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    • 1. 发明授权
    • Gate driving circuit and method for driving semiconductor device
    • 栅极驱动电路及其驱动方法
    • US09543928B2
    • 2017-01-10
    • US12189319
    • 2008-08-11
    • Keisuke YamashiroHiromu Takubo
    • Keisuke YamashiroHiromu Takubo
    • H03K3/012H03K17/16
    • H03K3/012H03K17/168
    • A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET.
    • 栅极驱动电路和方法可以改善噪声与半导体器件的关断开关导致的损耗之间的权衡关系。 栅极驱动电路包括第一和第二串联电路。 第一串联电路包括串联连接的第一和第二MOSFET。 半导体器件的栅极端子连接到第一MOSFET的负电位侧和第二MOSFET的正电位侧。 半导体器件的发射极连接到第二MOSFET的负电位侧或直流电源。 第二串联电路包括串联连接的电容器和第三MOSFET。 第二串联电路与第二MOSFET并联连接。 通过接通第二和第三MOSFET并关闭第一个MOSFET来使半导体器件关断。