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1. 发明申请

US20100323160A1 ZnO-BASED THIN FILM 审中-公开
标题翻译：基于ZnO的薄膜
公开(公告)号：US20100323160A1
公开(公告)日：2010-12-23
申请号：US12526113
申请日：2008-02-06
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： B32B33/00 , C30B29/16 , B32B9/00
CPC分类号： H01L21/02554 , C30B23/02 , C30B29/16 , H01L21/02403 , H01L21/0243 , H01L21/02433 , H01L21/0262 , Y10T428/24355 , Y10T428/2457 , Y10T428/24612
摘要： Provided is a ZnO-based thin film for growing a flat film when the ZnO-based thin film is formed on a substrate. In FIG. 1(a), a ZnO-based film 2 is formed on a ZnO-based substrate 1. Meanwhile, in FIG. 1(b), a ZnO-based laminated body 10 that is a laminated body of ZnO-based thin films is formed on the ZnO-based substrate 1. The ZnO-based laminated body 10 is the laminated body in which multiple ZnO-based thin films including a ZnO-based thin film 3, a ZnO-based thin film 4 and the like are laminated. When forming the ZnO-based thin film 2 or the ZnO-based laminated body 10, the film or the body is formed at a growth temperature of 750° C. or above, or alternatively, a step structure on a surface of the film is formed into a predetermined structure such that roughness on the surface of the film is in a predetermined range.
摘要翻译：提供了当在基板上形成ZnO基薄膜时用于生长平坦膜的ZnO基薄膜。在图如图1（a）所示，在ZnO系基板1上形成ZnO系膜2。如图1（b）所示，在ZnO系基板1上形成作为ZnO系薄膜的层叠体的ZnO系叠层体10. ZnO系叠层体10为多层ZnO系层叠包含ZnO系薄膜3，ZnO系薄膜4等的薄膜。当形成ZnO基薄膜2或ZnO基层叠体10时，在750℃以上的生长温度下形成薄膜或者本体，或者也可以在薄膜的表面上形成台阶结构形成为预定结构，使得薄膜表面上的粗糙度处于预定范围内。

2. 发明申请

US20080073659A1 Semiconductor Light Emitting Device 有权
标题翻译：半导体发光装置
公开(公告)号：US20080073659A1
公开(公告)日：2008-03-27
申请号：US11662097
申请日：2005-09-07
申请人： Kentaro Tamura , Ken Nakahara
发明人： Kentaro Tamura , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405
摘要： A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device (11) includes a light emitting layer (16) made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer (17) and a p-type GaN-based semiconductor layer (15), and a ZnO-based or an ITO transparent electrode layer (14). Further, a value of an equation represented by 3t/(A/π)1/2−3(t/(A/π)1/2)2+(t/(A/π)1/2)3 is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device (11) is represented by A. The light emitting efficiency is improved using the transparent electrode layer (14) having an optimum thickness to the light emitting area.
摘要翻译：提供了一种提高了LED的发光效率的半导体发光器件。半导体发光器件（11）包括由夹在n型GaN基半导体层（17）和p型GaN基半导体层（15）之间的GaN基半导体制成的发光层（16），以及ZnO系或ITO透明电极层（14）。此外，由3t /（A / pi）×1 / 3-3（t /（A / pi）1/2）表示的等式的值 2 +（t /（A / pi）1/2）3 3以上，透明电极层的厚度为t 并且发光器件（11）的发光层（发光区域）的面积由A表示。使用对于发光区域具有最佳厚度的透明电极层（14）来提高发光效率。

3. 发明申请

US20080308836A1 Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer 审中-公开
标题翻译：氮化物半导体器件和氮化物半导体晶体层生长方法
公开(公告)号：US20080308836A1
公开(公告)日：2008-12-18
申请号：US11883062
申请日：2006-01-26
申请人： Ken Nakahara , Kentaro Tamura
发明人： Ken Nakahara , Kentaro Tamura
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66454 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/12
摘要： There are provided a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like, obtained by forming a buffer layer of a single crystal of the nitride semiconductor, in which both a-axis and c-axis are aligned, directly on a substrate lattice-mismatched with the nitride semiconductor without forming an amorphous low temperature buffer layer, and growing epitaxially the nitride semiconductor layer on the buffer layer of the single crystal. In this device, a single crystal buffer layer (2), made of a single crystal of AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1 and 0≦x+y≦1), in which a-axis and c-axis are aligned, is directly formed on a substrate (1) lattice-mismatched with nitride semiconductor, and a nitride semiconductor layer (3) is epitaxially grown on the buffer layer (2) of the single crystal. The buffer layer of the single crystal can be formed by the use of a PLD method.
摘要翻译：提供了一种氮化物半导体器件，例如氮化物半导体发光器件，晶体管器件等，其通过形成氮化物半导体的单晶的缓冲层而获得，其中a轴和c轴都被对准直接在与氮化物半导体晶格失配的衬底上，而不形成非晶低温缓冲层，并且在单晶缓冲层上外延生长氮化物半导体层。在该器件中，由AlxGayIn1-x-yN（0≤x≤1,0<= y <= 1和0 <= x + y <= 1）的单晶制成的单晶缓冲层（2）），其中a轴和c轴对准，直接形成在与氮化物半导体晶格失配的衬底（1）上，并且氮化物半导体层（3）外延生长在单晶。单晶的缓冲层可以通过使用PLD法形成。

4. 发明申请

US20080187776A1 MULTILAYER SUBSTRATE 审中-公开
标题翻译：多层基板
公开(公告)号：US20080187776A1
公开(公告)日：2008-08-07
申请号：US12026863
申请日：2008-02-06
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Yoshio Nishimoto , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Yoshio Nishimoto , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： B32B15/00
CPC分类号： C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , Y10T428/12778
摘要： Provided is a multilayer substrate having the configuration in which a multilayer film is formed on a principal surface opposite to a principal surface in the oxide-thin-film lamination direction in a translucent substrate. The multilayer film is formed by sequentially laminating a dielectric film, Au (gold) film, and oxide film in this order from the translucent substrate. On the principal surface opposite to the principal surface on which the oxide thin film is disposed, the multilayer film containing the Au film is formed, the Au film can reflect and block the excessive infrared light from a substrate holder or a heat source at the time of growth. As a result, temperature can be accurately measured.
摘要翻译：提供一种多层基板，其具有在透光性基板中在与氧化物薄膜层叠方向的主面相反的主面上形成多层膜的结构。通过从透光性基板依次层叠电介质膜Au（金）膜和氧化膜而形成多层膜。在与设置有氧化物薄膜的主表面相对的主表面上形成含有Au膜的多层膜，Au膜可以反映并阻挡来自衬底保持器或热源的过多红外光的增长。结果，可以精确地测量温度。

5. 发明申请

US20110114937A1 p-TYPE MgZnO-BASED THIN FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译： p型MgZnO基薄膜和半导体发光器件
公开(公告)号：US20110114937A1
公开(公告)日：2011-05-19
申请号：US12672444
申请日：2008-08-01
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/12
CPC分类号： H01L33/285 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L33/0083
摘要： Provided are: a p-type MgZnO-based thin film that functions as a p-type; and a semiconductor light emitting device that includes the p-type MgZnO-based thin film.A p-type MgxZn1-xO-based thin film (1) is formed on a substrate (2) made of a ZnO-based semiconductor. The p-type MgxZn1-xO-based thin film (1) is composed so that X as a ratio of Mg with respect to Zn therein can be 0≦X
摘要翻译：提供：用作p型的p型MgZnO基薄膜; 以及包括p型MgZnO基薄膜的半导体发光器件。在由ZnO类半导体制成的基板（2）上形成p型Mg x Zn 1-x O系薄膜（1）。 p型Mg x Zn 1-x O系薄膜（1）的构成为，使Mg相对于Zn的比例的X为0以上，X <1，优选为0＆lt; NlE; X＆lt; lE; 0.5。在p型MgZnO薄膜（1）中，作为受体的p型杂质的氮含量约为5.0×1018 cm -3以上。 p型MgZnO薄膜（1）构成为使得成为供体的诸如硅的IV族元素制成的n型杂质的浓度可以为约1.0×10 17 cm -3以下。 p型MgZnO薄膜（1）构成为使得成为供体的诸如硼和铝的III族元素制成的n型杂质的浓度可以为约1.0×1016 cm -3以下。

6. 发明申请

US20100090214A1 OXIDE THIN FILM AND OXIDE THIN FILM DEVICE 审中-公开
标题翻译：氧化物薄膜和氧化物薄膜装置
公开(公告)号：US20100090214A1
公开(公告)日：2010-04-15
申请号：US12450614
申请日：2008-04-02
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/22
CPC分类号： C23C14/08 , C23C28/04 , C23C28/322 , C23C28/345 , C23C28/42 , C23C30/00 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02631 , H01L33/285
摘要： Provided are an oxide thin film doped with an n-type impurity, and an oxide thin film device. In an oxide thin film (2), as shown in FIG. 1(b), doped oxide layers (2a) doped with an n-type (electron-conductivity type) impurity and undoped oxide layers (2b) not doped with an n-type impurity are laminated in an alternating and repeated manner. When an oxide layer is doped with the n-type impurity at a high concentration, roughness of a surface of the oxide layer becomes large. For this reason, the doped oxide layers (2a) are covered with the undoped oxide layers (2b) capable of ensuring surface flatness, before surface roughness attributable to the doped oxide layers (2a) becomes very large. Thus, a flat oxide thin film can be formed.
摘要翻译：提供掺杂有n型杂质的氧化物薄膜和氧化物薄膜器件。在氧化物薄膜（2）中，如图1所示，如图1（b）所示，掺杂有n型（电子传导型）杂质的掺杂氧化物层（2a）和未掺杂n型杂质的未掺杂氧化物层（2b）以交替重复的方式层叠。当以高浓度掺杂n型杂质的氧化物层时，氧化物层的表面的粗糙度变大。为此，在由掺杂氧化物层（2a）引起的表面粗糙度变得非常大之前，掺杂氧化物层（2a）被能够确保表面平坦度的未掺杂氧化物层（2b）覆盖。因此，可以形成平坦的氧化物薄膜。

7. 发明申请

US20100040534A1 RADICAL GENERATING APPARATUS AND ZNO-BASED THIN FILM 审中-公开
标题翻译：辐射发生装置和基于ZNO的薄膜
公开(公告)号：US20100040534A1
公开(公告)日：2010-02-18
申请号：US12450146
申请日：2008-03-14
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： C01G9/02 , C23C16/513
CPC分类号： H05H3/02 , C23C16/407 , C23C16/452 , C30B23/002 , C30B25/105 , C30B29/16 , H01L21/02554 , H01L21/02579 , H01L21/02631
摘要： Provided are: a radical generating apparatus that increases a purity of emitted plasma atoms, prevents contamination with impurities, and is improved in controllability over ion concentration; and a ZnO-based thin film prevented from being contaminated with impurities. A high-frequency coil (4) is wound around an outer side of a discharging tube (10), and a terminal of the high-frequency coil (4) is connected to a high-frequency power source (9). The discharging tube (10) is constituted by a discharging cylinder (1), a lid (2) and a gas introducing bottom plate (3). Additionally, a support base (8) is provided, a support post (6) is arranged on the support base (8), and a shutter (5) is connected to the support post (6). With respect to shaded components, that is, the shutter (5), the lid (2), the discharging cylinder (1) and the gas introducing bottom plate (3), an entirety or a part thereof is formed of a silicon-based compound such as quartz.
摘要翻译：提供：提高发射等离子体原子的纯度的自由基发生装置，防止杂质污染，并且提高了离子浓度的可控性; 并且可以防止ZnO类薄膜被杂质污染。高频线圈（4）缠绕在放电管（10）的外侧，高频线圈（4）的端子与高频电源（9）连接。排出管（10）由排出筒（1），盖（2）和气体引入底板（3）构成。另外，提供支撑基座（8），支撑柱（6）布置在支撑基座（8）上，并且快门（5）连接到支撑柱（6）。对于阴影部件，即，挡板（5），盖（2），排出缸（1）和气体引入底板（3），其整体或一部分由硅基化合物如石英。

8. 发明授权

US07582905B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07582905B2
公开(公告)日：2009-09-01
申请号：US11662097
申请日：2005-09-07
申请人： Kentaro Tamura , Ken Nakahara
发明人： Kentaro Tamura , Ken Nakahara
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405
摘要： A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device (11) includes a light emitting layer (16) made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer (17) and a p-type GaN-based semiconductor layer (15), and a ZnO-based or an ITO transparent electrode layer (14). Further, a value of an equation represented by 3t/(A/π)1/2−3(t/(A/π)1/2)2+(t/(A/π)1/2)3 is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device (11) is represented by A. The light emitting efficiency is improved using the transparent electrode layer (14) having an optimum thickness to the light emitting area.
摘要翻译：提供了一种提高了LED的发光效率的半导体发光器件。半导体发光器件（11）包括由夹在n型GaN基半导体层（17）和p型GaN基半导体层（15）之间的GaN基半导体制成的发光层（16），以及ZnO系或ITO透明电极层（14）。此外，由3t /（A / pi）1 / 2-3（t /（A / pi）1/2）2+（t /（A / pi）1/2）3表示的方程的值为0.1 以上，透明电极层的厚度由t表示，发光元件（11）的发光面积（发光面积）的面积由A表示。发光效率通过透明对于发光区域具有最佳厚度的电极层（14）。

9. 发明申请

US20090146541A1 INFRARED REFLECTOR AND HEATING DEVICE HAVING THE SAME 审中-公开
标题翻译：红外线反射器和加热装置
公开(公告)号：US20090146541A1
公开(公告)日：2009-06-11
申请号：US12044736
申请日：2008-03-07
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01K1/26
CPC分类号： G02B5/0808 , G02B5/10 , H05B2203/032
摘要： Provided is an infrared reflector having the configuration in which a dielectric film, an Au (gold) film, and an oxide film are sequentially formed on a substrate. The infrared reflector with this configuration is used so that the oxide film would face a body to be heated. In addition, infrared light emitted from a heat source can be reflected and collected by a reflection metal of the Au film to the body to be heated. Moreover, since the dielectric film is formed on the substrate, it is possible to prevent Au from dispersing under high temperature and thus to prevent deterioration of the infrared reflector.
摘要翻译：本发明提供一种红外反射器，其具有在基板上依次形成电介质膜，Au（金）膜和氧化物膜的结构。使用具有这种构造的红外反射器，使得氧化膜将面对要加热的主体。此外，从热源发射的红外光可以被Au膜的反射金属反射并收集到被加热体。此外，由于在基板上形成电介质膜，因此可以防止Au在高温下分散，防止红外线反射体的劣化。

10. 发明申请

US20120064653A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL LAYER 审中-公开
标题翻译：氮化物半导体器件和氮化物半导体晶体层的生长方法
公开(公告)号：US20120064653A1
公开(公告)日：2012-03-15
申请号：US13244389
申请日：2011-09-24
申请人： Ken NAKAHARA , Kentaro Tamura
发明人： Ken NAKAHARA , Kentaro Tamura
IPC分类号： H01L33/32 , H01L21/20
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66454 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/12
摘要： A method for manufacturing a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like. The method includes the steps of forming a buffer crystalline layer of the nitride semiconductor made of AlxGayIn1-x-yN (0≦x≦1, 0≦y ≦1 and 0≦x+y≦1), in which both an a-axis and a c-axis are aligned, directly on a substrate lattice-mismatched with the nitride semiconductor without forming an amorphous low temperature buffer layer, by plasma laser deposition(PLD) method, and growing epitaxially the nitride semiconductor layer on the buffer layer so as to form a device such as a nitride semiconductor light emitting diode, by metal organic chemical vapor deposition (MOCVD).
摘要翻译：一种氮化物半导体发光器件，晶体管器件等氮化物半导体器件的制造方法。该方法包括以下步骤：形成由Al x Ga y In 1-x-y N（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1和0＆nlE; x + y＆nlE; 1）制成的氮化物半导体的缓冲晶体层，通过等离子体激光沉积（PLD）方法直接在与氮化物半导体晶格失配的衬底上而不形成非晶体低温缓冲层的方式对准轴，并且在外延上生长缓冲层上的氮化物半导体层以通过金属有机化学气相沉积（MOCVD）形成诸如氮化物半导体发光二极管的器件。

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