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1. 发明授权

US08394230B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08394230B2
公开(公告)日：2013-03-12
申请号：US12161238
申请日：2007-03-13
申请人： Kazuyuki Tezuka
发明人： Kazuyuki Tezuka
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02 , H01J37/32431 , H01J2237/20 , H01L21/6831
摘要： A plasma processing apparatus is provided with a replacement time detecting unit, which detects the status of residual charges which attract a semiconductor wafer and detects a time when an electrostatic chuck is to be replaced, at a time when a direct voltage application from a direct current source is stopped and the semiconductor wafer is brought up from the electrostatic chuck.
摘要翻译：等离子体处理装置设置有替换时间检测单元，其在从直流施加直流电压时检测吸引半导体晶片的剩余电荷的状态并检测静电卡盘被更换的时间源极停止，半导体晶片从静电卡盘上升。

2. 发明申请

US20120031500A1 FLUID CONTROL APPARATUS 有权
标题翻译：流体控制装置
公开(公告)号：US20120031500A1
公开(公告)日：2012-02-09
申请号：US13203866
申请日：2009-11-06
申请人： Jun Hirose , Kazuyuki Tezuka , Yohei Uchida , Mutsunori Koyonogi , Takahiro Matsuda , Ryousuke Dohi , Kouji Nishino , Nobukazu Ikeda
发明人： Jun Hirose , Kazuyuki Tezuka , Yohei Uchida , Mutsunori Koyonogi , Takahiro Matsuda , Ryousuke Dohi , Kouji Nishino , Nobukazu Ikeda
IPC分类号： F17D1/16
CPC分类号： C23C16/45561 , H01L21/67017 , Y10T137/0396
摘要： To provide a fluid control apparatus capable of reducing the space, while reducing the cost.A fluid control apparatus 1 has a fluid controlling unit 2 and a fluid introducing unit 3. The fluid introducing unit 3 is divided into three parts: a first and a second inlet-side shutoff/open parts 5, 6 disposed on the inlet side, each made up of 2×N/2 on-off valves 23, and a fluid controlling unit-side shutoff/open part 7 made up of 4×M on-off valves 23, disposed between the first and second inlet-side shutoff/open parts 5, 6 and the fluid controlling unit 2.
摘要翻译：提供能够减少空间的流体控制装置，同时降低成本。流体控制装置1具有流体控制单元2和流体引入单元3.流体引入单元3被分成三部分：设置在入口侧的第一和第二入口侧截止/打开部分5,6，每个都由2×N / 2开关阀23和由4×M开关阀23构成的流体控制单元侧关闭/打开部分7，其设置在第一和第二入口侧截止阀/ 打开部分5,6和流体控制单元2。

3. 发明授权

US07472581B2 Vacuum apparatus 有权
标题翻译：真空装置
公开(公告)号：US07472581B2
公开(公告)日：2009-01-06
申请号：US11368479
申请日：2006-03-07
申请人： Takashi Kitazawa , Atsushi Kobayashi , Kazuyuki Tezuka
发明人： Takashi Kitazawa , Atsushi Kobayashi , Kazuyuki Tezuka
IPC分类号： G01M3/04
CPC分类号： G01M3/3236
摘要： A leak rate measuring method measures a leak rate of a vacuum apparatus including a vacuum chamber in which an object is accommodated to be processed, a first gas exhaust pump connected to the vacuum chamber via a first valve serving as a conductance variable valve, and a second valve connected to a downstream side of the first gas exhaust pump in a gas flowing direction. In the leak rate measuring method, there is provided a circulating path branched from a gas exhaust path between the first gas exhaust pump and the second valve and connected to the vacuum pump to communicate therewith. The pressure inside the vacuum chamber is monitored by circulating a gas into the vacuum chamber through the circulating path with first gas exhaust pump under the condition that the first valve is set at a predetermined conductance and the second valve is closed.
摘要翻译：泄漏率测量方法测量包括被处理物体的真空室的真空装置的泄漏率，经由用作导电可变阀的第一阀连接到真空室的第一排气泵，以及第二阀在气体流动方向连接到第一排气泵的下游侧。在泄漏率测定方法中，设置有从第一排气泵和第二阀之间的排气路径分支并与真空泵连接的循环路径。通过第一气体排出泵将气体循环通过循环路径，在第一阀被设定在预定电导和第二阀关闭的条件下，将真空室内的气体循环进入监测真空室内的压力。

4. 发明授权

US07299104B2 Substrate processing apparatus and substrate transferring method 有权
标题翻译：基板加工装置及基板转印方法
公开(公告)号：US07299104B2
公开(公告)日：2007-11-20
申请号：US10858049
申请日：2004-06-02
申请人： Kazuyuki Tezuka , Hiroshi Koizumi , Tsuyoshi Moriya , Hiroyuki Nakayama
发明人： Kazuyuki Tezuka , Hiroshi Koizumi , Tsuyoshi Moriya , Hiroyuki Nakayama
IPC分类号： G06F19/00 , G06F7/66
CPC分类号： H01L21/67276 , H01L21/67742 , H01L21/67745
摘要： Shock waves occurring when opening a gate valve between two vacuum chambers and peeling of particles by a viscous force taking place when a gas is supplied into a vacuum chamber are necessary to be suppressed by the apparatus and method of the invention, whereby contamination of a substrate by particles is suppressed. If one vacuum chamber is a substrate processing chamber for performing a vacuum process on the substrate and the other chamber is a transfer chamber having a substrate transfer device therein, the gate valve is opened when inner pressures of both the vacuum chambers are less than 66.5 Pa and higher one thereof is less than twice a lower one thereof. Preferably, a purge gas for peeling of particles is supplied, before supplying the purge gas for pressure control, into the substrate processing chamber with a flow rate greater than that of the purge gas for pressure control.
摘要翻译：通过本发明的装置和方法来抑制当气体供应到真空室中时通过发生粘性力而在两个真空室之间打开闸阀时产生的冲击波和颗粒的剥离是必要的，由此基板的污染颗粒被抑制。如果一个真空室是用于在基板上进行真空处理的基板处理室，另一个室是其中具有基板传送装置的传送室，则当两个真空室的内部压力小于66.5Pa时，闸阀打开其中较高的一个小于其较低的一个的两倍。优选地，在将用于压力控制的吹扫气体供给到用于压力控制的吹扫气体的流量以上的流量之前，供给用于剥离颗粒的吹扫气体。

5. 发明申请

US20050211383A1 Magnetron plasma-use magnetic field generation device 审中-公开
标题翻译：磁控管等离子体使用磁场发生装置
公开(公告)号：US20050211383A1
公开(公告)日：2005-09-29
申请号：US10525240
申请日：2003-08-21
申请人： Koji Miyata , Kazuyuki Tezuka , Koichi Tateshita , Hiroo Ono , Kazuya Nagaseki , Shinji Himori
发明人： Koji Miyata , Kazuyuki Tezuka , Koichi Tateshita , Hiroo Ono , Kazuya Nagaseki , Shinji Himori
IPC分类号： C23F1/00 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/31116 , H01J37/32623 , H01J37/3266 , H01J37/32688 , H01L21/31138 , H01L21/32137 , H01L21/67069
摘要： Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.
摘要翻译：公开了一种用于磁控管等离子体的磁场发生器。磁场发生器设置有多个磁段，并且在处理室内的工件衬底的周边周围产生预定的多极磁场。控制多极磁场的强度，使得多极磁场的状态与不同的等离子体处理相匹配。此外，可以改变多极磁场的图案，以便匹配基板的不同尺寸。

6. 发明申请

US20070160447A1 Semiconductor treating device 审中-公开
标题翻译：半导体处理装置
公开(公告)号：US20070160447A1
公开(公告)日：2007-07-12
申请号：US10588851
申请日：2005-02-04
申请人： Norihiko Amikura , Kazuyuki Tezuka , Risako Miyoshi
发明人： Norihiko Amikura , Kazuyuki Tezuka , Risako Miyoshi
IPC分类号： H01L21/677
CPC分类号： H01L21/67167 , C23C16/455 , C23C16/45561
摘要： A semiconductor treating device (1) includes treating chamber (2) connected to a common transportation chamber (8) and treating a substrate (W) to be treated. A gas supply system (40) for supplying system (40) for supplying a predetermined gas to each of the treating chambers (2) is attached to each chamber. The gas supply system (40) has a primary side connection unit (23) connected to the source of the predetermined gas and has a flow rate control unit (13). The primary side connection unit (23) connected to the source of the predetermined gas and has a flow rate control unit (13). The primary side connection unit (23) is placed on the lower side of the corresponding treating chamber (2). The flow rate control unit (13) is placed on a gas line for supplying the gas from the primary side connection unit (23) to the corresponding treating chamber (2). The flow rate control unit (13) is provided such that at least a part of it is superposed on the upper side of the primary side connection unit (23).
摘要翻译：半导体处理装置（1）包括连接到公共运输室（8）并处理待处理的基板（W）的处理室（2）。用于向每个处理室（2）供应预定气体的用于供应系统（40）的气体供应系统（40）被附接到每个室。气体供给系统（40）具有连接到预定气体源的初级侧连接单元（23），并具有流量控制单元（13）。连接到预定气体源的初级侧连接单元（23）具有流量控制单元（13）。初级侧连接单元（23）设置在相应的处理室（2）的下侧。流量控制单元（13）被放置在用于将气体从初级侧连接单元（23）供应到相应的处理室（2）的气体管线上。流量控制单元（13）设置成使其至少一部分重叠在初级侧连接单元（23）的上侧。

7. 外观设计

USD494552S1 Exhaust ring for manufacturing semiconductors 失效
公开(公告)号：USD494552S1
公开(公告)日：2004-08-17
申请号：US29183537
申请日：2003-06-12
申请人： Kazuyuki Tezuka , Takashi Kitazawa , Norihiko Amikura , Hiroshi Koizumi
设计人： Kazuyuki Tezuka , Takashi Kitazawa , Norihiko Amikura , Hiroshi Koizumi

8. 发明授权

US09169558B2 Fluid control apparatus 有权
标题翻译：流体控制装置
公开(公告)号：US09169558B2
公开(公告)日：2015-10-27
申请号：US13203866
申请日：2009-11-06
申请人： Jun Hirose , Kazuyuki Tezuka , Yohei Uchida , Mutsunori Koyomogi , Takahiro Matsuda , Ryousuke Dohi , Kouji Nishino , Nobukazu Ikeda
发明人： Jun Hirose , Kazuyuki Tezuka , Yohei Uchida , Mutsunori Koyomogi , Takahiro Matsuda , Ryousuke Dohi , Kouji Nishino , Nobukazu Ikeda
IPC分类号： C23C16/455 , H01L21/67
CPC分类号： C23C16/45561 , H01L21/67017 , Y10T137/0396
摘要： To provide a fluid control apparatus capable of reducing the space, while reducing the cost. A fluid control apparatus has a fluid controlling unit and a fluid introducing unit. The fluid introducing unit is divided into three parts: a first and a second inlet-side shutoff/open parts disposed on the inlet side, each made up of 2×N/2, disposed between the first and second inlet-side shutoff/open parts and the fluid controlling unit.
摘要翻译：提供能够减少空间的流体控制装置，同时降低成本。流体控制装置具有流体控制单元和流体引入单元。流体引入单元被分为三部分：设置在入口侧的第一和第二入口侧截止/打开部分，每个由2×N / 2构成，设置在第一和第二入口侧截止/打开之间零件和流体控制单元。

9. 发明申请

US20120132367A1 PROCESSING APPARATUS 审中-公开
标题翻译：加工设备
公开(公告)号：US20120132367A1
公开(公告)日：2012-05-31
申请号：US13303392
申请日：2011-11-23
申请人： Kazuyuki Tezuka , Kenichi Kato , Atsushi Sawachi , Takamichi Kikuchi , Takanori Mimura
发明人： Kazuyuki Tezuka , Kenichi Kato , Atsushi Sawachi , Takamichi Kikuchi , Takanori Mimura
IPC分类号： H01L21/306 , C23C16/455
CPC分类号： H01J37/32449 , C23C16/45561 , C23C16/5096 , H01J37/32091 , H01J37/32366 , H01J37/32385 , H01J37/3244
摘要： There is provided a processing apparatus including a processing gas discharge unit provided within a processing chamber so as to face a mounting table and configured to discharge a processing gas into the processing chamber; a first space corresponding to a central portion of a processing target object; a second space corresponding to an edge portion of the processing target object; at least one third space formed between the first space and the second space; and a processing gas distribution unit including processing gas distribution pipes and valves. The spaces are provided within the processing gas discharge unit and partitioned by partition walls. At the spaces, there are formed discharge holes for discharging the processing gas. The processing gas distribution pipes communicate with the spaces, and the valves are opened or closed to allow adjacent processing gas distribution pipes to communicate with each other or be isolated from each other.
摘要翻译：提供了一种处理装置，其包括：处理气体排出单元，设置在处理室内，以面对安装台并构造成将处理气体排放到处理室中; 对应于处理目标对象的中心部分的第一空间; 对应于处理目标对象的边缘部分的第二空间; 形成在所述第一空间和所述第二空间之间的至少一个第三空间; 以及包括处理气体分配管和阀的处理气体分配单元。这些空间设置在处理气体排出单元内并由分隔壁分隔开。在空间处，形成有用于排出处理气体的排出孔。处理气体分配管与空间连通，并且阀被打开或关闭以允许相邻处理气体分配管彼此连通或彼此隔离。

10. 发明申请

US20100218895A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100218895A1
公开(公告)日：2010-09-02
申请号：US12161238
申请日：2007-03-13
申请人： Kazuyuki Tezuka
发明人： Kazuyuki Tezuka
IPC分类号： H01L21/3065 , B05C11/00 , H01L21/683 , C23F1/08 , H01L21/205
CPC分类号： H01L21/02 , H01J37/32431 , H01J2237/20 , H01L21/6831
摘要： A plasma processing apparatus is provided with a replacement time detecting unit, which detects the status of residual charges which attract a semiconductor wafer and detects a time when an electrostatic chuck is to be replaced, at a time when a direct voltage application from a direct current source is stopped and the semiconductor wafer is brought up from the electrostatic chuck.
摘要翻译：等离子体处理装置设置有替换时间检测单元，其在从直流施加直流电压时检测吸引半导体晶片的剩余电荷的状态并检测静电卡盘被更换的时间源极停止，半导体晶片从静电卡盘上升。

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