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    • 2. 发明授权
    • Method of producing substrate for liquid ejection head
    • 液体喷射头用基材的制造方法
    • US08771531B2
    • 2014-07-08
    • US13433806
    • 2012-03-29
    • Kenta FurusawaShuji KoyamaHiroyuki AboTaichi Yonemoto
    • Kenta FurusawaShuji KoyamaHiroyuki AboTaichi Yonemoto
    • B41J2/16
    • B41J2/1603B41J2/1629B41J2/1631B41J2/1639B41J2/1645
    • A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
    • 一种液体喷射头用基材,其特征在于,包括:在液体供给口打开的区域的硅基板的第一面上形成牺牲层,所述牺牲层含有相对于所述硅基板有选择地蚀刻的铝 ; 在作为硅衬底的第一表面的后表面的第二表面上形成蚀刻掩模,所述蚀刻掩模具有对应于所述牺牲层的开口; 通过使用蚀刻掩模作为掩模蚀刻硅衬底并使用含有8质量%以上且小于15质量%的四甲基氢氧化铵的第一蚀刻剂的第一蚀刻步骤; 并且在第一蚀刻步骤之后,通过使用含有15质量%以上且25质量%以下的四甲基氢氧化铵的第二蚀刻剂除去牺牲层的第二蚀刻工序。
    • 5. 发明申请
    • METHOD OF PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD
    • 生产用于液体喷射头的基材的方法
    • US20120267342A1
    • 2012-10-25
    • US13433806
    • 2012-03-29
    • Kenta FurusawaShuj i KoyamaHiroyuki AboTaichi Yonemoto
    • Kenta FurusawaShuj i KoyamaHiroyuki AboTaichi Yonemoto
    • B44C1/22
    • B41J2/1603B41J2/1629B41J2/1631B41J2/1639B41J2/1645
    • A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
    • 一种液体喷射头用基材,其特征在于,包括:在液体供给口打开的区域的硅基板的第一面上形成牺牲层,所述牺牲层含有相对于所述硅基板有选择地蚀刻的铝 ; 在作为硅衬底的第一表面的后表面的第二表面上形成蚀刻掩模,所述蚀刻掩模具有对应于所述牺牲层的开口; 通过使用蚀刻掩模作为掩模蚀刻硅衬底并使用含有8质量%以上且小于15质量%的四甲基氢氧化铵的第一蚀刻剂的第一蚀刻步骤; 并且在第一蚀刻步骤之后,通过使用含有15质量%以上且25质量%以下的四甲基氢氧化铵的第二蚀刻剂除去牺牲层的第二蚀刻工序。