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1. 发明申请

US20060081996A1 Semiconductor device having aluminum electrode and metallic electrode 审中-公开
标题翻译：具有铝电极和金属电极的半导体器件
公开(公告)号：US20060081996A1
公开(公告)日：2006-04-20
申请号：US11248262
申请日：2005-10-13
申请人： Keiji Shinyama , Ichiharu Kondo , Kimiharu Kayukawa , Shoji Miura
发明人： Keiji Shinyama , Ichiharu Kondo , Kimiharu Kayukawa , Shoji Miura
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L23/051 , H01L23/24 , H01L24/03 , H01L24/32 , H01L24/33 , H01L24/48 , H01L2224/04042 , H01L2224/05557 , H01L2224/05558 , H01L2224/05624 , H01L2224/29111 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48624 , H01L2224/48724 , H01L2224/73265 , H01L2224/83194 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01026 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a semiconductor substrate; an aluminum electrode disposed on the surface of the substrate; a protection film disposed on the aluminum electrode and having an opening; and a metallic electrode disposed on a surface of the aluminum electrode through the opening of the protection film. The surface of the aluminum electrode includes a concavity. The concavity has an opening side and a bottom side, which is wider than the opening side. In the device, a concavity and a convexity of the metallic electrode become small.
摘要翻译：半导体器件包括：半导体衬底; 设置在所述基板的表面上的铝电极; 保护膜，设置在铝电极上并具有开口; 以及通过保护膜的开口设置在铝电极的表面上的金属电极。铝电极的表面包括凹面。该凹部具有比开口侧宽的开口侧和底侧。在该装置中，金属电极的凹凸变小。

2. 发明授权

US07361996B2 Semiconductor device having tin-based solder layer and method for manufacturing the same 有权
标题翻译：具有锡基焊料层的半导体装置及其制造方法
公开(公告)号：US07361996B2
公开(公告)日：2008-04-22
申请号：US11220979
申请日：2005-09-08
申请人： Kimiharu Kayukawa , Akira Tanahashi , Chikage Noritake , Shoji Miura
发明人： Kimiharu Kayukawa , Akira Tanahashi , Chikage Noritake , Shoji Miura
IPC分类号： H01L23/52 , H01L23/40 , H01L23/48
CPC分类号： H01L24/29 , H01L23/4827 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/32245 , H01L2224/83193 , H01L2224/83801 , H01L2224/8482 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/157 , H01L2924/00 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01026 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.
摘要翻译：半导体器件包括：半导体衬底; 基地会员锡基焊料层; 第一金属层; 和第一合金层。半导体基板通过第一金属层，第一合金层和锡基焊料层依次结合到基底构件。第一合金层由第一金属层中的第一金属和锡基焊料层中的锡制成。第一金属层由选自钛，铝，铁，钼，铬，钒和铁 - 镍 - 铬合金中的至少一种材料制成。

3. 发明授权

US07579212B2 Semiconductor device having tin-based solder layer and method for manufacturing the same 有权
标题翻译：具有锡基焊料层的半导体装置及其制造方法
公开(公告)号：US07579212B2
公开(公告)日：2009-08-25
申请号：US11707961
申请日：2007-02-20
申请人： Kimiharu Kayukawa , Akira Tanahashi , Chikage Noritake , Shoji Miura
发明人： Kimiharu Kayukawa , Akira Tanahashi , Chikage Noritake , Shoji Miura
IPC分类号： H01L21/00
CPC分类号： H01L24/29 , H01L23/4827 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/32245 , H01L2224/83193 , H01L2224/83801 , H01L2224/8482 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/157 , H01L2924/00 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01026 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.
摘要翻译：半导体器件包括：半导体衬底; 基地会员锡基焊料层; 第一金属层; 和第一合金层。半导体基板通过第一金属层，第一合金层和锡基焊料层依次结合到基底构件。第一合金层由第一金属层中的第一金属和锡基焊料层中的锡制成。第一金属层由选自钛，铝，铁，钼，铬，钒和铁 - 镍 - 铬合金中的至少一种材料制成。

4. 发明申请

US20070176293A1 Semiconductor device having tin-based solder layer and method for manufacturing the same 有权
标题翻译：具有锡基焊料层的半导体装置及其制造方法
公开(公告)号：US20070176293A1
公开(公告)日：2007-08-02
申请号：US11707961
申请日：2007-02-20
申请人： Kimiharu Kayukawa , Akira Tanahashi , Chikage Noritake , Shoji Miura
发明人： Kimiharu Kayukawa , Akira Tanahashi , Chikage Noritake , Shoji Miura
IPC分类号： H01L23/48
CPC分类号： H01L24/29 , H01L23/4827 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/32245 , H01L2224/83193 , H01L2224/83801 , H01L2224/8482 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/157 , H01L2924/00 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01026 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.
摘要翻译：半导体器件包括：半导体衬底; 基地会员锡基焊料层; 第一金属层; 和第一合金层。半导体基板通过第一金属层，第一合金层和锡基焊料层依次结合到基底构件。第一合金层由第一金属层中的第一金属和锡基焊料层中的锡制成。第一金属层由选自钛，铝，铁，钼，铬，钒和铁 - 镍 - 铬合金中的至少一种材料制成。

5. 发明申请

US20060049521A1 Semiconductor device having tin-based solder layer and method for manufacturing the same 有权
公开(公告)号：US20060049521A1
公开(公告)日：2006-03-09
申请号：US11220979
申请日：2005-09-08
申请人： Kimiharu Kayukawa , Akira Tanahashi , Chikage Noritake , Shoji Miura
发明人： Kimiharu Kayukawa , Akira Tanahashi , Chikage Noritake , Shoji Miura
IPC分类号： H01L23/48
CPC分类号： H01L24/29 , H01L23/4827 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/32245 , H01L2224/83193 , H01L2224/83801 , H01L2224/8482 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/157 , H01L2924/00 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01026 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

6. 发明授权

US09009948B2 Method of manufacturing stator coil for electric rotating machine 有权
标题翻译：制造旋转电机定子线圈的方法
公开(公告)号：US09009948B2
公开(公告)日：2015-04-21
申请号：US13548261
申请日：2012-07-13
申请人： Kimiharu Kayukawa , Masaomi Dobashi , Hideji Shimaoka , Youichi Kamakura
发明人： Kimiharu Kayukawa , Masaomi Dobashi , Hideji Shimaoka , Youichi Kamakura
IPC分类号： H02K3/28 , H02K15/04
CPC分类号： H02K3/28 , H02K15/0478 , Y10T29/49009
摘要： A method of manufacturing a stator coil includes the steps of: (1) forming substantially planar electric wires each including in-slot portions to be received in slots of a stator core and turn portions to be located outside of the slots to connect the in-slot portions; (2) rolling each of the planar electric wires into a spiral shape by plastically deforming the turn portions; and (3) assembling the rolled electric wires through relative axial movements therebetween, each of the relative axial movements being made by axially moving first and second components relative to each other with both the first and second components radially elastically deformed and with each of the first and second components circumferentially positioned by at least one positioning member, each of the first and second components being one of the rolled electric wires or an electric wire sub-assembly comprised of a plurality of the rolled electric wires.
摘要翻译：一种制造定子线圈的方法包括以下步骤：（1）形成基本上平面的电线，每个电线包括待接收在定子芯的槽中的槽内部分，并且转动部分位于槽的外侧，槽部分; （2）通过使转弯部分塑性变形，将每个平面电线卷成螺旋状; 并且（3）通过其间的相对轴向运动组装轧制的电线，每个相对轴向运动通过使第一和第二部件相对于彼此轴向移动，第一和第二部件都径向弹性变形，并且每个第一以及由至少一个定位构件周向定位的第二构件，所述第一和第二构件中的每一个是所述卷绕的电线中的一个或由多个所述卷绕的电线组成的电线子组件。

7. 发明授权

US08156804B2 Capacitive semiconductor sensor 失效
标题翻译：电容半导体传感器
公开(公告)号：US08156804B2
公开(公告)日：2012-04-17
申请号：US11882135
申请日：2007-07-31
申请人： Minekazu Sakai , Michihiro Masuda , Kimiharu Kayukawa
发明人： Minekazu Sakai , Michihiro Masuda , Kimiharu Kayukawa
IPC分类号： G01P1/02 , G01P15/125 , H01L29/00
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/0023 , G01P1/023 , G01P15/0802 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/16225 , H01L2924/00014 , H01L2924/16195 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A capacitive semiconductor sensor includes a sensor chip, a circuit chip, a plurality of bumps, and a plurality of dummy bumps. The sensor chip includes a dynamic quantity detector, which has a detection axis in one direction. The circuit chip includes a signal processing circuit. The sensor chip and the circuit chip are coupled by flip-chip bonding through the plurality of bumps. Furthermore, the sensor chip and the circuit chip are mechanically coupled through the plurality of dummy bumps.
摘要翻译：电容半导体传感器包括传感器芯片，电路芯片，多个凸块和多个虚拟凸块。传感器芯片包括具有一个方向的检测轴的动态量检测器。电路芯片包括信号处理电路。传感器芯片和电路芯片通过多个凸块的倒装芯片接合来耦合。此外，传感器芯片和电路芯片通过多个虚拟凸块机械耦合。

8. 发明申请

US20110042812A1 Electronic device and method of manufacturing the same 审中-公开
标题翻译：电子设备及其制造方法
公开(公告)号：US20110042812A1
公开(公告)日：2011-02-24
申请号：US12805396
申请日：2010-07-29
申请人： Kimiharu Kayukawa , Rikiya Kamimura , Masaya Mizutani
发明人： Kimiharu Kayukawa , Rikiya Kamimura , Masaya Mizutani
IPC分类号： H01L23/48 , H01L21/50
CPC分类号： H01L25/16 , H01L21/56 , H01L23/3107 , H01L23/49513 , H01L23/4952 , H01L23/49537 , H01L23/49568 , H01L23/49575 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/64 , H01L24/66 , H01L24/69 , H01L24/73 , H01L25/072 , H01L2224/04026 , H01L2224/05624 , H01L2224/32225 , H01L2224/45014 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48699 , H01L2224/49 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0781 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00012 , H01L2924/00 , H01L2224/85399 , H01L2924/206
摘要： An electronic device includes a power element on a first substrate and an electronic component on a second substrate. The first and second substrates are stacked so that the power element and the electronic component can be located between the first and second substrates. A first end of a first wire is connected to the power element. A second end of the first wire is connected to the first substrate. A middle portion of the first wire projects toward the second substrate. A first end of a second wire is connected to the power element. A second end of the wire extends above a top of the middle portion of the first conductive member and is connected to the second substrate.
摘要翻译：电子设备包括第一基板上的功率元件和第二基板上的电子元件。堆叠第一和第二基板，使得功率元件和电子部件可以位于第一和第二基板之间。第一线的第一端连接到功率元件。第一线的第二端连接到第一衬底。第一线的中间部分向第二衬底突出。第二导线的第一端连接到功率元件。线的第二端在第一导电构件的中间部分的顶部的上方延伸并连接到第二衬底。

9. 发明申请

US20080093740A1 Capacitive semiconductor sensor 失效
标题翻译：电容半导体传感器
公开(公告)号：US20080093740A1
公开(公告)日：2008-04-24
申请号：US11882135
申请日：2007-07-31
申请人： Minekazu Sakai , Michihiro Masuda , Kimiharu Kayukawa
发明人： Minekazu Sakai , Michihiro Masuda , Kimiharu Kayukawa
IPC分类号： H01L27/148
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/0023 , G01P1/023 , G01P15/0802 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/16225 , H01L2924/00014 , H01L2924/16195 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A capacitive semiconductor sensor includes a sensor chip, a circuit chip, a plurality of bumps, and a plurality of dummy bumps. The sensor chip includes a dynamic quantity detector, which has a detection axis in one direction. The circuit chip includes a signal processing circuit. The sensor chip and the circuit chip are coupled by flip-chip bonding through the plurality of bumps. Furthermore, the sensor chip and the circuit chip are mechanically coupled through the plurality of dummy bumps.
摘要翻译：电容半导体传感器包括传感器芯片，电路芯片，多个凸块和多个虚拟凸块。传感器芯片包括具有一个方向的检测轴的动态量检测器。电路芯片包括信号处理电路。传感器芯片和电路芯片通过多个凸块的倒装芯片接合来耦合。此外，传感器芯片和电路芯片通过多个虚拟凸块机械耦合。

10. 发明授权

US07659127B2 Manufacturing device of semiconductor package and manufacturing method of semiconductor package 失效
标题翻译：半导体封装制造装置及半导体封装的制造方法
公开(公告)号：US07659127B2
公开(公告)日：2010-02-09
申请号：US11882136
申请日：2007-07-31
申请人： Kimiharu Kayukawa , Michihiro Masuda , Takashige Saitoh
发明人： Kimiharu Kayukawa , Michihiro Masuda , Takashige Saitoh
IPC分类号： H01L21/00
CPC分类号： H01L24/81 , H01L22/20 , H01L23/544 , H01L24/75 , H01L2223/54473 , H01L2224/13144 , H01L2224/16 , H01L2224/75 , H01L2224/75301 , H01L2224/81121 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/83908 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/00014
摘要： A manufacturing device of a semiconductor package includes: a holding element for holding a substrate; a bonding element for holding the package and bonding a first metal bump of the package to a second metal bump of the substrate; a monitoring element for irradiating an infrared light toward the substrate and monitoring an electrode pad under the second metal bump based on a reflected light reflected on the pad; and a determination element for determining a state of a bonding surface between the first and second metal bumps based on monitoring information of the pad. The monitoring element faces the bonding element through the holding element, the substrate and the package.
摘要翻译：半导体封装的制造装置包括：用于保持基板的保持元件; 用于保持封装并将封装的第一金属凸块接合到衬底的第二金属凸块的接合元件; 监测元件，用于向基板照射红外光，并且基于在所述焊盘上反射的反射光来监测所述第二金属凸块下方的电极焊盘; 以及确定元件，用于基于所述焊盘的监视信息来确定所述第一和第二金属凸块之间的接合表面的状态。监测元件通过保持元件，基板和封装件面向结合元件。

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