专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06423977B1 Pattern size evaluation apparatus 失效
标题翻译：图案尺寸评估装置
公开(公告)号：US06423977B1
公开(公告)日：2002-07-23
申请号：US09030510
申请日：1998-02-25
申请人： Kei Hayasaki , Shinichi Ito , Kenji Kawano , Soichi Inoue , Katsuya Okumura
发明人： Kei Hayasaki , Shinichi Ito , Kenji Kawano , Soichi Inoue , Katsuya Okumura
IPC分类号： G01N2186
CPC分类号： G01N21/956
摘要： A pattern size evaluation apparatus comprising an illumination optical system for projecting parallel light rays of a predetermined wavelength on a monitoring area formed on an object, the monitoring area being formed at a position different from a device pattern formed on the object, a light intensity detection optical system for detecting diffracted light from the monitoring area, and a device pattern size evaluation section for evaluating a size of the device pattern based on an intensity of diffracted light from the monitoring area.
摘要翻译：一种图案尺寸评估装置，包括用于在形成在物体上的监视区域上投射预定波长的平行光线的照明光学系统，所述监视区域形成在与形成在物体上的装置图案不同的位置，光强度检测用于检测来自监视区域的衍射光的光学系统，以及用于基于来自监视区域的衍射光的强度来评估装置图案的尺寸的装置图案尺寸评估部。

2. 发明授权

US07018932B2 Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device 失效
标题翻译：半导体装置的制造方法以及半导体装置的制造装置
公开(公告)号：US07018932B2
公开(公告)日：2006-03-28
申请号：US10377597
申请日：2003-03-04
申请人： Shinichi Ito , Tatsuhiko Higashiki , Katsuya Okumura , Kenji Kawano , Soichi Inoue
发明人： Shinichi Ito , Tatsuhiko Higashiki , Katsuya Okumura , Kenji Kawano , Soichi Inoue
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70675 , H01J2237/30438
摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.
摘要翻译：一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像，至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。

3. 发明授权

US06251544B1 Exposure dose measuring method and exposure dose measuring mask 有权
标题翻译：曝光剂量测量方法和曝光剂量测量面膜
公开(公告)号：US06251544B1
公开(公告)日：2001-06-26
申请号：US09334941
申请日：1999-06-17
申请人： Soichi Inoue , Shinichi Ito , Kei Hayasaki
发明人： Soichi Inoue , Shinichi Ito , Kei Hayasaki
IPC分类号： G03F900
CPC分类号： G03F7/70558 , G03F1/44
摘要： In an exposure dose measuring method for measuring an effective exposure dose on a wafer by printing mask patterns formed on a mask onto a resist coated on the wafer by exposure, each of the mask patterns has light transmitting sections and light shielding sections repeated in a period p, a ratio of areas of the light transmitting sections to areas of the light shielding sections of each of the mask patterns differs from ratios of those of the others of the mask patterns, and the period p is set so as to satisfy a relationship of p/M≦&lgr;/(1+&sgr;)NA, where an exposure light wavelength at the time of exposing the mask patterns is &lgr;, a numerical aperture at a wafer side is NA, an illumination coherence factor is &sgr;, and a mask pattern magnification for patterns to be formed on the wafer is M.
摘要翻译：在曝光剂量测量方法中，通过将掩模上形成的掩模图案通过曝光印刷在涂覆在晶片上的抗蚀剂上来测量晶片上的有效曝光剂量，每个掩模图案具有在一段时间内重复的透光部分和遮光部分 p，光透射部分的面积与每个掩模图案的遮光部分的面积的比率与其他掩模图案的比率的比率不同，并且周期p被设定为满足其中的关系曝光掩模图案时的曝光光波长为羔羊，晶圆侧的数值孔径为NA，照度相干系数为西格玛，在晶片上形成的图案的掩模图案放大率为M.

4. 发明授权

US6159642A Exposure mask and method of manufacturing thereof, and pattern data generating method for an exposure mask 失效
标题翻译：曝光掩模及其制造方法以及曝光掩模的图案数据生成方法
公开(公告)号：US6159642A
公开(公告)日：2000-12-12
申请号：US813049
申请日：1997-03-07
申请人： Kenji Kawano , Shinichi Ito , Satoshi Tanaka , Soichi Inoue , Hideki Kanai , Ikuo Yoneda
发明人： Kenji Kawano , Shinichi Ito , Satoshi Tanaka , Soichi Inoue , Hideki Kanai , Ikuo Yoneda
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/26 , G03F1/30
摘要： An exposure mask includes a transparent substrate having a light shielding pattern and an aperture pattern thereon for transmitting an exposure light and arranged in that any two adjacent apertures of the same pattern size in the aperture pattern are different from each other in the etched depth, wherein a difference between the aperture pattern size and its adjacent light shielding pattern size, and the trench depth in the aperture pattern are determined by a sum of the aperture pattern size and its adjacent light shielding pattern size.
摘要翻译：曝光掩模包括具有遮光图案和其上的孔径图案的透明基板，用于透射曝光光，并且布置为在蚀刻深度中孔径图案中相同图案尺寸的任何两个相邻孔径彼此不同，其中孔径图案尺寸与其相邻的遮光图案尺寸之间的差异以及孔径图案中的沟槽深度由孔径图案尺寸和其相邻的遮光图案尺寸之和决定。

5. 发明授权

US5866280A Exposure mask and manufacturing method thereof 失效
标题翻译：曝光掩模及其制造方法
公开(公告)号：US5866280A
公开(公告)日：1999-02-02
申请号：US710408
申请日：1996-09-17
申请人： Shinichi Ito , Kenji Kawano , Soichi Inoue , Satoshi Tanaka
发明人： Shinichi Ito , Kenji Kawano , Soichi Inoue , Satoshi Tanaka
IPC分类号： G03F1/28 , G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F9/00
CPC分类号： G03F1/26 , G03F1/30
摘要： An exposure mask comprises a phase shift section including a plurality of opening patterns formed by making openings in part of a shading film provided on a transmissive substrate and digging part of the substrate, and a non-phase shift section including at least one opening pattern. The opening pattern of the non-phase shift section has a dig whose amount of digging has been adjusted according to the amount of digging in the opening patterns of the phase shift section.
摘要翻译：曝光掩模包括相移部分，其包括通过在设置在透射基板上的遮光膜的一部分上形成开口和挖掘基板的一部分而形成的多个开口图案，以及包括至少一个开口图案的非相移部分。非相移部分的打开模式具有根据相移部分的打开模式中的挖掘量来调整挖掘量的挖掘。

6. 发明授权

US5514499A Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same 失效
标题翻译：相移掩模，其包括多层结构和使用其形成图案的方法
公开(公告)号：US5514499A
公开(公告)日：1996-05-07
申请号：US249038
申请日：1994-05-25
申请人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
发明人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/34 , G03F9/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/32
摘要： A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
摘要翻译：用于通过在光反射时形成具有相位差的反射光来曝光图案的反射相移掩模包括反射曝光光的基板，形成在基板上的部分上的相移层和形成在基板上的光传输介质基板和相移层，其中相移层的厚度被设定为使得由基板反射的光与由相移层反射的光之间的相位差成为180度。

7. 发明授权

US06376139B1 Control method for exposure apparatus and control method for semiconductor manufacturing apparatus 失效
标题翻译：半导体制造装置的曝光装置的控制方法和控制方法
公开(公告)号：US06376139B1
公开(公告)日：2002-04-23
申请号：US09671502
申请日：2000-09-27
申请人： Tadahito Fujisawa , Soichi Inoue , Kenji Kawano , Shinichi Ito , Ichiro Mori
发明人： Tadahito Fujisawa , Soichi Inoue , Kenji Kawano , Shinichi Ito , Ichiro Mori
IPC分类号： G03F900
CPC分类号： G03F7/70625 , G03F7/70633 , G03F7/70641
摘要： A control method for an exposure apparatus, in which an exposure amount and a focus value are set in transferring a circuit pattern on a mask onto a resist formed on a wafer by the exposure apparatus, includes the steps of arranging, on the mask, an exposure amount monitor mark and a focus monitor mark used to separately monitor the effective exposure amount and the focus value on the wafer, transferring the exposure amount monitor mark and the focus monitor mark onto the resist to form an exposure amount monitor pattern and a focus monitor pattern, measuring the states of the exposure amount monitor pattern and the focus monitor pattern at least at one of timings after exposure, after post exposure baking, during a cooling process after baking, during a process after cooling, during development, and after development, on the basis of the measurement results, calculating the difference between an optimum exposure amount value and an exposure amount set value set in the exposure apparatus and the difference between an optimum focus value and a focus set value set in the exposure apparatus in transferring the exposure amount monitor mark and the focus monitor mark onto the resist, and changing the focus set value and the exposure amount set value of the exposure apparatus in accordance with the calculated differences.
摘要翻译：一种曝光装置的控制方法，其中设置曝光量和聚焦值以将掩模上的电路图案转印到通过曝光装置在晶片上形成的抗蚀剂上的步骤包括以下步骤：在掩模上布置曝光量监视标记和用于分别监视晶片上的有效曝光量和聚焦值的聚焦监视器标记，将曝光量监视标记和聚焦监视标记转印到抗蚀剂上以形成曝光量监视器图案和聚焦监视器至少在曝光后的定时，曝光后烘烤，烧成后的冷却过程中，冷却后，显影处理和显影后的处理中，至少测定曝光量监视器图案和聚焦监视器图案的状态，基于测量结果，计算最佳曝光量值与曝光设定中设定的曝光量设定值之间的差以及将曝光量监视标记和聚焦监视标记转印到抗蚀剂上的曝光装置中设置的最佳聚焦值和聚焦设定值之间的差异，并且改变曝光的聚焦设定值和曝光量设定值仪器按照计算出的差异。

8. 发明授权

US5686209A Phase shifting mask and method of forming a pattern using the same 失效
标题翻译：相移掩模和使用其形成图案的方法
公开(公告)号：US5686209A
公开(公告)日：1997-11-11
申请号：US754162
申请日：1996-11-22
申请人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
发明人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/34 , G03F9/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/32
摘要： A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
摘要翻译：用于通过在光反射时形成具有相位差的反射光来曝光图案的反射相移掩模包括反射曝光光的基板，形成在基板上的部分上的相移层和形成在基板上的光传输介质基板和相移层，其中相移层的厚度被设定为使得由基板反射的光与由相移层反射的光之间的相位差成为180度。

9. 发明授权

US5609977A Reflection phase shifting mask and method of forming a pattern using the same 失效
标题翻译：反射相移掩模和使用其形成图案的方法
公开(公告)号：US5609977A
公开(公告)日：1997-03-11
申请号：US589638
申请日：1996-01-22
申请人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
发明人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/34 , G03F9/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/32
摘要： A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
摘要翻译：用于通过在光反射时形成具有相位差的反射光来曝光图案的反射相移掩模包括反射曝光光的基板，形成在基板上的部分上的相移层和形成在基板上的光传输介质基板和相移层，其中相移层的厚度被设定为使得由基板反射的光与由相移层反射的光之间的相位差成为180度。

10. 发明授权

US06316163B1 Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US06316163B1
公开(公告)日：2001-11-13
申请号：US09163421
申请日：1998-09-30
申请人： Shunko Magoshi , Masamitsu Itoh , Shinji Sato , Soichi Inoue , Kazuyoshi Sugihara , Katsuya Okumura
发明人： Shunko Magoshi , Masamitsu Itoh , Shinji Sato , Soichi Inoue , Kazuyoshi Sugihara , Katsuya Okumura
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/78 , G03F7/7045 , H01J37/3174
摘要： A method for forming patterns, in which pattern transfer to the same photosensitive material on a first layer is carried out using both light exposure and charged particle beam exposure, comprises the steps of performing a predetermined geometric operation between data associated with a pattern to be transferred to the first layer and data associated with a pattern to be transferred to a second layer different from the first layer, separating the pattern data associated with the pattern to be transferred to the first layer into first exposure pattern data for charged particle beam exposure and second exposure pattern data for light exposure, and performing pattern transfer on to the first layer based on the result of the separation.
摘要翻译：一种用于形成图案的方法，其中使用曝光和带电粒子束曝光两者进行对第一层上的相同感光材料的图案转印，包括以下步骤：在与待转印图案相关联的数据之间执行预定的几何运算将与要传送到不同于第一层的第二层的图案相关联的数据相关联的数据与将要传送到第一层的图案相关联的图案数据分离成用于带电粒子束曝光的第一曝光图案数据和第二层用于曝光的曝光图案数据，以及基于分离结果将图案转印到第一层上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式