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1. 发明申请

US20140264030A1 METHODS AND APPARATUS FOR MID-INFRARED SENSING 有权
标题翻译：中红外传感器的方法和装置
公开(公告)号：US20140264030A1
公开(公告)日：2014-09-18
申请号：US14076655
申请日：2013-11-11
申请人： PAO TAI LIN , YAN CAI , ANURADHA MURTHY AGARWAL , LIONEL C. KIMERLING
发明人： PAO TAI LIN , YAN CAI , ANURADHA MURTHY AGARWAL , LIONEL C. KIMERLING
IPC分类号： G01N21/59 , G02B6/136
CPC分类号： G02B6/136 , G01N21/35 , G02B6/122
摘要： A chip-scale, air-clad semiconductor pedestal waveguide can be used as a mid-infrared (mid-IR) sensor capable of in situ monitoring of organic solvents and other analytes. The sensor uses evanescent coupling from a silicon or germanium waveguide, which is highly transparent in the mid-IR portion of the electromagnetic spectrum (e.g., between λ=1.3 μm and λ=6.5 μm for silicon and λ=1.3 μm and λ=12.0 μm for germanium), to probe the absorption spectrum of the fluid surrounding the waveguide. Launching a mid-IR beam into the waveguide exposed to a particular analyte causes attenuation of the evanescent wave's spectral components due to absorption by carbon, oxygen, hydrogen, and/or nitrogen bonds in the surrounding fluid. Detecting these changes at the waveguide's output provides an indication of the type and concentration of one or more compounds in the surrounding fluid. If desired, the sensor may be integrated onto a silicon substrate with a mid-IR light source and a mid-IR detector to form a chip-based spectrometer.
摘要翻译：芯片尺寸的空气包层半导体基座波导可用作能够原位监测有机溶剂和其他分析物的中红外（中红外）传感器。传感器使用来自硅或锗波导的衰减耦合，其在电磁光谱的中红外部分中是高度透明的（例如，对于硅，λ=1.3μm和λ=6.5μm，λ=1.3μm和λ= 12.0 用于锗），以探测波导周围的流体的吸收光谱。将中红外光束发射到暴露于特定分析物的波导中，由于周围流体中的碳，氧，氢和/或氮键的吸收而导致衰减波的光谱分量的衰减。在波导的输出处检测这些变化提供了周围流体中一种或多种化合物的类型和浓度的指示。如果需要，传感器可以用中红外光源和中红外检测器集成到硅衬底上，以形成基于芯片的光谱仪。

2. 发明申请

US20130039618A1 PATTERNED NON-RECIPROCAL OPTICAL RESONATOR 有权
标题翻译：图形非共振光学谐振器
公开(公告)号：US20130039618A1
公开(公告)日：2013-02-14
申请号：US13208002
申请日：2011-08-11
申请人： Lionel C. Kimerling , Caroline A. Ross , Lei Bi , Peng Jiang , Juejun Hu , Dong Hun Kim , Gerald F. Dionne
发明人： Lionel C. Kimerling , Caroline A. Ross , Lei Bi , Peng Jiang , Juejun Hu , Dong Hun Kim , Gerald F. Dionne
IPC分类号： G02B6/42 , B05D5/12
CPC分类号： G02F1/0955 , G02B6/12004 , G02B6/12007 , G02F1/095 , G02F1/3132 , G02F1/361 , G02F1/3611 , G02F2203/15 , H01F41/14
摘要： A patterned nonreciprocal optical resonator structure is provided that includes a resonator structure that receives an optical signal. A top cladding layer is deposited on a selective portion of the resonator structure. The top cladding layer is patterned so as to expose the core of the resonator structure defined by the selective portion. A magneto-optically active layer includes a magneto-optical medium being deposited on the exposed core of the resonator structure so as to generate optical non-reciprocity.
摘要翻译：提供了一种图案化的非可逆光学谐振器结构，其包括接收光信号的谐振器结构。上覆层沉积在谐振器结构的选择部分上。图案化顶部覆层以便露出由选择部分限定的谐振器结构的芯。磁光学层包括沉积在谐振器结构的暴露的磁芯上的磁光介质，以产生光学非互易性。

3. 发明申请

US20110316018A1 ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES 有权
标题翻译：在激光和发光器件中的工程辐射波长
公开(公告)号：US20110316018A1
公开(公告)日：2011-12-29
申请号：US12821643
申请日：2010-06-23
申请人： Lionel C. Kimerling , Jifeng Liu , Jurgen Michel
发明人： Lionel C. Kimerling , Jifeng Liu , Jurgen Michel
IPC分类号： H01L33/02 , H01L33/00
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01S5/3403 , H01S5/34333
摘要： A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.
摘要翻译：提供一种发光器件，其包括至少一个第一半导体材料层和至少一个第二半导体材料层。至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。

4. 发明授权

US07831123B2 Microphotonic waveguide including core/cladding interface layer 有权
标题翻译：微波导管包括芯/包层界面层
公开(公告)号：US07831123B2
公开(公告)日：2010-11-09
申请号：US11899234
申请日：2007-09-05
申请人： Daniel K. Sparacin , Anuradha M. Agarwal , Pradip K. Roy , Lionel C. Kimerling
发明人： Daniel K. Sparacin , Anuradha M. Agarwal , Pradip K. Roy , Lionel C. Kimerling
IPC分类号： G02B6/10
CPC分类号： G02B6/132 , G02B6/122 , G02B6/1223 , G02B2006/12097 , G02B2006/121 , G02B2006/12169 , G02B2006/12176
摘要： The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.
摘要翻译：本发明提供一种具有波导芯的波导，波导芯具有纵向侧壁表面，纵向顶表面和设置在基底上的纵向底表面。界面层设置在波导芯的至少一个纵向侧壁表面上。至少在波导芯侧壁和顶表面上，在界面层上设置波导覆层。本发明的波导可以通过在基板上形成波导管下封层，然后在下封层上形成波导芯来制造。然后在波导芯的至少纵向侧壁表面上形成界面层，并且在该界面层上的纵向顶表面和波导芯的纵向侧壁表面上形成上覆层。

5. 发明授权

US07787176B2 On-chip optical amplifier 有权
标题翻译：片上光放大器
公开(公告)号：US07787176B2
公开(公告)日：2010-08-31
申请号：US10234785
申请日：2002-09-04
申请人： Lionel C. Kimerling , Kazumi Wada , Daniel K. Sparacin , Desmond R. Lim
发明人： Lionel C. Kimerling , Kazumi Wada , Daniel K. Sparacin , Desmond R. Lim
IPC分类号： H01S5/00 , H04B10/12
CPC分类号： H01S5/50 , H01S5/026 , H01S5/10 , H01S5/101 , H01S5/1032 , H01S5/1046 , H01S5/30
摘要： An on-chip amplifier includes first element that curtails the velocity of an incoming light to the amplifier. A second element is doped so as to make the frequency of the incoming light equal to the electron frequency in order to allow for electron-photon wave interaction, so that when current flows through the amplifier, electron power is transferred to the incoming light, resulting in amplification of the incoming light.
摘要翻译：片上放大器包括第一元件，其将入射光的速度限制到放大器。掺杂第二元素以使入射光的频率等于电子频率，以便允许电子 - 光子波相互作用，使得当电流流过放大器时，电子功率被转移到入射光，导致放大入射光。

6. 发明授权

US07738756B2 Energy coupled superlattice structures for silicon based lasers and modulators 有权
标题翻译：用于硅基激光器和调制器的能量耦合超晶格结构
公开(公告)号：US07738756B2
公开(公告)日：2010-06-15
申请号：US11490961
申请日：2006-07-21
申请人： Luca Dal Negro , Jae Hyung Yi , Lionel C. Kimerling
发明人： Luca Dal Negro , Jae Hyung Yi , Lionel C. Kimerling
IPC分类号： G02B6/10
CPC分类号： H01S3/0632 , G02B6/12004 , H01S3/0637 , H01S3/1603 , H01S3/1608 , H01S3/1628 , H01S3/17
摘要： A waveguide structure includes a SOI substrate. A core structure is formed on the SOI substrate comprising a plurality of multilayers having alternating or aperiodically distributed thin layers of either Si-rich oxide (SRO), Si-rich nitride (SRN) or Si-rich oxynitride (SRON). The multilayers are doped with a rare earth material so as to extend the emission range of the waveguide structure to the near infrared region. A low index cladding includes conductive oxides to act as electrodes.
摘要翻译：波导结构包括SOI衬底。在包括多个具有富Si氧化物（SRO），富Si的氮化物（SRN）或富Si氧氮化物（SRON）的交替或非周期分布的薄层的多层的SOI衬底上形成芯结构。多层掺杂有稀土材料，以将波导结构的发射范围扩展到近红外区域。低折射率包层包括用作电极的导电氧化物。

7. 发明授权

US07659627B2 Photodiode 有权
标题翻译：光电二极管
公开(公告)号：US07659627B2
公开(公告)日：2010-02-09
申请号：US11950795
申请日：2007-12-05
申请人： Yukiya Miyachi , Wojciech P. Giziewicz , Jurgen Michel , Lionel C. Kimerling
发明人： Yukiya Miyachi , Wojciech P. Giziewicz , Jurgen Michel , Lionel C. Kimerling
IPC分类号： H01L29/41
CPC分类号： H01L27/1446 , H01L31/022408 , H01L31/085
摘要： A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.
摘要翻译：光敏二极管平衡灵敏度和速度提高。光电二极管包括半导体衬底，形成在半导体衬底上的有源区和连接到有源区的梳状电极。梳状电极包括多个电极指，并且每个电极指包括与活性区接触的透明电极和形成在透明电极上的不透明电极。这里，不透明电极的宽度被设定为小于透明电极的宽度。

8. 发明授权

US07565046B2 Mode transformers for low index high confinement waveguides 有权
标题翻译：用于低折射率高限制波导的模式变压器
公开(公告)号：US07565046B2
公开(公告)日：2009-07-21
申请号：US11954461
申请日：2007-12-12
申请人： Ning-Ning Feng , Rong Sun , Lionel C. Kimerling , Jurgen Michel
发明人： Ning-Ning Feng , Rong Sun , Lionel C. Kimerling , Jurgen Michel
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G02B6/1223 , B82Y20/00 , G02B6/1225 , G02B6/1228 , G02B6/305 , G02B2006/12097 , G02B2006/12195
摘要： The mode transforming structure includes a first waveguide structure. A slot waveguide region is coupled to the first waveguide structure. The slot waveguide region includes one or more complementary tapered pairs so near lossless transforming between the first waveguide structure and the slot waveguide region occurs so as to allow optical modes to be transferred between the first waveguide and the slot waveguide region.
摘要翻译：模式转换结构包括第一波导结构。缝隙波导区域耦合到第一波导结构。缝隙波导区域包括一个或多个互补锥形对，使得在第一波导结构和缝隙波导区域之间进行接近无损变换，从而允许在第一波导和缝隙波导区域之间传输光学模式。

9. 发明申请

US20090093074A1 Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches 审中-公开
标题翻译：通过顺序热退火方法从硅基纳米晶体的光发射
公开(公告)号：US20090093074A1
公开(公告)日：2009-04-09
申请号：US12137224
申请日：2008-06-11
申请人： Jae Hyung Yi , Luca Dal Negro , Lionel C. Kimerling
发明人： Jae Hyung Yi , Luca Dal Negro , Lionel C. Kimerling
IPC分类号： H01L21/28
CPC分类号： H05B33/10 , B82Y30/00 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. A first annealing step is performed at a first temperature in a processing chamber or annealing furnace; and, thereafter, a second annealing step is performed at a second temperature in the processing chamber or annealing furnace. The second temperature is greater than the first temperature, and the photoluminescence of the film after the second annealing step is greater than the photoluminescence of the film without the first annealing step.
摘要翻译：一种用于增强光致发光的方法包括提供设置在衬底上的膜，所述膜包括半导体和电介质材料中的至少一种。当使用SiO 2和SiN x或富Si氧化物的薄膜层时，可以通过生长后处理热退火来激发发光。在处理室或退火炉中的第一温度下进行第一退火步骤; 之后，在处理室或退火炉中，在第二温度下进行第二退火工序。第二温度大于第一温度，第二退火步骤后的膜的光致发光比没有第一退火步骤的膜的光致发光大。

10. 发明授权

US07480430B2 Partial confinement photonic crystal waveguides 有权
标题翻译：局部约束光子晶体波导
公开(公告)号：US07480430B2
公开(公告)日：2009-01-20
申请号：US11349761
申请日：2006-02-08
申请人： Sajan Saini , Jurgen Michel , Dong Pan , Wojciech Giziewicz , Lionel C. Kimerling
发明人： Sajan Saini , Jurgen Michel , Dong Pan , Wojciech Giziewicz , Lionel C. Kimerling
IPC分类号： G02B6/26
CPC分类号： H01L29/768
摘要： An optical waveguide structure includes an air-via region that receives an optical signal from an optical source. A photonic crystal cladding region is formed on the surface of the air-via region. The photonic crystal cladding region confines the optical signal within the air-via region and propagates the optical signal along the axial direction while ensuring near complete transmission of the optical signal.
摘要翻译：光波导结构包括从光源接收光信号的通气区域。在透气区域的表面上形成光子晶体包层区域。光子晶体覆盖区域将光信号限制在通气区域内，并且沿着轴向传播光信号，同时确保光信号的接近完全传输。

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