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1. 发明授权

US09543928B2 Gate driving circuit and method for driving semiconductor device 有权
标题翻译：栅极驱动电路及其驱动方法
公开(公告)号：US09543928B2
公开(公告)日：2017-01-10
申请号：US12189319
申请日：2008-08-11
申请人： Keisuke Yamashiro , Hiromu Takubo
发明人： Keisuke Yamashiro , Hiromu Takubo
IPC分类号： H03K3/012 , H03K17/16
CPC分类号： H03K3/012 , H03K17/168
摘要： A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET.
摘要翻译：栅极驱动电路和方法可以改善噪声与半导体器件的关断开关导致的损耗之间的权衡关系。栅极驱动电路包括第一和第二串联电路。第一串联电路包括串联连接的第一和第二MOSFET。半导体器件的栅极端子连接到第一MOSFET的负电位侧和第二MOSFET的正电位侧。半导体器件的发射极连接到第二MOSFET的负电位侧或直流电源。第二串联电路包括串联连接的电容器和第三MOSFET。第二串联电路与第二MOSFET并联连接。通过接通第二和第三MOSFET并关闭第一个MOSFET来使半导体器件关断。

2. 发明授权

US07425757B2 Semiconductor power module 有权
标题翻译：半导体电源模块
公开(公告)号：US07425757B2
公开(公告)日：2008-09-16
申请号：US11017187
申请日：2004-12-20
申请人： Hiromu Takubo
发明人： Hiromu Takubo
IPC分类号： H01L23/02
CPC分类号： H01L25/072 , H01L25/18 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor power module includes a filter element made of a magnetic material that can be exchanged as required, while providing a package having a compact size. The power module can be used for a power conversion device for providing power conversion of DC power or AC power by switching a power semiconductor element, such as an IGBT. The filter element can be an annular magnetic member that rests around one or more terminals connected to the power semiconductor element. Noise current flowing through the terminals, when the power semiconductor element is switched, can be suppressed effectively with the annular magnetic member.
摘要翻译：半导体功率模块包括由可以根据需要更换的磁性材料制成的过滤元件，同时提供具有紧凑尺寸的封装。功率模块可以用于通过切换诸如IGBT的功率半导体元件来提供直流电力或交流电力的电力转换的电力转换装置。过滤元件可以是围绕连接到功率半导体元件的一个或多个端子的环形磁性构件。当功率半导体元件被切换时，流过端子的噪声电流可以通过环形磁性元件被有效地抑制。

3. 发明授权

US07719092B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US07719092B2
公开(公告)日：2010-05-18
申请号：US11424434
申请日：2006-06-15
申请人： Hiromu Takubo
发明人： Hiromu Takubo
IPC分类号： H01L23/06
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/165 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01078 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The power semiconductor module includes a module package housing power semiconductor devices therein and a magnetic core set around the module package, such that magnetic core surrounds the power semiconductor devices such as IGBTs. Alternatively, the magnetic core is built in the module package such that the outer circumference faces of magnetic core and the side faces of module package form side faces of the power semiconductor module. The power semiconductor module according to the invention facilitates replacing the magnetic core, setting the magnetic core around the module package thereof, reducing the size thereof, simplifying the structure thereof, and easy manufacture thereof.
摘要翻译：功率半导体模块包括其中容纳功率半导体器件的模块封装和围绕模块封装的磁芯，使得磁芯围绕诸如IGBT的功率半导体器件。或者，将磁芯内置在模块封装中，使得磁芯的外周面和模块封装的侧面形成功率半导体模块的侧面。根据本发明的功率半导体模块有助于更换磁芯，将磁芯围绕其模块封装设置，减小其尺寸，简化其结构，并且易于制造。

4. 发明授权

US5077651A Snubber circuit of power converter 失效
标题翻译：电源转换器的SNUBBER电路
公开(公告)号：US5077651A
公开(公告)日：1991-12-31
申请号：US585723
申请日：1990-09-19
申请人： Shinichi Kobayashi , Masakazu Yoshida , Hiromu Takubo
发明人： Shinichi Kobayashi , Masakazu Yoshida , Hiromu Takubo
IPC分类号： H02H7/12 , H02H7/122 , H02H9/04 , H02M7/537 , H03K17/0814 , H03K17/16
CPC分类号： H02M1/34 , H02M7/538 , H03K17/08146 , H02M2001/346 , Y02B70/1491
摘要： A power converter section in which two serially connected snubber circuits, each formed by an asymmetrical element, such as a Zenner diode and a capacitor in series, and an auxiliary snubber circuit including a third capacitor coupled across parts of the first two snubber circuits, is disclosed. The described power converter section reduces the number of components and cost necessary for increasing surge voltage suppression.

5. 发明授权

US5055990A Snubber circuit for power conversion semiconductor elements and assembly thereof 失效
标题翻译：用于功率转换半导体元件的SNUBER电路及其组件
公开(公告)号：US5055990A
公开(公告)日：1991-10-08
申请号：US466515
申请日：1990-01-17
申请人： Hiroshi Miki , Yoshitaka Fujiwara , Kiyoshi Iida , Hiromu Takubo , Kunio Shibayama , Shinichi Kobayashi
发明人： Hiroshi Miki , Yoshitaka Fujiwara , Kiyoshi Iida , Hiromu Takubo , Kunio Shibayama , Shinichi Kobayashi
IPC分类号： H01L25/07 , H01L25/18 , H02M1/00 , H02M7/00 , H03K17/0814 , H03K17/16
CPC分类号： H02M1/34 , H01L24/36 , H01L24/40 , H01L25/165 , H02M7/003 , H02M7/5387 , H03K17/08146 , H01L2224/40137 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2924/12035 , H01L2924/13034 , H01L2924/1305 , H02M2001/346 , Y02B70/1491
摘要： A snubber network of high energy efficiency for use with power conversion semiconductors is described. Asymmetrical semiconductor elements are used to reduce and dissipate voltage spikes induced by stray inductance during turn-off of power semiconductors. A space efficient assembly using the described snubber network containing asymmetrical semiconductor elements and an external snubber capacitor is also described.

6. 发明申请

US20050156251A1 Semiconductor power module 有权
标题翻译：半导体电源模块
公开(公告)号：US20050156251A1
公开(公告)日：2005-07-21
申请号：US11017187
申请日：2004-12-20
申请人： Hiromu Takubo
发明人： Hiromu Takubo
IPC分类号： H01F17/06 , H01L25/00 , H01L25/07 , H01L25/18 , H01L29/76 , H03H1/00
CPC分类号： H01L25/072 , H01L25/18 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor power module includes a filter element made of a magnetic material that can be exchanged as required, while providing a package having a compact size. The power module can be used for a power conversion device for providing power conversion of DC power or AC power by switching a power semiconductor element, such as an IGBT. The filter element can be an annular magnetic member that rests around one or more terminals connected to the power semiconductor element. Noise current flowing through the terminals, when the power semiconductor element is switched, can be suppressed effectively with the annular magnetic member.
摘要翻译：半导体功率模块包括由可以根据需要更换的磁性材料制成的过滤元件，同时提供具有紧凑尺寸的封装。功率模块可以用于通过切换诸如IGBT的功率半导体元件来提供直流电力或交流电力的电力转换的电力转换装置。过滤元件可以是围绕连接到功率半导体元件的一个或多个端子的环形磁性构件。当功率半导体元件被切换时，流过端子的噪声电流可以通过环形磁性元件被有效地抑制。

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