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1. 发明授权

US07220461B2 Method and apparatus for forming silicon oxide film 有权
标题翻译：用于形成氧化硅膜的方法和装置
公开(公告)号：US07220461B2
公开(公告)日：2007-05-22
申请号：US10961025
申请日：2004-10-12
申请人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
发明人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
IPC分类号： H05H1/24
CPC分类号： C23C16/56 , C23C16/045 , C23C16/401 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02337 , H01L21/3105
摘要： A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.
摘要翻译：形成氧化硅膜的方法包括在目标衬底的表面上设置氧化硅膜，并对氧化硅膜进行重整工序。通过使氧化硅膜退火，同时将氧化硅膜暴露于氧自由基和羟基自由基来进行重整过程。

2. 发明申请

US20050196533A1 Method and apparatus for forming silicon oxide film 有权
标题翻译：用于形成氧化硅膜的方法和装置
公开(公告)号：US20050196533A1
公开(公告)日：2005-09-08
申请号：US10961025
申请日：2004-10-12
申请人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
发明人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
IPC分类号： C23C16/40 , B05D3/02 , C23C16/00 , C23C16/52 , H01L21/205 , H01L21/316
CPC分类号： C23C16/56 , C23C16/045 , C23C16/401 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02337 , H01L21/3105
摘要： A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.
摘要翻译：形成氧化硅膜的方法包括在目标衬底的表面上设置氧化硅膜，并对氧化硅膜进行重整工序。通过使氧化硅膜退火，同时将氧化硅膜暴露于氧自由基和羟基自由基来进行重整过程。

3. 发明授权

US07125811B2 Oxidation method for semiconductor process 失效
标题翻译：半导体工艺的氧化方法
公开(公告)号：US07125811B2
公开(公告)日：2006-10-24
申请号：US10924853
申请日：2004-08-25
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kazuhide Hasebe
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kazuhide Hasebe
IPC分类号： H01L21/31
CPC分类号： C23C8/16 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.
摘要翻译：用于对目标基板的表面进行氧化的半导体工艺的氧化方法包括加热容纳目标基板的处理容器，并且在排出处理容器的同时将氢气和氧气供给到处理容器中。氧化方法还包括使氢气和氧气在处理容器中在处理温度和工艺压力下彼此反应以产生水蒸汽，并通过水蒸汽氧化目标基底的表面。工艺压力设定为2000Pa（15Torr）以上。

4. 发明申请

US20050095826A1 Heat-processing method and apparatus for semiconductor process 失效
标题翻译：半导体工艺的加热方法和装置
公开(公告)号：US20050095826A1
公开(公告)日：2005-05-05
申请号：US10924959
申请日：2004-08-25
申请人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
发明人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/324 , C23C16/44 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/24
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译：目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

5. 发明授权

US07211514B2 Heat-processing method for semiconductor process under a vacuum pressure 失效
标题翻译：在真空压力下半导体工艺的热处理方法
公开(公告)号：US07211514B2
公开(公告)日：2007-05-01
申请号：US10924959
申请日：2004-08-25
申请人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
发明人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/44
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译：目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

6. 发明申请

US20110129619A1 FILM FORMATION METHOD AND APPARATUS 有权
标题翻译：胶片形成方法和装置
公开(公告)号：US20110129619A1
公开(公告)日：2011-06-02
申请号：US12954778
申请日：2010-11-26
申请人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
IPC分类号： C23C16/34 , H05H1/24 , C23C16/52
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4404 , C23C16/45542 , C23C16/45546 , C23C16/52 , H01L21/0217 , H01L21/0228
摘要： A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.
摘要翻译：成膜方法包括将目标物体设定在150〜550℃的温度，将被处理物体配置在保持真空状态的处理容器的内部，然后交替地重复包含第一供给工序和第二供给步骤多次以在目标物体上形成氮化硅膜。第一供给步骤是将处理容器中的一氯硅烷气体作为Si源供给到处理容器中，同时使处理容器的压力为66.65〜666.5Pa。第二供给步骤是将作为氮化气体的含氮气体供给到处理容器中的步骤。

7. 发明申请

US20050079699A1 Oxidation method for semiconductor process 失效
标题翻译：半导体工艺的氧化方法
公开(公告)号：US20050079699A1
公开(公告)日：2005-04-14
申请号：US10924853
申请日：2004-08-25
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kazuhide Hasebe
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kazuhide Hasebe
IPC分类号： H01L21/31 , H01L21/316 , H01L21/44
CPC分类号： C23C8/16 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.
摘要翻译：用于对目标基板的表面进行氧化的半导体工艺的氧化方法包括加热容纳目标基板的处理容器，并且在排出处理容器的同时将氢气和氧气供给到处理容器中。氧化方法还包括使氢气和氧气在处理容器中在处理温度和工艺压力下彼此反应以产生水蒸汽，并通过水蒸汽氧化目标基底的表面。工艺压力设定为2000Pa（15Torr）以上。

8. 发明授权

US08216648B2 Film formation method and apparatus 有权
标题翻译：成膜方法和装置
公开(公告)号：US08216648B2
公开(公告)日：2012-07-10
申请号：US12954778
申请日：2010-11-26
申请人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
IPC分类号： C23C16/34
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4404 , C23C16/45542 , C23C16/45546 , C23C16/52 , H01L21/0217 , H01L21/0228
摘要： A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.
摘要翻译：成膜方法包括将目标物体设定在150〜550℃的温度，将被处理物体配置在保持真空状态的处理容器的内部，然后交替地重复包含第一供给工序和第二供给步骤多次以在目标物体上形成氮化硅膜。第一供给步骤是将处理容器中的一氯硅烷气体作为Si源供给到处理容器中，同时使处理容器的压力为66.65〜666.5Pa。第二供给步骤是将作为氮化气体的含氮气体供给到处理容器中的步骤。

9. 发明授权

US08431494B2 Film formation method and film formation apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US08431494B2
公开(公告)日：2013-04-30
申请号：US13164280
申请日：2011-06-20
申请人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
发明人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
IPC分类号： H01L21/469 , H01L21/316
CPC分类号： C23C16/401 , C23C16/45523
摘要： A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.
摘要翻译：在处理室中的待处理物体的表面上形成氧化硅膜的成膜方法包括通过将种子气体供给到待处理物体的表面上来吸收包含硅烷类气体的种子气体处理室，通过将作为原料气体的含硅气体和含有该杂质的添加气体供给到处理室中，形成具有杂质的硅膜，氧化硅膜，将硅膜转换成氧化硅膜。因此，在待处理物体的表面上形成具有高密度和高应力的氧化硅膜。

10. 发明授权

US08722510B2 Trench-filling method and film-forming system 有权
标题翻译：沟槽填充法和成膜系统
公开(公告)号：US08722510B2
公开(公告)日：2014-05-13
申请号：US13194426
申请日：2011-07-29
申请人： Masahisa Watanabe , Kazuhide Hasebe
发明人： Masahisa Watanabe , Kazuhide Hasebe
IPC分类号： H01L21/76
CPC分类号： H01L21/67167 , H01L21/02164 , H01L21/02222 , H01L21/02304 , H01L21/02323 , H01L21/32055 , H01L21/32105 , H01L21/67207 , H01L21/76227
摘要： A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide.
摘要翻译：填充沟槽的方法包括加热其中形成有沟槽的半导体衬底和至少形成在沟槽的侧壁上的氧化膜，并将氨基硅烷气体供应到衬底的表面，以在半导体上形成晶种层对其上形成有籽晶层的半导体基板进行加热，并向种子层的表面供给单硅烷气体，以在种子层上形成硅膜，填充形成有硅膜的半导体衬底的沟槽在其上通过燃烧收缩的填充材料，并且在将填充材料变为氧化硅并且改变硅膜的同时，在填充有水和/或羟基的气氛中填充沟槽的填充材料涂覆的半导体衬底燃烧，种子层成为氧化硅。

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