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1. 发明授权

US06462622B1 High-frequency amplifier and high-frequency multistage amplifier 失效
标题翻译：高频放大器和高频多级放大器
公开(公告)号：US06462622B1
公开(公告)日：2002-10-08
申请号：US09988326
申请日：2001-11-19
申请人： Kazutomi Mori , Kazuhisa Yamauchi , Koji Yamanaka , Kazuhiko Nakahara , Tadashi Takagi
发明人： Kazutomi Mori , Kazuhisa Yamauchi , Koji Yamanaka , Kazuhiko Nakahara , Tadashi Takagi
IPC分类号： H03F304
CPC分类号： H03F1/3205 , H03F3/1935 , H03F2200/294 , H03F2200/372
摘要： A T-type circuit having series resistors and a parallel resistor is arranged on the outside of an amplifier, a signal is amplified in the amplifier while stabilizing the signal by using the T-type circuit functioning as a stabilizing circuit, and the amplified signal is output. In this case, values of the series resistors and the parallel resistor of the T-type circuit are determined so as to set an output load impedance obtained by seeing the output side of the high-frequency amplifier from the amplifier to a value near to or slightly lower than a value of the conjugate complex impedance of an output impedance of the amplifier. Therefore, the output signal having a high output electric power and a low distortion can be obtained in the high-frequency amplifier while keeping a gain and a noise characteristic of the high-frequency amplifier.
摘要翻译：具有串联电阻器和并联电阻器的T型电路布置在放大器的外部，通过使用用作稳定电路的T型电路稳定信号，放大器中的信号被放大，放大的信号为输出。在这种情况下，确定T型电路的串联电阻器和并联电阻器的值，以便将通过从放大器看到高频放大器的输出侧而获得的输出负载阻抗设置为接近或等于略低于放大器的输出阻抗的共轭复阻抗的值。因此，在保持高频放大器的增益和噪声特性的同时，可以在高频放大器中获得具有高输出功率和低失真的输出信号。

2. 发明申请

US20130175544A1 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20130175544A1
公开(公告)日：2013-07-11
申请号：US13824357
申请日：2010-11-10
申请人： Toshiyuki Oishi , Hiroshi Otsuka , Koji Yamanaka , Kazuhisa Yamauchi , Masatake Hangai , Masatoshi Nakayama
发明人： Toshiyuki Oishi , Hiroshi Otsuka , Koji Yamanaka , Kazuhisa Yamauchi , Masatake Hangai , Masatoshi Nakayama
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/0254 , H01L29/0607 , H01L29/0657 , H01L29/205 , H01L29/7786
摘要： It is an object to attain both high gain and a broad band (that is, to attain both reduction in a gate-drain capacitance and reduction in a source-drain capacitance). Provided is a semiconductor device, including: a GaN channel layer (3) through which electrons travel; a barrier layer (4) which is provided on the GaN channel layer in order to form two-dimensional electron gas in the GaN channel layer and which contains at least any one of In, Al, and Ga and contains N; a gate electrode (8), a source electrode (6), and a drain electrode (7); and a plate (20) formed of a material having polarization, which is provided between the gate electrode (8) and the drain electrode (7), the plate being held in contact with a part of the barrier layer (4).
摘要翻译：本发明的目的是获得高增益和宽带（即，获得栅极 - 漏极电容的减小和源极 - 漏极电容的减小）。提供了一种半导体器件，包括：电子行进通过的GaN沟道层（3）; 阻挡层（4），其设置在所述GaN沟道层上，以在所述GaN沟道层中形成二维电子气，并且其包含In，Al和Ga中的至少任一个并且包含N; 栅电极（8），源电极（6）和漏电极（7）; 以及设置在所述栅极（8）和所述漏电极（7）之间的具有偏振材料的板（20），所述板与所述阻挡层（4）的一部分保持接触。

3. 发明授权

US07893770B2 Power amplification device 有权
标题翻译：功率放大器
公开(公告)号：US07893770B2
公开(公告)日：2011-02-22
申请号：US12518664
申请日：2007-12-05
申请人： Kazuhisa Yamauchi , Yuji Sakai , Koichi Fujisaki , Akira Inoue
发明人： Kazuhisa Yamauchi , Yuji Sakai , Koichi Fujisaki , Akira Inoue
IPC分类号： H03F3/68
CPC分类号： H03F1/0238 , H03F1/0244 , H03F1/0288
摘要： Provided is a power amplification device including: a DC power supply that outputs a drain voltage; a Doherty amplifier including a carrier amplifier and a peak amplifier, which are connected in parallel, and amplifies an RF signal; a voltage control circuit that outputs a first instruction to output a low voltage when an output power is equal to or lower than a given value, and outputs a second instruction to output a high voltage when the output power is larger than the given value; and a voltage converter circuit that converts the drain voltage to a voltage lower than the drain voltage and applies the converted voltage to drain terminals of the carrier amplifier and the peak amplifier according to the first instruction, and applies the drain voltage directly to the drain terminals of the carrier amplifier and the peak amplifier according to the second instruction.
摘要翻译：提供了一种功率放大装置，包括：输出漏极电压的直流电源; 包括并联连接的载波放大器和峰值放大器的Doherty放大器，并放大RF信号; 电压控制电路，当输出功率等于或低于给定值时，输出第一指令以输出低电压，并且当输出功率大于给定值时输出第二指令以输出高电压; 以及电压转换器电路，其将漏极电压转换为低于漏极电压的电压，并根据第一指令将转换的电压施加到载波放大器和峰值放大器的漏极端子，并将漏极电压直接施加到漏极端子的载波放大器和峰值放大器。

4. 发明授权

US4402763A High conductive heat-resistant aluminum alloy 失效
标题翻译：高导电耐热铝合金
公开(公告)号：US4402763A
公开(公告)日：1983-09-06
申请号：US252017
申请日：1981-04-08
申请人： Kenichi Sato , Kazuhisa Yamauchi , Yasumasa Hanaki , Takasi Kondo , Minoru Yokota
发明人： Kenichi Sato , Kazuhisa Yamauchi , Yasumasa Hanaki , Takasi Kondo , Minoru Yokota
IPC分类号： H01B1/02 , C22C21/00 , C22F1/00 , C22F1/04 , H01B13/00
CPC分类号： C22F1/04 , C22C21/00
摘要： A heat-resistant aluminum alloy for electrical use, having high heat resistance and conductivity, obtained by subjecting an Al-Zr alloy comprising 0.23-0.35% Zr, the balance consisting of ordinary impurities and aluminum, to melting, casting, hot rolling in the state of high temperature or continuous heating, cold working to a predetermined size, ageing at a temperature within the range of 310.degree. C.-390.degree. C. for 50-400 hours so that Al.sub.3 Zr is dispersed uniformly and in fine particles, and, optionally, further cold working to a degree not exceeding 30% of reduction of area. The resultant aluminum alloy has conductivity in excess of 58% IACS, same strength as 1350 aluminum wire, and 10% softening temperature higher than 400.degree. C. at one hour annealing.
摘要翻译：通过使包含0.23-0.35％Zr的Al-Zr合金（其余由普通杂质和铝组成）进行熔融，铸造，热轧，得到耐热性和导电性高的耐热铝合金高温或连续加热状态，冷加工至预定尺寸，在310℃-390℃的温度范围内老化50-400小时，使得Al 3 Zr均匀分散在细颗粒中，可选地，进一步的冷加工到不超过面积减少30％的程度。所得铝合金在1小时退火时具有超过58％IACS的导电性，与1350铝线相同的强度和高于400℃的10％软化温度。

5. 发明授权

US08072288B2 Directional coupler 有权
标题翻译：定向耦合器
公开(公告)号：US08072288B2
公开(公告)日：2011-12-06
申请号：US12531553
申请日：2008-04-11
申请人： Kazuhisa Yamauchi , Masatoshi Nakayama , Yasuhiro Onaka , Tomokazu Hamada , Satoru Ishizaka
发明人： Kazuhisa Yamauchi , Masatoshi Nakayama , Yasuhiro Onaka , Tomokazu Hamada , Satoru Ishizaka
IPC分类号： H01P5/18 , H01P5/16
CPC分类号： H01P5/16 , H01P5/185
摘要： A directional coupler capable of improving a directionality of a directional coupler body including four terminals. The directional coupler includes a directional coupler body including the four terminals of an input port, an output port, a coupling port, and an isolation port; and a combiner for combining powers of an output signal of the coupling port and an output signal of the isolation port of the directional coupler body; and a directionality improving circuit for amplifying or attenuating at least one of the output signal of the coupling port and the output signal of the isolation port before outputting the same, and the combiner combines powers of the output signals amplified or attenuated by the directionality improving circuit.
摘要翻译：一种定向耦合器，其能够改善包括四个端子的定向耦合器主体的方向性。定向耦合器包括定向耦合器主体，其包括输入端口，输出端口，耦合端口和隔离端口的四个端子; 以及组合器，用于组合耦合端口的输出信号的功率和定向耦合器主体的隔离端口的输出信号; 以及用于在输出耦合端口的输出信号和隔离端口的输出信号之前放大或衰减至少一个输出信号的方向性改善电路，并且组合器组合由方向性改进电路放大或衰减的输出信号的功率。

6. 发明申请

US20100097160A1 DIRECTIONAL COUPLER 有权
标题翻译：方向耦合器
公开(公告)号：US20100097160A1
公开(公告)日：2010-04-22
申请号：US12531553
申请日：2008-04-11
申请人： Kazuhisa Yamauchi , Masatoshi Nakayama , Yasuhiro Onaka , Tomokazu Hamada , Satoru Ishizaka
发明人： Kazuhisa Yamauchi , Masatoshi Nakayama , Yasuhiro Onaka , Tomokazu Hamada , Satoru Ishizaka
IPC分类号： H01P5/18
CPC分类号： H01P5/16 , H01P5/185
摘要： A directional coupler capable of improving a directionality of a directional coupler body including four terminals. The directional coupler includes a directional coupler body including the four terminals of an input port, an output port, a coupling port, and an isolation port; and a combiner for combining powers of an output signal of the coupling port and an output signal of the isolation port of the directional coupler body; and a directionality improving circuit for amplifying or attenuating at least one of the output signal of the coupling port and the output signal of the isolation port before outputting the same, and the combiner combines powers of the output signals amplified or attenuated by the directionality improving circuit.
摘要翻译：一种定向耦合器，其能够改善包括四个端子的定向耦合器主体的方向性。定向耦合器包括定向耦合器主体，其包括输入端口，输出端口，耦合端口和隔离端口的四个端子; 以及组合器，用于组合耦合端口的输出信号的功率和定向耦合器主体的隔离端口的输出信号; 以及用于在输出耦合端口的输出信号和隔离端口的输出信号之前放大或衰减至少一个输出信号的方向性改善电路，并且组合器组合由方向性改进电路放大或衰减的输出信号的功率。

7. 发明授权

US4804153A Method and apparatus for withdrawing long-sized objects 失效
标题翻译：取出长尺寸物体的方法和装置
公开(公告)号：US4804153A
公开(公告)日：1989-02-14
申请号：US31560
申请日：1987-02-17
申请人： Masanobu Nishio , Kazuo Sawada , Kazuhisa Yamauchi , Saburo Yosimura
发明人： Masanobu Nishio , Kazuo Sawada , Kazuhisa Yamauchi , Saburo Yosimura
IPC分类号： B21C47/02 , B21C47/32 , B22D11/00 , B22D11/06 , B65H65/00
CPC分类号： B22D11/005 , B22D11/0611 , B22D11/062 , B22D11/0694 , B65H65/00
摘要： A method and apparatus for continuously withdrawing an elongated product such as from a melt a fine wire is based on the rotating liquid medium spinning method. A layer of cooling liquid (14) is centrifugally formed on the inner peripheral surface of a rotational drum (13). Disposed inside the rotational drum (13) is a winding reel (19) having a rotating winding peripheral surface (18). A holder element (20) adapted to be magnetically attracted to the winding peripheral surface (18) is initially placed on the inner peripheral surface of the rotational drum (13). A molten material injected into the drum by a nozzle (16) is quenched for solidification in the cooling liquid (14) to form the product. Initially, the leading end emerging from the nozzle rides over the holder element (20) which then carries the leading end onto the winding peripheral surface (18) and holds it thereon by magnetic attraction. The product (17) is then wound on the winding peripheral surface (18) with its portion fixed by the holder element (20 ) serving as the winding starting end.
摘要翻译： PCT No.PCT / JP86 / 00318 Sec。 371日期1987年2月17日 102（e）日期1987年2月17日PCT Filted 1986年6月24日PCT公布。公开号WO87 / 00155 日期：1987年1月15日。一种用于从熔体连续取出细长产品的方法和装置，其基于旋转液体介质纺丝方法。在旋转鼓（13）的内周面上离心地形成冷却液层14。设置在旋转滚筒（13）内的是具有旋转的卷绕周边表面（18）的卷绕卷轴（19）。首先将适于被磁吸引到绕组周边表面（18）的保持器元件（20）放置在旋转滚筒（13）的内周表面上。通过喷嘴（16）注入到滚筒中的熔融材料被淬火以在冷却液体（14）中固化以形成产品。最初，从喷嘴出来的前端越过保持元件（20），保持元件（20）将前端承载在绕组周边表面（18）上，并通过磁吸引力将其保持在其上。然后将产品（17）卷绕在绕组周边表面（18）上，其部分由用作绕组起始端的保持器元件（20）固定。

8. 发明授权

US4188117A Method and apparatus for detecting leaks in hollow fiber membrane modules 失效
标题翻译：用于检测中空纤维膜组件泄漏的方法和装置
公开(公告)号：US4188117A
公开(公告)日：1980-02-12
申请号：US900582
申请日：1978-04-27
申请人： Kazuhisa Yamauchi , Taku Tanaka , Syuji Kawai
发明人： Kazuhisa Yamauchi , Taku Tanaka , Syuji Kawai
IPC分类号： G01N21/41 , B01D63/02 , B01D65/10 , G01M3/38 , G01N21/45 , G01N21/16
CPC分类号： B01D65/104 , G01M3/38 , G01N21/45 , A61M2205/705
摘要： Leaks from a hollow fiber membrane module comprising a housing having one or more hollow fiber bundles positioned therein with at least one end of each bundle being sealed by a cementing layer includes the step of applying a pressurized gas to the external surfaces of the hollow fibers. The gas which is used must have a refractive index different from the refractive index of the ambient atmosphere. The atmospheric volume adjacent the sealed end of the module is optically monitored for refraction patterns caused by gas leaking through the sealed end into the volume. The optical system includes a light source and components for directing light from the source along an optical path including the monitored volume. Light which is passed through the monitored volume is directed to an optical display where the refraction patterns of the leaking gas will be visible. The method and apparatus permit leaks to be located without the use of liquids.
摘要翻译：一种中空纤维膜组件的泄漏包括具有一个或多个中空纤维束的壳体，所述中空纤维束定位在其中，每个束的至少一端由固结层密封，包括将加压气体施加到中空纤维的外表面的步骤。使用的气体必须具有与环境大气的折射率不同的折射率。对模块密封端附近的大气体积进行光学监测，以便由通过密封端泄漏到体积中的气体引起的折射图案。光学系统包括光源和用于沿着包括监视的体积的光路引导来自光源的光的部件。通过监视的体积的光被引导到光学显示器，其中泄漏气体的折射图案将是可见的。该方法和装置允许在不使用液体的情况下定位泄漏。

9. 发明授权

US5252550A Method of producing a composite oxide superconductive wire 失效
标题翻译：复合氧化物超导线的制造方法
公开(公告)号：US5252550A
公开(公告)日：1993-10-12
申请号：US737572
申请日：1991-07-26
申请人： Kazuhisa Yamauchi , Kazuya Ohmatsu , Tetsuya Ishida , Tomoji Gotoh , Syuji Yazu , Tetsuji Jodai
发明人： Kazuhisa Yamauchi , Kazuya Ohmatsu , Tetsuya Ishida , Tomoji Gotoh , Syuji Yazu , Tetsuji Jodai
IPC分类号： H01L39/12 , B21C37/04 , B21C37/08 , C01B13/14 , C01G1/00 , C04B35/00 , C04B35/45 , H01B12/04 , H01B13/00 , H01L39/24 , H01B5/02
CPC分类号： H01L39/248 , Y10S505/704 , Y10S505/74 , Y10T29/49014 , Y10T29/5185 , Y10T29/5187
摘要： The present invention relates to a method of producing a superconducting composite wire. The method comprises forming a continuously supplied metal or metal alloy strip into a flume-shaped strip. A ceramic copper oxide superconducting powder material is filled in the interior of the flume-shaped strip. The flume-shaped strip is rolled such that a first edge of the strip approaches a second edge of the strip to form a tubing having a gap between the first and second edges and also having the powder material enveloped therein. The gap allows free access of oxygen to the powder material during a subsequent sintering step. The powder material is then sintered at a temperature of between 0 and 100.degree. C. less than the lowest melting point of any constituent of the material. The strip enveloping the sintered material is then deformed to a reduced cross-section and subjected to a heat treatment.
摘要翻译：本发明涉及一种制造超导复合线材的方法。该方法包括将连续供应的金属或金属合金条形成为槽形条。陶瓷氧化铜超导粉末材料填充在槽形条的内部。水槽状条被卷起，使得条带的第一边缘接近条带的第二边缘，以形成在第一和第二边缘之间具有间隙并且还包含在其中的粉末材料的管道。间隙允许在随后的烧结步骤期间自由地进入氧气到粉末材料。然后将粉末材料在低于该材料的任何成分的最低熔点的0-100℃的温度下烧结。然后将包裹烧结材料的条变形为横截面减小并进行热处理。

10. 发明授权

US4944925A Apparatus for producing single crystals 失效
标题翻译：单晶制造装置
公开(公告)号：US4944925A
公开(公告)日：1990-07-31
申请号：US357663
申请日：1989-05-25
申请人： Kazuhisa Yamauchi , Kazuo Sawada , Yoshihiro Nakai
发明人： Kazuhisa Yamauchi , Kazuo Sawada , Yoshihiro Nakai
IPC分类号： C30B15/00 , C30B15/24
CPC分类号： C30B15/24 , C30B15/00 , C30B29/30 , C30B29/42 , Y10T117/1036 , Y10T117/1044 , Y10T117/1068
摘要： A method of producing single crystals is characterized in that in withdrawing a semiconductor or dielectric material from its molten state while allowing it to grow into a single crystal solid, a die heated to a temperature higher than the solidifying point of the melt is disposed at the melt withdrawing outlet and the single crystal is withdrawn through the die.
摘要翻译：制造单晶的方法的特征在于，在使半导体或介电材料从其熔融状态中取出并使其生长成单晶固体的同时，将加热至高于熔融物凝固点的温度的模具设置在熔融抽出口，单晶通过模具取出。

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