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    • 5. 发明申请
    • METHOD OF FABRICATING SUPERCONDUCTING WIRE AND SUPERCONDUCTING APPARATUS
    • 制造超导电线和超导装置的方法
    • US20090137399A1
    • 2009-05-28
    • US12063941
    • 2006-08-30
    • Munetsugu UeyamaKazuya Ohmatsu
    • Munetsugu UeyamaKazuya Ohmatsu
    • H01B12/02H01L39/24
    • H01L39/248
    • An object of the present invention is to provide a method of fabricating a superconducting wire that can reduce the fabrication cost and increase the mechanical strength of the superconducting wire, and a superconducting apparatus including a superconducting wire obtained by the method. The present invention provides a method of fabricating a superconducting wire including the steps of forming a superconducting layer on a substrate or an intermediate layer formed on the substrate, forming a silver stabilization layer on the superconducting layer immersing the substrate in a copper sulfate solution after the superconducting layer and the silver stabilization layer are formed thereon, and forming a copper stabilization layer on the silver stabilization layer by electroplating with the copper sulfate solution as a plating bath. A superconducting apparatus including a superconducting wire obtained by the method is also provided.
    • 本发明的目的是提供一种可以降低超导线材的制造成本和增加机械强度的超导线材的制造方法,以及包括通过该方法获得的超导线材的超导装置。 本发明提供一种制造超导线的方法,包括以下步骤:在衬底或形成在衬底上的中间层上形成超导层,在超导层上形成银稳定层,将基底浸入硫酸铜溶液中 在其上形成超导层和银稳定层,并且通过用硫酸铜溶液电镀作为镀浴在银稳定层上形成铜稳定层。 还提供了包括通过该方法获得的超导线的超导装置。
    • 7. 发明授权
    • Method of preparing oxide superconducting wire
    • 制备氧化物超导线的方法
    • US06192573B1
    • 2001-02-27
    • US09055287
    • 1998-04-06
    • Shuji HahakuraNobuhiro SagaKazuya OhmatsuKenichi Sato
    • Shuji HahakuraNobuhiro SagaKazuya OhmatsuKenichi Sato
    • H01L3924
    • H01L39/248H01B12/02H01B12/10H01L39/143Y02E40/641Y02E40/644Y10S505/704Y10T29/49014
    • An oxide superconducting wire having a circular or substantially circular sectional shape and exhibiting a high critical current density comparable to that of a tape-shaped wire is provided. The oxide superconducting wire consists of a plurality of filaments extending along the longitudinal direction of the wire in the form of ribbons, and a stabilizer matrix covering the filaments. The aspect ratio of the width to the thickness of each filament is 4 to 40, and the thickness of each filament is 5 to 50 &mgr;m. A section of the wire is in a circular or substantially circular shape. The wire exhibits a critical current density of at least 2000 A/cm2 at a temperature of 77 K with no application of a magnetic field. It is preferable that the plurality of filaments are substantially rotation-symmetrically arranged with respect to the center of the wire. It is also preferable that a hexagonal-prismatic stabilizing matrix is provided at the center of the wire and the plurality of filaments covered with the stabilizer matrix are arranged on each side surface thereof in a layered manner. A flat stranded wire having low ac loss can be formed by such wires.
    • 提供了一种具有圆形或基本上圆形截面形状并具有与带状线相当的临界电流密度的氧化物超导线。 氧化物超导线由沿着丝条的纵向方向延伸的多根细丝和带状的覆盖长丝的稳定剂基体组成。 每个灯丝的宽度与厚度的纵横比为4〜40,每根灯丝的厚度为5〜50μm。 线的一部分为圆形或大致圆形。 该线在77K的温度下表现出至少2000A / cm 2的临界电流密度,而不施加磁场。 优选地,所述多根细丝相对于所述线的中心基本上旋转对称地排列。 另外,优选的是,六边形棱柱形稳定基体设置在线的中心,并且以其分层的方式在其每个侧表面上布置有被稳定剂基体覆盖的多根细丝。 通过这样的导线可以形成具有低交流损耗的扁平绞线。
    • 9. 发明授权
    • Deposition methods and stacked film formed thereby
    • 沉积方法和层叠膜由此形成
    • US07544273B2
    • 2009-06-09
    • US10467337
    • 2001-12-10
    • Takahiro TanedaKoso FujinoKazuya Ohmatsu
    • Takahiro TanedaKoso FujinoKazuya Ohmatsu
    • C23C14/00
    • C23C14/225C23C14/28C30B23/02C30B29/16C30B29/22C30B29/225H01L39/2461Y10T428/12493
    • A method of making a film having a uniform thickness and having a crystal axis parallel to a main surface of a substrate is described. In a deposition method, a film is formed by scattering a deposition material from a target (12) surface and growing the scattered deposition material on a main surface (100a) of a substrate (100). The method includes the steps of positioning the substrate (100) into a first state where the distance between one end (100f) and the target (12) is small and the distance between the other end (100e) and the target material (12) is relatively large, forming a first film (110) on the substrate (100) in the first state, positioning the substrate (100) into a second state where the distance between one end (100f) and the target (12) is large and the distance between the other end (100e) and the target (12) is small, and. forming a second film (120) on the first film (110) in the second state.
    • 描述了制造具有均匀厚度并且具有平行于基板的主表面的晶轴的膜的方法。 在沉积方法中,通过从靶(12)表面散射沉积材料并将散射的沉积材料生长在基底(100)的主表面(100a)上而形成膜。 该方法包括以下步骤:将基板(100)定位成第一状态,其中一端(100f)和目标(12)之间的距离小,另一端(100e)和目标材料(12)之间的距离 相对较大,在第一状态下在基板(100)上形成第一膜(110),将基板(100)定位成一端(100f)和目标(12)之间的距离较大的第二状态,以及 另一端(100e)与靶(12)之间的距离小, 在第二状态下在第一膜(110)上形成第二膜(120)。