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1. 发明授权

US07846637B2 Material for forming resist protective film for use in liquid immersion lithography process and method for forming resist pattern using the protective film 有权
标题翻译：用于形成用于液浸光刻工艺的抗蚀保护膜的材料和使用该保护膜形成抗蚀剂图案的方法
公开(公告)号：US07846637B2
公开(公告)日：2010-12-07
申请号：US11587509
申请日：2005-04-25
申请人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
发明人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
IPC分类号： G03F7/09 , C08F12/20
CPC分类号： G03F7/11 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/2041
摘要： The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.
摘要翻译：液浸光刻工艺被配置为通过在其中折射率高于液浸光刻液的液体光刻液体的预定厚度的条件下将抗蚀剂膜暴露于平版曝光光下来改善抗蚀剂图案分辨率的空气并且小于抗蚀剂膜的空气至少在到达抗蚀剂膜的光刻曝光光的路径中的抗蚀剂膜上被干涉，在要使用的抗蚀剂膜的表面上形成保护膜。因此，在液浸光刻工序中，可以形成各种浸渍液，作为代表例的水，同时防止使用的抗蚀剂膜和浸渍液的劣化，处理工序的数量不是增加，然后抗蚀剂图案具有较高的分辨能力。

2. 发明申请

US20080032202A1 Material for Forming Resist Protective Film for Use in Liquid Immersion Lithography Process and Method for Forming Resist Pattern Using the Protective Film 有权
标题翻译：用于液浸式平版印刷工艺中形成抗蚀保护膜的材料及使用保护膜形成抗蚀剂图案的方法
公开(公告)号：US20080032202A1
公开(公告)日：2008-02-07
申请号：US11587509
申请日：2005-04-25
申请人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
发明人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
IPC分类号： C08F20/10 , C08F22/00 , C08F36/16 , G03F7/11 , H01L21/027
CPC分类号： G03F7/11 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/2041
摘要： The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.
摘要翻译：液浸光刻工艺被配置为通过在其中折射率高于液浸光刻液的液体光刻液体的预定厚度的条件下将抗蚀剂膜暴露于平版曝光光下来改善抗蚀剂图案分辨率的空气并且小于抗蚀剂膜的空气至少在到达抗蚀剂膜的光刻曝光光的路径中的抗蚀剂膜上被干涉，在要使用的抗蚀剂膜的表面上形成保护膜。因此，在液浸光刻工序中，可以形成各种浸渍液，作为代表例的水，同时防止使用的抗蚀剂膜和浸渍液的劣化，处理工序的数量不是增加，然后抗蚀剂图案具有较高的分辨能力。

3. 发明申请

US20070031755A1 Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material, and method for forming resist pattern using such resist-protec- ting film 审中-公开
标题翻译：用于形成浸渍曝光工艺的抗蚀保护膜的材料，由这种材料制成的抗蚀保护膜，以及使用这种抗蚀保护膜形成抗蚀剂图案的方法
公开(公告)号：US20070031755A1
公开(公告)日：2007-02-08
申请号：US10568951
申请日：2004-08-25
申请人： Taku Hirayama , Kotaro Endo , Masaaki Yoshida , Kazumasa Wakiya
发明人： Taku Hirayama , Kotaro Endo , Masaaki Yoshida , Kazumasa Wakiya
IPC分类号： G03C1/00
CPC分类号： G03F7/2041 , G03F7/11
摘要： The resist protective film forming material for liquid immersion lithography is provided, which is suitable when the non-aqueous solution with a high transparency and high refractive index exemplified by the fluorinated liquid is used. The resist protective film forming material includes at least one component selected from water-soluble and alkali-soluble film forming components. The liquid immersion lithography process improves the resolution of resist patterns by irradiating a light beam on a resist film interposing a given thickness of the non-aqueous solution with a refractive index higher than that of the air at least on the resist film in a path, along where the lithography exposing light beam passes to the resist film.
摘要翻译：提供了用于液浸光刻的抗蚀剂保护膜形成材料，当使用以氟化液体为例说明的具有高透明度和高折射率的非水溶液时，这是合适的。抗蚀剂保护膜形成材料包括选自水溶性和碱溶性成膜组分中的至少一种成分。液浸式光刻工艺通过至少在路径上的抗蚀剂膜上照射介于非空气的折射率高于非水溶液的给定厚度的抗蚀剂膜上的光束来提高抗蚀剂图案的分辨率，沿着光刻曝光光束到达抗蚀剂膜的方向。

4. 发明申请

US20090011375A1 IMMERSION LIQUID FOR LIQUID IMMERSION LITHOGRAPHY PROCESS AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 审中-公开
标题翻译：用于液体渗透光刻方法的浸渍液及其形成耐蚀图案的方法
公开(公告)号：US20090011375A1
公开(公告)日：2009-01-08
申请号：US11597124
申请日：2005-05-24
申请人： Taku Hirayama , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
发明人： Taku Hirayama , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
IPC分类号： G03F7/20 , G03C5/00
CPC分类号： G03F7/2041
摘要： A liquid immersion lithography process is provided. In particular, the liquid immersion lithography process is one in which the resolution of a resist pattern is improved by exposure to light through a liquid having a refractive index higher than that of air and a predetermined thickness, while being arranged on at least a resist film in a pathway allowing exposure light for lithography to reach to the resist film. Accordingly, both the resist film and the liquid used are prevented from deterioration in liquid immersion lithography. Thus, the formation of a high-resolution resist pattern can be attained with liquid immersion lithography. Therefore, the liquid comprised of a silicon-based liquid transparent to exposure light used in the lithography process is employed as an immersion liquid for liquid immersion lithography.
摘要翻译：提供液浸光刻工艺。特别地，液浸式光刻法是通过使折射率高于空气和预定厚度的液体暴露于光而提高抗蚀剂图案的分辨率的方法，同时至少设置抗蚀剂膜在允许用于光刻的曝光光到达抗蚀剂膜的途径中。因此，可以防止所使用的抗蚀剂膜和液体在液浸光刻中的劣化。因此，通过液浸光刻技术可以获得高分辨率抗蚀图案的形成。因此，采用在光刻工艺中使用的曝光用透光性的硅系液体作为液浸式光刻用浸液。

5. 发明申请

US20080311523A1 Material for Formation of Resist Protection Film and Method of Forming Resist Pattern Therewith 失效
标题翻译：抗蚀剂保护膜形成材料及其形成方法
公开(公告)号：US20080311523A1
公开(公告)日：2008-12-18
申请号：US11658900
申请日：2005-07-29
申请人： Kotaro Endo , Masaaki Yoshida , Keita Ishizuka
发明人： Kotaro Endo , Masaaki Yoshida , Keita Ishizuka
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/2041 , G03F7/11
摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.
摘要翻译：在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。此外，可以应用与高折射率浸液介质组合使用的高折射率液浸介质，从而可以进一步提高图案精度。使用包含与浸渍有抗蚀剂膜的液体基本上不相容的特性的丙烯酸树脂组分的组合物，特别是水，并且也可溶于碱性，在所用的抗蚀剂膜的表面上形成保护膜。

6. 发明授权

US07879529B2 Material for formation of resist protection film and method of forming resist pattern therewith 失效
标题翻译：用于形成抗蚀剂保护膜的材料及其形成抗蚀剂图案的方法
公开(公告)号：US07879529B2
公开(公告)日：2011-02-01
申请号：US11658900
申请日：2005-07-29
申请人： Kotaro Endo , Masaaki Yoshida , Keita Ishizuka
发明人： Kotaro Endo , Masaaki Yoshida , Keita Ishizuka
IPC分类号： G03F7/11 , G03F7/26 , C07D265/00 , C07D285/00
CPC分类号： G03F7/2041 , G03F7/11
摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.
摘要翻译：在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。此外，可以应用与高折射率浸液介质组合使用的高折射率液浸介质，从而可以进一步提高图案精度。使用包含与浸渍有抗蚀剂膜的液体基本上不相容的特性的丙烯酸树脂组分的组合物，特别是水，并且也可溶于碱性，在所用的抗蚀剂膜的表面上形成保护膜。

7. 发明申请

US20090197199A1 MATERIAL FOR FORMING RESIST PROTECTIVE FILM AND METHOD FOR FORMING RESIST PATTERN USING SAME 有权
标题翻译：用于形成耐腐蚀膜的材料和使用其形成耐蚀图案的方法
公开(公告)号：US20090197199A1
公开(公告)日：2009-08-06
申请号：US11659006
申请日：2005-07-29
申请人： Keita Ishizuka , Kotaro Endo , Tomoyuki Hirano
发明人： Keita Ishizuka , Kotaro Endo , Tomoyuki Hirano
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/128
摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.
摘要翻译：在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。使用碱溶性聚合物，交联剂和能够溶解至少构成成分的溶剂，制备组合物，并使用该组合物在所使用的抗蚀剂膜的表面上形成保护膜。

8. 发明授权

US07951523B2 Material for forming resist protective film and method for forming resist pattern using same 有权
标题翻译：用于形成抗蚀剂保护膜的材料和使用其形成抗蚀剂图案的方法
公开(公告)号：US07951523B2
公开(公告)日：2011-05-31
申请号：US11659006
申请日：2005-07-29
申请人： Keita Ishizuka , Kotaro Endo , Tomovuki Hiranoa
发明人： Keita Ishizuka , Kotaro Endo , Tomovuki Hiranoa
IPC分类号： G03F7/11 , C07D265/00 , C07D285/00
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/128
摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.
摘要翻译：在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。使用碱溶性聚合物，交联剂和能够溶解至少构成成分的溶剂，制备组合物，并使用该组合物在所使用的抗蚀剂膜的表面上形成保护膜。

9. 发明申请

US20060166130A1 Photoresist composition and method for forming resist pattern using the same 失效
标题翻译：光刻胶组合物及其形成方法
公开(公告)号：US20060166130A1
公开(公告)日：2006-07-27
申请号：US10547427
申请日：2004-03-24
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
IPC分类号： G03C1/76
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.
摘要翻译： 1.一种光致抗蚀剂组合物，其含有含有具有氟原子或氟代烷基（i）和醇羟基（ii）的脂环族基团的碱溶性结构单元（a1）的聚合物（A），其碱溶性为可以通过酸的作用而变化; 通过光照射产生酸的酸产生剂（B）; 和具有氟原子的溶解抑制剂（C）和/或选自具有极性基团的叔胺（d1），具有7以上的叔烷基胺（d2）和15以上的含氮化合物（D）或更少的碳原子或铵盐（d3）。该组合物具有能够通过光刻作为半导体集成电路的图案处理精度而实现90nm或更小的线和空间（1：1）的良好形状的抗蚀剂性质。

10. 发明授权

US07700257B2 Photoresist composition and resist pattern formation method by the use thereof 失效
标题翻译：光刻胶组合物和抗蚀剂图案形成方法
公开(公告)号：US07700257B2
公开(公告)日：2010-04-20
申请号：US10547427
申请日：2004-03-24
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.
摘要翻译： 1.一种光致抗蚀剂组合物，其含有含有具有氟原子或氟代烷基（i）和醇羟基（ii）的脂环族基团的碱溶性结构单元（a1）的聚合物（A），其碱溶性为可以通过酸的作用而变化; 通过光照射产生酸的酸产生剂（B）; 和具有氟原子的溶解抑制剂（C）和/或选自具有极性基团的叔胺（d1），具有7以上的叔烷基胺（d2）和15以上的含氮化合物（D）或更少的碳原子或铵盐（d3）。该组合物具有能够通过光刻作为半导体集成电路的图案处理精度而实现90nm或更小的线和空间（1：1）的良好形状的抗蚀剂性质。

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