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1. 发明授权

US08629396B2 Uncooled infrared imaging element and manufacturing method thereof 有权
标题翻译：未冷却的红外成像元件及其制造方法
公开(公告)号：US08629396B2
公开(公告)日：2014-01-14
申请号：US13235388
申请日：2011-09-18
申请人： Masako Ogata , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
发明人： Masako Ogata , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14649 , H01L27/14632 , H01L27/14687
摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.
摘要翻译：非制冷红外成像元件包括像素区域，器件区域和支撑衬底。像素区域包括热敏像素。热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。驱动电路驱动热敏像素。读出电路检测热敏像素的信号。支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

2. 发明申请

US20120228496A1 UNCOOLED INFRARED IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：未经处理的红外成像元件及其制造方法
公开(公告)号：US20120228496A1
公开(公告)日：2012-09-13
申请号：US13235388
申请日：2011-09-18
申请人： Masako OGATA , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
发明人： Masako OGATA , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14649 , H01L27/14632 , H01L27/14687
摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.
摘要翻译：非制冷红外成像元件包括像素区域，器件区域和支撑衬底。像素区域包括热敏像素。热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。驱动电路驱动热敏像素。读出电路检测热敏像素的信号。支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

3. 发明申请

US20120007205A1 INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：红外成像装置及其制造方法
公开(公告)号：US20120007205A1
公开(公告)日：2012-01-12
申请号：US12883732
申请日：2010-09-16
申请人： Kazuhiro Suzuki , Ikuo Fujiwara , Keita Sasaki , Honam Kwon , Hitoshi Yagi , Hiroto Honda , Koichi Ishii , Masako Ogata , Risako Ueno , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Ikuo Fujiwara , Keita Sasaki , Honam Kwon , Hitoshi Yagi , Hiroto Honda , Koichi Ishii , Masako Ogata , Risako Ueno , Hideyuki Funaki
IPC分类号： H01L31/101 , H01L31/18
CPC分类号： G01J5/02 , G01J5/023 , G01J5/024 , H04N5/33
摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.
摘要翻译：某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

4. 发明授权

US08415622B2 Infrared imaging element 有权
标题翻译：红外成像元件
公开(公告)号：US08415622B2
公开(公告)日：2013-04-09
申请号：US13414941
申请日：2012-03-08
申请人： Kazuhiro Suzuki , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
发明人： Kazuhiro Suzuki , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
IPC分类号： H01L25/00
CPC分类号： H01L27/14618 , G01J5/024 , H01L27/1461 , H01L27/14636 , H01L27/1464 , H01L27/14649 , H01L2924/0002 , H01L2924/00
摘要： An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
摘要翻译：根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热，由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。在第二基板和红外线检测单元之间形成第二空腔。

5. 发明申请

US20120228497A1 INFRARED IMAGING ELEMENT 有权
标题翻译：红外成像元件
公开(公告)号：US20120228497A1
公开(公告)日：2012-09-13
申请号：US13414941
申请日：2012-03-08
申请人： Kazuhiro SUZUKI , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
发明人： Kazuhiro SUZUKI , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
IPC分类号： H01L27/146
CPC分类号： H01L27/14618 , G01J5/024 , H01L27/1461 , H01L27/14636 , H01L27/1464 , H01L27/14649 , H01L2924/0002 , H01L2924/00
摘要： An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
摘要翻译：根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热，由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。在第二基板和红外线检测单元之间形成第二空腔。

6. 发明授权

US08304848B2 Infrared imaging device and method of manufacturing the same 有权
标题翻译：红外成像装置及其制造方法
公开(公告)号：US08304848B2
公开(公告)日：2012-11-06
申请号：US12883732
申请日：2010-09-16
申请人： Kazuhiro Suzuki , Ikuo Fujiwara , Keita Sasaki , Honam Kwon , Hitoshi Yagi , Hiroto Honda , Koichi Ishii , Masako Ogata , Risako Ueno , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Ikuo Fujiwara , Keita Sasaki , Honam Kwon , Hitoshi Yagi , Hiroto Honda , Koichi Ishii , Masako Ogata , Risako Ueno , Hideyuki Funaki
IPC分类号： H01L31/00 , H01L31/04
CPC分类号： G01J5/02 , G01J5/023 , G01J5/024 , H04N5/33
摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.
摘要翻译：某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

7. 发明授权

US08338902B2 Uncooled infrared image sensor 有权
标题翻译：未冷却的红外图像传感器
公开(公告)号：US08338902B2
公开(公告)日：2012-12-25
申请号：US13050512
申请日：2011-03-17
申请人： Honam Kwon , Hideyuki Funaki , Hiroto Honda , Hitoshi Yagi , Ikuo Fujiwara , Masaki Atsuta , Kazuhiro Suzuki , Keita Sasaki , Koichi Ishii
发明人： Honam Kwon , Hideyuki Funaki , Hiroto Honda , Hitoshi Yagi , Ikuo Fujiwara , Masaki Atsuta , Kazuhiro Suzuki , Keita Sasaki , Koichi Ishii
IPC分类号： H01L31/024
CPC分类号： H01L27/14649 , G01J5/007 , G01J5/20 , G01J2005/068
摘要： An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.
摘要翻译：根据实施例的非制冷红外图像传感器包括：形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元，并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。每个像素单元包括：第一红外线吸收膜和第一热敏元件。参考像素单元包括：第二红外线吸收膜和第二热敏元件，第二热敏元件具有与第一热敏元件的特性相同的特性。互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。

8. 发明申请

US20130248714A1 UNCOOLED INFRARED IMAGING DEVICE 审中-公开
标题翻译：未经处理的红外成像装置
公开(公告)号：US20130248714A1
公开(公告)日：2013-09-26
申请号：US13728009
申请日：2012-12-27
申请人： Hiroto Honda , Kazuhiro Suzuki , Hideyuki Funaki , Masaki Atsuta , Keita Sasaki , Koichi Ishii , Honam Kwon
发明人： Hiroto Honda , Kazuhiro Suzuki , Hideyuki Funaki , Masaki Atsuta , Keita Sasaki , Koichi Ishii , Honam Kwon
IPC分类号： H01L27/146 , G01J5/20
CPC分类号： G01J5/12 , G01J5/023 , G01J5/20 , G01J5/22 , G01J2005/0077 , H01L27/14649 , H04N5/33
摘要： An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.
摘要翻译：根据实施例的非冷却红外成像装置包括：形成在半导体衬底上并布置在至少一行中的参考像素; 以及布置在其余行中的红外检测像素，并检测入射的红外线。每个参考像素包括位于第一凹部上方的第一单元。第一电池包括具有第一红外线吸收膜的第一热电转换单元; 和第一热电转换元件。每个红外检测像素包括位于第二凹部上方的第二单元，并且具有比第一单元更大的面积。第二单元包括：位于第二凹部上方的第二热电转换单元; 以及第一和第二支撑结构单元，其在第二凹部上方支撑第二热电转换单元。第二热电转换单元包括：第二红外线吸收膜; 和第二热电转换元件。

9. 发明授权

US08735821B2 Infrared imaging device and infrared imaging apparatus using it 有权
标题翻译：红外成像装置和红外成像装置使用它
公开(公告)号：US08735821B2
公开(公告)日：2014-05-27
申请号：US13428746
申请日：2012-03-23
申请人： Koichi Ishii , Kazuhiro Suzuki , Hiroto Honda , Hideyuki Funaki , Risako Ueno , Honam Kwon
发明人： Koichi Ishii , Kazuhiro Suzuki , Hiroto Honda , Hideyuki Funaki , Risako Ueno , Honam Kwon
IPC分类号： G01J5/20 , H01L27/146 , G01J5/14
CPC分类号： G01J5/14 , G01J5/04 , G01J5/045 , G01J5/08 , G01J5/0806 , G01J5/0853 , G01J5/10 , G01J5/22 , H01L27/14649 , H01L2224/48091 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： An infrared imaging device, including: connection wiring portions arranged in matrix form on a substrate which is mounted in a package; first and second infrared detecting portions configured to convert intensity of absorbed infrared radiation into respective first and second signals, the second infrared detecting portion being smaller in thermal conductance than the first infrared detecting portion; and a lid member attached to the package so as to define an air-tight gap with the substrate, the connection wiring portions, the first and second infrared detecting portions being accommodated within the gap; wherein a degree-of-vacuum is measured within the gap and a warning issued based on the measured degree-of-vacuum.
摘要翻译：一种红外成像装置，包括：以矩阵形式布置在安装在包装中的基板上的连接布线部分; 第一红外线检测部和第二红外线检测部，被配置为将吸收的红外辐射的强度转换为相应的第一和第二信号，第二红外线检测部的导热性比第一红外线检测部小。以及盖构件，其附接到所述封装件以限定与所述基板的气密间隙，所述连接布线部分，所述第一和第二红外检测部分容纳在所述间隙内; 其中在所述间隙内测量真空度，并且基于所测量的真空度发出警告。

10. 发明申请

US20120056291A1 IMAGING DEVICE, IMAGING MODULE AND METHOD FOR MANUFACTURING IMAGING DEVICE 有权
标题翻译：成像装置，成像模块和制造成像装置的方法
公开(公告)号：US20120056291A1
公开(公告)日：2012-03-08
申请号：US13051413
申请日：2011-03-18
申请人： Kazuhiro Suzuki , Risako Ueno , Honam Kwon , Koichi Ishii , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Risako Ueno , Honam Kwon , Koichi Ishii , Hideyuki Funaki
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14618 , H01L27/14649 , H01L2224/13
摘要： According to one embodiment, an imaging device includes a substrate, a photodetecting portion, a circuit portion and a through interconnect. The substrate has a first major surface, a second major surface on a side opposite to the first major surface, a recess portion provided on the first major surface and retreated in a first direction going from the first major surface to the second major surface, and a through hole communicating with the first major surface and the second major surface and extending in the first direction. The photodetecting portion is provided above the recess portion and away from the substrate. The circuit portion is electrically connected to the photodetecting portion and provided on the first major surface. The through interconnect is electrically connected to the circuit portion and provided inside the through hole. The recess portion has a first inclined surface. The through hole has a second inclined surface.
摘要翻译：根据一个实施例，成像装置包括基板，光电检测部分，电路部分和通孔互连。基板具有第一主表面，与第一主表面相对的一侧的第二主表面，设置在第一主表面上并沿着从第一主表面到第二主表面的第一方向退回的凹部，以及与所述第一主表面和所述第二主表面连通并且沿所述第一方向延伸的通孔。光电检测部分设置在凹部的上方并远离基板。电路部分电连接到光电检测部分并设置在第一主表面上。通孔互连电连接到电路部分并设置在通孔的内部。凹部具有第一倾斜面。通孔具有第二倾斜面。

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