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1. 发明申请

US20110030779A1 SILICON SOLAR CELL 审中-公开
标题翻译：硅太阳能电池
公开(公告)号：US20110030779A1
公开(公告)日：2011-02-10
申请号：US12866185
申请日：2009-02-03
申请人： Kazumi Wada , Ryuzo Ichikawa
发明人： Kazumi Wada , Ryuzo Ichikawa
IPC分类号： H01L31/0216
CPC分类号： H01L31/1804 , H01L31/028 , H01L31/0547 , H01L31/068 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A silicon solar cell includes a silicon substrate (10) having a p-n junction structure fabricated by forming an n-type silicon substrate an a p-type silicon substrate by n-type impurity diffusion. The silicon substrate (10) contains multiple diffusing bodies (12) diffusing incident light (11) in all directions as shown by arrows (11a to 11g). Since the diffuse light beams travel along the light-receiving surface (10a) at long distances, the lengths that the light beams travel are long accordingly, and the light absorption is enhanced. Even holes (pipe-like holes) formed in the light-receiving surface (10a) of the silicon substrate (10) formed after the anodization step enhance the light internal persistence rate higher than that of conventional silicon substrates like silicon substrates (10) containing air balls (12). The silicon substrate exhibiting a light internal persistence rate approximate to those of silicon substrates containing air balls can be fabricated by a simpler manufacturing method without any annealing step.
摘要翻译：硅太阳能电池包括通过n型杂质扩散形成p型硅衬底而形成n型硅衬底而形成p-n结结构的硅衬底（10）。硅衬底（10）如箭头（11a至11g）所示，包含沿着所有方向扩散入射光（11）的多个漫射体（12）。由于漫射光束长距离地沿着受光面（10a）行进，所以光束行进的长度相应地长，并且光吸收增强。形成在阳极氧化步骤之后形成的硅衬底（10）的光接收表面（10a）中的均匀孔（管状孔）比常规硅衬底（例如硅衬底（10））的光内部持续速率高，空气球（12）。表现出与内含空气球的硅基板接近的光内部持续率的硅基板可以通过简单的制造方法制造而无需任何退火步骤。

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