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1. 发明授权

US07560007B2 In-situ wafer temperature measurement and control 有权
标题翻译：原位晶圆温度测量与控制
公开(公告)号：US07560007B2
公开(公告)日：2009-07-14
申请号：US11519542
申请日：2006-09-11
申请人： Keith Gaff
发明人： Keith Gaff
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , G01K11/20
摘要： Broadly speaking, the embodiments of the present invention fill the need by providing in-situ wafer temperature measuring method and apparatus. The in-situ substrate temperature measuring method and apparatus provide instant wafer temperature information to allow for continuous monitoring of the etching process. The method and apparatus also allow for instant substrate temperature control to tighten wafer-to-wafer and chamber-to-chamber process distribution. An exemplary cluster tool system is provided. The cluster tool system includes a substrate holding station for holding a substrate capable of emitting signals indicative of substrate temperature, and a processing chamber, the processing chamber being configured to receive the substrate from the substrate holding station and to run through an active process operation when the substrate is in the processing chamber. The cluster tool system also includes a signal detector for detecting the signals emitted by the substrate when the processing chamber runs through the active process operation, the signal detector being configured to collect the emitted signals indicative of the substrate temperature.
摘要翻译：广义地说，本发明的实施例通过提供原位晶片温度测量方法和装置来满足需要。原位衬底温度测量方法和装置提供即时晶片温度信息以允许连续监测蚀刻工艺。该方法和装置还允许即时衬底温度控制以紧固晶片到晶片和腔室到室的过程分布。提供了一种示例性的集群工具系统。集群工具系统包括：用于保持能够发出指示衬底温度的信号的衬底的衬底保持站;以及处理室，所述处理室被配置为从衬底保持站接收衬底并且通过主动工艺操作运行，基板处于处理室中。所述集群工具系统还包括信号检测器，用于当所述处理室经过所述有效过程操作时检测由所述衬底发射的信号，所述信号检测器被配置为收集指示所述衬底温度的发射信号。

2. 发明授权

US07497614B2 Apparatus for determining a temperature of a substrate and methods therefor 有权
标题翻译：用于确定衬底的温度的装置及其方法
公开(公告)号：US07497614B2
公开(公告)日：2009-03-03
申请号：US11829833
申请日：2007-07-27
申请人： Keith Gaff , Neil Martin Paul Benjamin
发明人： Keith Gaff , Neil Martin Paul Benjamin
IPC分类号： G01K11/00 , G01K13/00
CPC分类号： G01K11/20 , G01K11/3213
摘要： An apparatus for measuring a temperature of a substrate is disclosed. The apparatus includes a phosphor material in direct contact with the substrate and in thermal contact with the substrate, the phosphor material producing a fluorescent response in a first wavelength range when exposed to a electromagnetic radiation in a second wavelength range, the fluorescent response decaying at a decay rate that is related to a temperature of the phosphor material, and the phosphor material producing a first set of non volatile byproducts when expose to a plasma.
摘要翻译：公开了一种用于测量衬底温度的装置。该设备包括与衬底直接接触并与衬底热接触的磷光体材料，当暴露于第二波长范围内的电磁辐射时，磷光体材料在第一波长范围内产生荧光响应，荧光反应在与荧光体材料的温度有关的衰减速率，以及在暴露于等离子体时产生第一组非挥发性副产物的荧光体材料。

3. 发明申请

US20070030621A1 Method and apparatus for chuck thermal calibration 有权
标题翻译：卡盘热校准的方法和装置
公开(公告)号：US20070030621A1
公开(公告)日：2007-02-08
申请号：US11198489
申请日：2005-08-05
申请人： Keith Gaff , Neil Paul Benjamin
发明人： Keith Gaff , Neil Paul Benjamin
IPC分类号： H01T23/00 , H01L21/683
CPC分类号： H01L21/6833 , H01L21/67248
摘要： Wafer temperature is measured as a function of time following removal of a heat source to which the wafer is exposed. During the wafer temperature measurements, a gas is supplied at a substantially constant pressure at an interface between the wafer and a chuck upon which the wafer is supported. A chuck thermal characterization parameter value corresponding to the applied gas pressure is determined from the measured wafer temperature as a function of time. Wafer temperatures are measured for a number of applied gas pressures to generate a set of chuck thermal characterization parameter values as a function of gas pressure. A thermal calibration curve for the chuck is generated from the set of measured chuck thermal characterization parameter values and the corresponding gas pressures. The thermal calibration curve for the chuck can be used to tune the gas pressure to obtain a particular wafer temperature during a fabrication process.
摘要翻译：在去除晶片暴露的热源之后，测量晶片温度作为时间的函数。在晶片温度测量期间，在晶片和支撑晶片的卡盘之间的界面处以基本恒定的压力供应气体。根据测量的晶片温度作为时间的函数确定与所施加的气体压力相对应的卡盘热表征参数值。对于多个施加的气体压力测量晶片温度，以产生作为气体压力的函数的一组卡盘热表征参数值。卡盘的热校准曲线是从测量卡盘热特性参数值和相应气体压力的集合中产生的。卡盘的热校准曲线可用于调节气体压力，以在制造过程中获得特定的晶片温度。

4. 发明授权

US10388493B2 Component of a substrate support assembly producing localized magnetic fields 有权
公开(公告)号：US10388493B2
公开(公告)日：2019-08-20
申请号：US13234473
申请日：2011-09-16
申请人： Harmeet Singh , Keith Gaff , Brett Richardson , Sung Lee
发明人： Harmeet Singh , Keith Gaff , Brett Richardson , Sung Lee
IPC分类号： H01F7/20 , H01J37/32 , H01L21/67 , H01L21/311
摘要： A component of a substrate support assembly such as a substrate support or edge ring includes a plurality of current loops incorporated in the substrate support and/or the edge ring. The current loops are laterally spaced apart and extend less than halfway around the substrate support or edge ring with each of the current loops being operable to induce a localized DC magnetic field of field strength less than 20 Gauss above a substrate supported on the substrate support during plasma processing of the substrate. When supplied with DC power, the current loops generate localized DC magnetic fields over the semiconductor substrate so as to locally affect the plasma and compensate for non-uniformity in plasma processing across the substrate.

5. 发明申请

US20130072025A1 COMPONENT OF A SUBSTRATE SUPPORT ASSEMBLY PRODUCING LOCALIZED MAGNETIC FIELDS 审中-公开
标题翻译：基板支撑组件组件生产本地化磁场
公开(公告)号：US20130072025A1
公开(公告)日：2013-03-21
申请号：US13234473
申请日：2011-09-16
申请人： Harmeet Singh , Keith Gaff , Brett Richardson , Sung Lee
发明人： Harmeet Singh , Keith Gaff , Brett Richardson , Sung Lee
IPC分类号： H01L21/3065 , H01F7/20
CPC分类号： H01J37/32669 , H01F7/20 , H01J37/32715 , H01L21/31116 , H01L21/67069
摘要： A component of a substrate support assembly such as a substrate support or edge ring includes a plurality of current loops incorporated in the substrate support and/or the edge ring. The current loops are laterally spaced apart and extend less than halfway around the substrate support or edge ring with each of the current loops being operable to induce a localized DC magnetic field of field strength less than 20 Gauss above a substrate supported on the substrate support during plasma processing of the substrate. When supplied with DC power, the current loops generate localized DC magnetic fields over the semiconductor substrate so as to locally affect the plasma and compensate for non-uniformity in plasma processing across the substrate.
摘要翻译：诸如衬底支撑件或边缘环的衬底支撑组件的部件包括结合在衬底支撑件和/或边缘环中的多个电流回路。电流环横向间隔开并且延伸小于衬底支撑件或边缘环周围的一半，其中每个电流回路可操作以在支撑在衬底支撑件上的衬底上方引起小于20高斯的场强的局部DC磁场，基板的等离子体处理。当提供直流电源时，电流环路在半导体衬底上产生局部DC磁场，以便局部地影响等离子体并且补偿横跨衬底的等离子体处理的不均匀性。

6. 发明授权

US07578616B2 Apparatus for determining a temperature of a substrate and methods therefor 有权
标题翻译：用于确定衬底的温度的装置及其方法
公开(公告)号：US07578616B2
公开(公告)日：2009-08-25
申请号：US11233561
申请日：2005-09-22
申请人： Keith Gaff , Neil Martin Paul Benjamin
发明人： Keith Gaff , Neil Martin Paul Benjamin
IPC分类号： G01K11/00 , G01K1/14 , G01K13/00
CPC分类号： G01K11/20 , G01K11/3213
摘要： An apparatus for measuring a temperature of a substrate is disclosed. The apparatus includes a phosphor material in thermal contact to the substrate, the phosphor material producing a fluorescent response in a first wavelength range when exposed to a electromagnetic radiation in a second wavelength range, the fluorescent response decaying at a decay rate that is related to a temperature of the phosphor material, and the phosphor material producing a first set of non volatile byproducts when exposed to a plasma. The apparatus also includes a barrier window positioned between the phosphor material and a plasma, wherein the barrier window allows at least a portion of the first wavelength and the second wavelength to be transmitted, and wherein the barrier window produces a second set of non volatile byproducts that is less than the first set of non volatile byproducts when exposed to the plasma, wherein when the electromagnetic radiation is transmitted to the phosphor material through the barrier window, the temperature is determined from the decay rate of the fluorescent response.
摘要翻译：公开了一种用于测量衬底温度的装置。该装置包括与衬底热接触的磷光体材料，当暴露于第二波长范围内的电磁辐射时，荧光体材料在第一波长范围内产生荧光响应，荧光响应以衰减速率衰减，其衰减速率与荧光体材料的温度，以及当暴露于等离子体时产生第一组非挥发性副产物的荧光体材料。该设备还包括位于荧光体材料和等离子体之间的屏障窗口，其中屏障窗口允许第一波长和第二波长的至少一部分被传输，并且其中屏障窗口产生第二组非挥发性副产物当暴露于等离子体时，其小于第一组非挥发性副产物，其中当电磁辐射通过屏障窗口传输到荧光体材料时，根据荧光响应的衰减速率来确定温度。

7. 发明申请

US20080064126A1 In-situ wafer temperature measurement and control 有权
标题翻译：原位晶圆温度测量与控制
公开(公告)号：US20080064126A1
公开(公告)日：2008-03-13
申请号：US11519542
申请日：2006-09-11
申请人： Keith Gaff
发明人： Keith Gaff
IPC分类号： H01L21/66
CPC分类号： H01L21/67248 , G01K11/20
摘要： Broadly speaking, the embodiments of the present invention fill the need by providing in-situ wafer temperature measuring method and apparatus. The in-situ substrate temperature measuring method and apparatus provide instant wafer temperature information to allow for continuous monitoring of the etching process. The method and apparatus also allow for instant substrate temperature control to tighten wafer-to-wafer and chamber-to-chamber process distribution. An exemplary cluster tool system is provided. The cluster tool system includes a substrate holding station for holding a substrate capable of emitting signals indicative of substrate temperature, and a processing chamber, the processing chamber being configured to receive the substrate from the substrate holding station and to run through an active process operation when the substrate is in the processing chamber. The cluster tool system also includes a signal detector for detecting the signals emitted by the substrate when the processing chamber runs through the active process operation, the signal detector being configured to collect the emitted signals indicative of the substrate temperature.
摘要翻译：广义地说，本发明的实施例通过提供原位晶片温度测量方法和装置来满足需要。原位衬底温度测量方法和装置提供即时晶片温度信息以允许连续监测蚀刻工艺。该方法和装置还允许即时衬底温度控制以紧固晶片到晶片和腔室到室的过程分布。提供了一种示例性的集群工具系统。集群工具系统包括：用于保持能够发出指示衬底温度的信号的衬底的衬底保持站;以及处理室，所述处理室被配置为从衬底保持站接收衬底并且通过主动工艺操作运行，基板处于处理室中。所述集群工具系统还包括信号检测器，用于当所述处理室经过所述有效过程操作时检测由所述衬底发射的信号，所述信号检测器被配置为收集指示所述衬底温度的发射信号。

8. 发明申请

US20080019418A1 APPARATUS FOR DETERMINING A TEMPERATURE OF A SUBSTRATE AND METHODS THEREFOR 有权
标题翻译：用于确定基材温度的装置及其方法
公开(公告)号：US20080019418A1
公开(公告)日：2008-01-24
申请号：US11829833
申请日：2007-07-27
申请人： Keith Gaff , Neil Benjamin
发明人： Keith Gaff , Neil Benjamin
IPC分类号： G01K11/00
CPC分类号： G01K11/20 , G01K11/3213
摘要： An apparatus for measuring a temperature of a substrate is disclosed. The apparatus includes a phosphor material in direct contact with the substrate and in thermal contact with the substrate, the phosphor material producing a fluorescent response in a first wavelength range when exposed to a electromagnetic radiation in a second wavelength range, the fluorescent response decaying at a decay rate that is related to a temperature of the phosphor material, and the phosphor material producing a first set of non volatile byproducts when exposed to a plasma.
摘要翻译：公开了一种用于测量衬底温度的装置。该设备包括与衬底直接接触并与衬底热接触的磷光体材料，当暴露于第二波长范围内的电磁辐射时，磷光体材料在第一波长范围内产生荧光响应，荧光反应在与荧光体材料的温度有关的衰减速率，以及暴露于等离子体时产生第一组非挥发性副产物的荧光体材料。

9. 发明授权

US08637794B2 Heating plate with planar heating zones for semiconductor processing 有权
标题翻译：加热板采用平面加热区进行半导体加工
公开(公告)号：US08637794B2
公开(公告)日：2014-01-28
申请号：US12582991
申请日：2009-10-21
申请人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
发明人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC分类号： H05B3/10
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

10. 发明申请

US20110092072A1 HEATING PLATE WITH PLANAR HEATING ZONES FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：具有平面加热区域的加热板用于半导体加工
公开(公告)号：US20110092072A1
公开(公告)日：2011-04-21
申请号：US12582991
申请日：2009-10-21
申请人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
发明人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC分类号： H01L21/3065 , H01C17/00 , H01C17/06 , B05C13/00 , H01L21/306 , C23C14/34
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

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