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    • 2. 发明申请
    • SEMICONDUCTOR DEVICE AND CIRCUIT FOR CONTROLLING POTENTIAL OF GATE OF INSULATED GATE TYPE SWITCHING DEVICE
    • 用于控制绝缘栅型开关装置的栅极电位的半导体装置和电路
    • US20140070869A1
    • 2014-03-13
    • US14110831
    • 2012-02-14
    • Keisuke HataTsuneo Maebara
    • Keisuke HataTsuneo Maebara
    • H03K17/0412
    • H03K17/04123H02M1/08
    • A semiconductor device outputs a signal to control a gate potential a switching device. The semiconductor device includes a first signal output terminal, and is capable of receiving or internally creating a reference signal, which varies between a first potential and a second potential. The semiconductor device can switch between first and second operations. The first operation outputs to the first signal output terminal a signal that is at a third potential when the reference signal is at the first potential, and that is at a fourth potential higher than the third potential when the reference signal is at the second potential. The second operation outputs to the first signal output terminal a signal that is at the fourth potential when the reference signal is at the first potential, and that is at the third potential when the reference signal is at the second potential.
    • 半导体器件输出用于控制开关器件的栅极电位的信号。 该半导体器件包括第一信号输出端,并且能够接收或内部产生在第一电位和第二电位之间变化的参考信号。 半导体器件可以在第一和第二操作之间切换。 当参考信号处于第一电位时,第一操作向第一信号输出端输出处于第三电位的信号,并且当参考信号处于第二电位时,该信号处于比第三电位高的第四电位。 当参考信号处于第一电位时,第二操作向第一信号输出端输出处于第四电位的信号,并且当参考信号处于第二电位时,该信号处于第三电位。
    • 3. 发明授权
    • Semiconductor device and circuit for controlling potential of gate of insulated gate type switching device
    • 用于控制绝缘栅型开关器件栅极电位的半导体器件和电路
    • US08994437B2
    • 2015-03-31
    • US14110831
    • 2012-02-14
    • Keisuke HataTsuneo Maebara
    • Keisuke HataTsuneo Maebara
    • H03K17/04H02M1/08H03K17/0412
    • H03K17/04123H02M1/08
    • A semiconductor device outputs a signal to control a gate potential a switching device. The semiconductor device includes a first signal output terminal, and is capable of receiving or internally creating a reference signal, which varies between a first potential and a second potential. The semiconductor device can switch between first and second operations. The first operation outputs to the first signal output terminal a signal that is at a third potential when the reference signal is at the first potential, and that is at a fourth potential higher than the third potential when the reference signal is at the second potential. The second operation outputs to the first signal output terminal a signal that is at the fourth potential when the reference signal is at the first potential, and that is at the third potential when the reference signal is at the second potential.
    • 半导体器件输出用于控制开关器件的栅极电位的信号。 该半导体器件包括第一信号输出端,并且能够接收或内部产生在第一电位和第二电位之间变化的参考信号。 半导体器件可以在第一和第二操作之间切换。 当参考信号处于第一电位时,第一操作向第一信号输出端输出处于第三电位的信号,并且当参考信号处于第二电位时,该信号处于比第三电位高的第四电位。 当参考信号处于第一电位时,第二操作向第一信号输出端输出处于第四电位的信号,并且当参考信号处于第二电位时,该信号处于第三电位。