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1. 发明授权

US07923729B2 Active matrix substrate and its manufacturing method 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US07923729B2
公开(公告)日：2011-04-12
申请号：US12470978
申请日：2009-05-22
申请人： Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
发明人： Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
IPC分类号： H01L29/04 , H01L29/10
CPC分类号： G02F1/136213 , G02F1/136227 , H01L27/12 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L51/56
摘要： An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact holes.
摘要翻译：提供具有高开口率的有源矩阵基板，其能够防止像素电极和辅助电容电极之间的电短路。栅极线和辅助电容电极形成在绝缘基板上。辅助电容电极具有从其形成的孔。为了覆盖栅极线和辅助电容电极，形成第一层间绝缘膜，在其上形成源极线，半导体层和漏极。然后，形成第二层间绝缘膜以覆盖所有这些层。在第二层间绝缘膜中，形成接触孔到达与孔的区域对应的区域中的漏电极。形成在第二层间绝缘膜上的像素电极通过接触孔与漏电极连接。

2. 发明授权

US07554119B2 Active matrix substrate and its manufacturing method 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US07554119B2
公开(公告)日：2009-06-30
申请号：US11274281
申请日：2005-11-16
申请人： Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
发明人： Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： G02F1/136213 , G02F1/136227 , H01L27/12 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L51/56
摘要： An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact
摘要翻译：提供了具有高开口率的有源矩阵基板，其能够防止像素电极和辅助电容电极之间的电短路。栅极线和辅助电容电极形成在绝缘基板上。辅助电容电极具有从其形成的孔。为了覆盖栅极线和辅助电容电极，形成第一层间绝缘膜，在其上形成源极线，半导体层和漏极。然后，形成第二层间绝缘膜以覆盖所有这些层。在第二层间绝缘膜中，形成接触孔到达与孔的区域对应的区域中的漏电极。形成在第二层间绝缘膜上的像素电极通过接触连接到漏电极

3. 发明申请

US20060169983A1 Active matrix substrate and its manufacturing method 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US20060169983A1
公开(公告)日：2006-08-03
申请号：US11274281
申请日：2005-11-16
申请人： Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
发明人： Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
IPC分类号： H01L29/04
CPC分类号： G02F1/136213 , G02F1/136227 , H01L27/12 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L51/56
摘要： An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact holes.
摘要翻译：提供了具有高开口率的有源矩阵基板，其能够防止像素电极和辅助电容电极之间的电短路。栅极线和辅助电容电极形成在绝缘基板上。辅助电容电极具有从其形成的孔。为了覆盖栅极线和辅助电容电极，形成第一层间绝缘膜，在其上形成源极线，半导体层和漏极。然后，形成第二层间绝缘膜以覆盖所有这些层。在第二层间绝缘膜中，形成接触孔到达与孔的区域对应的区域中的漏电极。形成在第二层间绝缘膜上的像素电极通过接触孔与漏电极连接。

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