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1. 发明授权

US4463279A Doped photoconductive film comprising selenium and tellurium 失效
标题翻译：包含硒和碲的掺杂光导膜
公开(公告)号：US4463279A
公开(公告)日：1984-07-31
申请号：US380779
申请日：1982-05-21
申请人： Keiichi Shidara , Kenkichi Tanioka , Teruo Uchida , Chushirou Kusano , Yukio Takasaki , Yasuhiko Nonaka , Eisuke Inoue
发明人： Keiichi Shidara , Kenkichi Tanioka , Teruo Uchida , Chushirou Kusano , Yukio Takasaki , Yasuhiko Nonaka , Eisuke Inoue
IPC分类号： H01L31/0248 , H01J29/45 , H01L31/08 , H01J31/38
CPC分类号： H01L31/08 , H01J29/456
摘要： A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.
摘要翻译：一种光导电膜，其包含主要由硒制成的光导电层和在层的厚度方向上添加有碲的区域，其中所述区域的空穴流动方向上的一部分中的至少一个添加有碲和与添加有碲的所述区域相邻的另一区域的空穴流中的一部分掺杂有选自氧化物，氟化物和属于II，III族的元素中的至少一种，以及 VII能够在硒中形成负空间电荷，浓度平均为10〜1重量％。这种氧化物，氟化物和元素的典型实例包括CuO，In2O3，SeO2，V2O5，MoO3，WO3，GaF2 + L，InF3，Zn，Ga，In，Cl，I，Br等。可以显着提高归因于高强度入射光的后图像特性。

2. 发明授权

US4952839A Photoconductive device and method of operating the same 失效
标题翻译：光导元件及其操作方法
公开(公告)号：US4952839A
公开(公告)日：1990-08-28
申请号：US420773
申请日：1989-10-12
申请人： Kenkichi Tanioka , Mitsuo Kosugi , Junichi Yamazaki , Keiichi Shidara , Kazuhisa Taketoshi , Tatsuro Kawamura , Eikyuu Hiruma , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yochizumi Ikeda , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
发明人： Kenkichi Tanioka , Mitsuo Kosugi , Junichi Yamazaki , Keiichi Shidara , Kazuhisa Taketoshi , Tatsuro Kawamura , Eikyuu Hiruma , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yochizumi Ikeda , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
IPC分类号： H01J29/45
CPC分类号： H01J29/456
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

3. 发明授权

US4888521A Photoconductive device and method of operating the same 失效
标题翻译：光导元件及其操作方法
公开(公告)号：US4888521A
公开(公告)日：1989-12-19
申请号：US69156
申请日：1987-07-02
申请人： Kenkichi Tanioka , Keiichi Shidara , Tatsuro Kawamura , Junichi Yamazaki , Eikyuu Hiruma , Kazuhisa Taketoshi , Shiro Suzuki , Takashi Yamashita , Mitsuo Kosugi , Yochizumi Ikeda , Masaaki Aiba , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
发明人： Kenkichi Tanioka , Keiichi Shidara , Tatsuro Kawamura , Junichi Yamazaki , Eikyuu Hiruma , Kazuhisa Taketoshi , Shiro Suzuki , Takashi Yamashita , Mitsuo Kosugi , Yochizumi Ikeda , Masaaki Aiba , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
IPC分类号： H01J29/45 , H01J31/38
CPC分类号： H01J29/456
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
摘要翻译：公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非晶半导体层。还公开了操作这种光电导器件的方法。通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。

4. 发明授权

US5233265A Photoconductive imaging apparatus 失效
标题翻译：光电成像设备
公开(公告)号：US5233265A
公开(公告)日：1993-08-03
申请号：US561678
申请日：1990-08-01
申请人： Yukio Takasaki , Kazutaka Tsuji , Tatsuo Makishima , Tadaaki Hirai , Sachio Ishioka , Tatsuro Kawamura , Keiichi Shidara , Eikyu Hiruma , Kenkichi Tanioka , Junichi Yamazaki , Kenji Sameshima , Hirokazu Matsubara , Kazuhisa Taketoshi , Mitsuo Kosugi , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yoshizumi Ikeda , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Hirofumi Ogawa
发明人： Yukio Takasaki , Kazutaka Tsuji , Tatsuo Makishima , Tadaaki Hirai , Sachio Ishioka , Tatsuro Kawamura , Keiichi Shidara , Eikyu Hiruma , Kenkichi Tanioka , Junichi Yamazaki , Kenji Sameshima , Hirokazu Matsubara , Kazuhisa Taketoshi , Mitsuo Kosugi , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yoshizumi Ikeda , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Hirofumi Ogawa
IPC分类号： H01J29/45 , H01L31/0376 , H01L31/09 , H01L31/107 , H01L31/20
CPC分类号： H01J29/456 , H01L31/03765 , H01L31/095 , H01L31/107 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.
摘要翻译：公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非晶半导体层。还公开了操作这种光电导器件的方法。通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。在本发明的一个方面，非晶半导体层是非晶态Se。在本发明的另一方面，非晶半导体层主要由至少包含氢或卤素元素的四面体元素组成。当使用主要由四面体元素组成的非晶半导体层时，电荷倍增效应主要在非晶半导体的内部产生，因此可以获得具有高灵敏度的热稳定的光电导器件，同时保持良好的光响应。

5. 发明授权

US4866332A Target of image pickup tube 失效
标题翻译：图像拾取管的目标
公开(公告)号：US4866332A
公开(公告)日：1989-09-12
申请号：US16403
申请日：1987-02-19
申请人： Yukio Takasaki , Tatsuo Makishima , Kazutaka Tsuji , Tadaaki Hirai , Eisuke Inoue , Yasuhiko Nonaka , Naohiro Goto , Masanao Yamamoto , Keiichi Shidara , Kenkichi Tanioka , Takashi Yamashita , Tatsuro Kawamura , Eikyuu Hiruma , Shirou Suzuki , Masaaki Aiba
发明人： Yukio Takasaki , Tatsuo Makishima , Kazutaka Tsuji , Tadaaki Hirai , Eisuke Inoue , Yasuhiko Nonaka , Naohiro Goto , Masanao Yamamoto , Keiichi Shidara , Kenkichi Tanioka , Takashi Yamashita , Tatsuro Kawamura , Eikyuu Hiruma , Shirou Suzuki , Masaaki Aiba
IPC分类号： H01J29/45
CPC分类号： H01J29/456
摘要： A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.
摘要翻译：具有透明基板，透明导电膜，主要由非晶形Se形成的p型光电导膜的图像拾取管的目标和能够在与p型交联的界面处形成整流接触的n型导电膜，使用整流接触作为反向偏压，其特征在于，所述p型光电导膜至少含有在膜厚度方向上具有大于35％的区域和至少60重量％的Te，至少至少含有0.005〜5重量％的能够在膜厚度方向上形成非晶态Se的浅层的材料的区域即使在高温下操作也具有良好的后图像特性。

6. 发明授权

US4617248A Doped photoconductive film including selenium and tellurium 失效
标题翻译：掺杂的光电导膜包括硒和碲
公开(公告)号：US4617248A
公开(公告)日：1986-10-14
申请号：US736149
申请日：1985-05-20
申请人： Kenkichi Tanioka , Keiichi Shidara , Takao Kuriyama , Yukio Takasaki , Tadaaki Hirai , Yasuhiko Nonaka , Eisuke Inoue
发明人： Kenkichi Tanioka , Keiichi Shidara , Takao Kuriyama , Yukio Takasaki , Tadaaki Hirai , Yasuhiko Nonaka , Eisuke Inoue
IPC分类号： H01J31/26 , H01J1/78 , H01J29/45 , H01L31/0248 , H01L31/08 , G03G5/08 , G03G5/09
CPC分类号： H01J29/456
摘要： A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.
摘要翻译：公开了与光电导型的图像拾取管的靶相关的光电导膜的结构。该感光膜主要由Se形成，Te的中心部分添加Te。此外，被认为形成通过在Se中捕获电子而形成负空间电荷的Se和GaF 3等中的电子形成深阱陷阱的As被添加在与Te存在的区域相邻的区域中。此外，存在GaF 3等的区域中的膜的厚度比迄今采用的值更薄（不小于20，不大于90）。

7. 发明授权

US4563611A Image pick-up tube target 失效
标题翻译：图像拾取管目标
公开(公告)号：US4563611A
公开(公告)日：1986-01-07
申请号：US548022
申请日：1983-11-02
申请人： Yasuhiko Nonaka , Eisuke Inoue , Keiichi Shidara , Kenkichi Tanioka
发明人： Yasuhiko Nonaka , Eisuke Inoue , Keiichi Shidara , Kenkichi Tanioka
IPC分类号： H01J29/45 , H01L31/08 , H01J31/26
CPC分类号： H01J29/456
摘要： A photoconductive image pick-up tube target comprises a transparent substrate, an N-type conductive film formed on the transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and containing Se, As and Te as sensitizer. The P-type photoconductive film includes a first layer contiguous to the N-type conductive film and containing 94.+-.1% by weight of Se and 6.+-.0.5% by weight of As, a second layer formed on the first layer and containing 64.+-.4% by weight of Se, 3.+-.0.5% by weight of As, and 33.+-.2% by weight of Te, a third layer formed on the second layer and containing Se and As, and a fluoride doped region extending over the first layer and a front half layer of the second layer and having a fluoride concentration of 0.1 to 3.0% by weight. The third layer has an As concentration which has a peak of 28.+-.1% by weight at a site contiguous to a rear half layer of the second layer and reduces gradually.
摘要翻译：感光图像拾取管目标包括透明基板，形成在透明基板上的N型导电膜和与N型导电膜整流接触的P型光电导膜，并且包含Se，As和Te作为敏化剂。 P型光电导膜包括与N型导电膜邻接的第一层，含有94 +/- 1重量％的Se和6 +/- 0.5重量％的As，形成在第一层上的第二层并且含有64 +/- 4重量％的Se，3 +/- 0.5重量％的As和33 +/- 2重量％的Te，第三层形成在第二层上并含有Se和As，以及在所述第一层上延伸的氟化物掺杂区域和所述第二层的前半层，并且氟化物浓度为0.1〜3.0重量％。第三层的As浓度在与第二层的后半层相邻的位置具有28 +/- 1重量％的峰值，并且逐渐降低。

8. 发明授权

US4717854A Image pick-up tube target 失效
标题翻译：图像拾取管目标
公开(公告)号：US4717854A
公开(公告)日：1988-01-05
申请号：US830714
申请日：1986-02-19
申请人： Masanao Yamamoto , Eisuke Inoue , Keiichi Shidara , Eikyuu Hiruma
发明人： Masanao Yamamoto , Eisuke Inoue , Keiichi Shidara , Eikyuu Hiruma
IPC分类号： H01J29/45 , H01J31/26 , H01J31/38
CPC分类号： H01J29/456
摘要： An image pick-up tube target comprising an N-type conductive film formed on a transparent substrate, and P-type photoconductive film in rectifying contact with the N-type conductive film and comprising a first layer containing As, fluoride and Se, a second layer containing As, Te and Se, a portion of said second layer containing fluoride, a third layer containing As and Se, the composition of the third layer being different along the direction of thickness thereof, a fourth layer containing As and Se, wherein the concentration of As in the second layer varies continuously along the direction of thickness thereof, and in the second layer the minimum As concentration is located on the first layer side of the second layer and the maximum As concentration is located on the third layer side of the second layer.
摘要翻译：包括形成在透明基板上的N型导电膜的图像拾取管目标和与N型导电膜整流接触的P型光电导膜，并且包括含有As，氟化物和Se的第一层，第二层含有As，Te和Se的层，含有氟化物的第二层的一部分，含有As和Se的第三层，第三层的组成沿其厚度方向不同，含有As和Se的第四层，其中第二层中的As浓度沿其厚度方向连续变化，在第二层中，最小As浓度位于第二层的第一层侧，最大As浓度位于第二层的第三层侧第二层。

9. 发明授权

US4816715A Image pick-up tube target 失效
标题翻译：图像拾取管目标
公开(公告)号：US4816715A
公开(公告)日：1989-03-28
申请号：US71308
申请日：1987-07-09
申请人： Takaaki Unnai , Yasuhiko Nonaka , Eisuke Inoue
发明人： Takaaki Unnai , Yasuhiko Nonaka , Eisuke Inoue
IPC分类号： H01J29/45 , H01J31/38
CPC分类号： H01J29/456
摘要： There is disclosed an image pick-up tube target comprising an N-type conductive film formed on a transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and comprising a first layer containing As and Se, the average concentration of As in the first layer being below 8% by weight, a second layer containing As and Se, a third layer containing As and Se, the concentration of As being in the range of 8 to 20% by weight and thickness of the third layer being in the range of 5 to 50% of the total thickness of the P-type photoconductive film, in the order named, and a beam landing layer.
摘要翻译：公开了一种图像拾取管靶，其包括形成在透明基板上的N型导电膜和与N型导电膜整流接触的P型光电导膜，并且包括含有As和Se的第一层，第一层中的As的平均浓度低于8重量％，含有As和Se的第二层，含有As和Se的第三层，As的浓度在8〜20重量％的范围内，所述第三层为所述P型光电导膜的总厚度的5〜50％的范围，以及束着陆层。

10. 发明授权

US4587456A Image pickup tube target 失效
标题翻译：图像拾取管目标
公开(公告)号：US4587456A
公开(公告)日：1986-05-06
申请号：US571473
申请日：1984-01-17
申请人： Eisuke Inoue , Yasuhiko Nonaka , Masanao Yamamoto
发明人： Eisuke Inoue , Yasuhiko Nonaka , Masanao Yamamoto
IPC分类号： H01J29/45 , H01J31/10 , H01J31/26
CPC分类号： H01J29/456
摘要： An image pickup tube target includes a Se-As-Te photoconductive layer whose arsenic concentration changes in a direction of thickness of the Se-As-Te photoconductive layer, a carrier extraction layer having a high arsenic concentration and being contiguous to the Se-As-Te photoconductive layer, a capacitive layer having a low arsenic concentration and being contiguous to the carrier extraction layer, a doped layer obtained by doping In.sub.2 O.sub.3, MoO.sub.2 or a mixture thereof in an interface between the carrier extraction layer and the capacitive layer.
摘要翻译：图像拾取管靶包括Se-As-Te光电导层，其砷浓度在Se-As-Te光电导层的厚度方向上改变，砷浓度高且与Se-As-Te光电导层邻接的载体提取层 -Te光电导层，具有低砷浓度且与载体提取层邻接的电容层，通过在载流子提取层和电容层之间的界面中掺杂In 2 O 3，MoO 2或其混合物而获得的掺杂层。

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