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1. 发明授权

US06774965B2 Liquid crystal display device and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US06774965B2
公开(公告)日：2004-08-10
申请号：US10372315
申请日：2003-02-25
申请人： Ken Nakashima , Yasushi Matsui , Yasunori Niwano
发明人： Ken Nakashima , Yasushi Matsui , Yasunori Niwano
IPC分类号： G02F11335
CPC分类号： G02F1/133555 , G02F2001/136236
摘要： A semi-transmissive liquid crystal display device is provided with a pixel electrode having in one pixel a reflective electrode reflecting outside light, and a transmissive electrode transmitting light from a back light source, on one of a pair of substrates facing to each other with a liquid crystal film placed in between. The reflective electrode and the transmissive electrode constituting the pixel electrode are formed without having a insulation layer in between. A manufacturing process thereof is simplified by halftone exposure.
摘要翻译：半透射型液晶显示装置具有像素电极，该像素电极在一个像素中具有反射外部光的反射电极，以及透射电极，其从背光源发射光，在一对基板中的一个基板上彼此面对，具有液晶膜放置在其间。构成像素电极的反射电极和透射电极形成为不具有绝缘层。其制造方法通过半色调曝光被简化。

2. 发明申请

US20050231670A1 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050231670A1
公开(公告)日：2005-10-20
申请号：US11106601
申请日：2005-04-15
申请人： Takafumi Hashiguchi , Akio Nakayama , Yasushi Matsui
发明人： Takafumi Hashiguchi , Akio Nakayama , Yasushi Matsui
IPC分类号： G02F1/1335 , G02F1/1333 , G02F1/1343 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L29/786
CPC分类号： G02F1/133555 , G02F1/134336 , G02F1/136227
摘要： A display device having a substrate provided with a display region includes a lower layer film formed on the substrate, a transparent conductive thin film formed on the lower layer film and electrically connected thereto, and a protective film formed on the transparent conductive film in a region other than the display region to prevent malformation of the transparent conductive thin film and the lower layer film.
摘要翻译：具有设置有显示区域的基板的显示装置包括形成在基板上的下层膜，形成在下层膜上并与其电连接的透明导电薄膜，以及形成在透明导电膜上的保护膜除了显示区域以防止透明导电薄膜和下层膜的畸变。

3. 发明授权

US5339325A Strained multiple quantum well semiconductor laser and a method for producing the same 失效
标题翻译：应变多量子阱半导体激光器及其制造方法
公开(公告)号：US5339325A
公开(公告)日：1994-08-16
申请号：US101933
申请日：1993-08-04
申请人： Masahiro Kito , Yasushi Matsui
发明人： Masahiro Kito , Yasushi Matsui
IPC分类号： H01S5/00 , H01S5/042 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/34313 , H01S5/2275 , H01S5/3403 , H01S5/3406 , H01S5/3407 , H01S5/34306 , Y10S438/938
摘要： A strained multiple quantum well semiconductor laser including a semiconductor substrate, a multiple quantum well active layer including a plurality quantum well layers and a plurality of barrier layers, and a multilayer structure including the above multiple quantum well active layer is provided. Each barrier layer is interposed between two of the multiple quantum well active layers. The multilayer structure is formed upon the semiconductor substrate. Herein, at least one of the plurality of barrier layers is thicker than the other barrier layers, thereby serving as a layer absorbing strain which is stored in the barrier layers due to a difference between the lattice constant of semiconductor substrate and the lattice constant each quantum well layer.
摘要翻译：提供了包括半导体衬底的应变量子阱半导体激光器，包括多个量子阱层和多个势垒层的多量子阱活性层以及包括上述多量子阱活性层的多层结构。每个阻挡层插入在多个量子阱活性层中的两个之间。多层结构形成在半导体衬底上。这里，多个阻挡层中的至少一个比其他阻挡层厚，从而由于半导体衬底的晶格常数和每个量子之间的晶格常数之间的差异而被用作存储在势垒层中的层吸收应变井层。

4. 发明授权

US5338699A Method of making a semiconductor integrated device having gate sidewall structure 失效
标题翻译：制造具有栅极侧壁结构的半导体集成器件的方法
公开(公告)号：US5338699A
公开(公告)日：1994-08-16
申请号：US10691
申请日：1993-01-29
申请人： Makoto Ohi , Hideaki Arima , Natsuo Ajika , Atsushi Hachisuka , Yasushi Matsui
发明人： Makoto Ohi , Hideaki Arima , Natsuo Ajika , Atsushi Hachisuka , Yasushi Matsui
IPC分类号： H01L27/04 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/70 , H01L27/00
CPC分类号： H01L27/10852 , H01L21/76801 , H01L21/76834 , H01L27/10808 , Y10S257/90
摘要： A method of making a semiconductor device including a plurality of gate electrodes (6a, 6b, 6c, 6d) arranged on the surface of a semiconductor substrate (1) with insulating layers (5, 8) covering the top and the side walls of the gate electrodes. The spaces between the opposing side walls of adjacent gate electrodes on the surface of the element isolation region (2) are smaller than twice the thickness of the thinnest insulating layer (8) among the insulating layers of the side walls of the gate electrodes on the surface of the active regions. The space (14) between the gate electrodes on the element isolation region is filled with the insulating isolation layer (8) so that unevenness in the underlying portion on the element isolation region on which the conductive interconnection layer (10) to be formed is reduced, preventing thinning of the conductive interconnection layer and disconnection due to excessive etching of a resist film in patterning the conductive interconnection layer.
摘要翻译：一种制造半导体器件的方法，该半导体器件包括布置在半导体衬底（1）的表面上的多个栅电极（6a，6b，6c，6d），绝缘层（5,8）覆盖了顶部和侧壁栅电极。元件隔离区域（2）表面上的相邻栅电极的相对侧壁之间的间隔小于栅电极侧壁绝缘层中最薄绝缘层（8）的厚度的两倍活性区的表面。元件隔离区域上的栅电极之间的空间（14）填充有绝缘隔离层（8），使得要形成导电互连层（10）的元件隔离区域上的下面部分的不均匀性减小防止导电互连层变薄，并且在图案化导电互连层时由于抗蚀剂膜的过度蚀刻而导致的断开。

5. 发明授权

US5240872A Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions 失效
标题翻译：制造具有接触源极/漏极区域的互连层的半导体器件的方法
公开(公告)号：US5240872A
公开(公告)日：1993-08-31
申请号：US925148
申请日：1992-08-06
申请人： Kaoru Motonami , Natsuo Ajika , Atsushi Hachisuka , Yoshinori Okumura , Yasushi Matsui
发明人： Kaoru Motonami , Natsuo Ajika , Atsushi Hachisuka , Yoshinori Okumura , Yasushi Matsui
IPC分类号： H01L21/8242 , H01L23/485 , H01L27/108
CPC分类号： H01L27/10873 , H01L23/485 , H01L27/10817 , H01L2924/0002
摘要： A semiconductor device includes a MOS type field effect transistor whose gate electrode (4) has its surface covered with a first insulating film (5) and left and right sides provided with a pair of second insulating films (10). A first conductive layer (12, 13) is formed on the surface of the source/drain region (8, 11) and the surface of one of a pair of second insulating films (10) which are positioned on one side of the gate electrode (4). A third insulating film (24b) is formed at least on the surface of the second insulating film (10) on which the first conductive layer (12, 13) is not formed. A second conductive layer (18) is provided on the surface of the third insulating film (24b) and on the source/drain region (8, 11) on which the third insulating film (24b) is formed. This structure enables provision of a semiconductor device in which a contact hole can be formed in self-alignment, independent from the influence of errors in the step of patterning a resist mask.
摘要翻译：半导体器件包括MOS型场效应晶体管，其栅极（4）的表面被第一绝缘膜（5）覆盖，左右侧设置有一对第二绝缘膜（10）。第一导电层（12,13）形成在源/漏区（8,11）的表面上，并且一对第二绝缘膜（10）中的一个位于栅电极的一侧的表面（4）。至少在没有形成第一导电层（12,13）的第二绝缘膜（10）的表面上形成第三绝缘膜（24b）。在第三绝缘膜（24b）的表面和形成有第三绝缘膜（24b）的源/漏区（8,11）上设置第二导电层（18）。该结构能够提供可以独立于图案化抗蚀剂掩模的步骤中的误差的影响的自对准中形成接触孔的半导体器件。

6. 发明授权

US07923729B2 Active matrix substrate and its manufacturing method 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US07923729B2
公开(公告)日：2011-04-12
申请号：US12470978
申请日：2009-05-22
申请人： Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
发明人： Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
IPC分类号： H01L29/04 , H01L29/10
CPC分类号： G02F1/136213 , G02F1/136227 , H01L27/12 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L51/56
摘要： An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact holes.
摘要翻译：提供具有高开口率的有源矩阵基板，其能够防止像素电极和辅助电容电极之间的电短路。栅极线和辅助电容电极形成在绝缘基板上。辅助电容电极具有从其形成的孔。为了覆盖栅极线和辅助电容电极，形成第一层间绝缘膜，在其上形成源极线，半导体层和漏极。然后，形成第二层间绝缘膜以覆盖所有这些层。在第二层间绝缘膜中，形成接触孔到达与孔的区域对应的区域中的漏电极。形成在第二层间绝缘膜上的像素电极通过接触孔与漏电极连接。

7. 发明授权

US6151351A Distributed feedback semiconductor laser and method for producing the same 失效
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：US6151351A
公开(公告)日：2000-11-21
申请号：US534959
申请日：1995-09-28
申请人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
发明人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
IPC分类号： H01L21/205 , H01S5/026 , H01S5/0625 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/323 , H01S5/343 , H01S3/085 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/0243 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/0265 , H01S5/12 , H01S5/1228 , H01S5/125 , H01S5/06256 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/34306 , H01S5/3434 , H01S5/34373
摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.
摘要翻译：在分布式反馈半导体激光器中包括InP衬底和形成在InP衬底的主表面上的多层结构，该多层结构至少包括用于发射激光的有源层和用于激光的分布反馈的周期性结构并且周期性结构包括多个半导体区域，每个半导体区域在垂直于InP衬底的主表面的方向上具有三角形横截面并且平行于分布式反馈半导体激光器的腔长度，三角形横截面朝向InP 基质。

8. 发明授权

US5764682A Distributed feedback semiconductor laser and method for fabricating the same 失效
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：US5764682A
公开(公告)日：1998-06-09
申请号：US606455
申请日：1996-02-23
申请人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
发明人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
IPC分类号： H01L21/00 , H01S5/12 , H01S5/34 , H01S3/19
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/2022 , H01S5/3403 , H01S5/3428 , H01S5/3434 , Y10S148/095
摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.
摘要翻译：一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域。光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

9. 发明授权

US5621747A Multi quantum well semiconductor laser and optical communication system using the same 失效
标题翻译：多量子阱半导体激光器和光通信系统使用相同
公开(公告)号：US5621747A
公开(公告)日：1997-04-15
申请号：US366027
申请日：1994-12-29
申请人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui
发明人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui
IPC分类号： H01S5/062 , H01S5/12 , H01S5/34 , H01S5/343 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/3434 , H01S2301/06 , H01S2302/00 , H01S5/06226 , H01S5/3407 , H01S5/34306
摘要： A multi quantum well semiconductor laser includes an InP substrate and a multi-layered structure formed on the InP substrate, lasing at 1.29 .mu.m to 1.33 .mu.m wavelength, wherein the multi-layered structure includes at least a multi quantum well active layer, the multi quantum well active layer including InGaAsP well layers and InGaAsP barrier layers alternately provided, the InGaAsP barrier layers are lattice matched with the InP substrate, and a bandgap wavelength of the InGaAsP barrier layers is substantially equal to 1.05 .mu.m.
摘要翻译：多量子阱半导体激光器包括InP衬底和形成在InP衬底上的多层结构，激光在1.29μm至1.33μm波长处，其中多层结构至少包括多量子阱活性层，包括InGaAsP阱层和InGaAsP势垒层的多量子阱有源层交替设置，InGaAsP势垒层与InP衬底晶格匹配，并且InGaAsP势垒层的带隙波长基本上等于1.05μm。

10. 发明授权

US5039553A Mixed batchwise and continuous process for the production of cobalt modified magnetic iron oxide powder for use in high density recording 失效
标题翻译：用于生产用于高密度记录的钴改性的磁性氧化铁粉末的混合分批连续方法
公开(公告)号：US5039553A
公开(公告)日：1991-08-13
申请号：US503640
申请日：1990-04-03
申请人： Yuji Fukumoto , Kazuyoshi Matsumoto , Yasushi Matsui
发明人： Yuji Fukumoto , Kazuyoshi Matsumoto , Yasushi Matsui
IPC分类号： C01G49/00 , G11B5/706 , G11B5/712 , H01F1/11
CPC分类号： G11B5/70673 , G11B5/712
摘要： A process for the continuous production of cobalt-modified magnetic iron oxide. This process comprises carrying out a batchwise preliminary cobalt treatment by adding a magnetic iron oxide powder to an alkaline solution followed by the addition of a cobalt salt to cover the magnetic iron oxide powder with cobalt. A cobalt modification reaction is carried out continuously by passing the solution containing the preliminary cobalt-treated magnetic iron oxide powder under heat and pressure through a flow-type reaction vessel.

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