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1. 发明授权

US5001335A Semiconductor photodetector device and method of manufacturing the same 失效
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US5001335A
公开(公告)日：1991-03-19
申请号：US460005
申请日：1989-12-29
申请人： Keiji Takaoka , Tetsuo Sadamasa , Motoyasu Morinaga , Nobuo Suzuki , Kenji Matsumoto
发明人： Keiji Takaoka , Tetsuo Sadamasa , Motoyasu Morinaga , Nobuo Suzuki , Kenji Matsumoto
IPC分类号： H01L31/0304 , H01L31/107
CPC分类号： H01L31/03042 , H01L31/1075 , Y02E10/544 , Y02P70/521
摘要： Disclosed are an avalanche photodiode and a manufacturing method thereof. An n.sup.- -type InGaAs light absorption layer and n.sup.- -type InP window layer are formed on an n-type InP substrate by crystal growth, in the order mentioned. A depression is formed in a selected surface portion of the window layer, and n-type impurities are doped into the bottom of the depression, to thereby form an n-type high concentration region. Further, n.sup.- -type crystal-grown InP layer is formed in the depression in such a way as to fill the depression. A guard ring is formed around the depression by the doping of p-type impurities. By doping p-type impurities into the window layer, a p-type high concentration region is formed in the window layer in a manner completely surrounding the interface between the n-type high concentration region and the crystal-grown InP layer. The n-type and p-type high concentration regions define a junction serving as a light-receiving region. Since the interface of the crystal-grown InP layer, which may not have a satisfactory crystalline structure, is located within the p-type high concentration regions, that interface is not supplied with a high electric field during use. Accordingly, the performance of the avalanche photodiode is not influenced by the interface.

2. 发明授权

US08955851B2 Metalannular gasket 有权
标题翻译：金属衬垫
公开(公告)号：US08955851B2
公开(公告)日：2015-02-17
申请号：US12312668
申请日：2007-11-05
申请人： Kenji Matsumoto , Kazuhiro Takahashi
发明人： Kenji Matsumoto , Kazuhiro Takahashi
IPC分类号： F16J15/10 , F16B43/00 , F16B41/00
CPC分类号： F16B43/001 , F16B41/002 , F16J15/104 , Y10S277/937
摘要： A metal annular gasket comprising an annular metal base plate; a compound layer integrally laminated on both surfaces of the annular metal base plate, the compound layer being made of synthetic resin or a rubber material mixed with a fiber material; and an annular seal layer having a circumferential covering portion which covers the inner circumferential edge of the annular metal plate and the inner circumferential edge of both compound layers, the compound layer being made of synthetic resin or a rubber material. The annular seal layer is formed such that the surface of the annular seal layer is so connected to the surfaces of the compound layer as to provide smooth transition in its thickness direction.
摘要翻译：一种金属环形垫片，包括环形金属基板; 在环状金属基板的两面一体层叠的复合层，由合成树脂制成的复合层或与纤维材料混合的橡胶材料; 以及环状密封层，其具有覆盖环状金属板的内周缘和两个复合层的内周边缘的周向覆盖部分，复合层由合成树脂或橡胶材料制成。环形密封层形成为使得环形密封层的表面与化合物层的表面连接，以在其厚度方向上提供平滑的过渡。

3. 发明授权

US08859421B2 Manganese oxide film forming method, semiconductor device manufacturing method and semiconductor device 有权
标题翻译：氧化锰形成方法，半导体器件制造方法和半导体器件
公开(公告)号：US08859421B2
公开(公告)日：2014-10-14
申请号：US13267227
申请日：2011-10-06
申请人： Koji Neishi , Junichi Koike , Kenji Matsumoto
发明人： Koji Neishi , Junichi Koike , Kenji Matsumoto
IPC分类号： H01L21/44 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/532 , H01L21/768 , C23C16/40
CPC分类号： H01L23/53238 , C23C16/40 , C23C16/401 , C23C16/406 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76867 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.
摘要翻译：提供了能够形成对Cu具有高粘合性的氧化锰膜的氧化锰膜形成方法。在氧化锰膜形成方法中，通过向氧化物供给含锰气体，在氧化物上形成氧化锰膜。用于形成氧化锰膜的成膜温度设定为等于或高于约100℃且低于约400℃

4. 发明申请

US20140204592A1 LENS MEMBER AND LIGHT-EMITTING DEVICE USING SAME 有权
标题翻译：使用相同的镜头部件和发光装置
公开(公告)号：US20140204592A1
公开(公告)日：2014-07-24
申请号：US14237983
申请日：2012-08-13
申请人： Junji Miyashita , Yasuaki Kayanuma , Kenji Matsumoto
发明人： Junji Miyashita , Yasuaki Kayanuma , Kenji Matsumoto
IPC分类号： F21V5/04
CPC分类号： F21V5/045 , F21K9/20 , F21K9/69 , F21S41/141 , F21S41/143 , F21S41/275 , F21S43/14 , F21S43/26 , F21S43/315 , F21V5/002 , F21V5/04 , F21V7/0091 , F21Y2115/10 , F24S23/31 , G02B3/08 , G02B5/1866 , G02B5/188 , G02B19/0028 , G02B19/0061
摘要： A lens member includes a light-incident side; a light-exit side that is opposite to the light-incident side, a Fresnel lens arranged on a center axis that passes through a center of the light-incident side, and a diffraction grating structure arranged around a periphery of the Fresnel lens and having a center through which the center axis passes. Also, it is disclosed that the Fresnel lens may include a first Fresnel lens and a second Fresnel lens, the first Fresnel lens includes annular prisms that are divided from a convex lens and having a center through which the center axis of the light-incident side passes, and the second Fresnel lens includes annular prisms that are divided from a TIR lens and arranged around the periphery of the first Fresnel lens, centering around the center axis of the light-incident side.
摘要翻译：透镜构件包括光入射侧; 与光入射侧相反的光出射侧，配置在通过光入射侧的中心的中心轴上的菲涅耳透镜，以及绕着菲涅耳透镜的周围配置的衍射光栅结构，具有中心轴通过的中心。此外，公开了菲涅耳透镜可以包括第一菲涅尔透镜和第二菲涅尔透镜，第一菲涅耳透镜包括从凸透镜分离并具有中心的环形棱镜，光入射侧的中心轴穿过该中心并且第二菲涅尔透镜包括从TIR透镜分割并围绕第一菲涅耳透镜的周围以围绕光入射侧的中心轴线为中心布置的环形棱镜。

5. 发明申请

US20130136859A1 FILM FORMING METHOD AND PROCESSING SYSTEM 有权
标题翻译：电影制作方法与处理系统
公开(公告)号：US20130136859A1
公开(公告)日：2013-05-30
申请号：US13807079
申请日：2011-06-24
申请人： Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
发明人： Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
IPC分类号： B05D5/12
CPC分类号： B05D5/12 , C23C16/40 , H01L21/76831 , H01L21/76846 , H01L21/76856 , H01L21/76861 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.
摘要翻译：成膜方法对其表面上具有绝缘层的目标物体进行成膜处理。该成膜方法包括：形成含有第一金属的第一薄膜的第一薄膜形成步骤，通过氧化第一薄膜形成氧化膜的氧化步骤和形成第二薄膜的第二薄膜形成步骤在氧化膜上含有第二金属。

6. 发明授权

US08349725B2 Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and storage medium 有权
标题翻译：制造半导体器件，半导体制造装置和存储介质的方法
公开(公告)号：US08349725B2
公开(公告)日：2013-01-08
申请号：US12920701
申请日：2009-02-20
申请人： Hiroshi Sato , Hitoshi Itoh , Kenji Matsumoto
发明人： Hiroshi Sato , Hitoshi Itoh , Kenji Matsumoto
IPC分类号： H01L21/4763
CPC分类号： H01L21/67207 , H01L21/02063 , H01L21/02068 , H01L21/67253 , H01L21/67742 , H01L21/76814 , H01L21/76831 , H01L21/76834 , H01L21/76843 , H01L21/76858 , H01L21/76861 , H01L21/76865 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess.
摘要翻译：本发明是一种制造半导体器件的方法，包括：在形成在衬底表面上的层间绝缘膜中形成凹部，所述凹部被构造成嵌入有主要由铜制成的上部导电沟道，以与下部电连接导电通道; 提供含锰有机化合物的气体，形成由锰化合物制成的阻挡层，以防止铜向层间绝缘膜扩散，使得阻挡层覆盖层间绝缘膜的暴露表面; 在形成阻挡层之后，向阻挡层供给有机酸，以增加形成阻挡层的锰化合物中的锰的比例; 在供给有机酸之后，在阻挡层的表面上形成主要由铜制成的种子层; 在形成种子层之后，加热衬底以将锰从阻挡层的表面或阻挡层中分离出到种子层的表面上; 向种子层供应清洗液，以便通过加热去除种子层表面上分离的锰; 并且在供应清洁液之后，在凹槽中形成主要由铜制成的上导电通道。

7. 发明申请

US20120251721A1 DEVICE AND METHOD FOR FORMING FILM 失效
标题翻译：用于形成膜的装置和方法
公开(公告)号：US20120251721A1
公开(公告)日：2012-10-04
申请号：US13386307
申请日：2010-07-21
申请人： Kenji Matsumoto , Hidenori Miyoshi
发明人： Kenji Matsumoto , Hidenori Miyoshi
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： H01L21/0262 , C23C16/40 , C23C16/406 , C23C16/4404 , C23C16/45525 , H01L21/28556 , H01L21/68742 , H01L21/68785 , H01L21/76843 , H01L21/76855
摘要： The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.
摘要翻译：本发明涉及一种成膜设备，用于通过在被配置为排出空气的处理室内使用有机金属原料气体在待处理物体的表面上形成薄膜，其中疏水层安装在暴露于处理室内的大气的构件。

8. 发明申请

US20120219724A1 METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：形成金属氧化物膜的方法，形成锰氧化物膜的方法和计算机可读存储介质
公开(公告)号：US20120219724A1
公开(公告)日：2012-08-30
申请号：US13497929
申请日：2010-09-17
申请人： Koji Neishi , Junichi Koike , Kenji Matsumoto
发明人： Koji Neishi , Junichi Koike , Kenji Matsumoto
IPC分类号： C23C16/18 , C23C16/52 , C23C16/50
CPC分类号： C23C16/40 , H01L21/28556 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film.
摘要翻译：在形成金属氧化物膜的方法中，通过可以提供膜和Cu之间的优异的粘附性，将含有有机金属化合物的气体供应到基底，并且在基底上形成金属氧化物膜。在通过向基体供给有机金属化合物而在基材上形成金属氧化物膜之后，在形成金属氧化物膜的工序的最后步骤中，将金属氧化物膜暴露于含氧气体或含氧等离子体。

9. 发明申请

US20120135612A1 FILM FORMING METHOD, PRETREATMENT DEVICE, AND PROCESSING SYSTEM 有权
标题翻译：电影形成方法，预处理装置和处理系统
公开(公告)号：US20120135612A1
公开(公告)日：2012-05-31
申请号：US13378535
申请日：2010-06-16
申请人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
发明人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
IPC分类号： H01L21/31 , C23C16/44 , C23C16/02
CPC分类号： H01L21/76814 , C23C16/02 , C23C16/40 , H01L21/28556 , H01L21/3105 , H01L21/32051 , H01L21/76831 , H01L21/76844 , H01L21/76867
摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.
摘要翻译：公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜在亲水化绝缘层的表面上使用含锰材料气体的方法。因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

10. 发明授权

US08124492B2 Semiconductor device manufacturing method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US08124492B2
公开(公告)日：2012-02-28
申请号：US12720831
申请日：2010-03-10
申请人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato
发明人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato
IPC分类号： H01L21/20
CPC分类号： H01L21/31604 , H01L21/3145 , H01L28/40
摘要： Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide film or an oxynitride film on a conductor for serving as one electrode of a capacitor; forming, on the oxide film or the oxynitride film, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.
摘要翻译：提供一种具有可形成为薄膜的电介质膜的电容器的半导体器件制造方法，可以在低温下形成，并具有容易控制的特性。制造方法包括：在用作电容器的一个电极的导体上形成氧化膜或氮氧化物膜; 在氧化膜或氮氧化物膜上形成用作电容器的电介质膜的氧化锰膜; 在氧化锰膜上形成用作电容器的另一个电极的导电膜。

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