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1. 发明授权

US08304848B2 Infrared imaging device and method of manufacturing the same 有权
标题翻译：红外成像装置及其制造方法
公开(公告)号：US08304848B2
公开(公告)日：2012-11-06
申请号：US12883732
申请日：2010-09-16
申请人： Kazuhiro Suzuki , Ikuo Fujiwara , Keita Sasaki , Honam Kwon , Hitoshi Yagi , Hiroto Honda , Koichi Ishii , Masako Ogata , Risako Ueno , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Ikuo Fujiwara , Keita Sasaki , Honam Kwon , Hitoshi Yagi , Hiroto Honda , Koichi Ishii , Masako Ogata , Risako Ueno , Hideyuki Funaki
IPC分类号： H01L31/00 , H01L31/04
CPC分类号： G01J5/02 , G01J5/023 , G01J5/024 , H04N5/33
摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.
摘要翻译：某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

2. 发明授权

US08067740B2 Image sensor and manufacturing method thereof 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08067740B2
公开(公告)日：2011-11-29
申请号：US12508846
申请日：2009-07-24
申请人： Keita Sasaki , Hideyuki Funaki , Hiroto Honda , Ikuo Fujiwara , Koichi Ishii , Hitoshi Yagi
发明人： Keita Sasaki , Hideyuki Funaki , Hiroto Honda , Ikuo Fujiwara , Koichi Ishii , Hitoshi Yagi
IPC分类号： H01L31/02
CPC分类号： H01L27/14669 , H01L27/1203 , H01L27/14683
摘要： An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.
摘要翻译：图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方，第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件，支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素，而不经由空腔，其中多个第一像素和多个第二像素被二维布置以形成像素区域，并且每个第二像素与第一个像素。

3. 发明授权

US08629396B2 Uncooled infrared imaging element and manufacturing method thereof 有权
标题翻译：未冷却的红外成像元件及其制造方法
公开(公告)号：US08629396B2
公开(公告)日：2014-01-14
申请号：US13235388
申请日：2011-09-18
申请人： Masako Ogata , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
发明人： Masako Ogata , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14649 , H01L27/14632 , H01L27/14687
摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.
摘要翻译：非制冷红外成像元件包括像素区域，器件区域和支撑衬底。像素区域包括热敏像素。热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。驱动电路驱动热敏像素。读出电路检测热敏像素的信号。支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

4. 发明申请

US20120007205A1 INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：红外成像装置及其制造方法
公开(公告)号：US20120007205A1
公开(公告)日：2012-01-12
申请号：US12883732
申请日：2010-09-16
申请人： Kazuhiro Suzuki , Ikuo Fujiwara , Keita Sasaki , Honam Kwon , Hitoshi Yagi , Hiroto Honda , Koichi Ishii , Masako Ogata , Risako Ueno , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Ikuo Fujiwara , Keita Sasaki , Honam Kwon , Hitoshi Yagi , Hiroto Honda , Koichi Ishii , Masako Ogata , Risako Ueno , Hideyuki Funaki
IPC分类号： H01L31/101 , H01L31/18
CPC分类号： G01J5/02 , G01J5/023 , G01J5/024 , H04N5/33
摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.
摘要翻译：某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

5. 发明授权

US08338902B2 Uncooled infrared image sensor 有权
标题翻译：未冷却的红外图像传感器
公开(公告)号：US08338902B2
公开(公告)日：2012-12-25
申请号：US13050512
申请日：2011-03-17
申请人： Honam Kwon , Hideyuki Funaki , Hiroto Honda , Hitoshi Yagi , Ikuo Fujiwara , Masaki Atsuta , Kazuhiro Suzuki , Keita Sasaki , Koichi Ishii
发明人： Honam Kwon , Hideyuki Funaki , Hiroto Honda , Hitoshi Yagi , Ikuo Fujiwara , Masaki Atsuta , Kazuhiro Suzuki , Keita Sasaki , Koichi Ishii
IPC分类号： H01L31/024
CPC分类号： H01L27/14649 , G01J5/007 , G01J5/20 , G01J2005/068
摘要： An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.
摘要翻译：根据实施例的非制冷红外图像传感器包括：形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元，并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。每个像素单元包括：第一红外线吸收膜和第一热敏元件。参考像素单元包括：第二红外线吸收膜和第二热敏元件，第二热敏元件具有与第一热敏元件的特性相同的特性。互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。

6. 发明授权

US08415622B2 Infrared imaging element 有权
标题翻译：红外成像元件
公开(公告)号：US08415622B2
公开(公告)日：2013-04-09
申请号：US13414941
申请日：2012-03-08
申请人： Kazuhiro Suzuki , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
发明人： Kazuhiro Suzuki , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
IPC分类号： H01L25/00
CPC分类号： H01L27/14618 , G01J5/024 , H01L27/1461 , H01L27/14636 , H01L27/1464 , H01L27/14649 , H01L2924/0002 , H01L2924/00
摘要： An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
摘要翻译：根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热，由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。在第二基板和红外线检测单元之间形成第二空腔。

7. 发明申请

US20120228497A1 INFRARED IMAGING ELEMENT 有权
标题翻译：红外成像元件
公开(公告)号：US20120228497A1
公开(公告)日：2012-09-13
申请号：US13414941
申请日：2012-03-08
申请人： Kazuhiro SUZUKI , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
发明人： Kazuhiro SUZUKI , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
IPC分类号： H01L27/146
CPC分类号： H01L27/14618 , G01J5/024 , H01L27/1461 , H01L27/14636 , H01L27/1464 , H01L27/14649 , H01L2924/0002 , H01L2924/00
摘要： An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
摘要翻译：根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热，由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。在第二基板和红外线检测单元之间形成第二空腔。

8. 发明申请

US20120228496A1 UNCOOLED INFRARED IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：未经处理的红外成像元件及其制造方法
公开(公告)号：US20120228496A1
公开(公告)日：2012-09-13
申请号：US13235388
申请日：2011-09-18
申请人： Masako OGATA , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
发明人： Masako OGATA , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14649 , H01L27/14632 , H01L27/14687
摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.
摘要翻译：非制冷红外成像元件包括像素区域，器件区域和支撑衬底。像素区域包括热敏像素。热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。驱动电路驱动热敏像素。读出电路检测热敏像素的信号。支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

9. 发明申请

US20130093902A1 INFRARED SOLID STATE IMAGING DEVICE 审中-公开
标题翻译：红外固态成像装置
公开(公告)号：US20130093902A1
公开(公告)日：2013-04-18
申请号：US13648376
申请日：2012-10-10
申请人： Hiroto HONDA , Hideyuki Funaki , Keita Sasaki , Kazuhiro Suzuki , Masaki Atsuta , Koichi Ishii , Ikuo Fujiwara
发明人： Hiroto HONDA , Hideyuki Funaki , Keita Sasaki , Kazuhiro Suzuki , Masaki Atsuta , Koichi Ishii , Ikuo Fujiwara
IPC分类号： H04N5/33
CPC分类号： H04N5/33 , H04N5/3597
摘要： An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant α in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1−α) so that an infrared image with less afterimage is provided.
摘要翻译：一种红外固体摄像装置，具备：具有热敏像素的红外线检测元件单元，对由红外线检测元件单元得到的红外图像信号进行模数变换的AD转换单元;以及数字信号处理单元，图像信号转换成数字信号。数字信号处理单元存储从数字信号产生并且在紧邻当前帧之前的帧中获取的图像值，减去通过将在当前帧之前的帧中获取的图像值乘以预定常数α而获得的图像值在从当前帧中获取的图像值的0到1的范围内，并且进行将通过减法获得的合成图像值乘以1 /（1-α）的处理，使得提供具有较少余像的红外图像。

10. 发明申请

US20090236526A1 INFRARED RAY SENSOR ELEMENT 审中-公开
标题翻译：红外辐射传感器元件
公开(公告)号：US20090236526A1
公开(公告)日：2009-09-24
申请号：US12405497
申请日：2009-03-17
申请人： Keita Sasaki , Hiroto Honda , Hideyuki Funaki , Ikuo Fujiwara , Kazuhiro Suzuki
发明人： Keita Sasaki , Hiroto Honda , Hideyuki Funaki , Ikuo Fujiwara , Kazuhiro Suzuki
IPC分类号： H01L27/14
CPC分类号： G01J5/02 , G01J5/023 , G01J5/024 , G01J5/045 , G01J5/08 , G01J5/0853
摘要： An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part.
摘要翻译：一种红外线传感器元件包括：第一信号布线部，包括第一信号线，设置在与设置有凹部的区域不同的半导体基板的第一区域上; 第二信号布线部分，包括第二信号线，并设置在第一区域上，以与第一信号布线部分相交; 支撑件，其包括设置在所述凹部上方的支撑布线部，并且包括在其第一端处电连接到所述第一信号线的第一线和与所述第一线平行布置的与所述第一线绝缘的第二线，以及在其第一端电连接到第二信号线; 电连接到第一和第二导线的第二端的热电换能器; 设置在所述热电换能器上的红外线吸收层; 以及设置在所述凹部上的检测单元。

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