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1. 发明授权

US08808555B2 Method of manufacturing substrate for liquid discharge head 有权
标题翻译：液体排出头用基板的制造方法
公开(公告)号：US08808555B2
公开(公告)日：2014-08-19
申请号：US13379192
申请日：2010-07-29
申请人： Keiji Watanabe , Shuji Koyama , Hiroyuki Abo , Keiji Matsumoto
发明人： Keiji Watanabe , Shuji Koyama , Hiroyuki Abo , Keiji Matsumoto
IPC分类号： B41J2/16 , B44C1/22 , B41J2/14
CPC分类号： B41J2/1404 , B41J2/14145 , B41J2/1603 , B41J2/1629 , B41J2/1634 , B41J2/1639
摘要： Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports.
摘要翻译：提供了一种制造用于液体排出头的基板的方法，该液体排出头包括第一面，产生用于将液体排放到与第一面相对的第二面的能量的能量产生元件，以及用于供应液体的液体供给口到能量产生元件。该方法包括制备硅衬底，该硅衬底在第一面处具有一蚀刻掩模层，该蚀刻掩模层具有与形成有液体供应端口的部分相对应的开口，并且具有设置在该开口内的第一凹部，要形成液体供给口的第二面的区域，第一凹部和第二凹部由基板的一部分彼此分离; 以及通过晶体各向异性蚀刻从第一面的开口蚀刻硅衬底以形成液体供应端口。

2. 发明申请

US20100216264A1 METHOD OF MANUFACTURING A SUBSTRATE FOR A LIQUID DISCHARGE HEAD 有权
标题翻译：制造液体排放头的基材的方法
公开(公告)号：US20100216264A1
公开(公告)日：2010-08-26
申请号：US12709544
申请日：2010-02-22
申请人： Keiji Matsumoto , Shuji Koyama , Hiroyuki Abo , Keiji Watanabe
发明人： Keiji Matsumoto , Shuji Koyama , Hiroyuki Abo , Keiji Watanabe
IPC分类号： H01L21/311 , H01L21/263
CPC分类号： B41J2/1629 , B41J2/1603 , B41J2/1631 , B41J2/1634
摘要： A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of providing a layer on the second surface of the silicon substrate, wherein the layer has a lower etch rate than silicon when exposed to an etchant of silicon, partially removing the layer so as to expose part of the second surface of the silicon substrate, wherein the exposed part surrounds at least one part of the layer; and wet etching the layer and the exposed part of the second surface of the silicon substrate, using the etchant of silicon, to form a liquid supply port extending from the second surface to the first surface of the silicon substrate.
摘要翻译：一种液体排出头基板的制造方法，所述基板为具有与第二表面相对的第一表面的硅基板，所述方法包括以下步骤：在所述硅基板的第二表面上设置层，其中，所述层具有当暴露于硅的蚀刻剂时，比硅蚀刻速率低，部分地去除该层以暴露硅衬底的第二表面的一部分，其中暴露部分围绕该层的至少一部分; 以及使用硅蚀刻剂湿法蚀刻硅衬底的第二表面的层和暴露部分，以形成从硅衬底的第二表面延伸到第一表面的液体供应端口。

3. 发明授权

US08377828B2 Method of manufacturing a substrate for a liquid discharge head 有权
标题翻译：液体排出头用基板的制造方法
公开(公告)号：US08377828B2
公开(公告)日：2013-02-19
申请号：US12709544
申请日：2010-02-22
申请人： Keiji Matsumoto , Shuji Koyama , Hiroyuki Abo , Keiji Watanabe
发明人： Keiji Matsumoto , Shuji Koyama , Hiroyuki Abo , Keiji Watanabe
IPC分类号： H01L21/302
CPC分类号： B41J2/1629 , B41J2/1603 , B41J2/1631 , B41J2/1634
摘要： A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of providing a layer on the second surface of the silicon substrate, wherein the layer has a lower etch rate than silicon when exposed to an etchant of silicon, partially removing the layer so as to expose part of the second surface of the silicon substrate, wherein the exposed part surrounds at least one part of the layer; and wet etching the layer and the exposed part of the second surface of the silicon substrate, using the etchant of silicon, to form a liquid supply port extending from the second surface to the first surface of the silicon substrate.
摘要翻译：一种液体排出头基板的制造方法，所述基板为具有与第二表面相对的第一表面的硅基板，所述方法包括以下步骤：在所述硅基板的第二表面上设置层，其中，所述层具有当暴露于硅的蚀刻剂时，比硅蚀刻速率低，部分地去除该层以暴露硅衬底的第二表面的一部分，其中暴露部分围绕该层的至少一部分; 以及使用硅蚀刻剂湿法蚀刻硅衬底的第二表面的层和暴露部分，以形成从硅衬底的第二表面延伸到第一表面的液体供应端口。

4. 发明申请

US20120097637A1 METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD 有权
标题翻译：液体放电头的制造方法
公开(公告)号：US20120097637A1
公开(公告)日：2012-04-26
申请号：US13379192
申请日：2010-07-29
申请人： Keiji Watanabe , Shuji Koyama , Hiroyuki Abo , Keiji Matsumoto
发明人： Keiji Watanabe , Shuji Koyama , Hiroyuki Abo , Keiji Matsumoto
IPC分类号： B41J2/16
CPC分类号： B41J2/1404 , B41J2/14145 , B41J2/1603 , B41J2/1629 , B41J2/1634 , B41J2/1639
摘要： Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports.
摘要翻译：提供了一种制造用于液体排出头的基板的方法，该液体排出头包括第一面，产生用于将液体排放到与第一面相对的第二面的能量的能量产生元件，以及用于供应液体的液体供给口到能量产生元件。该方法包括制备硅衬底，该硅衬底在第一面处具有一蚀刻掩模层，该蚀刻掩模层具有与形成有液体供应端口的部分相对应的开口，并且具有设置在该开口内的第一凹部，要形成液体供给口的第二面的区域，第一凹部和第二凹部由基板的一部分彼此分离; 以及通过晶体各向异性蚀刻从第一面的开口蚀刻硅衬底以形成液体供应端口。

5. 发明申请

US20120088317A1 PROCESSING METHOD OF SILICON SUBSTRATE AND PROCESS FOR PRODUCING LIQUID EJECTION HEAD 审中-公开
标题翻译：硅基板的加工方法和生产液体喷射头的方法
公开(公告)号：US20120088317A1
公开(公告)日：2012-04-12
申请号：US13226113
申请日：2011-09-06
申请人： Keisuke Kishimoto , Shuji Koyama , Hiroyuki Abo , Taichi Yonemoto
发明人： Keisuke Kishimoto , Shuji Koyama , Hiroyuki Abo , Taichi Yonemoto
IPC分类号： H01L21/308
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1639
摘要： A processing method of a silicon substrate, including forming on a back surface of a silicon substrate an etching mask layer having an opening portion, measuring a thickness of the silicon substrate, irradiating the opening portion in the etching mask layer with laser from the back surface of the silicon substrate to form in the silicon substrate a modified layer with a thickness that is varied according to the measured thickness of the silicon substrate, carrying out anisotropic etching with regard to the silicon substrate having the modified layer formed therein to form in the back surface a depressed portion which does not pass through the silicon substrate and which has a bottom surface in the silicon substrate, and carrying out dry etching in the depressed portion to form a through-hole passing from the bottom surface of the depressed portion to a front surface of the silicon substrate.
摘要翻译：一种硅衬底的处理方法，包括在硅衬底的背表面上形成具有开口部分的蚀刻掩模层，测量硅衬底的厚度，用激光从背面照射蚀刻掩模层中的开口部分的硅衬底，以在硅衬底中形成具有根据测量的硅衬底的厚度而变化的厚度的改性层，相对于其中形成有改性层的硅衬底进行各向异性蚀刻以在背面形成表面没有通过硅衬底并且在硅衬底中具有底表面的凹陷部分，并且在凹陷部分中进行干蚀刻以形成从凹陷部分的底表面到前面的通孔硅衬底的表面。

6. 发明申请

US20100147793A1 METHOD FOR PRODUCING LIQUID DISCHARGE HEAD 有权
标题翻译：生产液体排放头的方法
公开(公告)号：US20100147793A1
公开(公告)日：2010-06-17
申请号：US12635083
申请日：2009-12-10
申请人： Tadanobu Nagami , Junichi Kobayashi , Takeshi Terada , Makoto Watanabe , Hiroyuki Abo , Mitsunori Toshishige , Yoshinori Tagawa , Shuji Koyama , Kenji Fujii , Masaki Ohsumi , Jun Yamamuro , Hiroyuki Murayama , Yoshinobu Urayama , Taichi Yonemoto
发明人： Tadanobu Nagami , Junichi Kobayashi , Takeshi Terada , Makoto Watanabe , Hiroyuki Abo , Mitsunori Toshishige , Yoshinori Tagawa , Shuji Koyama , Kenji Fujii , Masaki Ohsumi , Jun Yamamuro , Hiroyuki Murayama , Yoshinobu Urayama , Taichi Yonemoto
IPC分类号： G11B5/127
CPC分类号： B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1639 , Y10T29/49401
摘要： The present invention provides a method for producing a liquid discharge head including a silicon substrate having, on a first surface, energy generating elements, and a supply port penetrating the substrate from the first surface to a second surface, which is a rear surface of the first surface of the substrate. The method includes the steps of: preparing the silicon substrate having a sacrifice layer at a portion on the first surface where the ink supply port is to be formed and an etching mask layer having a plurality of openings on the second surface, the volume of a portion of the sacrifice layer at a position corresponding to a portion between two adjacent said openings being smaller than the volume of a portion of the sacrifice layer at a position corresponding to the opening; etching the silicon substrate from the plurality of openings and etching the sacrifice layer.
摘要翻译：本发明提供了一种液体排出头的制造方法，该液体排出头包括硅基板，该第一表面在第一表面上具有能量产生元件和从第一表面穿过该基板的供给口，基片的第一表面。该方法包括以下步骤：在要形成供墨口的第一表面上的一部分制备具有牺牲层的硅衬底和在第二表面上具有多个开口的蚀刻掩模层，牺牲层的与相邻的两个开口之间的部分相对应的位置处的部分比对应于开口的位置处的牺牲层的一部分的体积小; 从多个开口蚀刻硅衬底并蚀刻牺牲层。

7. 发明授权

US07891784B2 Liquid ejection head and method for manufacturing liquid ejection head 有权
标题翻译：液体喷射头和液体喷射头的制造方法
公开(公告)号：US07891784B2
公开(公告)日：2011-02-22
申请号：US12019505
申请日：2008-01-24
申请人： Noriyasu Ozaki , Junichi Kobayashi , Shuji Koyama , Tadanobu Nagami , Yoshinori Tagawa , Kenji Fujii , Hiroyuki Murayama , Masaki Ohsumi , Jun Yamamuro , Yoshinobu Urayama , Hiroyuki Abo , Takeshi Terada , Masahisa Watanabe , Taichi Yonemoto
发明人： Noriyasu Ozaki , Junichi Kobayashi , Shuji Koyama , Tadanobu Nagami , Yoshinori Tagawa , Kenji Fujii , Hiroyuki Murayama , Masaki Ohsumi , Jun Yamamuro , Yoshinobu Urayama , Hiroyuki Abo , Takeshi Terada , Masahisa Watanabe , Taichi Yonemoto
IPC分类号： B41J2/045
CPC分类号： B41J2/14129 , B41J2202/11 , Y10T29/49401
摘要： A liquid ejection head and a method of forming the same. The liquid ejection head includes a substrate, an ejection port, a liquid channel, and a supply port. The substrate has, above one side thereof, an energy generating element configured to generate energy used to eject liquid. The ejection port, from which a liquid is ejected, is located at a position corresponding to the energy generating element. The liquid channel communicates with the ejection port and penetrates the substrate from the one side to another side of the substrate. The supply port communicates with the liquid channel. The substrate has a projecting layer extending inward of an inner peripheral portion of an opening in the supply port in the one side, and the projecting layer and the energy generating element are formed of the same material.
摘要翻译：液体喷射头及其形成方法。液体喷射头包括基板，喷射口，液体通道和供给口。衬底在其一侧上具有被配置为产生用于喷射液体的能量的能量产生元件。排出液体的喷射口位于与能量产生元件相对应的位置。液体通道与喷射口连通并从衬底的一侧到另一侧穿透衬底。供应口与液体通道连通。基板具有从一侧的供给口的开口的内周部向内延伸的突出层，突出层和能量产生元件由相同的材料形成。

8. 发明授权

US08771531B2 Method of producing substrate for liquid ejection head 有权
标题翻译：液体喷射头用基材的制造方法
公开(公告)号：US08771531B2
公开(公告)日：2014-07-08
申请号：US13433806
申请日：2012-03-29
申请人： Kenta Furusawa , Shuji Koyama , Hiroyuki Abo , Taichi Yonemoto
发明人： Kenta Furusawa , Shuji Koyama , Hiroyuki Abo , Taichi Yonemoto
IPC分类号： B41J2/16
CPC分类号： B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1645
摘要： A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
摘要翻译：一种液体喷射头用基材，其特征在于，包括：在液体供给口打开的区域的硅基板的第一面上形成牺牲层，所述牺牲层含有相对于所述硅基板有选择地蚀刻的铝 ; 在作为硅衬底的第一表面的后表面的第二表面上形成蚀刻掩模，所述蚀刻掩模具有对应于所述牺牲层的开口; 通过使用蚀刻掩模作为掩模蚀刻硅衬底并使用含有8质量％以上且小于15质量％的四甲基氢氧化铵的第一蚀刻剂的第一蚀刻步骤; 并且在第一蚀刻步骤之后，通过使用含有15质量％以上且25质量％以下的四甲基氢氧化铵的第二蚀刻剂除去牺牲层的第二蚀刻工序。

9. 发明授权

US08492281B2 Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate 有权
标题翻译：液体组合物，硅基板的制造方法以及液体排出头基板的制造方法
公开(公告)号：US08492281B2
公开(公告)日：2013-07-23
申请号：US13556991
申请日：2012-07-24
申请人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
发明人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
IPC分类号： H01L21/311
CPC分类号： H01L21/30608 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1635 , B41J2/1639 , B41J2/1645 , C09K13/02
摘要： A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.
摘要翻译：用于对硅基板进行晶体各向异性蚀刻的液体组合物包括氢氧化铯，碱性有机化合物和水，所述硅基板具有由氧化硅膜形成的蚀刻掩模。

10. 发明申请

US20120289055A1 LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE 有权
标题翻译：液体组合物，生产硅基材的方法以及生产液体放电头基材的方法
公开(公告)号：US20120289055A1
公开(公告)日：2012-11-15
申请号：US13556991
申请日：2012-07-24
申请人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
发明人： Hiroyuki Abo , Taichi Yonemoto , Shuji Koyama , Kenta Furusawa , Keisuke Kishimoto
IPC分类号： H01L21/306
CPC分类号： H01L21/30608 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1635 , B41J2/1639 , B41J2/1645 , C09K13/02
摘要： A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.
摘要翻译：用于对硅基板进行晶体各向异性蚀刻的液体组合物包括氢氧化铯，碱性有机化合物和水，所述硅基板具有由氧化硅膜形成的蚀刻掩模。

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