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1. 发明申请

US20120073979A1 Plating apparatus and plating method 有权
标题翻译：电镀装置及电镀方法
公开(公告)号：US20120073979A1
公开(公告)日：2012-03-29
申请号：US13136826
申请日：2011-08-11
申请人： Keiji Shinyama , Tomoya Uchida
发明人： Keiji Shinyama , Tomoya Uchida
IPC分类号： C25D17/00 , C25D5/34
CPC分类号： C25D17/00 , C25D5/003 , C25D21/14 , C25D21/18
摘要： [Problem] To provide a plating method and apparatus which do not require preparation of a separate treatment tank for each treatment step and therefore enable the facility to be reduced in size and, further, which can reduce the amounts of use of the treatment solutions.[Solution] A plating apparatus feeding a plating solution to a treatment tank in which an electrode is arranged and plating a workpiece made of a metal so as to perform plating, the plating apparatus characterized by being provided with a plurality of pipes which are connected to an outer wall of the treatment tank and a switch valve which is provided able to rotate at an inner side of the outer wall and which has at least one feed port for making at least one treatment solution feed pipe selected from the plurality of treatment solution feed pipes communicate with the treatment tank.
摘要翻译： [问题]提供一种电镀方法和装置，其不需要为每个处理步骤制备单独的处理槽，因此能够减小设备的尺寸，并且还可以减少处理溶液的使用量。 [解决方案]一种电镀设备，其将电镀液供给到其中布置有电极的处理槽，并且对由金属制成的工件进行电镀以进行电镀，所述电镀设备的特征在于设有多个管，处理罐的外壁和切换阀，其设置成能够在外壁的内侧旋转，并且具有至少一个进料口用于制造从多个处理液进料中选择的至少一种处理溶液进料管管道与处理槽通信。

2. 发明授权

US07030496B2 Semiconductor device having aluminum and metal electrodes and method for manufacturing the same 有权
标题翻译：具有铝和金属电极的半导体器件及其制造方法
公开(公告)号：US07030496B2
公开(公告)日：2006-04-18
申请号：US10878435
申请日：2004-06-29
申请人： Keiji Shinyama , Shoji Miura , Ichiharu Kondo
发明人： Keiji Shinyama , Shoji Miura , Ichiharu Kondo
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/33 , H01L23/4334 , H01L23/492 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/0401 , H01L2224/04042 , H01L2224/05124 , H01L2224/05155 , H01L2224/05556 , H01L2224/05644 , H01L2224/29111 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73207 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.
摘要翻译：半导体器件包括半导体衬底; 设置在所述基板上的铝电极; 设置在铝电极上的保护膜; 设置在所述保护膜上以露出所述铝电极的开口; 以及通过所述开口设置在所述铝电极的表面上的金属电极。铝电极包括设置在开口下方的凹部。设置在凹部处的铝电极的厚度等于或大于凹部的深度。铝电极的表面包括多个凹部和多个凸部。

3. 发明授权

US08932440B2 Plating apparatus and plating method 有权
标题翻译：电镀装置及电镀方法
公开(公告)号：US08932440B2
公开(公告)日：2015-01-13
申请号：US13136826
申请日：2011-08-11
申请人： Keiji Shinyama , Tomoya Uchida
发明人： Keiji Shinyama , Tomoya Uchida
IPC分类号： B23H11/00 , C25B9/00 , C25C7/00 , C25D17/00 , C25F7/00 , C25D21/14 , C25D21/18 , C25D5/00
CPC分类号： C25D17/00 , C25D5/003 , C25D21/14 , C25D21/18
摘要： [Problem] To provide a plating method and apparatus which do not require preparation of a separate treatment tank for each treatment step and therefore enable the facility to be reduced in size and, further, which can reduce the amounts of use of the treatment solutions.[Solution] A plating apparatus feeding a plating solution to a treatment tank in which an electrode is arranged and plating a workpiece made of a metal so as to perform plating, the plating apparatus characterized by being provided with a plurality of pipes which are connected to an outer wall of the treatment tank and a switch valve which is provided able to rotate at an inner side of the outer wall and which has at least one feed port for making at least one treatment solution feed pipe selected from the plurality of treatment solution feed pipes communicate with the treatment tank.
摘要翻译： [问题]提供一种电镀方法和装置，其不需要为每个处理步骤制备单独的处理槽，因此能够减小设备的尺寸，并且还可以减少处理溶液的使用量。 [解决方案]一种电镀设备，其将电镀液供给到其中布置有电极的处理槽，并且对由金属制成的工件进行电镀以进行电镀，所述电镀设备的特征在于设有多个管，处理罐的外壁和切换阀，其设置成能够在外壁的内侧旋转，并且具有至少一个进料口用于制造从多个处理液进料中选择的至少一种处理溶液进料管管道与处理槽通信。

4. 发明申请

US20060081996A1 Semiconductor device having aluminum electrode and metallic electrode 审中-公开
标题翻译：具有铝电极和金属电极的半导体器件
公开(公告)号：US20060081996A1
公开(公告)日：2006-04-20
申请号：US11248262
申请日：2005-10-13
申请人： Keiji Shinyama , Ichiharu Kondo , Kimiharu Kayukawa , Shoji Miura
发明人： Keiji Shinyama , Ichiharu Kondo , Kimiharu Kayukawa , Shoji Miura
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L23/051 , H01L23/24 , H01L24/03 , H01L24/32 , H01L24/33 , H01L24/48 , H01L2224/04042 , H01L2224/05557 , H01L2224/05558 , H01L2224/05624 , H01L2224/29111 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48624 , H01L2224/48724 , H01L2224/73265 , H01L2224/83194 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01026 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a semiconductor substrate; an aluminum electrode disposed on the surface of the substrate; a protection film disposed on the aluminum electrode and having an opening; and a metallic electrode disposed on a surface of the aluminum electrode through the opening of the protection film. The surface of the aluminum electrode includes a concavity. The concavity has an opening side and a bottom side, which is wider than the opening side. In the device, a concavity and a convexity of the metallic electrode become small.
摘要翻译：半导体器件包括：半导体衬底; 设置在所述基板的表面上的铝电极; 保护膜，设置在铝电极上并具有开口; 以及通过保护膜的开口设置在铝电极的表面上的金属电极。铝电极的表面包括凹面。该凹部具有比开口侧宽的开口侧和底侧。在该装置中，金属电极的凹凸变小。

5. 发明申请

US20050034526A1 Semiconductor sensor and method of plating semiconductor devices 审中-公开
标题翻译：半导体传感器和电镀半导体器件的方法
公开(公告)号：US20050034526A1
公开(公告)日：2005-02-17
申请号：US10950561
申请日：2004-09-28
申请人： Keiji Shinyama , Yositugu Abe , Hiroaki Tanaka , Inao Toyoda , Yoshifumi Watanabe , Ichiharu Kondo
发明人： Keiji Shinyama , Yositugu Abe , Hiroaki Tanaka , Inao Toyoda , Yoshifumi Watanabe , Ichiharu Kondo
IPC分类号： C23C18/16 , C23C18/34 , C23C18/42 , G01F1/34 , G01F1/692 , G01F15/00 , G01L9/00 , H01L23/485 , H01L21/66
CPC分类号： G01L19/147 , B81B7/0012 , B81B2207/07 , G01F1/34 , G01F1/692 , G01F15/006 , G01L19/0645 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05558 , H01L2224/05644 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/48475 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/48799 , H01L2224/48844 , H01L2224/73265 , H01L2224/85051 , H01L2224/8592 , H01L2924/014 , H01L2924/10253 , H01L2924/15153 , H01L2924/15165 , H01L2924/15788 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要： A method of plating a semiconductor wafer while maintaining a uniform thickness of the plated film, preventing the precipitation on the back surface of the wafer and preventing the contamination in the subsequent steps. In directly forming connection terminals on the aluminum electrodes on the semiconductor wafer, the non-electrolytic plating is effected in a state where the back surface of the wafer is covered with an insulator. The insulator is preferably a glass substrate which is a part constituting the product. A semiconductor type sensor exhibits improved corrosion resistance against a corrosive medium. The semiconductor type sensor has, in a semiconductor substrate, a structural portion for detecting the physical quantity or the chemical component of a corrosive medium and an electric quantity conversion element, and has pads which are the output terminals for sending the detected electric signals to an external unit, wherein the pads are protected by a precious metal.
摘要翻译：同时保持电镀膜厚度均匀的方法来镀覆半导体晶片，防止晶片的背面沉淀，防止后续步骤的污染。在半导体晶片上的铝电极上直接形成连接端子时，非电解电镀是在晶片的背面被绝缘体覆盖的状态下进行的。绝缘体优选为构成产品的部分的玻璃基板。半导体型传感器对腐蚀性介质表现出改善的耐腐蚀性。半导体型传感器在半导体基板中具有用于检测腐蚀介质的物理量或化学成分的结构部分和电量转换元件，并且具有作为输出端子的焊盘，用于将检测到的电信号发送到外部单元，其中垫被贵金属保护。

6. 发明申请

US20050006778A1 Semiconductor device having aluminum and metal electrodes and method for manufacturing the same 有权
标题翻译：具有铝和金属电极的半导体器件及其制造方法
公开(公告)号：US20050006778A1
公开(公告)日：2005-01-13
申请号：US10878435
申请日：2004-06-29
申请人： Keiji Shinyama , Shoji Miura , Ichiharu Kondo
发明人： Keiji Shinyama , Shoji Miura , Ichiharu Kondo
IPC分类号： H01L21/60 , H01L23/433 , H01L23/492 , H01L23/48
CPC分类号： H01L24/33 , H01L23/4334 , H01L23/492 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/0401 , H01L2224/04042 , H01L2224/05124 , H01L2224/05155 , H01L2224/05556 , H01L2224/05644 , H01L2224/29111 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73207 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.
摘要翻译：半导体器件包括半导体衬底; 设置在所述基板上的铝电极; 设置在铝电极上的保护膜; 设置在所述保护膜上以露出所述铝电极的开口; 以及通过所述开口设置在所述铝电极的表面上的金属电极。铝电极包括设置在开口下方的凹部。设置在凹部处的铝电极的厚度等于或大于凹部的深度。铝电极的表面包括多个凹部和多个凸部。

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