要翻译：复合光伏电池包括基板，由第一半导体材料制成并形成在基板上的第一单元，隧道层和由与基板的材料错配的第二半导体材料晶格制成的第二单元，第二半导体材料与第一半导体材料的第一并且相对于第一单元设置在入射侧，其中第一和第二单元的带隙从入射侧变为较小，并且其中，隧道层包括p型设置在入射侧的层和设置在背面的n型层，p型层是p +型（Al）GaInAs层，n型层是n +型InP层，n + 对于具有相对于InP的拉伸应变的InP或n +型Ga（In）PSb层具有拉伸应变的GaInP层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式