专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20170213932A1 COMPOUND PHOTOVOLTAIC CELL 审中-公开
公开(公告)号：US20170213932A1
公开(公告)日：2017-07-27
申请号：US15483633
申请日：2017-04-10
申请人： Shunichi SATO , Nobuhiko Nishiyama
发明人： Shunichi SATO , Nobuhiko Nishiyama
IPC分类号： H01L31/0725 , H01L31/0296 , H01L31/0693 , H01L31/0735 , H01L31/0304 , H01L31/0687 , H01L31/05 , H01L31/18
CPC分类号： H01L31/0725 , H01L31/02966 , H01L31/03046 , H01L31/0512 , H01L31/0687 , H01L31/0693 , H01L31/0735 , H01L31/1844 , Y02E10/544
摘要： A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.

2. 发明申请

US20160343898A1 PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL MANUFACTURING METHOD 审中-公开
公开(公告)号：US20160343898A1
公开(公告)日：2016-11-24
申请号：US15229320
申请日：2016-08-05
申请人： Shunichi SATO , Nobuhiko Nishiyama
发明人： Shunichi SATO , Nobuhiko Nishiyama
IPC分类号： H01L31/18 , H01L31/0687 , H01L31/043
CPC分类号： H01L31/1836 , H01L31/035236 , H01L31/043 , H01L31/0687 , H01L31/06875 , H01L31/1804 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.

3. 发明申请

US20170077340A1 COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD OF COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL 审中-公开
标题翻译：化合物 - 半导体光电池和复合半导体光伏电池的制造方法
公开(公告)号：US20170077340A1
公开(公告)日：2017-03-16
申请号：US15309067
申请日：2015-07-08
申请人： Shunichi SATO
发明人： Shunichi SATO
IPC分类号： H01L31/0687 , H01L31/0693
CPC分类号： H01L31/0687 , H01L31/03046 , H01L31/06875 , H01L31/0693 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with GaAs or Ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (Alx1Ga1-x1)y1In1-y1As (0≦x1
摘要翻译：化合物半导体光伏电池包括与GaAs或Ge晶格匹配的第一化合物半导体材料制成的第一光电转换单元; 第一隧道结层，沿着光入射方向布置在比第一光电转换单元更远的深侧，并且包括第一p型（Al x Ga 1-x 1）y 1 In 1-y 1 As（0≤x1 <1,0

4. 发明申请

US20170025820A1 SURFACE EMITTING LASER, SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR 审中-公开
标题翻译：表面发射激光，表面发射激光元件和原子振荡器
公开(公告)号：US20170025820A1
公开(公告)日：2017-01-26
申请号：US15124456
申请日：2015-02-24
申请人： Ryoichiro SUZUKI , Shunichi SATO
发明人： Ryoichiro SUZUKI , Shunichi SATO
IPC分类号： H01S5/183 , G04F5/14 , H01S5/42 , H03L7/26 , H01S5/042 , H01S5/40
CPC分类号： H01S5/18377 , G04F5/145 , H01S5/0421 , H01S5/18313 , H01S5/18341 , H01S5/18358 , H01S5/4087 , H01S5/423 , H03L7/26
摘要： A surface emitting laser for emitting light with a wavelength λ includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×λ/4 (N=1, 2, . . . ).
摘要翻译：用于发射具有波长λ的光的表面发射激光器包括设置在半导体衬底上的第一反射镜; 包括设置在所述第一反射镜上的有源层的谐振器区域; 第二反射镜，包括设置在谐振器区域上的多个低折射率层和多个高折射率层; 设置在所述第二反射镜上的接触层; 设置在所述接触层上的第三反射镜; 以及设置在有源层和第二反射镜之间或第二反射镜中的电流变窄层。形成在电流变窄层和接触层之间的低折射率层和高折射率层中的至少一个厚度的光学长度为（2N + 1）×λ/ 4（N = 1,2，...）。。）。

5. 发明申请

US20200303964A1 POWER TRANSMISSION SYSTEM, LIGHT OUTPUT APPARATUS, AND LIGHT RECEIVING APPARATUS 审中-公开
公开(公告)号：US20200303964A1
公开(公告)日：2020-09-24
申请号：US16819444
申请日：2020-03-16
申请人： Shunichi SATO
发明人： Shunichi SATO
IPC分类号： H02J50/30 , H02J50/90 , H02J50/40 , H02J50/80 , H01S5/40 , H02S20/32
摘要： A power transmission system including a light output apparatus and a light receiving apparatus is provided. The light output apparatus includes a plurality of light sources having different wavelengths, and a light output control unit configured to control light outputs of the plurality of light sources, and the light receiving apparatus includes a photoelectric conversion element configured to absorb light beams emitted from the plurality of light sources, and convert the absorbed light beams into electrical power. The light output control unit individually sets each of the light outputs of the plurality of light sources.

6. 发明申请

US20110115872A1 SURFACE-EMITTING LASER ELEMENT, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER DEVICE, AND IMAGE FORMING APPARATUS 有权
标题翻译：表面发射激光元件，表面发射激光阵列，光学扫描仪器和图像形成装置
公开(公告)号：US20110115872A1
公开(公告)日：2011-05-19
申请号：US12910262
申请日：2010-10-22
申请人： Kazuhiro HARASAKA , Shunichi SATO , Naoto JIKUTANI , Satoru SUGAWARA
发明人： Kazuhiro HARASAKA , Shunichi SATO , Naoto JIKUTANI , Satoru SUGAWARA
IPC分类号： B41J2/435 , H01S5/00 , G02B26/08 , G02B26/10
CPC分类号： H01S5/18394 , B41J2/45 , B82Y20/00 , G02B5/0833 , G02B26/124 , G02B27/0977 , G03G15/04072 , G03G15/0435 , G03G15/326 , G03G2215/0404 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/1835 , H01S5/18355 , H01S5/18358 , H01S5/18369 , H01S5/18391 , H01S5/3202 , H01S5/3434 , H01S5/423 , H01S2301/166
摘要： A disclosed surface-emitting laser element includes a substrate, multiple semiconductor layers stacked on the substrate including a resonator structure including an active layer, a semiconductor multilayer mirror on the resonator structure, and a confined structure where a current passage region is enclosed by at least an oxide generated by oxidation of part of a selective oxidation layer containing aluminum, an electrode provided around an emission region, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than that of the central portion. The dielectric film is arranged such that a reflectance of a high-order transverse mode in a second direction is higher than that in a first direction, and a width of the current passage region in the first direction is greater than that in the second direction.
摘要翻译：所公开的表面发射激光器元件包括：衬底，层叠在衬底上的多个半导体层，包括谐振器结构，该谐振器结构包括有源层，谐振器结构上的半导体多层反射镜，以及至少包含电流通过区域的限制结构通过氧化生成的含有铝的选择性氧化层的部分的氧化物，设置在发光区域周围的电极，以及设置在发光区域的周边部分和发光区域的中心部分外的电介质膜，周边部分低于中央部分的周边部分。电介质膜被布置成使得第二方向上的高次横模的反射率高于第一方向的反射率，并且电流通过区域在第一方向上的宽度大于第二方向上的宽度。

7. 发明申请

US20090303308A1 SURFACE-EMITTING LASER ELEMENT, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS 有权
标题翻译：表面发射激光元件，表面发射激光阵列，光学扫描装置和图像形成装置
公开(公告)号：US20090303308A1
公开(公告)日：2009-12-10
申请号：US12478085
申请日：2009-06-04
申请人： Akihiro ITOH , Shunichi SATO
发明人： Akihiro ITOH , Shunichi SATO
IPC分类号： H01S5/00 , G02B26/10 , B41J2/47
CPC分类号： H01S5/18394 , G02B26/123 , H01S5/18311 , H01S5/1835 , H01S5/18355 , H01S5/3202 , H01S5/423
摘要： A surface-emitting laser element for emitting light in a direction perpendicular to a substrate, including a substrate with a normal direction of a principal plane inclining toward one direction of with respect to one direction of and a mesa structure formed on the substrate and having a narrowed structure with an oxide produced by oxidizing a part of a layer to be oxidized selectively, containing aluminum and surrounding an electric current passage area, wherein a cross-section of mesa structure being parallel to the substrate is parallel to a substrate surface and orthogonal to both one direction of and one direction of and a length in a first direction passing through a center of the electric current passage area is more than a length in a second direction parallel to a substrate surface and orthogonal to the first direction.
摘要翻译： 1.一种表面发射激光元件，用于沿垂直于衬底的方向发射光，包括基本上沿相对于<100°的一个方向向<111>倾斜的主平面的法线方向的基板和形成的台面结构并且具有通过氧化被选择性地被氧化的一部分被氧化物并且包围电流通道区域而产生的氧化物的窄结构，其中平行于衬底的台面结构的横截面平行于与<100>的一个方向和<111>的一个方向正交且通过电流通道区域的中心的沿着第一方向的长度的基板表面大于平行于基板的第二方向的长度表面并与第一方向正交。

8. 发明申请

US20160149375A1 SURFACE-EMITTING LASER MODULE, OPTICAL SCANNER DEVICE, AND IMAGE FORMING APPARATUS 审中-公开
公开(公告)号：US20160149375A1
公开(公告)日：2016-05-26
申请号：US15001959
申请日：2016-01-20
申请人： Toshihiro ISHll , Satoru SUGAWARA , Yoshihiro OHBA , Kazuhiro HARASAKA , Shunichi SATO , Kazuhiko ADACHI
发明人： Toshihiro ISHll , Satoru SUGAWARA , Yoshihiro OHBA , Kazuhiro HARASAKA , Shunichi SATO , Kazuhiko ADACHI
IPC分类号： H01S5/022 , G06K15/12 , B41J2/47 , H01S5/42
CPC分类号： H01S5/02208 , B41J2/45 , B41J2/47 , B82Y20/00 , G06K15/129 , H01S5/02212 , H01S5/02248 , H01S5/02296 , H01S5/0425 , H01S5/0683 , H01S5/18311 , H01S5/18347 , H01S5/1835 , H01S5/18355 , H01S5/18358 , H01S5/18386 , H01S5/18391 , H01S5/18394 , H01S5/3202 , H01S5/34306 , H01S5/34333 , H01S5/423 , H01S2301/14
摘要： A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.

9. 发明申请

US20160005911A1 COMPOUND SEMICONDUCTOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：化合物半导体光电池及其制造方法
公开(公告)号：US20160005911A1
公开(公告)日：2016-01-07
申请号：US14773091
申请日：2014-03-12
申请人： Shunichi SATO , RICOH COMPANY, LTD.
发明人： Shunichi SATO
IPC分类号： H01L31/0687 , H01L31/0352 , H01L31/0304 , H01L31/0693
CPC分类号： H01L31/0687 , H01L31/03046 , H01L31/043 , H01L31/0693 , H01L31/1844 , H01L31/1892 , Y02E10/544
摘要： A compound semiconductor photovoltaic cell includes a compound semiconductor substrate; one or more first photoelectric conversion cells deposited on the compound semiconductor substrate; a bonding layer deposited on the one or more first photoelectric conversion cells; and one or more second photoelectric conversion cells bonded to the one or more first photoelectric conversion cells via the bonding layer, and disposed on a light incident side of the one or more first photoelectric conversion cells in a light incident direction. Further, band gaps of the first and the second photoelectric conversion cells decrease as the first and the second photoelectric conversion cells approach from the light incident side toward a back side in the light incident direction, and when there is one second photoelectric conversion cells, a band gap of the bonding layer is greater than or equal to a band gap of the second photoelectric conversion cell.
摘要翻译：化合物半导体光伏电池包括化合物半导体衬底; 沉积在化合物半导体衬底上的一个或多个第一光电转换单元; 沉积在所述一个或多个第一光电转换单元上的结合层; 以及一个或多个第二光电转换单元，其经由所述接合层接合到所述一个以上的第一光电转换单元，并且在所述一个以上的第一光电转换单元的光入射方向的光入射侧配置。此外，第一和第二光电转换单元的带隙随着第一和第二光电转换元件在光入射方向上从光入射侧朝向后侧而减小，并且当存在一个第二光电转换单元时，键合层的带隙大于或等于第二光电转换单元的带隙。

10. 发明申请

US20120263206A1 SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF 有权
标题翻译：表面发射激光二极管及其制造工艺
公开(公告)号：US20120263206A1
公开(公告)日：2012-10-18
申请号：US13459333
申请日：2012-04-30
申请人： Shunichi SATO , Akihiro Itoh , Naoto Jikutani
发明人： Shunichi SATO , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01S5/34 , H04B10/04 , G03G15/04
CPC分类号： H01S5/343 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/18383 , H01S5/2205 , H01S5/423
摘要： A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region, the upper reflector and/or the lower reflector including a semiconductor Bragg reflector, at least a part of the semiconductor distributed Bragg reflector includes a semiconductor layer containing Al, Ga and As as major components, there being provided, between the active layer and the semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components adjacent to the semiconductor layer that contains Al, Ga and As as major components, with an interface formed coincident to a location of a node of electric strength distribution.
摘要翻译：表面发射激光二极管包括GaAs衬底，空腔区域和设置在空腔区域的顶部和底部的上反射器和下反射器，上反射器和/或下反射器包括半导体布拉格反射器，半导体分布布拉格反射器的至少一部分包括以Al，Ga和As为主要成分的半导体层，在有源层和含有Al，Ga和As作为主要成分的半导体层之间提供含有 Al，In和P作为与Al，Ga和As作为主要成分的半导体层相邻的主要成分，其界面与电强度分布的节点的位置一致。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式