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1. 发明申请

US20050211383A1 Magnetron plasma-use magnetic field generation device 审中-公开
标题翻译：磁控管等离子体使用磁场发生装置
公开(公告)号：US20050211383A1
公开(公告)日：2005-09-29
申请号：US10525240
申请日：2003-08-21
申请人： Koji Miyata , Kazuyuki Tezuka , Koichi Tateshita , Hiroo Ono , Kazuya Nagaseki , Shinji Himori
发明人： Koji Miyata , Kazuyuki Tezuka , Koichi Tateshita , Hiroo Ono , Kazuya Nagaseki , Shinji Himori
IPC分类号： C23F1/00 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/31116 , H01J37/32623 , H01J37/3266 , H01J37/32688 , H01L21/31138 , H01L21/32137 , H01L21/67069
摘要： Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.
摘要翻译：公开了一种用于磁控管等离子体的磁场发生器。磁场发生器设置有多个磁段，并且在处理室内的工件衬底的周边周围产生预定的多极磁场。控制多极磁场的强度，使得多极磁场的状态与不同的等离子体处理相匹配。此外，可以改变多极磁场的图案，以便匹配基板的不同尺寸。

2. 发明授权

US07338576B2 Plasma processing device 失效
标题翻译：等离子处理装置
公开(公告)号：US07338576B2
公开(公告)日：2008-03-04
申请号：US10490027
申请日：2002-09-19
申请人： Hiroo Ono , Koichi Tateshita , Masanobu Honda , Kazuya Nagaseki , Daisuke Hayashi
发明人： Hiroo Ono , Koichi Tateshita , Masanobu Honda , Kazuya Nagaseki , Daisuke Hayashi
IPC分类号： H01L21/00
CPC分类号： H01J37/32623 , H01J37/32688
摘要： Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3B, 3C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.
摘要翻译：磁场形成机构21的每个磁体段22被构造成使得在每个磁体段22的磁极设置成面对如图1所示的真空室1之后。如图3A所示，相邻的磁体段22沿相反方向同步旋转，因此每隔一个磁体元件22沿与图1和图2所示相同的方向旋转。 3 B，3 C，从而控制形成在真空室1中并围绕半导体晶片W的多极磁场的状态。因此，可以容易地控制并设置多极磁场的状态，根据一种等离子体处理工艺，容易提供良好的加工。

3. 发明授权

US08419337B2 Gate valve and substrate processing system using same 失效
标题翻译：闸阀和基板处理系统使用它
公开(公告)号：US08419337B2
公开(公告)日：2013-04-16
申请号：US12849465
申请日：2010-08-03
申请人： Koichi Tateshita , Tetsuya Mochizuki
发明人： Koichi Tateshita , Tetsuya Mochizuki
IPC分类号： H01L21/677
CPC分类号： F16K3/186 , F16K51/02
摘要： A gate valve includes a valve body to be pressed against a peripheral surface around opening through which a processing target object is loaded and unloaded, pressed members arranged on a surface of the valve body around the opening, a main slider which slides in a direction parallel to the peripheral surface around the opening and pressing mechanisms, provided at the main slider, for pressing the respective pressed members. Each of the pressing mechanisms includes a cam having a protrusion for pressing the valve body against the peripheral surface around the opening and an inclined portion sloping downward from the protrusion. The pressing mechanisms serve to press the valve body in a direction substantially perpendicular to the peripheral surface around the opening in a state that the valve body is positioned to face the opening, so that the valve body is pressed against the peripheral surface around the opening.
摘要翻译：闸阀包括：阀体，其被压靠在开口周围的表面上，加工对象物被加载和卸载，按压构件布置在阀体的围绕开口的表面上，主滑块沿平行的方向滑动设置在主滑动件周围的打开和按压机构周围的表面，用于按压各个按压部件。每个按压机构包括凸轮，凸轮具有用于将阀体压靠在开口周围的周边的突起和从突起向下倾斜的倾斜部。压力机构用于在阀体被定位成面向开口的状态下沿与开口周围的大致垂直的方向按压阀体，使得阀体被压靠在开口周围的周围表面。

4. 发明申请

US20110033266A1 GATE VALVE AND SUBSTRATE PROCESSING SYSTEM USING SAME 失效
标题翻译：门阀和基板加工系统
公开(公告)号：US20110033266A1
公开(公告)日：2011-02-10
申请号：US12849465
申请日：2010-08-03
申请人： Koichi Tateshita , Tetsuya Mochizuki
发明人： Koichi Tateshita , Tetsuya Mochizuki
IPC分类号： H01L21/67 , F16K3/00 , H01L21/677
CPC分类号： F16K3/186 , F16K51/02
摘要： A gate valve includes a valve body to be pressed against a peripheral surface around opening through which a processing target object is loaded and unloaded, pressed members arranged on a surface of the valve body around the opening, a main slider which slides in a direction parallel to the peripheral surface around the opening and pressing mechanisms, provided at the main slider, for pressing the respective pressed members. Each of the pressing mechanisms includes a cam having a protrusion for pressing the valve body against the peripheral surface around the opening and an inclined portion sloping downward from the protrusion. The pressing mechanisms serve to press the valve body in a direction substantially perpendicular to the peripheral surface around the opening in a state that the valve body is positioned to face the opening, so that the valve body is pressed against the peripheral surface around the opening.
摘要翻译：闸阀包括：阀体，其被压靠在开口周围的表面上，加工对象物被加载和卸载，按压构件布置在阀体的围绕开口的表面上，主滑块沿平行的方向滑动设置在主滑动件周围的打开和按压机构周围的表面，用于按压各个按压部件。每个按压机构包括凸轮，凸轮具有用于将阀体压靠在开口周围的周边的突起和从突起向下倾斜的倾斜部。压力机构用于在阀体被定位成面向开口的状态下沿与开口周围的大致垂直的方向按压阀体，使得阀体被压靠在开口周围的周围表面。

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