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1. 发明授权

US08472489B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08472489B2
公开(公告)日：2013-06-25
申请号：US12678953
申请日：2008-09-18
申请人： Kazumi Wada , Shiyun Lin , Yosuke Kobayashi , Peng Huei Lim
发明人： Kazumi Wada , Shiyun Lin , Yosuke Kobayashi , Peng Huei Lim
IPC分类号： H01S5/00 , H01S3/08 , H01S3/083
CPC分类号： H01S5/1071 , H01S5/021 , H01S5/1032 , H01S5/1075 , H01S5/12 , H01S5/3224
摘要： A light-emitting device having a ring optical resonator and capable of laser oscillation by a novel structure realized by working out the mechanism of light emission. The light-emitting device having a ring optical resonator fabricated on a base is characterized in that the optical resonator has a core made of a semiconductor and serving to propagate light and a clad formed on at least the base side of the core in the stack direction out of the base side and the opposite side of the core, at least the ring inner and outer peripheral surfaces of the core are covered with a transparent body having an index of refraction lower than that of the space or the clad, and a part of the ring inner and outer peripheral surfaces of the clad are covered with a transparent body having an index of refraction lower than that of the space or the clad.
摘要翻译：一种具有环形光学谐振器并且能够通过实现发光机制而实现的新颖结构的激光振荡的发光器件。具有在基底上制造的环形光学谐振器的发光器件的特征在于，光谐振器具有由半导体制成的并且用于传播光的芯和在堆叠方向上至少形成在芯的基极侧的包层在芯的基部侧和相对侧之外，至少芯的环内周表面和外周表面被折射率低于空间或包层的透明体覆盖，并且部分包层的环内外表面被折射率低于空间或包层的折射率的透明体覆盖。

2. 发明申请

US20110044362A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110044362A1
公开(公告)日：2011-02-24
申请号：US12678953
申请日：2008-09-18
申请人： Kazumi Wada , Shiyun Lin , Yosuke Kobayashi , Peng Huei Lim
发明人： Kazumi Wada , Shiyun Lin , Yosuke Kobayashi , Peng Huei Lim
IPC分类号： H01S5/10
CPC分类号： H01S5/1071 , H01S5/021 , H01S5/1032 , H01S5/1075 , H01S5/12 , H01S5/3224
摘要： A light-emitting device having a ring optical resonator and capable of laser oscillation by a novel structure realized by working out the mechanism of light emission. The light-emitting device having a ring optical resonator fabricated on a base is characterized in that the optical resonator has a core made of a semiconductor and serving to propagate light and a clad formed on at least the base side of the core in the stack direction out of the base side and the opposite side of the core, at least the ring inner and outer peripheral surfaces of the core are covered with a transparent body having an index of refraction lower than that of the space or the clad, and a part of the ring inner and outer peripheral surfaces of the clad are covered with a transparent body having an index of refraction lower than that of the space or the clad.
摘要翻译：一种具有环形光学谐振器并且能够通过实现发光机制而实现的新颖结构的激光振荡的发光器件。具有在基底上制造的环形光学谐振器的发光器件的特征在于，光谐振器具有由半导体制成的并且用于传播光的芯和在堆叠方向上至少形成在芯的基极侧的包层在芯的基部侧和相对侧之外，至少芯的环内周表面和外周表面被折射率低于空间或包层的透明体覆盖，并且部分包层的环内外表面被折射率低于空间或包层的折射率的透明体覆盖。

3. 发明申请

US20110006399A1 SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD 审中-公开
标题翻译：半导体波导和半导体波形制造方法
公开(公告)号：US20110006399A1
公开(公告)日：2011-01-13
申请号：US12810989
申请日：2008-12-26
申请人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
发明人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L21/02516 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L29/267 , H01L29/7371
摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising a single-crystal Si wafer; an insulating layer that has an open region and that is formed on the wafer; a Ge layer that is epitaxially grown on the wafer in the open region; and a GaAs layer that is epitaxially grown on the Ge layer, wherein the Ge layer is formed by (i) placing the wafer in a CVD reaction chamber that can create an ultra-high vacuum low-pressure state, (ii) performing a first epitaxial growth at a first temperature at which raw material gas can thermally decompose, (iii) performing a second epitaxial growth at a second temperature that is higher than the first temperature, (iv) performing a first annealing, at a third temperature that is loss than a melting point of Ge, on epitaxial layers formed by the first and second epitaxial growths, and (v) performing a second annealing at a fourth temperature that is lower than the third temperature. The Ge layer may he formed by repeating the first annealing and the second annealing a plurality of times, and the insulating layer may be a silicon oxide layer.
摘要翻译：实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。提供了包括单晶Si晶片的半导体晶片; 绝缘层，其具有开放区域并形成在所述晶片上; 在开放区域中在晶片上外延生长的Ge层; 以及在所述Ge层上外延生长的GaAs层，其中，所述Ge层通过以下方式形成：（i）将所述晶片放置在可产生超高真空低压状态的CVD反应室中，（ii）在原料气体可以热分解的第一温度下外延生长，（iii）在高于第一温度的第二温度下进行第二外延生长，（iv）在损失的第三温度下进行第一退火比在第一和第二外延生长形成的外延层上的熔点高的Ge，和（v）在低于第三温度的第四温度下进行第二次退火。可以通过重复第一退火和第二退火多次形成Ge层，并且绝缘层可以是氧化硅层。

4. 发明授权

US07787176B2 On-chip optical amplifier 有权
标题翻译：片上光放大器
公开(公告)号：US07787176B2
公开(公告)日：2010-08-31
申请号：US10234785
申请日：2002-09-04
申请人： Lionel C. Kimerling , Kazumi Wada , Daniel K. Sparacin , Desmond R. Lim
发明人： Lionel C. Kimerling , Kazumi Wada , Daniel K. Sparacin , Desmond R. Lim
IPC分类号： H01S5/00 , H04B10/12
CPC分类号： H01S5/50 , H01S5/026 , H01S5/10 , H01S5/101 , H01S5/1032 , H01S5/1046 , H01S5/30
摘要： An on-chip amplifier includes first element that curtails the velocity of an incoming light to the amplifier. A second element is doped so as to make the frequency of the incoming light equal to the electron frequency in order to allow for electron-photon wave interaction, so that when current flows through the amplifier, electron power is transferred to the incoming light, resulting in amplification of the incoming light.
摘要翻译：片上放大器包括第一元件，其将入射光的速度限制到放大器。掺杂第二元素以使入射光的频率等于电子频率，以便允许电子 - 光子波相互作用，使得当电流流过放大器时，电子功率被转移到入射光，导致放大入射光。

5. 发明授权

US06944368B2 Waveguide-to-semiconductor device coupler 有权
标题翻译：波导到半导体器件耦合器
公开(公告)号：US06944368B2
公开(公告)日：2005-09-13
申请号：US10733977
申请日：2003-12-11
申请人： Lionel C. Kimerling , Kazumi Wada , Shoji Akiyama
发明人： Lionel C. Kimerling , Kazumi Wada , Shoji Akiyama
IPC分类号： G02B6/12 , G02B6/28 , G02B6/42 , G02B6/26
CPC分类号： G02B6/2813 , G02B6/12002 , G02B6/12004 , G02B6/42 , G02B2006/12159 , G02B2006/12195
摘要： A waveguide-semiconductor coupling device includes a waveguide structure that includes a multimode interferometer (MMI) structure so as to minimize the reflections of TE modes in the coupling device. A mesa structure is coupled to the waveguide structure so as to minimize the reflections of TM modes in the coupling device.
摘要翻译：波导 - 半导体耦合器件包括包括多模干涉仪（MMI）结构的波导结构，以便使耦合器件中TE模的反射最小化。台面结构耦合到波导结构，以便使耦合装置中TM模的反射最小化。

6. 发明授权

US06859321B2 Low voltage tunable photonic crystal with large defects as wavelength routing 有权
标题翻译：具有较大缺陷的低电压可调光子晶体作为波长路由
公开(公告)号：US06859321B2
公开(公告)日：2005-02-22
申请号：US10402504
申请日：2003-03-28
申请人： Lionel C. Kimerling , Kazumi Wada , Yasha Yi
发明人： Lionel C. Kimerling , Kazumi Wada , Yasha Yi
IPC分类号： G02B6/122 , G02B6/34 , G02B26/00 , H01S5/183 , G02B27/00
CPC分类号： B82Y20/00 , G02B6/1225 , G02B26/001
摘要： A photonic bandgap device includes a first mirror region including alternating layers of different materials. A second mirror region includes alternating layers of different materials. An air gap cavity region is positioned between the first mirror region and second region. The air gap cavity changes its thickness when a voltage is applied so that the device is tuned to a particular resonant wavelength.
摘要翻译：光子带隙装置包括包括不同材料的交替层的第一反射镜区域。第二镜面区域包括不同材料的交替层。气隙腔区域位于第一反射镜区域和第二区域之间。当施加电压时，气隙腔改变其厚度，使得器件被调谐到特定的谐振波长。

7. 发明授权

US06850683B2 Low-loss waveguide and method of making same 有权
标题翻译：低损耗波导及其制造方法
公开(公告)号：US06850683B2
公开(公告)日：2005-02-01
申请号：US09876392
申请日：2001-06-07
申请人： Kevin K. Lee , Desmond R. Lim , Kazumi Wada , Lionel C. Kimerling
发明人： Kevin K. Lee , Desmond R. Lim , Kazumi Wada , Lionel C. Kimerling
IPC分类号： G02B6/12 , G02B6/122 , G02B6/13 , G02B6/132 , G02B6/10
CPC分类号： G02B6/122 , G02B6/13 , G02B6/132 , G02B2006/12176
摘要： A method of reducing the scattering losses that involves smoothing of the core/cladding interface and/or change of waveguide geometry in high refractive index difference waveguides. As an example, the SOI-based Si/SiO2 waveguides are subjected to an oxidation reaction at high temperatures, after the waveguide patterning process. By oxidizing the rough silicon core surfaces after the patterning process, the core/cladding interfaces are smoothened, reducing the roughness scattering in waveguides.
摘要翻译：降低散射损耗的方法，其涉及在高折射率差分波导中平滑芯/包层界面和/或波导几何形状的变化。作为示例，在波导图案化工艺之后，SOI基Si / SiO 2波导在高温下经受氧化反应。通过在图案化处理之后氧化粗糙的硅芯表面，使芯/包层界面平滑化，减少波导中的粗糙度散射。

8. 发明授权

US06805276B2 Deposit metal welding method 失效
标题翻译：沉积金属焊接方法
公开(公告)号：US06805276B2
公开(公告)日：2004-10-19
申请号：US10143558
申请日：2002-05-10
申请人： Kazumi Wada
发明人： Kazumi Wada
IPC分类号： B23K3102
CPC分类号： E01B29/42 , B23K23/00 , Y10T428/12493
摘要： To prevent decreases in fatigue strength of a base material by relieving the residual stress of a weld. A method for welding a deposit metal to a base material with reduced residual stress, comprising a step of welding a deposit metal to a base material; and a step of plastically deforming into a recess, an area on the surface of the base material around a peripheral portion of the deposit metal. The invention is also directed to a welded block joint between a wire and a base material, characterized by comprising a deposit metal receiving an end portion of the wire and welded to the base material, wherein an area which is plastically deformed into a recess is formed on the base material surface at a peripheral portion of the deposit metal.
摘要翻译：通过减轻焊接的残余应力来防止基材的疲劳强度降低。一种用于将沉积金属焊接到具有降低的残余应力的基底材料的方法，包括将沉积金属焊接到基底材料的步骤; 以及将金属表面周围的基材表面的区域塑性变形为凹陷的步骤。本发明还涉及一种电线和基材之间的焊接块接头，其特征在于，包括一个沉积金属，其接收该电线的端部并焊接到该基底材料上，其中形成塑性变形成凹槽的区域在沉积金属的周边部分的基材表面上。

9. 发明授权

US06750393B2 Back reflector of solar cells 失效
标题翻译：太阳能电池背反射器
公开(公告)号：US06750393B2
公开(公告)日：2004-06-15
申请号：US10177040
申请日：2002-06-21
申请人： Kazumi Wada , Lionel C. Kimerling , Noriaki Toyoda
发明人： Kazumi Wada , Lionel C. Kimerling , Noriaki Toyoda
IPC分类号： H01L31052
CPC分类号： B82Y20/00 , G02B6/1225 , H01L31/02363 , H01L31/0547 , H01L31/056 , Y02E10/52
摘要： A solar cell that has a photoactive region; a Lambertian surface on the topside of the photoactive region; and a photonic crystal on the backside of the photoactive region.
摘要翻译：具有光活性区域的太阳能电池; 在光活性区域的上侧的朗伯表面; 和光活性区的背面的光子晶体。

10. 发明申请

US20110030779A1 SILICON SOLAR CELL 审中-公开
标题翻译：硅太阳能电池
公开(公告)号：US20110030779A1
公开(公告)日：2011-02-10
申请号：US12866185
申请日：2009-02-03
申请人： Kazumi Wada , Ryuzo Ichikawa
发明人： Kazumi Wada , Ryuzo Ichikawa
IPC分类号： H01L31/0216
CPC分类号： H01L31/1804 , H01L31/028 , H01L31/0547 , H01L31/068 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A silicon solar cell includes a silicon substrate (10) having a p-n junction structure fabricated by forming an n-type silicon substrate an a p-type silicon substrate by n-type impurity diffusion. The silicon substrate (10) contains multiple diffusing bodies (12) diffusing incident light (11) in all directions as shown by arrows (11a to 11g). Since the diffuse light beams travel along the light-receiving surface (10a) at long distances, the lengths that the light beams travel are long accordingly, and the light absorption is enhanced. Even holes (pipe-like holes) formed in the light-receiving surface (10a) of the silicon substrate (10) formed after the anodization step enhance the light internal persistence rate higher than that of conventional silicon substrates like silicon substrates (10) containing air balls (12). The silicon substrate exhibiting a light internal persistence rate approximate to those of silicon substrates containing air balls can be fabricated by a simpler manufacturing method without any annealing step.
摘要翻译：硅太阳能电池包括通过n型杂质扩散形成p型硅衬底而形成n型硅衬底而形成p-n结结构的硅衬底（10）。硅衬底（10）如箭头（11a至11g）所示，包含沿着所有方向扩散入射光（11）的多个漫射体（12）。由于漫射光束长距离地沿着受光面（10a）行进，所以光束行进的长度相应地长，并且光吸收增强。形成在阳极氧化步骤之后形成的硅衬底（10）的光接收表面（10a）中的均匀孔（管状孔）比常规硅衬底（例如硅衬底（10））的光内部持续速率高，空气球（12）。表现出与内含空气球的硅基板接近的光内部持续率的硅基板可以通过简单的制造方法制造而无需任何退火步骤。

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